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26 Jun 2006

Volume 88, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 88, 261107 (2006); http://dx.doi.org/10.1063/1.2213912 (3 pages)

Stanley S. Hong, Berthold K. P. Horn, Dennis M. Freeman, and Michael S. Mermelstein
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High-temperature ferromagnetism in Mn-doped ZnO nanowires

U. Philipose, Selvakumar V. Nair, Simon Trudel, C. F. de Souza, S. Aouba, Ross H. Hill, and Harry E. Ruda

Appl. Phys. Lett. 88, 263101 (2006); http://dx.doi.org/10.1063/1.2217707 (3 pages) | Cited 43 times

Online Publication Date: 26 June 2006

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We have observed ferromagnetism in dilute ( ∼ 1–4 at. %) Mn-doped crystalline ZnO nanowires at temperatures up to 400 K. Arrays of freestanding single crystal ZnO:Mn nanowires were fabricated by Au-catalyzed vapor-liquid-solid growth. Structure and compositional analyses revealed that Mn was incorporated into the ZnO lattice. From the observed saturation magnetization, the magnetic moment per Mn atom is estimated to be between 0.3μB and 1.2μB. Photoluminescence measurements show a strong suppression of defect related midgap emission, indicative of an interplay between Mn doping and native point defects.
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75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Tt Fine-particle systems; nanocrystalline materials
78.67.Lt Quantum wires

Room-temperature low-power hydrogen sensor based on a single tin dioxide nanobelt

L. L. Fields, J. P. Zheng, Y. Cheng, and P. Xiong

Appl. Phys. Lett. 88, 263102 (2006); http://dx.doi.org/10.1063/1.2217710 (3 pages) | Cited 28 times

Online Publication Date: 26 June 2006

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Hydrogen sensors have been fabricated from single SnO2 nanobelts synthesized via catalyst-free thermal evaporation. Ohmic contacts were defined on individual SnO2 nanobelts by photolithography and pulsed laser deposition of RuO2. The sensitivity and response time of the sensors, without any catalyst on the surface, to 2% hydrogen at temperatures between 25 and 80 °C were measured. Sensitivity greater than 50%, response time <220 s, and power consumption <10 nW at room temperature were demonstrated.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis

Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography

Alan J. Kubis, Thomas E. Vandervelde, John C. Bean, Derren N. Dunn, and Robert Hull

Appl. Phys. Lett. 88, 263103 (2006); http://dx.doi.org/10.1063/1.2217930 (3 pages) | Cited 4 times

Online Publication Date: 26 June 2006

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Buried layers in quantum dot (QD) superlattices influence the position of QDs in the subsequently grown layers through strain field interactions. Since the strain interactions are complex, a three-dimensional reconstruction of the superlattice can enhance the fundamental understanding of self-organization mechanisms. We have studied the three-dimensional relationship of QDs using focused ion beam tomography. Analysis of the reconstruction is consistent with earlier models for self-organization. QDs on successive layers form above buried QDs. In certain cases, successive QDs in a column decrease in size, resulting in the elimination of the column while QDs in other columns grow in size.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.65.Cd Superlattices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Guided three-dimensional molecular self-assembly on silicon substrates

Chia-Ching Chang, Kien Wen Sun, Lou-Sing Kan, and Chieh-Hsiung Kuan

Appl. Phys. Lett. 88, 263104 (2006); http://dx.doi.org/10.1063/1.2216881 (3 pages)

Online Publication Date: 27 June 2006

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We demonstrate three-dimensional (3D) self-assemble growth of the metallothionein (Mn,Cd-MT-2) molecules on patterned semiconductor substrates. The MT molecules deposited on the patterned substrates were found to grow into 3D rod or ring-type nanostructures, depending on the shape of patterned nanostructures on the substrates. Dense arrays of 3D molecular nanorods or rings with an area density close to 1010 cm−2 were demonstrated with a pore size of 20 nm and a pitch size of 100 nm. Those engineered molecular nanostructures provide an excellent opportunity for biological applications, sensing sources of nanodevices, biochemical reactions on surfaces, and even single molecule studies.
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81.16.Dn Self-assembly
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.43.Gt Powders, porous materials
87.15.-v Biomolecules: structure and physical properties

Diffusion mediated growth of (111) oriented silver nanoparticles in polyvinyl alcohol film under 6 MeV electron irradiation

K. A. Bogle, S. D. Dhole, and V. N. Bhoraskar

Appl. Phys. Lett. 88, 263105 (2006); http://dx.doi.org/10.1063/1.2217712 (3 pages) | Cited 6 times

Online Publication Date: 27 June 2006

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Silver (111) nanoparticles were synthesized by diffusing silver from a solution into polyvinyl alcohol (PVA) films under 6 MeV electron irradiation at room temperature ( ∼ 25 °C). The diffusion of silver in the PVA was confirmed by the Rutherford backscattering spectroscopy and scanning electron microscopy techniques. The plasmon absorption peak at ∼ 426 nm was an evidence for the initiation of the diffusion mediated growth of silver nanoparticles. The x-ray diffraction results and the blueshift in the plasmon absorption peak reveal that the size of silver nanoparticles could be tailored in the range from 35 to 15 nm by varying the electron fluence over the range of 1014–1015 e/cm2.
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81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
66.30.J- Diffusion of impurities
61.82.Pv Polymers, organic compounds
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Water electrolysis activated by Ru nanorod array electrodes

Seongyul Kim, Nikhil Koratkar, Tansel Karabacak, and Toh-Ming Lu

Appl. Phys. Lett. 88, 263106 (2006); http://dx.doi.org/10.1063/1.2218042 (3 pages) | Cited 10 times

Online Publication Date: 27 June 2006

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Efficient hydrogen production is critical to fuel cell operation. One of the most convenient methods to produce hydrogen is via water electrolysis. However, overpotential losses at the cell electrodes results in poor efficiency. In this study we carried out water electrolysis experiments with ruthenium (Ru) nanorod arrays as the cathode. We show up to 25% reduction in overpotential and 20% reduction in energy consumption by use of the Ru nanorod cathode compared to the planar Ru cathode. We attribute the improvement to the increased active area of the nanostructured electrode which reduces the operating current density of the electrolyzer.
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82.45.Hk Electrolysis
82.45.Yz Nanostructured materials in electrochemistry
82.45.Fk Electrodes
82.47.-a Applied electrochemistry
84.60.-h Direct energy conversion and storage

Porous InP array-directed assembly of InAs nanostructure

Xiao-Ling Che, Lu Li, Feng-Qi Liu, Xiu-Qi Huang, and Zhan-Guo Wang

Appl. Phys. Lett. 88, 263107 (2006); http://dx.doi.org/10.1063/1.2218106 (3 pages) | Cited 4 times

Online Publication Date: 27 June 2006

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Fascinating features of porous InP array-directed assembly of InAs nanostructures are presented. Strained InAs nanostructures are grown by molecular-beam epitaxy on electrochemical etched porous InP substrate. Identical porous substrate with different pore depths defines different growth modes. Shallow pores direct the formation of closely spaced InAs dots at the bottom. Deep pores lead to progressive covering of the internal surface of pores by epitaxial material followed by pore mouth shrinking. For any depth an obvious dot depletion feature occurs on top of the pore framework. This growth method presages a pathway to engineer quantum-dot molecules and other nanoelements for fancy physical phenomena.
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81.05.Ea III-V semiconductors
61.46.-w Structure of nanoscale materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.Ta Quantum dots

Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface

E. Bussmann and C. C. Williams

Appl. Phys. Lett. 88, 263108 (2006); http://dx.doi.org/10.1063/1.2209886 (3 pages) | Cited 13 times

Online Publication Date: 28 June 2006

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A tunneling spectroscopy technique to measure the energy level of an electronic state in a completely nonconducting surface is demonstrated. Spectroscopy is performed by electrostatic force detection of single-electron tunneling between a scanning probe and the state as a function of an applied voltage. An electronic state near the surface of a SiO2 film is found 5.5±0.2 eV below the conduction band edge. A random telegraph signal, caused by sporadic back-and-forth single-electron tunneling, is observed as the probe Fermi level passes through the state energy.
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07.79.Cz Scanning tunneling microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
73.40.Gk Tunneling
73.20.At Surface states, band structure, electron density of states
71.20.Ps Other inorganic compounds

Modified atomic force microscope for high-rate dynamic force spectroscopy

A. Ptak, M. Kappl, and H.-J. Butt

Appl. Phys. Lett. 88, 263109 (2006); http://dx.doi.org/10.1063/1.2218273 (3 pages) | Cited 6 times

Online Publication Date: 28 June 2006

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Usually adhesion forces between interfaces increase with the rate of separating the interfaces. One of the most popular instruments for such rate-dependent adhesion experiments (also called dynamic force spectroscopy) is the atomic force microscope (AFM). A limitation of this as well as that of other experimental techniques is the maximum loading rate that can be applied. We extended the range of loading rates of a commercial AFM by up to three orders of magnitude by integration of a small additional piezoactuator with high resonance frequency. Performance of the instrument is demonstrated for a model system of self-assembled monolayers of thiols.
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07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
68.35.Np Adhesion

Ge-dot/Si multilayered structures through Ni-induced lateral crystallization

Bo Yan, Yi Shi, Lin Pu, Jianmin Zhu, Kuangji Zhang, Guobin Ma, Ping Han, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 88, 263110 (2006); http://dx.doi.org/10.1063/1.2218300 (3 pages) | Cited 3 times

Online Publication Date: 28 June 2006

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We demonstrate a method for fabricating high-quality Ge-dot/Si multilayered structures. High-density self-assembled Ge dots are grown on amorphous Si layer periodically by low-pressure chemical vapor deposition, and then the amorphous Si are crystallized through Ni-based metal-induced lateral crystallization. Optical microscopy, micro-Raman spectroscopy, and electron microscopy observations reveal that the crystallized Si film has large leaflike grains elongated along the lateral crystallization direction, which shows (110) preference. Furthermore, this preference is found to deliver to different Si layers. The strain shift of Ge dots deduced from Raman spectroscopy reveals a formation of a high-quality interface between the crystallized Si and Ge dot.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.Ac Multilayers
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.30.Am Elemental semiconductors and insulators
64.70.K- Solid-solid transitions

Precise localization and correlation of single nanoparticle optical responses and morphology

Rongchao Jin, Justin E. Jureller, and Norbert F. Scherer

Appl. Phys. Lett. 88, 263111 (2006); http://dx.doi.org/10.1063/1.2213518 (3 pages) | Cited 16 times

Online Publication Date: 28 June 2006

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We demonstrate nanometer scale localization of the nonlinear optical response of single nanoparticles and aggregates and correlate this with their morphology. The essence of our approach is to create position markers on an optical and electron-transparent substrate (Si3N4 thin film) that allows optical measurements and transmission electron microscopy (TEM) imaging of the identical nanoparticles or aggregates. The second harmonic activity optical image of individual Ag nanostructures is registered with the TEM image. Centroid localization of the optical signals allows correlation with better than 25 nm precision. This is sufficient to determine the origin of optical “hot spots” within multiparticle aggregates.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
68.37.Lp Transmission electron microscopy (TEM)

Directional random lasing in dye-TiO2 doped polymer nanowire array embedded in porous alumina membrane

Hee-Won Shin, Seung Yeon Cho, Kyong-Hoon Choi, Seung-Lim Oh, and Yong-Rok Kim

Appl. Phys. Lett. 88, 263112 (2006); http://dx.doi.org/10.1063/1.2216853 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2006

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We have demonstrated the lasing in the porous alumina membrane filled with hybrid polymer nanowires which consisted of poly(N-vinylcarvazole), rhodamine 6G, and TiO2 nanoparticles. The angle-resolved photoluminescence measurement suggested that lasing had a strong directionality along the hybrid polymer nanowires which were embedded within the nanochannels of the membrane. Although wavelengths of the lasing peaks were not affected by excitation and detection angles, lasing behavior strongly depended on the pore diameters of the membranes utilized. It is suggested that the closed loops for lasing are formed via multiple scattering induced by TiO2 nanoparticles embedded in the hybrid polymer nanowires.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Mv Dye lasers
42.60.By Design of specific laser systems

Nanoresolution profiling of metal-metal interfaces from x-ray Fraunhofer diffraction data

A. V. Darahanau, A. Y. Nikulin, R. A. Dilanian, B. C. Muddle, A. Souvorov, Y. Nishino, and T. Ishikawa

Appl. Phys. Lett. 88, 263113 (2006); http://dx.doi.org/10.1063/1.2217163 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2006

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High-angular-resolution Fraunhofer diffraction data were collected from several samples with interfaces between dissimilar metals using synchrotron x-radiation. The refractive index profile in the vicinity of the interface of each sample was reconstructed with spatial resolution of about 80 nm by the phase retrieval x-ray diffractometry technique, using only limited a priori knowledge of the sample. These studies have demonstrated the viability of the technique as a nondestructive method of characterization of internal interfaces within multiphase materials.
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68.35.Ct Interface structure and roughness
81.70.Ex Nondestructive testing: electromagnetic testing, eddy-current testing
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Coercivity enhancement in the SrRuO3/SrMnO3 superlattices

P. Padhan and W. Prellier

Appl. Phys. Lett. 88, 263114 (2006); http://dx.doi.org/10.1063/1.2217187 (3 pages) | Cited 3 times

Online Publication Date: 29 June 2006

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Magnetic superlattices consisting of ferromagnetic SrRuO3 and antiferromagnetic SrMnO3 have been grown on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique. Zero-field-cooled and field-cooled out-of-plane hysteresis loops with different range of magnetic fields have been measured for the series of superlattices. The coercive field of the ferromagnetic layer in SrRuO3–SrMnO3 superlattices is 12 times larger than that of the thin film of SrRuO3. This enhancement in the coercive field can be explained using the concept of the interplay of the pinning energy and the microscopic biased field.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Ee Antiferromagnetics

Selecting the growth sites of carbon nanotubes on silicon substrates by ion implantation

Yang Yue, Zhengjun Zhang, and Chao Liu

Appl. Phys. Lett. 88, 263115 (2006); http://dx.doi.org/10.1063/1.2217255 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2006

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Surface modification by xenon ion implantation could significantly influence the growth of carbon nanotubes on silicon substrates. By chemical vapor deposition using a mixture of ferrocene and xylene as the precursor, carbon nanotubes preferably grew on silicon substrates at areas implanted by xenon ions, leaving the unimplanted areas blank. This is due to the nanometer-scale (4–5 nm) surface roughness induced by ion implantation and oxidation of the roughened surface during implantation and carbon nanotube growth. This study provides an alternative idea to predetermine the growth sites of nanotubes in fabricating arrays of aligned nanotubes on silicon substrates.
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81.07.De Nanotubes
81.05.U- Carbon/carbon-based materials
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.up Other materials
81.65.Mq Oxidation

Ordering Fe nanowire on stepped Cu (111) surface

X. Tan, G. Ouyang, and G. W. Yang

Appl. Phys. Lett. 88, 263116 (2006); http://dx.doi.org/10.1063/1.2218326 (3 pages) | Cited 6 times

Online Publication Date: 29 June 2006

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We describe formation of Fe nanowires with varying widths at the upper step edges on a vicinal Cu (111) surface via kinetic Monte Carlo simulations on the basis of step decoration effects. The existence of an optimal temperature and deposition flux for the formation of the well-ordered Fe nanowires on stepped Cu (111) surface is found. The physical origin of the formation of Fe nanowires on stepped Cu (111) surfaces is pursued.
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68.65.La Quantum wires (patterned in quantum wells)
61.46.-w Structure of nanoscale materials

Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots

Kuo-Feng Lin, Hsin-Ming Cheng, Hsu-Cheng Hsu, and Wen-Feng Hsieh

Appl. Phys. Lett. 88, 263117 (2006); http://dx.doi.org/10.1063/1.2218775 (3 pages) | Cited 29 times

Online Publication Date: 30 June 2006

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Both band gap engineering and spatial confinement of optical phonon were observed depending upon the size of ZnO quantum dots at room temperature. Size-dependent blueshifts of photoluminescence and absorption spectra reveal the quantum confinement effect. The measured Raman spectral shift and asymmetry for the E2(high) mode caused by localization of optical phonons agree well with that calculated by using the modified spatial correlation model.
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73.21.La Quantum dots
78.55.Et II-VI semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.67.Hc Quantum dots
78.30.Fs III-V and II-VI semiconductors
63.20.Pw Localized modes
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Hydrogen plasma dry etching method for field emission application

T. C. Cheng, J. Shieh, W. J. Huang, M. C. Yang, M. H. Cheng, H. M. Lin, and M. N. Chang

Appl. Phys. Lett. 88, 263118 (2006); http://dx.doi.org/10.1063/1.2218824 (3 pages) | Cited 8 times

Online Publication Date: 30 June 2006

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The ability to fabricate large-area, uniform emitters is an important factor in many vacuum microelectronics applications, especially for field emission displays. In this letter, we measured the field emission properties of uniform silicon nanowire emitters prepared by hydrogen plasma etching using in situ high-resolution scanning electron microscopy and a tungsten anode of 1 μm diameter. Our results indicate that the field emission properties are improved upon increasing the etching time; this process sharpens the nanowires’ geometry and lowers their work function. These highly uniform (with respect to length, diameter, and distribution) nanowires display great potential for application within many field emission nanoelectronics devices.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
79.70.+q Field emission, ionization, evaporation, and desorption
73.63.Bd Nanocrystalline materials

Optical luminescence from alkyl-passivated Si nanocrystals under vacuum ultraviolet excitation: Origin and temperature dependence of the blue and orange emissions

Y. Chao, A. Houlton, B. R. Horrocks, M. R. C. Hunt, N. R. J. Poolton, J. Yang, and L. Šiller

Appl. Phys. Lett. 88, 263119 (2006); http://dx.doi.org/10.1063/1.2216911 (3 pages) | Cited 16 times

Online Publication Date: 30 June 2006

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The origin and stability of luminescence are critical issues for Si nanocrystals which are intended for use as biological probes. The optical luminescence of alkyl-monolayer-passivated silicon nanocrystals was studied under excitation with vacuum ultraviolet photons (5.1–23 eV). Blue and orange emission bands were observed simultaneously, but the blue band only appeared at low temperatures (<175 K) and with high excitation energies (>8.7 eV). At 8 K, the peak wavelengths of the emission bands were 430±2 nm (blue) and 600±2 nm (orange). The orange and blue emissions originate from unoxidized and oxidized Si atoms, respectively.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Ap Elemental semiconductors
81.65.Rv Passivation
61.46.-w Structure of nanoscale materials

Compound nanostructures formed by metal nanoparticles dispersed on nanodendrites grown on insulator substrates

Guoqiang Xie, Minghui Song, Kazuo Furuya, Dmitri V. Louzguine, and Akihisa Inoue

Appl. Phys. Lett. 88, 263120 (2006); http://dx.doi.org/10.1063/1.2217261 (3 pages) | Cited 5 times

Online Publication Date: 30 June 2006

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A composite nanostructure consisting of Pt nanoparticle/W nanodendrite was fabricated on an insulator Al2O3 substrate using an electron-beam-induced deposition process combined with an ion sputtering method. W nanodendrites with the tips of 3 nm were grown self-standing at the edge of the Al2O3 substrate. The observed morphology is attributed to a growth mechanism involving an electrical charge-up on the substrate surface, movement of charges, and their accumulation on the convex surface of the substrate as well as at the tips of the deposits. Pt nanoparticles with an equilibrium face-centered-cubic structure were uniformly distributed on the W nanodendrites. These composite nanostructures have potential for application in the fields of catalysis and nanodevices.
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81.16.-c Methods of micro- and nanofabrication and processing
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Cd Deposition by sputtering
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