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Applied Physics Letters / Volume 88 / Issue 3 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 88, 031907 (2006); doi:10.1063/1.2164433 (3 pages)

Modeling of band gap properties of GaInNP alloys lattice matched to GaAs

I. A. Buyanova1, M. Izadifard1, W. M. Chen1, Y. G. Hong2, and C. W. Tu2

1Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden
2Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093

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(Received 4 October 2005; accepted 19 November 2005; published online 18 January 2006)

Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN = 2.1±0.1 eV and CMN = 1.7±0.2 eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, indium compounds, gallium arsenide, III-V semiconductors, energy gap, localised states

PACS

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2164433

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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