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16 Jan 2006

Volume 88, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 88, 034101 (2006); http://dx.doi.org/10.1063/1.2164910 (3 pages)

W. K. Hensinger, S. Olmschenk, D. Stick, D. Hucul, M. Yeo, M. Acton, L. Deslauriers, C. Monroe, and J. Rabchuk
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Low-field electron mobility in wurtzite InN

V. M. Polyakov and F. Schwierz

Appl. Phys. Lett. 88, 032101 (2006); http://dx.doi.org/10.1063/1.2166195 (3 pages) | Cited 71 times

Online Publication Date: 17 January 2006

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We report on the low-field electron mobility in bulk wurtzite InN at room temperature and over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) method. All relevant phonon scatterings are included in the MC simulation. The scattering with ionized impurities is considered in the basic Brooks-Herring and Conwell-Weisskopf formulations. For the steady-state transport, the drift velocity attains a peak value of ∼ 5×107 cm/s at an electric field strength of 32 kV/cm. The highest calculated low-field mobility for undoped InN amounts to ∼ 14 000 cm2/V s at room temperature. We compare our theoretically calculated low-field mobilities with experimental data available in the literature and obtain a quite satisfactory agreement. Finally, an empirical low-field mobility model based on the MC simulation results and experimental mobility data is presented.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
63.20.-e Phonons in crystal lattices
61.72.S- Impurities in crystals

Rashba effect in InGaAs/InP parallel quantum wires

V. A. Guzenko, J. Knobbe, H. Hardtdegen, Th. Schäpers, and A. Bringer

Appl. Phys. Lett. 88, 032102 (2006); http://dx.doi.org/10.1063/1.2165279 (3 pages) | Cited 21 times

Online Publication Date: 17 January 2006

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We report on the Rashba effect in InGaAs/InP quantum wires with an effective width ranging from 1.18 μm down to 210 nm. By measuring 160 wires in parallel universal conductance, fluctuations could be suppressed so that the characteristic beating effect in the magnetorestistance was observable down to very low magnetic fields. A characteristic shift of the nodes in the beating pattern was found for decreasing wire width. By assuming a realistic soft-wall potential, the experimentally observed node positions could be reproduced. For the range of measured wires, our study confirms that the Rashba coupling parameter does not change with wire width.
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73.63.Nm Quantum wires
72.20.My Galvanomagnetic and other magnetotransport effects

Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer

M. L. Lee, J. K. Sheu, and S. W. Lin

Appl. Phys. Lett. 88, 032103 (2006); http://dx.doi.org/10.1063/1.2166477 (3 pages) | Cited 11 times

Online Publication Date: 18 January 2006

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The Schottky barrier heights of metal contacts, including WSi0.8, Cr, Ti, Pt, and Ni, on n-type gallium nitride (GaN) with a GaN cap layer grown at low-temperature (LTG) were studied. Higher barriers can be formed by introducing LTG GaN on top of the conventional structures. The higher Schottky barrier observed in samples with the LTG GaN cap layer may be due to the facts that the high-resistivity LTG GaN layer may passivate the surface defects (pits) formed from threading dislocations or it may cause the Fermi-level pinning effect at the metal/semiconductor interface, revealing a weak dependence of Schottky barrier height on the metal work function. The measured barrier heights of the LTG GaN-capped samples were 1.02–1.13 eV.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.20.At Surface states, band structure, electron density of states
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
73.61.Ey III-V semiconductors

Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

V. V. Afanas’ev, A. Stesmans, L. F. Edge, D. G. Schlom, T. Heeg, and J. Schubert

Appl. Phys. Lett. 88, 032104 (2006); http://dx.doi.org/10.1063/1.2164432 (3 pages) | Cited 20 times

Online Publication Date: 18 January 2006

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Incorporation of a ∼ 1-nm-thick SiOx interlayer is found to have little effect on the band alignment between a (100) Si substrate and amorphous LaAlO3, LaScO2, and Sc2O3 insulators. All of these materials are found to give the same band offsets irrespective of differences in their composition, even when contacting Si directly. This suggests that the bulk electron states and properties of the semiconductor and insulator layer play a much more important role in determining the band lineup at the interface than any dipoles related to particular bonding configurations encountered in the transition region between Si and these oxides.
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73.20.At Surface states, band structure, electron density of states

Valence band offset of wurtzite InN/AlN heterojunction determined by photoelectron spectroscopy

C.-L. Wu, C.-H. Shen, and S. Gwo

Appl. Phys. Lett. 88, 032105 (2006); http://dx.doi.org/10.1063/1.2165195 (3 pages) | Cited 27 times

Online Publication Date: 18 January 2006

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The valence band offset (VBO) at the wurtzite-type, nitrogen-polarity InN/AlN(000math) heterojunction has been determined by photoelectron spectroscopy to be 3.10±0.04 eV. The heterojunction samples used for this study have an atomically abrupt 8:9 commensurate interface, at which every eight-unit cell of InN aligns exactly with every nine-unit cell of AlN. The commensurately matched InN/AlN heterojunction system grown on Si(111) is particularly suitable for the determination of VBO since both InN and AlN epitaxial layers are completely relaxed and the strain-induced piezoelectric fields, which are difficult to be quantitatively determined, have a negligible effect.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.20.At Surface states, band structure, electron density of states
71.20.Nr Semiconductor compounds

Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO

V. Bhosle, A. Tiwari, and J. Narayan

Appl. Phys. Lett. 88, 032106 (2006); http://dx.doi.org/10.1063/1.2165281 (3 pages) | Cited 81 times

Online Publication Date: 18 January 2006

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This letter reports the metallic conductivity in Ga:ZnO system at room temperature and a metal-semiconductor transition (MST) behavior at low temperatures. Zn0.95Ga0.05O films, deposited by pulsed laser deposition in the pressure range of ∼ 10−2 Torr of oxygen, were found to be crystalline and exhibited degeneracy at room temperature with the electrical resistivity close to 1.4×10−4 Ω cm and transmittance >80% in the visible region. Temperature dependent resistivity measurements of these highly conducting and transparent films also showed, for the first time, a MST at ∼ 170 K. Mechanisms responsible for these observations are discussed in the terms of dopant addition and its effect on ionization efficiency of oxygen vacancies.
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81.05.Dz II-VI semiconductors
72.60.+g Mixed conductivity and conductivity transitions
73.61.Ga II-VI semiconductors
78.66.Hf II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
81.15.Fg Pulsed laser ablation deposition

Terahertz response of hot electrons in dilute nitride Ga(AsN) alloys

A. Ignatov, A. Patanè, O. Makarovsky, and L. Eaves

Appl. Phys. Lett. 88, 032107 (2006); http://dx.doi.org/10.1063/1.2164906 (3 pages) | Cited 24 times

Online Publication Date: 19 January 2006

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We model theoretically an unusual ac negative differential mobility (NDM) effect that occurs when electrons are accelerated by an electric field in the highly nonparabolic conduction band of dilute nitride Ga(AsN) alloys. By solving balance equations that take into account the negative effective mass of electrons and the velocity and energy relaxation processes, we derive an expression for the maximum response frequency, fmax, associated with the NDM. Our predicted values of fmax depend on material composition and can be tuned by the applied electric field up to terahertz frequencies.
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72.30.+q High-frequency effects; plasma effects
72.80.Ey III-V and II-VI semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.20.Nr Semiconductor compounds
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