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16 Jan 2006

Volume 88, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 034101 (2006); http://dx.doi.org/10.1063/1.2164910 (3 pages)

W. K. Hensinger, S. Olmschenk, D. Stick, D. Hucul, M. Yeo, M. Acton, L. Deslauriers, C. Monroe, and J. Rabchuk
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Guided modes supported by plasmonic films with a periodic arrangement of subwavelength slits

Peter B. Catrysse, Georgios Veronis, Hocheol Shin, Jung-Tsung Shen, and Shanhui Fan

Appl. Phys. Lett. 88, 031101 (2006); http://dx.doi.org/10.1063/1.2164905 (3 pages) | Cited 13 times

Online Publication Date: 17 January 2006

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We calculate the guided band diagram of a metallic film with a one-dimensional periodic arrangement of cut-through subwavelength slits. We find that this system supports two distinct types of guided modes propagating in a direction perpendicular to the slits when the metal obeys a plasmonic dispersion model. The first type is a well-known surface mode. The second type results from the presence of a subwavelength electromagnetic resonance inside the slits and closely resembles waveguide modes in a dielectric slab. We refer to them as effective dielectric slab modes. We show how the behavior of both modes is affected by film thickness and surface properties.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Fabrication and design of an integrable subwavelength ultrabroadband dielectric mirror

Lu Chen, Michael C. Y. Huang, Carlos F. R. Mateus, Connie J. Chang-Hasnain, and Y. Suzuki

Appl. Phys. Lett. 88, 031102 (2006); http://dx.doi.org/10.1063/1.2164920 (3 pages) | Cited 17 times

Online Publication Date: 17 January 2006

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We have designed and fabricated a subwavelength grating (SWG) broadband mirror whose performance depends on key factors, including SWG period, duty cycle, and angle of incident light. The fabricated SWGs exhibit high reflectivity ( ≥ 96%), when the grating periods are varied from 650 to 750 nm and duty cycles are varied from 55% to 65%. The bandwidth and reflectivity of these mirrors are remarkably robust to variations in design and fabrication. The SWGs can be designed as broadband mirrors from microwave to visible wavelengths.
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42.25.Fx Diffraction and scattering
42.25.Gy Edge and boundary effects; reflection and refraction
42.25.Hz Interference
42.25.Ja Polarization
42.79.Dj Gratings
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Hp Optical processors, correlators, and modulators

Widely tunable type-II interband cascade laser

Sergey Suchalkin, Mikhail V. Kisin, Serge Luryi, Gregory Belenky, Fred J. Towner, John D. Bruno, Carlos Monroy, and Richard L. Tober

Appl. Phys. Lett. 88, 031103 (2006); http://dx.doi.org/10.1063/1.2165289 (3 pages) | Cited 11 times

Online Publication Date: 17 January 2006

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We discuss an ultrawide, voltage-tunable type-II mid-IR interband cascade laser. Its design has a charge accumulation layers outside of the optically active quantum wells that unclamps the electron-hole concentrations and facilitates above-threshold Stark shifts. Our results demonstrate laser tuning of 120 nm (120 cm−1).
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.72.Ai Infrared sources

Engineering the imaging properties of a metallic photonic-crystal slab lens

Shuai Feng, Zhi-Yuan Li, Zhi-Fang Feng, Bing-Ying Cheng, and Dao-Zhong Zhang

Appl. Phys. Lett. 88, 031104 (2006); http://dx.doi.org/10.1063/1.2166470 (3 pages) | Cited 5 times

Online Publication Date: 18 January 2006

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Focusing properties of a two-dimensional metallic photonic crystal (PC) slab lens are studied through the finite-difference time-domain technique. The PC consists of a square lattice of metallic cylinders immersed in a dielectric background. A good-quality image can form in the opposite side of the slab in both the lowest and second higher transverse magnetic-polarized photonic bands, consistent with the analysis of equifrequency-surface contours. The all-angle negative refraction can be realized and controlled by simply adjusting the background material permittivity,.
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42.70.Qs Photonic bandgap materials
42.79.Bh Lenses, prisms and mirrors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3

Encarnación G. Víllora, Kiyoshi Shimamura, Kenji Kitamura, and Kazuo Aoki

Appl. Phys. Lett. 88, 031105 (2006); http://dx.doi.org/10.1063/1.2164407 (3 pages) | Cited 12 times

Online Publication Date: 18 January 2006

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Epitaxial growth of β-Ga2O3 thin films by the rf-plasma-assisted molecular-beam epitaxy technique is demonstrated. Growth on (1 0 0) β-Ga2O3 substrates leads to very smooth epilayers, while (2 0 math) and (1 0 0) oriented β-Ga2O3 films are obtained on (0 0 1) sapphire and (1 0 0) MgO substrates, respectively. Internal transmittance, refractive index and direct bandgaps are determined.
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81.05.Hd Other semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
78.66.Li Other semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.20.Nr Semiconductor compounds

Optical phase characterization of active semiconductor microdisk resonators in transmission

Andrew Stapleton, Stephen Farrell, Hooman Akhavan, Roshanak Shafiiha, Zhen Peng, Seung-June Choi, John O’Brien, P. Daniel Dapkus, and William Marshall

Appl. Phys. Lett. 88, 031106 (2006); http://dx.doi.org/10.1063/1.2165286 (3 pages) | Cited 5 times

Online Publication Date: 18 January 2006

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The optical phase characteristics of an indium phosphide (InP) vertically coupled microdisk were experimentally demonstrated. Overcoming the material losses by injecting current into the active quantum well microdisk layer has allowed us to observe the phase behavior in all three coupling regimes. The ability to tune the resonant wavelength of this device makes it suitable for use as a phase modulator or tunable optical delay element.
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42.79.Hp Optical processors, correlators, and modulators
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling

High Q (33 000) all-epitaxial microcavity for quantum dot vertical-cavity surface-emitting lasers and quantum light sources

Andreas Muller, Chih-Kang Shih, Jaemin Ahn, Dingyuan Lu, Deepa Gazula, and Dennis G. Deppe

Appl. Phys. Lett. 88, 031107 (2006); http://dx.doi.org/10.1063/1.2158519 (3 pages) | Cited 10 times

Online Publication Date: 19 January 2006

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Data are presented on the modal and lasing characteristics of a new type of vertical-cavity surface-emitting laser that uses an intracavity mesa to confine the optical mode, with the mesa also confining the quantum dot active region. The quantum dot active region is lithographically isolated within the intracavity mesa using etching and epitaxial regrowth to form an all-epitaxial microcavity light source. Cavity quality factors as high as 33 000 are measured, and ground state lasing is demonstrated with a single quantum dot active layer for temperatures up to ∼ 110 K.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Highly directional stadium-shaped polymer microlasers

M. Lebental, J. S. Lauret, R. Hierle, and J. Zyss

Appl. Phys. Lett. 88, 031108 (2006); http://dx.doi.org/10.1063/1.2159099 (3 pages) | Cited 46 times

Online Publication Date: 19 January 2006

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The far-field emission of two-dimensional stadium-shaped microlasers is investigated. Stadium-shaped microcavities based on a laser dye embedded in a polymer matrix have been elaborated. Such stadium-shaped microresonators, made by lithography and reactive ion etching have displayed quality factors greater than 6000 and a high output power. The highly directional far-field pattern of the emitted beam (full width at half maximum ∼ 15°) reflects the symmetries of the stadium shape.
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42.60.By Design of specific laser systems
42.55.Mv Dye lasers
42.55.Sa Microcavity and microdisk lasers

Predictive aberration correction for multilayer optical data storage

Martin J. Booth, Michael Schwertner, Tony Wilson, Masaharu Nakano, Yoshimasa Kawata, Masahito Nakabayashi, and Sou Miyata

Appl. Phys. Lett. 88, 031109 (2006); http://dx.doi.org/10.1063/1.2166684 (3 pages) | Cited 8 times

Online Publication Date: 19 January 2006

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The recording of data in multiple layers, rather than a single layer, permits a significant increase in the capacity of optical data storage devices. However, focusing to the different layers introduces different amounts of depth-dependent aberrations. Variable aberration correction is therefore necessary to maintain diffraction-limited operation. We demonstrate the use of adaptive optics to predict and correct these aberrations for both the recording and read-out of such media.
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42.79.Vb Optical storage systems, optical disks
42.15.Fr Aberrations

Actively tuned and spatially trapped polaritons

R. B. Balili, D. W. Snoke, L. Pfeiffer, and K. West

Appl. Phys. Lett. 88, 031110 (2006); http://dx.doi.org/10.1063/1.2164431 (3 pages) | Cited 28 times

Online Publication Date: 19 January 2006

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We report active tuning of the polariton resonance of quantum well excitons in a semiconductor microcavity using applied stress. Starting with the quantum well exciton energy higher than the cavity photon mode, we use stress to reduce the exciton energy and bring it into resonance with the photon mode. At the point of zero detuning, line narrowing and strong increase of the photoluminescence are seen. By the same means, we create an in-plane harmonic potential for the polaritons, which allows trapping, potentially making possible Bose-Einstein condensation of polaritons analogous to trapped atoms. We demonstrate drift of the polaritons into this trap.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.Fg Quantum wells
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.55.Cr III-V semiconductors

Visible resonant modes in GaN-based photonic crystal membrane cavities

Cedrik Meier, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. Hu

Appl. Phys. Lett. 88, 031111 (2006); http://dx.doi.org/10.1063/1.2166680 (3 pages) | Cited 21 times

Online Publication Date: 20 January 2006

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Photonic crystal membrane cavities play a key role as building blocks in the realization of several applications, including quantum information and photonic circuits. Thus far, there has been no work on defect cavities with active layers emitting in the UV to green range of the spectrum based on the (Al,In,Ga)N material system. While this material system has great potential for a new generation of optoelectronic devices, there are several obstacles for the fabrication of GaN-based membrane cavities, including the absence of a conventional selective chemical wet etch. Here, we demonstrate the first fabrication of fully undercut GaN photonic crystal membranes containing an InGaN multiquantum well layer, fabricated using band-gap-selective photoelectrochemical etching. A postfabrication coating of Ta2O5 is used to tune the cavity modes into resonance with the quantum well emission, and the fabricated membranes exhibit resonant modes with Q = 300.
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78.30.−j
78.35.+c Brillouin and Rayleigh scattering; other light scattering
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
77.22.−d
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