APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

16 Jan 2006

Volume 88, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 034101 (2006); http://dx.doi.org/10.1063/1.2164910 (3 pages)

W. K. Hensinger, S. Olmschenk, D. Stick, D. Hucul, M. Yeo, M. Acton, L. Deslauriers, C. Monroe, and J. Rabchuk
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Thermal conductivity of Fe nanofluids depending on the cluster size of nanoparticles

K. S. Hong, Tae-Keun Hong, and Ho-Soon Yang

Appl. Phys. Lett. 88, 031901 (2006); http://dx.doi.org/10.1063/1.2166199 (3 pages) | Cited 16 times

Online Publication Date: 17 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanofluids have been attractive for the last few years with the enormous potential to improve the efficiency of heat transfer fluids. This work focuses on the effect of the clustering of nanoparticles on the thermal conductivity of nanofluids. Large enhancement of the thermal conductivity is observed in Fe nanofluids sonicated with high powered pulses. The average size of the nanoclusters and thermal conductivity of sonicated nanofluids are measured as time passes after the sonication stopped. It is found from the variations of the nanocluster size and thermal conductivity that the reduction of the thermal conductivity of nanofluids is directly related to the agglomeration of nanoparticles. The thermal conductivity of Fe nanofluids increases nonlinearly as the volume fraction of nanoparticles increases. The nonlinearity is attributed to the rapid clustering of nanoparticles in condensed nanofluids. The thermal conductivities of Fe nanofluids with the three lowest concentrations are fitted to a linear function. The Fe nanofluids show a more rapid increase of the thermal conductivity than Cu nanofluids as the volume fraction of the nanoparticles increases.
Show PACS
66.90.+r Other topics in nonelectronic transport properties of condensed matter (restricted to new topics in section 66)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

E. Nogales, R. W. Martin, K. P. O’Donnell, K. Lorenz, E. Alves, S. Ruffenach, and O. Briot

Appl. Phys. Lett. 88, 031902 (2006); http://dx.doi.org/10.1063/1.2162797 (3 pages) | Cited 7 times

Online Publication Date: 17 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps provide good protection up to annealing temperatures of at least 1300 °C, but show localized failure in the form of irregularly shaped holes with a lateral size of 1–2 μm which extend through the cap into the GaN layer beneath. Compositional micrographs, obtained using wavelength dispersive x-ray analysis, suggest that these holes form when GaN dissociates and ejects through cracks already present in the as-grown AlN caps due to the large lattice mismatch between the two materials. Implantation damage enhances the formation of the holes during annealing. Simultaneous room temperature cathodoluminescence mapping showed that the Eu luminescence is reduced in N-poor regions. Hence, exposed GaN dissociates first by outdiffusion of nitrogen through AlN cracks, thereby opening a hole in the cap through which Ga subsequently evaporates.
Show PACS
81.07.Bc Nanocrystalline materials
81.05.Ea III-V semiconductors
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Pressure-induced structural transitions in Tb-pyrochlore oxides

Ravhi S. Kumar, Andrew L. Cornelius, Malcolm F. Nicol, Kinson C. Kam, Anthony K. Cheetham, and Jason S. Gardner

Appl. Phys. Lett. 88, 031903 (2006); http://dx.doi.org/10.1063/1.2165212 (3 pages) | Cited 13 times

Online Publication Date: 17 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The structure of Tb2Ti2O7, Tb2Sn2O7, and Tb2TiSnO7 were studied at high pressures (P<1 Mbar) using synchrotron radiation and angular dispersive x-ray diffraction. The cubic lattice was shown to distort into a monoclinic phase before exhibiting total structural disorder (amorphization) in all three samples. Our experiments demonstrate that partial replacement of Sn with Ti significantly enhances the bulk modulus and increases the structural stability (crystalline state) to much higher pressures. Furthermore, pressure induces anion before cation disorder during the order-disorder transition. These results are compared to radiation damage studies that show order-disorder transitions.
Show PACS
62.50.-p High-pressure effects in solids and liquids
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Surface microstructure analysis of cubic boron nitride films by transmission electron microscopy

X. M. Meng, W. J. Zhang, C. Y. Chan, C. S. Lee, I. Bello, and S. T. Lee

Appl. Phys. Lett. 88, 031904 (2006); http://dx.doi.org/10.1063/1.2165288 (3 pages) | Cited 4 times

Online Publication Date: 17 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A simple coating technique was introduced to preserve the surface structure of samples for transmission electron microscopy (TEM) characterization, and used to study boron nitride (BN) films. A gold film precoated on the surface of BN films served to protect the BN surface against ion damages during sample preparation, and to separate and distinguish the film surface structure from the TEM glue. The technique enabled the observation of detailed surface microstructures of cubic BN (cBN) films, which provided direct evidences for understanding cBN growth mechanisms. The TEM sample technique is expected to be generally applicable to other film systems, particularly those with an amorphous topmost layer.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Lp Transmission electron microscopy (TEM)
81.65.-b Surface treatments

Nickel-induced enhancement of photoluminescence from Si-rich silica films

Y. He, K. Ma, L. Bi, J. Y. Feng, and Z. J. Zhang

Appl. Phys. Lett. 88, 031905 (2006); http://dx.doi.org/10.1063/1.2165292 (3 pages)

Online Publication Date: 17 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of Ni on the near-infrared luminescence emitting from silicon nanocrystals embedded in SiO2 matrix has been investigated. According to the thermodynamics calculation, nickel can give additional driving force to the phase separation process. The photoluminescence intensity increases with the increasing annealing temperature because of the crystallization of amorphous silicon in SiOx films. The intensity of near-infrared emission of SiO1.56/Ni/Si is stronger by a factor of 5 than that of regular specimen after annealing at 1000 or 1100 °C due to the increase of the density of Si nanocrystals.
Show PACS
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
64.75.-g Phase equilibria
65.40.G- Other thermodynamical quantities
78.55.-m Photoluminescence, properties and materials
61.72.Cc Kinetics of defect formation and annealing
64.70.K- Solid-solid transitions

Density determination of focused-electron-beam-induced deposits with simple cantilever-based method

I. Utke, V. Friedli, J. Michler, T. Bret, X. Multone, and P. Hoffmann

Appl. Phys. Lett. 88, 031906 (2006); http://dx.doi.org/10.1063/1.2158516 (3 pages) | Cited 19 times

Online Publication Date: 18 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Freestanding deposits are grown on a silicon cantilever from a precursor gas by an electron induced process. Deposit mass determination is performed with an atomic force microscopy setup, where the cantilever resonance frequency shift, resulting from mechanical removal of the deposit, is measured. Deposits from hexafluoroacetylacetonato–Cu(I)–vinyltrimethylsilane show densities ranging from 2.05±0.45 to 3.75±0.55 g/cm3. Deposits from tetramethoxysilane have a constant density of (1.9±0.3) g/cm3. Densities of deposits from Co2(CO)8 and [RhCl(PF3)2]2 are linearly related to their composition. The ratio of impinging electrons per deposited atom, beam heating, and thermal stability of the precursor molecule determine the density and composition in focused-electron-beam-induced deposits.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects

Modeling of band gap properties of GaInNP alloys lattice matched to GaAs

I. A. Buyanova, M. Izadifard, W. M. Chen, Y. G. Hong, and C. W. Tu

Appl. Phys. Lett. 88, 031907 (2006); http://dx.doi.org/10.1063/1.2164433 (3 pages) | Cited 8 times

Online Publication Date: 18 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN = 2.1±0.1 eV and CMN = 1.7±0.2 eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys.
Show PACS
71.20.Nr Semiconductor compounds

Metamaterial with randomized patterns for negative refraction of electromagnetic waves

H. Chen, L. Ran, D. Wang, J. Huangfu, Q. Jiang, and J. A. Kong

Appl. Phys. Lett. 88, 031908 (2006); http://dx.doi.org/10.1063/1.2165088 (3 pages) | Cited 14 times

Online Publication Date: 18 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Artificial metamaterials made to date are all periodic in structure. Here we show that by randomizing contour patterns deposited lithographically on circuit board materials, a metamaterial characterized by a constitutive relation with negative constitutive parameters is produced in solid-state form. We clearly demonstrate the phenomenon of negative refraction to show that it is not produced by periodicity. This underlines the importance of using constitutive relations for media characterization in electromagnetic theory and suggests that metamaterials could be realized with composite materials or fabricated with various techniques by using versatile hosting materials.
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Real-time monitoring of plasma oxidation dynamics of subnanometer Al2O3 barriers for magnetic tunnel junctions

C. G. C. H. M. Fabrie, K. Knechten, J. T. Kohlhepp, H. J. M. Swagten, B. Koopmans, and W. J. M. de Jonge

Appl. Phys. Lett. 88, 031909 (2006); http://dx.doi.org/10.1063/1.2166696 (3 pages)

Online Publication Date: 19 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We show that over-oxidation of sub-nm thin Al2O3 barriers of magnetic tunnel junctions can be observed in real time using in situ differential ellipsometry measurements. The change in ellipsometry signal of Al layers grown on CoFe films is proportional to the amount of oxidized metallic material. As a result, the derivative of this signal is a direct measure of the oxidation rate. Further analysis of this oxidation rate allows us to determine the onset of the CoFe oxidation. We found the onset to be proportional to the deposited Al layer thickness. The amount of CoO determined from in situ x-ray photoelectron spectroscopy data on identical samples was found to be proportional to that obtained from ellipsometry.
Show PACS
81.65.Mq Oxidation
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
79.60.Jv Interfaces; heterostructures; nanostructures

Ion scattering and electron spectroscopy of the chemical species at a HF-prepared Si(211) surface

M. Jaime-Vasquez, M. Martinka, M. Groenert, and J. Dinan

Appl. Phys. Lett. 88, 031910 (2006); http://dx.doi.org/10.1063/1.2166682 (3 pages) | Cited 2 times

Online Publication Date: 19 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The species and the nature of their chemical bonds at the surface of a hydrogen-terminated Si(211) wafer were characterized using temperature desorption spectroscopy, ion scattering spectroscopy, and electron spectroscopy. The surface region is dominated by monohydride species with dihydrides present in small amounts. Fluorine is distributed across the top layer as largely a physisorbed species to the Si substrate. Low-energy math ions remove the H and F species with only minimal damage to the underlying region.
Show PACS
68.43.Vx Thermal desorption
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

ZnO p-n junction light-emitting diodes fabricated on sapphire substrates

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang

Appl. Phys. Lett. 88, 031911 (2006); http://dx.doi.org/10.1063/1.2166686 (3 pages) | Cited 118 times

Online Publication Date: 19 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A ZnO p-n junction light-emitting diode (LED) was fabricated on a-plane Al2O3 substrate by plasma-assisted molecular-beam epitaxy. NO plasma activated by a radio frequency atomic source was used to grow the p-type ZnO layer of the LED. The current-voltage measurements at low temperatures showed a typical diode characteristic with a threshold voltage of about 4.0 V under forward bias. With increasing temperature, the rectification characteristic was degraded gradually, and faded away at room temperature. Electroluminescence band of the ZnO p-n junction LED was located at the blue-violet region and was weakened significantly with increase of temperature. This thermal quenching of the electroluminescence was attributed to the degradation of the diode characteristic with temperature.
Show PACS
85.60.Jb Light-emitting devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Generation of misfit dislocations and stacking faults in supercritical thickness strained-Si/SiGe heterostructures

Y. Kimura, N. Sugii, S. Kimura, K. Inui, and W. Hirasawa

Appl. Phys. Lett. 88, 031912 (2006); http://dx.doi.org/10.1063/1.2167391 (3 pages) | Cited 13 times

Online Publication Date: 19 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Defects in the supercritical thickness strained-Si layer grown on a fully relaxed SiGe buffer layer were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM observation of chemically etched surfaces showed that etch pits having a crosshatch pattern due to misfit dislocations decrease and segments and deep valley profiles increase with an increase in the strain energy of the Si. We found that the segment corresponds to an extended dislocation, of which a 30° partial is in the strained-Si layer and a 90° partial is in the SiGe layer, and the deep valley corresponds to a stacking fault found by a high-resolution TEM observation. A model of the generation of the stacking fault related to development of the misfit dislocation is also discussed here.
Show PACS
81.05.Cy Elemental semiconductors
81.05.Hd Other semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Nn Stacking faults and other planar or extended defects
68.55.-a Thin film structure and morphology

First-principles calculations of structural and mechanical properties of Cu6Sn5

N. T. S. Lee, V. B. C. Tan, and K. M. Lim

Appl. Phys. Lett. 88, 031913 (2006); http://dx.doi.org/10.1063/1.2165280 (3 pages) | Cited 23 times

Online Publication Date: 19 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The elastic constants of polycrystalline Cu6Sn5—an intermetallic in lead-free alternatives of several material systems—are presented. The results are obtained by applying: (i) Reported crystallographic structure of monoclinic single crystal Cu6Sn5, (ii) structure optimization and determination of single crystal elastic constants from first principle calculations, and (iii) limit analysis of polycrystal stiffness based on single crystal properties. The agreement between the calculated Young’s modulus (120 GPa) and those from nanoindentation experiments (112–125 GPa), and the tight bounds on the predicted polycrystal values give a measure of confidence in other calculated properties for which experimental data are unavailable.
Show PACS
61.66.Dk Alloys
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.D- Elasticity
62.20.M- Structural failure of materials
62.20.Qp Friction, tribology, and hardness

Elastic properties of MFe3N (M = Ni, Pd, Pt) studied by ab initio calculations

Denis Music and Jochen M. Schneider

Appl. Phys. Lett. 88, 031914 (2006); http://dx.doi.org/10.1063/1.2165285 (3 pages) | Cited 37 times

Online Publication Date: 19 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using ab initio calculations, we have studied the correlation between the electronic structure and elastic properties of MFe3N phases (M = Ni, Pd, Pt). These ternary nitrides possess a bulk-modulus-to-C44 ratio from 2.3 to 2.9, a rather unusual ratio for nitrides. This may be understood based on the electronic structure: Predominantly covalent-ionic Fe–N layers are interleaved with predominantly metallic Fe–M layers. We propose that the unusually large bulk-modulus-to-C44 ratio is a consequence of weak coupling between the Fe–N and Fe–M layers (giving rise to a low C44) as well as strong coupling within Fe–N layers (giving rise to a large bulk modulus).
Show PACS
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
71.15.-m Methods of electronic structure calculations
71.20.Ps Other inorganic compounds

SiC pore surfaces: Surface studies of 4H–SiC(1math02) and 4H–SiC(math10math)

U. Starke, W. Y. Lee, C. Coletti, S. E. Saddow, R. P. Devaty, and W. J. Choyke

Appl. Phys. Lett. 88, 031915 (2006); http://dx.doi.org/10.1063/1.2166484 (3 pages) | Cited 6 times

Online Publication Date: 20 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The morphology and atomic structure of 4H–SiC(1math02) and 4H–SiC(math10math) surfaces, i.e., the surfaces found in the triangular channels of porous 4H–SiC, have been investigated using atomic force microscopy, low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). After hydrogen etching, the surfaces show steps parallel and perpendicular to the c axis, yet drastically different morphologies for the two isomorphic orientations. Both surfaces immediately display a sharp LEED pattern. Together with the presence of oxygen in the AES spectra, this indicates the development of an ordered oxide. Both surfaces show an oxygen-free well-ordered surface after Si deposition and annealing.
Show PACS
68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.43.Gt Powders, porous materials
68.37.Ps Atomic force microscopy (AFM)
79.20.Fv Electron impact: Auger emission
81.65.Cf Surface cleaning, etching, patterning

Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process

X. Chen and T. Uesugi

Appl. Phys. Lett. 88, 031916 (2006); http://dx.doi.org/10.1063/1.2158487 (3 pages) | Cited 1 time

Online Publication Date: 20 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
From one uninterrupted growth process, GaN films were deposited on maskless stripe-patterned Si(111) substrates using the facet-initiated growth technique. The epilayer with a flat surface has a thickness of ∼ 1.3 μm. The influence of stress on the behavior of dislocations in the crystal during growth was observed by the transmission electron microscopy (TEM). Concentrated lines of dislocations were found along the coalescence boundaries by atomic force microscopy (AFM). Few dislocations were detected in the other area. The average threading dislocation density of the GaN layer was decreased to ∼ 1.7×108 cm−2. These dislocations have pure or partial screw dislocation characteristics.
Show PACS
81.05.Ea III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)

Composition and resistivity changes of reactively sputtered W–Si–N thin films under vacuum annealing

A. Vomiero, E. Boscolo Marchi, G. Mariotto, A. Quaranta, G. Della Mea, G. Ottaviani, R. Tonini, M. Butturi, and G. Martinelli

Appl. Phys. Lett. 88, 031917 (2006); http://dx.doi.org/10.1063/1.2166691 (3 pages)

Online Publication Date: 20 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
W–Si–N layers about 200 nm thick with different nitrogen content were reactively sputtered from a W5Si3 target on oxidized silicon substrates. The thermal stability of the films’ composition and resistivity was studied with ion beam analysis and four-point probe measurements. Upon vacuum annealing from 600 to 980 °C for 1.5 h, a sample with an initial 56 at. % of nitrogen gradually loses nitrogen down to 36%. This composition lies close to the W–Si3N4 tie line. Concurrently, the room temperature resistivity decreases from 4.7 to about 2 mΩ cm. The composition changes only a little for a sample whose initial composition is near the W–Si3N4 tie line and the resistivity changes significantly less than for the nitrogen-rich film. Interpretations are discussed.
Show PACS
73.61.Ng Insulators
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
61.72.Cc Kinetics of defect formation and annealing

Oxide-free InSb (100) surfaces by molecular hydrogen cleaning

R. Tessler, C. Saguy, O. Klin, S. Greenberg, E. Weiss, R. Akhvlediani, R. Edrei, and A. Hoffman

Appl. Phys. Lett. 88, 031918 (2006); http://dx.doi.org/10.1063/1.2162702 (3 pages) | Cited 10 times

Online Publication Date: 20 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report that annealing of an oxidized InSb (100) single-crystal sample at 250 °C under molecular hydrogen flow [molecular hydrogen cleaning (MHC)] results in complete desorption of the surface oxides. Following this process, the surface morphology is found to be very smooth at the nanometric scale without any droplet structure and a nearly 1:1 In:Sb stoichiometry. MHC was applied to remove the native oxide of an epi-ready InSb(100) substrate used for molecular beam epitaxy growth of InSb films. These results suggest that MHC of InSb can be used as a very effective cleaning process for epitaxial film growth.
Show PACS
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.37.Ps Atomic force microscopy (AFM)
33.15.Fm Bond strengths, dissociation energies
81.65.Mq Oxidation
68.47.Gh Oxide surfaces
81.05.Ea III-V semiconductors

Root-like structure at the nanowire/substrate interface in GaAs nanowires

R. Banerjee, A. Bhattacharya, R. Ratan, A. P. Shah, M. R. Gokhale, B. M. Arora, A. Genc, and S. Kar

Appl. Phys. Lett. 88, 031919 (2006); http://dx.doi.org/10.1063/1.2159579 (3 pages)

Online Publication Date: 20 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the observation of a root-like structure at the interface between GaAs nanowires and the (100) single-crystal GaAs substrate. These nanowires were grown via the vapor-liquid-solid mechanism using metalorganic vapor phase epitaxy. The root-like structure extends from the base of the nanowires into the substrate and has been investigated in detail using transmission electron microscopy and high-resolution electron microscopy. While the nanowires predominantly exhibit the zinc-blende type diamond cubic structure with the growth axis parallel to ⟨111⟩ and growth twins perpendicular to the growth axis, the root regions have a CdTe type orthorhombic structure that has been reported to occur in GaAs only under high-pressure conditions.
Show PACS
81.05.Ea III-V semiconductors
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.16.-c Methods of micro- and nanofabrication and processing
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close