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23 Jan 2006

Volume 88, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 041101 (2006); http://dx.doi.org/10.1063/1.2166207 (3 pages)

E. U. Rafailov, A. D. McRobbie, M. A. Cataluna, L. O’Faolain, W. Sibbett, and D. A. Livshits
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Investigation of transition dynamics in a quantum-dot laser optically pumped by femtosecond pulses

E. U. Rafailov, A. D. McRobbie, M. A. Cataluna, L. O’Faolain, W. Sibbett, and D. A. Livshits

Appl. Phys. Lett. 88, 041101 (2006); http://dx.doi.org/10.1063/1.2166207 (3 pages) | Cited 8 times

Online Publication Date: 23 January 2006

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The behavior of a quantum-dot edge-emitting laser, optically pumped by femtosecond pulses, has been investigated. It has been observed that pulses generated by the laser from ground-state transitions have longer durations than those generated from the excited states. Interestingly, the shortest pulses were generated when the transitions from the first excited-state were dominant.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.By Design of specific laser systems

Pulsed- and continuous-mode operation at high temperature of strained quantum-cascade lasers grown by metalorganic vapor phase epitaxy

L. Diehl, D. Bour, S. Corzine, J. Zhu, G. Höfler, B. G. Lee, C. Y. Wang, M. Troccoli, and F. Capasso

Appl. Phys. Lett. 88, 041102 (2006); http://dx.doi.org/10.1063/1.2166206 (3 pages) | Cited 12 times

Online Publication Date: 23 January 2006

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We present the pulsed operation at room temperature of different strained InGaAs/AlInAs quantum-cascade lasers grown by low-pressure metalorganic vapor-phase epitaxy. Devices based on a bound-to-continuum transition design have threshold current densities in pulsed mode as low as 1.84 kA/cm2 at 300 K. Identical lasers grown at higher rate (0.5 nm/s) also have threshold current densities lower than 2 kA/cm2 at 300 K. Buried heterostructure lasers based on a double phonon resonance design were operated in continuous mode up to 280 K. Overall, the performance obtained from strained quantum cascade lasers deposited by metalorganic vapor-phase epitaxy are comparable with that of similar structures grown by molecular beam epitaxy.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Passive intracavity coherent addition of nine laser distributions

Liran Shimshi, Amiel A. Ishaaya, Vardit Ekhouse, Nir Davidson, and Asher A. Friesem

Appl. Phys. Lett. 88, 041103 (2006); http://dx.doi.org/10.1063/1.2167392 (3 pages) | Cited 1 time

Online Publication Date: 23 January 2006

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A highly efficient intracavity coherent addition of nine individual laser distributions is presented. It is achieved with two passive interferometric combiners that are introduced into the combined laser cavity. The results reveal that the combined output power is greater by almost a factor of 9 compared to that of the single laser distributions, while the beam quality is the same.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
07.60.Ly Interferometers

Optically switchable twist nematic grating based on a dye-doped liquid crystal film

San-Yi Huang, Shing-Trong Wu, and Andy Ying-Guey Fuh

Appl. Phys. Lett. 88, 041104 (2006); http://dx.doi.org/10.1063/1.2167393 (3 pages) | Cited 19 times

Online Publication Date: 23 January 2006

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The adsorption rate of methyl red dyes on a polymer surface is studied and determined to be much faster than that on indium-tin-oxide-coated glass. Therefore, an optically switchable twist-nematic grating is fabricated using a dye-doped liquid crystal cell, with a glass substrate coated with a polymer relief grating.
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42.70.Df Liquid crystals
42.79.Dj Gratings
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Wc Optical coatings
42.70.Jk Polymers and organics

Room temperature operation of epitaxial lead-telluride detectors monolithically integrated on midinfrared filters

M. Böberl, T. Fromherz, J. Roither, G. Pillwein, G. Springholz, and W. Heiss

Appl. Phys. Lett. 88, 041105 (2006); http://dx.doi.org/10.1063/1.2167396 (3 pages) | Cited 4 times

Online Publication Date: 23 January 2006

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Epitaxial PbTe midinfrared photodetectors are monolithically integrated on optical filter structures, like λ/4 antireflection layers or λ/2 microcavities. The antireflection layers result in an increased photoresponsivity of the detectors by a factor of 2.2, measured at the target wavelength of 3.1 μm. The microcavities, acting as efficient narrow band filters, consist of two PbEuTe/EuTe Bragg interference mirrors separated by a PbEuTe cavity layer. The photoresponse spectra of the detectors integrated with the microcavity filters exhibit a single resonance at 3.6 μm with a relative line width of 2.7%. The narrow photoresponse peak is in coincidence with a molecular absorption line typical for nonaromatic aldehydes. For all devices room temperature operation is demonstrated either in photoconductive or in photovoltaic operation mode.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Ci Filters, zone plates, and polarizers
42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors

Gain amplification and lasing properties of individual organic nanofibers

F. Quochi, F. Cordella, A. Mura, G. Bongiovanni, F. Balzer, and H.-G. Rubahn

Appl. Phys. Lett. 88, 041106 (2006); http://dx.doi.org/10.1063/1.2167397 (3 pages) | Cited 51 times

Online Publication Date: 23 January 2006

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We study gain and lasing processes in individual self-assembled organic nanofibers grown on mica substrates. The gain-induced response of the nanofibers is found to depend sensitively on the fiber structure. In homogeneous fibers where no coherent optical feedback is present, high net optical gain (of up to 103 cm−1) results in spectral narrowing at the material gain peaks. In the case of strong optical feedback, which occurs in long nanofibers with randomly distributed scattering centers, gain is in turn responsible for low-threshold coherent random laser action.
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42.55.Wd Fiber lasers
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.81.-i Fiber optics

Engineering clusters for table-top acceleration of ions

J. Jha, D. Mathur, and M. Krishnamurthy

Appl. Phys. Lett. 88, 041107 (2006); http://dx.doi.org/10.1063/1.2164414 (3 pages) | Cited 14 times

Online Publication Date: 23 January 2006

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Upon irradiation by ultrashort, intense laser light, inert gas clusters show an uncanny ability to absorb nearly all the incident optical energy, and to subsequently disburse this energy by producing very energetic ions and electrons. Practical realization of a table-top accelerator requires such a laser-cluster “ion source” to demonstrate sufficiency in terms of brightness, ion yield, and charge state. We show that by “engineering” the constituents of the cluster, using low ionization energy dopants, it is possible to significantly enhance the high-energy ion yield and ion charge states.
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33.80.Eh Autoionization, photoionization, and photodetachment

Pi-cell liquid crystal displays at arbitrary pretilt angles

Fion S. Yeung, Y. W. Li, and Hoi-Sing Kwok

Appl. Phys. Lett. 88, 041108 (2006); http://dx.doi.org/10.1063/1.2165284 (3 pages) | Cited 32 times

Online Publication Date: 23 January 2006

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The pi-cell is studied as a function of its pretilt angle. It is shown experimentally and theoretically that the critical holding voltage decreases as the pretilt angle increases. At high pretilt angles, the critical holding voltage becomes zero and the bend cell becomes stable. The measured total response time of the pi-cell decreases with the pretilt angle as well. There is almost a factor of 2 difference between the total response time of conventional pi-cell and the no-bias bend cell.
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42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals

Electric-field-coupled resonators for negative permittivity metamaterials

D. Schurig, J. J. Mock, and D. R. Smith

Appl. Phys. Lett. 88, 041109 (2006); http://dx.doi.org/10.1063/1.2166681 (3 pages) | Cited 112 times

Online Publication Date: 24 January 2006

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A lithographically patterned inductive-capacitive resonator is described that has a strong electric response. This resonator can be used to construct metamaterials with desired positive or negative permittivity. Such materials provide an alternative to wire media, and have the benefit of not requiring continuous current paths between unit cells. A planar medium composed of these resonators was simulated, fabricated, and measured in the microwave frequency range.
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84.40.Az Waveguides, transmission lines, striplines

Highly efficient stimulated Raman scattering of picosecond pulses in KTiOPO4

Valdas Pasiskevicius, Carlota Canalias, and Fredrik Laurell

Appl. Phys. Lett. 88, 041110 (2006); http://dx.doi.org/10.1063/1.2166683 (3 pages) | Cited 11 times

Online Publication Date: 24 January 2006

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High-efficiency picosecond stimulated Raman scattering (SRS) by phonon-polaritons has been observed in KTiOPO4 in a single pass through a 10 mm long crystal. For pulses longer than 10 ps, the SRS waves formed a symmetric pattern consisting of four distinct beams: SRS Stokes and anti-Stokes wavelengths originating both from the near-infrared pump and from the scattering of the second harmonic of the pump. At peak intensities above 10 GW/cm2 and pulse length of 1.5 ps, the SRS character changes into what can be called “runaway” Raman scattering with efficiencies exceeding 50% and Raman gain spreading over 60 THz.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.−k
42.70.Mp Nonlinear optical crystals

Room-temperature continuous-wave operation of quantum-cascade lasers at λ ∼ 4 μm

J. S. Yu, S. R. Darvish, A. Evans, J. Nguyen, S. Slivken, and M. Razeghi

Appl. Phys. Lett. 88, 041111 (2006); http://dx.doi.org/10.1063/1.2167394 (3 pages) | Cited 32 times

Online Publication Date: 24 January 2006

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High-power cw λ ∼ 4 μm quantum-cascade lasers (QCLs) are demonstrated. The effect of different cavity length and laser die bonding is also investigated. For a high-reflectivity-coated 11-μm-wide and 4-mm-long epilayer-down bonded QCL, cw output powers as high as 1.6 W at 80 K and 160 mW at 298 K are obtained, and the cw operation is achieved up to 313 K with 12 mW. The laser exhibits a threshold current density of 1.96 kA/cm2, a slope efficiency of 737 mW/A, and a maximum wall-plug efficiency of 0.9% under cw mode at 298 K. In pulsed mode, a maximum average power of 552 mW at 298 K is achieved at 45% duty cycle and a characteristic temperature is 176 K from 80 to 393 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect

Eiichi Kuramochi, Masaya Notomi, Satoshi Mitsugi, Akihiko Shinya, Takasumi Tanabe, and Toshifumi Watanabe

Appl. Phys. Lett. 88, 041112 (2006); http://dx.doi.org/10.1063/1.2167801 (3 pages) | Cited 143 times

Online Publication Date: 24 January 2006

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We propose an ultrahigh quality factor (Q) photonic crystal slab nanocavity created by the local width modulation of a line defect. We show numerically that this nanocavity has an intrinsic Q value of up to 7×107. Transmission measurements for fabricated Si photonic-crystal-slab nanocavities directly coupled to input/output waveguides have exhibited a loaded Q value of ∼ 800 000. These theoretical and experimental Q values are very high for photonic crystal nanocavities. In addition, we demonstrate that simply shifting two holes away from a line defect is sufficient to achieve an ultrahigh Q value both theoretically and experimentally.
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42.70.Qs Photonic bandgap materials
42.50.Pq Cavity quantum electrodynamics; micromasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nanoepitaxy of InAs/InP quantum dots by metalorganic vapor phase epitaxy for 1.55 μm emitters

J. M. Benoit, L. Le Gratiet, G. Beaudoin, A. Michon, G. Saint-Girons, R. Kuszelewicz, and I. Sagnes

Appl. Phys. Lett. 88, 041113 (2006); http://dx.doi.org/10.1063/1.2167804 (3 pages) | Cited 8 times

Online Publication Date: 24 January 2006

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We report here on the structural and optical properties of selectively grown InAs/InP quantum dots. Our approach combines electron-beam lithography, reactive ion etching, and selective low-pressure metalorganic vapor phase epitaxy, which allows the growth of nanometer-scale InAs quantum dots directly on InP substrate and an improved control of their size uniformity and density. These nanogrown InAs dots exhibit a high-efficiency photoluminescence band pointed at 1.55 μm at room temperature.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Reflection-type pulsed terahertz imaging with a phase-retrieval algorithm

Y. Ino, J. B. Héroux, T. Mukaiyama, and M. Kuwata-Gonokami

Appl. Phys. Lett. 88, 041114 (2006); http://dx.doi.org/10.1063/1.2167805 (3 pages) | Cited 6 times

Online Publication Date: 24 January 2006

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We propose and demonstrate a scheme for two-dimensional terahertz reflection imaging using a time-domain phase-retrieval algorithm based on the dispersion relations of complex reflection coefficients. With this scheme, topographic images—as well as the dielectric functions of a structured sample—can be obtained. A composite sample made of a semiconductor and metals is characterized within depth and lateral errors of 50 μm and 100 μm.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
68.35.B- Structure of clean surfaces (and surface reconstruction)
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)

Third-order nonlinearity contribution to electro-optic activity in polymer materials in a constant bias field

Nishant Prakash Bhatambrekar, Larry Dalton, Jingdong Luo, Alex K.-Y. Jen, and Antao Chen

Appl. Phys. Lett. 88, 041115 (2006); http://dx.doi.org/10.1063/1.2166198 (3 pages) | Cited 2 times

Online Publication Date: 25 January 2006

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A method is described to separately determine the contributions from the third-order nonlinearity and from the linear electro-optic (EO) effect in EO polymer system under dc biased poling conditions. An experiment was carried out using a dc biased, controlled temperature technique in a waveguide Mach-Zehnder modulator. The drive voltages of the EO device were measured at various bias voltages and temperatures. Based on these data, it is found that the modulation of the device is predominantly due to the linear EO effect and the contribution from the third-order effect was not significant when the chromophores are effectively aligned in strong bias fields and at temperatures close to the glass transition temperature of EO polymer.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.-k Nonlinear optics
78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators

Laser pulse transmission through the water breakdown plasma in laser shock peening

Benxin Wu and Yung C. Shin

Appl. Phys. Lett. 88, 041116 (2006); http://dx.doi.org/10.1063/1.2168022 (3 pages) | Cited 11 times

Online Publication Date: 25 January 2006

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Laser shock peening (LSP) under a water confinement regime can produce plasma pressures on the target surface four times higher and 2–3 times longer than that under direct regime configurations. However, when the laser power density is above some threshold, a breakdown plasma occurs in water, which screens a significant amount of the incident laser pulse and therefore limits the magnitude and duration of the pressure induced on the target surface. A self-closed numerical model that can simulate the laser pulse transmission through the breakdown plasma generated in water during LSP has rarely been reported in literature. In this work, the breakdown plasma is simulated by solving an electron rate equation coupled with a Maxwell’s wave equation. The peak irradiance and duration of the laser pulse transmitted through the breakdown plasma predicted from the model can be correlated reasonably well with experimental data for 25 ns-1064 nm laser pulses. This model is then coupled with a previously developed thermal model for LSP to calculate the pressure pulse induced on the target surface. The trend of the pressure saturation and the pressure pulse duration decrease beyond some threshold laser irradiance is captured successfully by the model, and good agreements with experimental data have been obtained under a variety of LSP conditions.
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52.38.-r Laser-plasma interactions
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.80.-s Electric discharges
52.65.-y Plasma simulation

Femtosecond time-resolved optical pump-probe spectroscopy at kilohertz-scan-rates over nanosecond-time-delays without mechanical delay line

A. Bartels, F. Hudert, C. Janke, T. Dekorsy, and K. Köhler

Appl. Phys. Lett. 88, 041117 (2006); http://dx.doi.org/10.1063/1.2167812 (3 pages) | Cited 10 times

Online Publication Date: 25 January 2006

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We demonstrate a technique for femtosecond time-resolved optical pump-probe spectroscopy that allows to scan over a nanosecond time delay at a kilohertz scan rate without mechanical delay line. Two mode-locked femtosecond lasers with approximately 1 GHz repetition rate are linked at a fixed difference frequency of ΔfR = 11 kHz. One laser delivers the pump pulses, the other provides the probe pulses. The relative time delay is linearly ramped between zero and the inverse laser repetition frequency at a rate ΔfR, enabling high-speed scanning over a 1 ns time delay. The advantages of this method for all-optical pump-probe experiments become evident in an observation of coherent acoustic phonons in a semiconductor superlattice via transient reflectivity changes. A detection shot-noise limited signal resolution of 7×10−8 is obtained with a total measurement time of 250 s. The time resolution is 230 fs.
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78.47.-p Spectroscopy of solid state dynamics
07.60.Rd Visible and ultraviolet spectrometers
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.62.Fi Laser spectroscopy
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

M. Mikulics, E. A. Michael, R. Schieder, J. Stutzki, R. Güsten, M. Marso, A. van der Hart, H. P. Bochem, H. Lüth, and P. Kordoš

Appl. Phys. Lett. 88, 041118 (2006); http://dx.doi.org/10.1063/1.2168250 (3 pages) | Cited 14 times

Online Publication Date: 26 January 2006

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We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal (MSM) contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted in an up-to-100% increase in the output power of continuously operated devices, compared to conventional MSM devices with standard surface electrodes fabricated on an identical material. The recessed electrode structure also resulted in lower saturation of output power at higher input powers, enabling it to take advantage of higher input powers.
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73.40.Sx Metal-semiconductor-metal structures
84.40.-x Radiowave and microwave (including millimeter wave) technology
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.60.-q Optoelectronic devices

Buffer-material dependence of InAs quantum dots on GaAs substrate

Hitoshi Shimizu and Shanmugam Saravanan

Appl. Phys. Lett. 88, 041119 (2006); http://dx.doi.org/10.1063/1.2168262 (3 pages) | Cited 9 times

Online Publication Date: 26 January 2006

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This letter describes the buffer-material dependence of 1.3-μm-range quantum dots (QDs), a subject that is useful for increasing the dot density while maintaining the photoluminescence (PL) intensity. Four types of buffer material, that is, GaAs, GaAsSb, InGaAs, and Si, were investigated. The PL intensity decreases monotonously with increases in the dot density for all types of buffers. The relationship between the PL intensity and the dot density is almost the same for GaAs, InGaAs, and Si buffer. However, the PL intensity increases about three times when GaAsSb buffer is used. This could be attributed to the reduction of the interfacial defects of the QDs by the surfactant behavior of Sb.
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78.55.Cr III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
68.35.Ct Interface structure and roughness

Fluidic lenses with variable focal length

Peter M. Moran, Saman Dharmatilleke, Aik Hau Khaw, Kok Wei Tan, Mei Lin Chan, and Isabel Rodriguez

Appl. Phys. Lett. 88, 041120 (2006); http://dx.doi.org/10.1063/1.2168245 (3 pages) | Cited 37 times

Online Publication Date: 26 January 2006

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We demonstrate in this letter that variable focus lenses can be realized by pressure-induced deformation of a liquid interface. Large deflections can be achieved by exploiting the capillary pressure barrier generated by high surface tension liquids at the exit of a small well. Modulation of the internal pressure of a liquid interface produces a change in its radius of curvature thus a shift in the plane of focus. Using liquids with high surface tension like water and polymeric low surface energy substrates, liquid-air lenses were realized with a wide focal length tunability (optical power for 2 mm lenses from 130 to 350 diopters). Using the liquid-liquid interface of water and a nonmiscible liquid, pressure-induced tunable lenses were also demonstrated. The application of the lenses in imaging was also shown.
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42.79.Bh Lenses, prisms and mirrors
68.03.Cd Surface tension and related phenomena

Anisotropy of domain broadening in periodically poled lithium niobate crystals

Yan Sheng, Ting Wang, Boqin Ma, E Qu, Bingying Cheng, and Daozhong Zhang

Appl. Phys. Lett. 88, 041121 (2006); http://dx.doi.org/10.1063/1.2168727 (3 pages) | Cited 11 times

Online Publication Date: 26 January 2006

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We experimentally study the dependence of reversed domain broadening of lithium niobate (LiNbO3) wafers on their poling electrode configurations. Experiments show that the reversed domain area is anisotropic and has 60° symmetry. The slightest domain broadening takes place as the poling stripe electrode parallels to the diagonals of hexagonal domain walls. We suppose the anisotropy of domain expansions is directly related to the symmetry of LiNbO3 crystal lattices, and it can be understood by considering the anisotropoic distributions of tangential component of electric field and the spontaneous polarization on domain walls.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

High performance optically pumped antimonide lasers operating in the 2.4–9.3 μm wavelength range

R. Kaspi, A. P. Ongstad, G. C. Dente, J. R. Chavez, M. L. Tilton, and D. M. Gianardi

Appl. Phys. Lett. 88, 041122 (2006); http://dx.doi.org/10.1063/1.2170423 (3 pages) | Cited 14 times

Online Publication Date: 27 January 2006

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We provide an update on the further development of optically pumped semiconductor lasers based on the InAs/InGaSb/InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the ∼ 2.4 μm to ∼ 9.3 μm range with consistently high photon-to-photon conversion rates.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Single-shot, interferometric, high-resolution, terahertz field diagnostic

K. Y. Kim, B. Yellampalle, G. Rodriguez, R. D. Averitt, A. J. Taylor, and J. H. Glownia

Appl. Phys. Lett. 88, 041123 (2006); http://dx.doi.org/10.1063/1.2168897 (3 pages) | Cited 17 times

Online Publication Date: 27 January 2006

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We present a single-shot, high-temporal-resolution terahertz diagnostic capable of measuring free-space far-infrared electromagnetic fields in time and space. We show that by using a chirped probe electro-optic sampling technique, in combination with a recently described interferometric retrieval algorithm [ Appl. Phys. Lett. 87, 211109 (2005) ], the diagnostic can provide transform-limited temporal resolution, mainly limited by the spectral bandwidth of the optical probe pulse, regardless of its chirp.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
07.60.Ly Interferometers
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
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Morphological and compositional changes in the SiO2/SiC interface region induced by oxide thermal growth

G. V. Soares, C. Radtke, I. J. R. Baumvol, and F. C. Stedile

Appl. Phys. Lett. 88, 041901 (2006); http://dx.doi.org/10.1063/1.2167608 (3 pages) | Cited 13 times

Online Publication Date: 23 January 2006

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Changes in morphology and composition of interfacial regions of thermally grown SiO2 films on SiC in dry O2 induced by reoxidations were investigated using atomic force microscopy and oxygen profiling. The gradual oxygen profile near the interface in oxides grown at 1100 °C evidences a transition region between SiO2 and SiC. Reoxidation at 950 °C leads to a decrease of the transition region thickness, while reoxidation at 1100 °C increases the transition region thickness. These results are discussed in terms of the role played by the reoxidation temperature on the formation and consumption of carbon compounds in the SiO2/SiC interface region.
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68.55.-a Thin film structure and morphology
81.65.Mq Oxidation
68.37.Ps Atomic force microscopy (AFM)
82.80.-d Chemical analysis and related physical methods of analysis

Flow-rate modulation epitaxy of wurtzite AlBN

Tetsuya Akasaka and Toshiki Makimoto

Appl. Phys. Lett. 88, 041902 (2006); http://dx.doi.org/10.1063/1.2164900 (3 pages) | Cited 4 times

Online Publication Date: 24 January 2006

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Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm-thick wurtzite Al1−xBxN (x ∼ 0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN(1math01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.
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81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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