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30 Jan 2006

Volume 88, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 051101 (2006); http://dx.doi.org/10.1063/1.2168491 (3 pages)

H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, N. Baer, and F. Jahnke
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Monolithic fiber-top sensor for critical environments and standard applications

D. Iannuzzi, S. Deladi, V. J. Gadgil, R. G. P. Sanders, H. Schreuders, and M. C. Elwenspoek

Appl. Phys. Lett. 88, 053501 (2006); http://dx.doi.org/10.1063/1.2170139 (3 pages) | Cited 23 times

Online Publication Date: 30 January 2006

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We present a monolithic device obtained by carving a cantilever on the top of a single-mode optical fiber. We show that the vertical position of the cantilever can be determined with accuracy comparable to atomic force microscopes and other commonly used scientific instruments. The device does not require any alignment procedure and can be used in critical environments as well as in standard applications.
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42.81.Pa Sensors, gyros

Fermi-level pinning at conjugated polymer interfaces

Carl Tengstedt, Wojciech Osikowicz, William R. Salaneck, Ian D. Parker, Che-H. Hsu, and Mats Fahlman

Appl. Phys. Lett. 88, 053502 (2006); http://dx.doi.org/10.1063/1.2168515 (3 pages) | Cited 123 times

Online Publication Date: 1 February 2006

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Photoelectron spectroscopy has been used to map out energy level alignment of conjugated polymers at various organic-organic and hybrid interfaces. Specifically, we have investigated the hole-injection interface between the substrate and light-emitting polymer. Two different alignment regimes have been observed: (i) Vacuum-level alignment, which corresponds to the lack of vacuum-level offsets (Schottky–Mott limit) and (ii) Fermi-level pinning, where the substrate Fermi level and the positive polaronic level of the polymer align. The observation is rationalized in terms of spontaneous charge transfer whenever the substrate Fermi level exceeds the positive polaron/bipolaron formation energy per particle. The charge transfer leads to the formation of an interfacial dipole, as large as 2.1 eV.
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71.20.Rv Polymers and organic compounds
73.20.At Surface states, band structure, electron density of states
42.70.Jk Polymers and organics
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
78.60.Fi Electroluminescence
71.38.Mx Bipolarons

Ordered-mesoporous-silica-thin-film-based chemical gas sensors with integrated optical polarimetric interferometry

Zhi-mei Qi, Itaru Honma, and Haoshen Zhou

Appl. Phys. Lett. 88, 053503 (2006); http://dx.doi.org/10.1063/1.2171490 (3 pages) | Cited 12 times

Online Publication Date: 2 February 2006

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A technology to make integrated optical chemical gas sensors using sol-gel surfactant-templated mesoporous thin films was demonstrated. The sensor was prepared by dip coating of an ordered mesoporous silica thin film onto a tapered thin TiO2 layer sputtered on top of a tin-diffused glass waveguide. The sensor employs single-beam polarimetric interferometry to detect molecular adsorption in the mesoporous silica film because the adsorption can lead to a change of the phase difference ϕ) between the fundamental transverse electric (TE0) and magnetic (TM0) modes propagating in the waveguide. The sensor is sensitive to humidity and NH3 gas at room temperature (RT). The sensitivity of Δϕ>180° was detected for 40 min exposure of the sensor to 2 ppm of NH3 in dry air. The sensor was recoverable from the HN3 exposure but its recovery was too slow to cause a detectable Δϕ per unit time. The slow response and recovery of the sensor were ascribed to slow diffusion of gaseous molecules in the laterally oriented tube-like pores of the silica film.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.82.Et Waveguides, couplers, and arrays
07.60.Fs Polarimeters and ellipsometers
07.60.Ly Interferometers
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.43.Mn Adsorption kinetics
42.79.Gn Optical waveguides and couplers

Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers

R. A. Bardos, T. Trupke, M. C. Schubert, and T. Roth

Appl. Phys. Lett. 88, 053504 (2006); http://dx.doi.org/10.1063/1.2165274 (3 pages) | Cited 17 times

Online Publication Date: 3 February 2006

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Photoluminescence and photoconductance lifetime measurements on multicrystalline silicon wafers are presented. It is demonstrated experimentally that the large overestimation of the lifetime at low carrier concentrations due to trapping that is observed in photoconductance measurements is not found in photoluminescence data. This is explained theoretically by the dependence of photoluminescence and photoconductance on the product and the sum, respectively, of the minority and majority carrier densities. Based on this analysis, it is shown that photoluminescence lifetime measurements are not significantly affected by minority carrier trapping in most practical cases while implied current-voltage curves obtained from photoluminescence are completely unaffected.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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