APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

30 Jan 2006

Volume 88, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 051101 (2006); http://dx.doi.org/10.1063/1.2168491 (3 pages)

H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, N. Baer, and F. Jahnke
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Molecular content of the deposition flux during reactive Ar/O2 magnetron sputtering of Al

Jon M. Andersson, E. Wallin, E. P. Münger, and U. Helmersson

Appl. Phys. Lett. 88, 054101 (2006); http://dx.doi.org/10.1063/1.2170404 (3 pages) | Cited 6 times

Online Publication Date: 30 January 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The deposition flux obtained during reactive radio frequency magnetron sputtering of an Al target in Ar/O2 gas mixtures was studied by mass spectrometry. The results show significant amounts of molecular AlO+ (up to 10% of the Al+ flux) in the ionic flux incident onto the substrate. In the presence of ∼ 10−4 Pa H2O additional OH+ and AlOH+ were detected, amounting to up to about 100% and 30% of the Al+ flux, respectively. Since the ions represent a small fraction of the total deposition flux, an estimation of the neutral content was also made. These calculations show that, due to the higher ionization probability of Al, the amount of neutral AlO in the deposition flux is of the order of, or even higher than, the amount of Al. These findings might be of great aid when explaining the alumina thin film growth process.
Show PACS
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Cd Deposition by sputtering

Acoustic mixing at low Reynold’s numbers

K. Sritharan, C. J. Strobl, M. F. Schneider, A. Wixforth, and Z. Guttenberg

Appl. Phys. Lett. 88, 054102 (2006); http://dx.doi.org/10.1063/1.2171482 (3 pages) | Cited 65 times

Online Publication Date: 2 February 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In microfluidic devices, hydrodynamic flow is usually governed by very low Reynold’s numbers. Under these conditions, only laminar flow is possible. Hence, mixing in microfluidics occurs by diffusion only. Interaction of small fluid volumes and acoustic waves in a solid leads to pronounced streaming effects in the fluid inducing mixing and stirring even at low Reynold’s numbers. We demonstrate the applicability of such acoustically induced mixing in a variety of different microfluidic geometries, including planar and conventional three-dimensional microfluidic devices.
Show PACS
47.85.Np Fluidics
47.51.+a Mixing
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
47.60.-i Flow phenomena in quasi-one-dimensional systems
47.15.G- Low-Reynolds-number (creeping) flows
47.35.Rs Sound waves
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close