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30 Jan 2006

Volume 88, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 88, 051101 (2006); http://dx.doi.org/10.1063/1.2168491 (3 pages)

H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, N. Baer, and F. Jahnke
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Confined optical modes in monolithic II-VI pillar microcavities

H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, N. Baer, and F. Jahnke

Appl. Phys. Lett. 88, 051101 (2006); http://dx.doi.org/10.1063/1.2168491 (3 pages) | Cited 30 times

Online Publication Date: 30 January 2006

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Monolithic II-VI pillar microcavities made of ZnSSe and MgS/ZnCdSe supperlattices have been fabricated by molecular-beam epitaxy and focused-ion-beam etching. Discrete optical modes of the pillar microcavities are studied in photoluminescence measurements. The optical modes are identified by means of calculations based on an extended transfer matrix method. Achievable Purcell factors well above 10 can be estimated from the measured quality factors and calculated mode volumes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors

Large electric field effects on photoluminescence of organic Eu3+ complex-based electroluminescent emitters

D. Virgili, M. Cocchi, V. Fattori, J. Kalinowski, and W. Stampor

Appl. Phys. Lett. 88, 051102 (2006); http://dx.doi.org/10.1063/1.2168508 (3 pages) | Cited 4 times

Online Publication Date: 30 January 2006

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Electric field applied to indium-tin oxide (ITO)/organic layer/Au thin-film structure has been shown to strongly (up to 40%) reduce the photoluminescence (PL) of organic films composed of Eu3+ complexes-doped diamine derivative (TPD): Polycarbonate thin layers used as red light electroluminescent emitters. Two components of this effect can be extracted from the experiment: (i) electric-field enhanced dissociation of excited states, and (ii) quenching of excited states due to the injected charge. While component (i) reduces PL irrespective of the nature of electrode contacts, the negative values of component (ii) have been observed for some emitters with ITO/organic emitter/Au structures, tending to an enhancement of the PL. The latter is assigned to the recombination of holes generated by the thermionic emission from ITO (Au) anode and electrons created by exciton reactions at Au (ITO) cathode. The strong PL quenching effects have been attributed to the field increasing occupation of ligands by electrons, competing with excitation energy transfer to them from TPD, the latter being the process responsible for the population of emissive Eu3+ ion states.
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85.60.Jb Light-emitting devices

High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers

Y. Q. Wei, J. S. Gustavsson, Å. Haglund, P. Modh, M. Sadeghi, S. M. Wang, and A. Larsson

Appl. Phys. Lett. 88, 051103 (2006); http://dx.doi.org/10.1063/1.2170430 (3 pages) | Cited 9 times

Online Publication Date: 30 January 2006

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We have studied the modulation bandwidth of high-speed GaInNAs double-quantum-well lasers emitting at 1.28–1.30 μm. A 400 μm long ridge waveguide laser exhibits a small signal modulation bandwidth of 14 GHz. The intrinsic damping limited modulation bandwidth is as high as 25 GHz (K = 0.35 ns), and the actual modulation bandwidth is limited by thermal effects under continuous operation. The saturation of the resonance frequency at 10 GHz was found to be the result of a thermal reduction of the differential gain and a rapid increase of the threshold current when the temperature exceeds 80 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Carrier-to-noise ratio enhancement of super-resolution near-field structure disks by Ag nanostructure

T. Arai, K. Kurihara, T. Nakano, J. Tominaga, and C. Rockstuhl

Appl. Phys. Lett. 88, 051104 (2006); http://dx.doi.org/10.1063/1.2172017 (3 pages) | Cited 8 times

Online Publication Date: 31 January 2006

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The recording and retrieval characteristics of super-resolution near-field structure disks have been evaluated before and after the fabrication of a Ag-nanostructured film on the top dielectric layer, using a 405 nm wavelength laser and a 0.65 numerical aperture lens system. The carrier-to-noise ratio for 100 nm mark signals is significantly improved by applying the Ag-nanostructured film. The underlying mechanism for the enhancement depends on the top dielectric layer thickness. A simulation based on Mie theory shows good agreement with the measured reflectance spectrum for the Ag-nanostructured film.
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78.66.Bz Metals and metallic alloys
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.79.Wc Optical coatings
81.16.Mk Laser-assisted deposition

Quantum-cascade lasers operating in continuous-wave mode above 90 °C at λ ∼ 5.25 μm

A. Evans, J. Nguyen, S. Slivken, J. S. Yu, S. R. Darvish, and M. Razeghi

Appl. Phys. Lett. 88, 051105 (2006); http://dx.doi.org/10.1063/1.2171476 (3 pages) | Cited 21 times

Online Publication Date: 31 January 2006

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We report on the design and fabrication of λ ∼ 5.25 μm quantum-cascade lasers (QCLs) for very high temperature continuous-wave (cw) operation. Cw operation is reported up to a maximum temperature of 90 °C (363 K). Cw output power is reported in excess of 500 mW near room temperature with a low threshold current density of 1.4 kA/cm2 at 298 K. Room temperature average power of over 540 mW is reported at 50% duty cycle. A high thermal conductance (Gth) of 340 W/K cm2 is reported for cw QCLs. A finite element thermal model is used to investigate the Gth and maximum cw operating temperature of the QCLs.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Encapsulation for efficient electrical injection of photonic crystal defect mode surface-emitting lasers

Weidong Zhou

Appl. Phys. Lett. 88, 051106 (2006); http://dx.doi.org/10.1063/1.2171483 (3 pages) | Cited 2 times

Online Publication Date: 31 January 2006

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We propose and report an encapsulated photonic crystal concept for efficient electrical injection of photonic crystal surface-emitting lasers. Detailed rate equation analysis reveals a significant threshold current reduction by minimizing the surface-state-induced carrier loss. The impact of encapsulation on the photonic band gap is discussed for different encapsulation conditions. Experimental results on encapsulation process are reported, based on nanoparticle self-assembly.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Tv Photonic crystal lasers and coherent effects
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials
81.16.Dn Self-assembly

InSb/AlInSb quantum-well light-emitting diodes

G. R. Nash, M. K. Haigh, H. R. Hardaway, L. Buckle, A. D. Andreev, N. T. Gordon, S. J. Smith, M. T. Emeny, and T. Ashley

Appl. Phys. Lett. 88, 051107 (2006); http://dx.doi.org/10.1063/1.2171647 (3 pages) | Cited 16 times

Online Publication Date: 31 January 2006

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We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1−xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications

E. Feltin, J.-F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean

Appl. Phys. Lett. 88, 051108 (2006); http://dx.doi.org/10.1063/1.2167399 (3 pages) | Cited 36 times

Online Publication Date: 31 January 2006

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We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structural degradations. The appearance of cracks was then completely suppressed. The DBRs exhibit a reflectivity higher than 99% at a wavelength as short as ∼ 340 nm and a stop band width of 215 meV (20 nm).
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42.79.Bh Lenses, prisms and mirrors
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.05.Ea III-V semiconductors

Emission of light through thin silver films via near-field coupling to surface plasmon polaritons

G. Winter and W. L. Barnes

Appl. Phys. Lett. 88, 051109 (2006); http://dx.doi.org/10.1063/1.2170426 (3 pages) | Cited 23 times

Online Publication Date: 1 February 2006

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We show that the emission of light from a dye layer through an adjacent thin silver film is maximal for a silver thickness of approximately 50 nm. This effect is explained as the result of competition between enhancement of the electric field at the metal surface due to the excitation of a surface plasmon-polariton mode, the amount of power coupled to the surface plasmon-polariton mode, and the attenuation of the field transmitted through the silver, all three of which vary with metal thickness. We indicate how these findings may be of relevance in the design of some surface plasmon-polariton-based fluorescence biosensing schemes.
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78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.70.-a Optical materials

Organic photocouplers consisting of organic light-emitting diodes and organic photoresistors

Guifang Dong, Yan Hu, Chongyun Jiang, Liduo Wang, and Yong Qiu

Appl. Phys. Lett. 88, 051110 (2006); http://dx.doi.org/10.1063/1.2171480 (3 pages) | Cited 11 times

Online Publication Date: 1 February 2006

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We have fabricated one kind of organic photocoupler with organic light-emitting diode as the input unit and pentacene photoresistor as the output unit. The wavelength of the emitting light was 522 nm. The output current of the photocoupler linearly increased with its input current and the ratio of the transfer current density reached 3. When the output voltages were 60 V, the ratio of the maximum output current to the minimum output current was 150. The breakdown voltage between the input unit and the output unit was more than 10 kV and the response time of the device was about 6.5 s. We believe this kind of device is promising in the full organic optoelectronic integrated circuits.
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42.82.Et Waveguides, couplers, and arrays
85.60.Jb Light-emitting devices
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Gn Optical waveguides and couplers

cw and tunable laser operation of Yb3+ in Nd:Yb:CaF2

V. Petit, P. Camy, J.-L. Doualan, and R. Moncorgé

Appl. Phys. Lett. 88, 051111 (2006); http://dx.doi.org/10.1063/1.2169887 (3 pages) | Cited 11 times

Online Publication Date: 1 February 2006

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We report here the spectroscopy and the cw and tunable laser operation of Yb3+ in a CaF2 single crystal codoped with Nd3+ and Yb3+ ions. Laser emission is obtained between 1030 and 1055 nm after pumping into the Nd3+ ions around 795 nm and efficient Nd3+→Yb3+ energy transfers. The efficiency of the energy transfers is attributed to the particular Nd3+–Yb3+ clusters formed in CaF2 because of charge compensation.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Near-field spectroscopy of low-loss waveguide integrated microcavities

B. Cluzel, E. Picard, T. Charvolin, E. Hadji, L. Lalouät, F. de Fornel, C. Sauvan, and P. Lalanne

Appl. Phys. Lett. 88, 051112 (2006); http://dx.doi.org/10.1063/1.2170141 (3 pages) | Cited 8 times

Online Publication Date: 1 February 2006

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A scanning near-field spectroscopy method is used to observe loss reduction and Q-factor enhancement due to transverse-mode profile matching within photonic-crystal microcavities. Near-field measurements performed directly on cavity modes are compared with three-dimensional calculations and quantitative agreement is observed.
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42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers

Control of polarized single quantum dot emission in high-quality-factor microcavity pillars

A. Daraei, A. Tahraoui, D. Sanvitto, J. A. Timpson, P. W. Fry, M. Hopkinson, P. S. S. Guimarães, H. Vinck, D. M. Whittaker, M. S. Skolnick, and A. M. Fox

Appl. Phys. Lett. 88, 051113 (2006); http://dx.doi.org/10.1063/1.2171803 (3 pages) | Cited 15 times

Online Publication Date: 2 February 2006

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Small size microcavity pillars with elliptical cross section and high quality factors Q are reported and are shown to provide nearly 100% linearly polarized single photon sources. It is shown that the polarization of the emission of quantum dots embedded within the pillars can be controlled by using the coupling of the dot emission with the photonic modes. A notable dependence of the Q value is found on the polarization of the mode even though calculations of the mode profiles show that the electric field distribution is very similar.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
42.72.-g Optical sources and standards

Domain pinning in GaAs/AlGaAs quantum well infrared photodetectors

H. Schneider, C. Schönbein, R. Rehm, M. Walther, and P. Koidl

Appl. Phys. Lett. 88, 051114 (2006); http://dx.doi.org/10.1063/1.2171767 (3 pages) | Cited 8 times

Online Publication Date: 2 February 2006

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We have analyzed the spatial distribution of electric field domains induced by negative differential photoconductivity in n-type GaAs/AlGaAs quantum well infrared photodetectors. We find strong evidence of two different domain configurations, with the high-field domain and the low-field domain, respectively, adjacent to the emitter contact. A distinctive signature of these domain configurations is provided by the observed total current, which is observed to be close to either the valley current or the peak current. We also discuss the emergence of the two configurations.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.07.St Quantum wells

Long wavelength emission of InGaAsN/GaAsSb type II “W” quantum wells

J.-Y. Yeh, L. J. Mawst, A. A. Khandekar, T. F. Kuech, I. Vurgaftman, J. R. Meyer, and N. Tansu

Appl. Phys. Lett. 88, 051115 (2006); http://dx.doi.org/10.1063/1.2171486 (3 pages) | Cited 11 times

Online Publication Date: 2 February 2006

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Low temperature (30 K) long wavelength photoluminescence emission (λ = 1400–1600 nm) from metalorganic chemical vapor deposition grown InGaAsN–GaAsSb type II “W” quantum wells (QWs), on GaAs substrates has been demonstrated. Thin layers (2–3 nm) and high antimony-content (30%) GaAsSb were utilized in this study for realizing satisfactory wave function overlap and long wavelength emission. Tensile strained GaAsP barriers effectively improve the material structural and luminescence properties of the compressive strained active region. Room temperature photoluminescence data show that the type-II QW design is a promising candidate for realizing long wavelength GaAs-based diode lasers beyond 1500 nm.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.Fg Quantum wells

High-efficiency blue light-emitting electrophosphorescent device with conjugated polymers as the host

Xiuju Zhang, Changyun Jiang, Yueqi Mo, Yunhua Xu, Huahong Shi, and Yong Cao

Appl. Phys. Lett. 88, 051116 (2006); http://dx.doi.org/10.1063/1.2167788 (3 pages) | Cited 25 times

Online Publication Date: 2 February 2006

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Highly efficient blue polymer phosphorescent organic light-emitting diode (PPHOLED)-containing iridium(III) bis (2,4-difluorophenyl-2-pyridine) (2-(4H-1, 2, 4-triazol-3-yl)pyridine) [Ir(PPF)2(PZ)] complex embedded into wide-gap poly (9,9′-alkyl-3, 6-silafluorene) (PSiFC6C6) has been fabricated. Despite the significant quenching of photophosphorescence emission of the iridium complexes by a PSiFC6C6 host polymer, organic light-emitting diodes containing Ir(PPF)2(PZ) doped into the polymer host PSiFC6C6 emit high-efficiency blue light peaked at 462 nm. The maximal external quantum and luminance efficiencies were, respectively, 4.8% photons/electrons and 7.2 cd/A at 644 cd/m2 and with Commission Internationale de l’Eclairage coordinates of (0.15,0.26).
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85.60.Jb Light-emitting devices

Quantum-well infrared photodetector with voltage-switchable quadratic and linear response

Thomas Maier, Harald Schneider, H. C. Liu, Martin Walther, and Peter Koidl

Appl. Phys. Lett. 88, 051117 (2006); http://dx.doi.org/10.1063/1.2168248 (3 pages) | Cited 5 times

Online Publication Date: 3 February 2006

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We present a quantum-well infrared photodetector that allows us to switch between a quadratic and a linear detection mode. We employ an asymmetric detector design where intersubband transitions in a three-level system give rise to a quadratic power dependence down to very low excitation densities. Upon reversing the bias voltage, however, the intermediate subband acts as the ejection channel due to highly efficient tunneling, thus leading to a two-level system with linear photoresponse.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Sub-200-fs pulsed erbium-doped fiber laser using a carbon nanotube-polyvinylalcohol mode locker

Aleksey G. Rozhin, Youichi Sakakibara, Shu Namiki, Madoka Tokumoto, Hiromichi Kataura, and Yohji Achiba

Appl. Phys. Lett. 88, 051118 (2006); http://dx.doi.org/10.1063/1.2172398 (3 pages) | Cited 52 times

Online Publication Date: 3 February 2006

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We study the difference in mode-locked operations of different saturable absorber films made of single wall carbon nanotube-polyvinylalcohol nanocomposite. The films have different nanotube concentrations and thicknesses. For the study, a mode-locked erbium-doped fiber laser in a ring cavity configuration was constructed by setting the films in a microgap between a pair of fiber end facets. With the optimum film among those we have tested, the shortest pulses with a width of 178 fs were achieved at 1.56 μm with a repetition rate of 22.8 MHz and an average power of 1.55 mW.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Long-range surface plasmon-polariton mode cutoff and radiation

Ian Breukelaar, Robert Charbonneau, and Pierre Berini

Appl. Phys. Lett. 88, 051119 (2006); http://dx.doi.org/10.1063/1.2172727 (3 pages) | Cited 14 times

Online Publication Date: 3 February 2006

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Using a fully vectorial formulation, the normal mode analysis method is used to model the radiative spreading of surface plasmon-polariton modes input into regions where the bound surface mode is cutoff, or radiative. The analysis was performed at λ0 = 1.55 μm for embedded finite-width metal waveguides where the metal was Au and the surrounding dielectric was SiO2. Mode cutoff is induced by an asymmetry between the index of refraction of the top clad and the bottom clad. Results show that a change in insertion loss of better than 20 dB is possible for an appropriate waveguide and dielectric asymmetry. Comparisons between predictions and experimental results show very good agreement.
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78.68.+m Optical properties of surfaces
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Gn Optical waveguides and couplers
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Photorefractive effect in iron-doped lithium niobate crystals induced by femtosecond pulses of 1.5 μm wavelength

O. Beyer, I. Breunig, F. Kalkum, and K. Buse

Appl. Phys. Lett. 88, 051120 (2006); http://dx.doi.org/10.1063/1.2170434 (3 pages) | Cited 17 times

Online Publication Date: 3 February 2006

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Illumination of iron-doped lithium crystals (LiNbO3:Fe) with femtosecond pulses of 1.5 μm wavelength results in large refractive index changes Δn in the order of 10−3. The sign of the refractive index changes depends on the polarization of the recording light. The results can be very useful for fabrication of tailored holographic components for telecommunication.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Gi Light-sensitive materials
42.70.Ln Holographic recording materials; optical storage media
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Holographically formed Bragg reflection gratings recorded in polymer-dispersed Liquid crystal cells using a He-Ne laser

Robert A. Ramsey, Suresh C. Sharma, and Kalpesh Vaghela

Appl. Phys. Lett. 88, 051121 (2006); http://dx.doi.org/10.1063/1.2168707 (3 pages) | Cited 7 times

Online Publication Date: 3 February 2006

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Bragg reflection gratings are holographically recorded in polymer-dispersed liquid crystal materials by using the 632.8-nm wavelength of the He-Ne laser. Mixtures of the commercially available E8 nematic liquid crystal, pentafunctional monomers, and photooxidant dye methylene blue are employed. We demonstrate that Bragg reflection gratings can be formed in this acrylate photopolymer system with reflection efficiencies of 52% with a peak notch at 1165 nm. We also present results for the switching characteristics of these gratings with switching fields on the order of 6 MV/m and rise times of 62 μs.
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42.40.Eq Holographic optical elements; holographic gratings
42.79.Dj Gratings
42.70.Df Liquid crystals
42.70.Jk Polymers and organics
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