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30 Jan 2006

Volume 88, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 051101 (2006); http://dx.doi.org/10.1063/1.2168491 (3 pages)

H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, N. Baer, and F. Jahnke
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Effects of substrate curvature on the adsorption of poly(3-hexylthiophene) on single-walled carbon nanotubes

Roland G. S. Goh, Nunzio Motta, John M. Bell, and Eric R. Waclawik

Appl. Phys. Lett. 88, 053101 (2006); http://dx.doi.org/10.1063/1.2168514 (3 pages) | Cited 13 times

Online Publication Date: 30 January 2006

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A detailed study of poly(alkylthiophene) self-assembly and organization on single-walled carbon nanotubes (SWNTs) is presented. Monolayers of regioregular poly(3-hexyl thiophene) (rrP3HT) adsorbed on SWNTs have been imaged by using scanning tunneling microscopy. Our results show that the rrP3HT interchain distance is greater for rrP3HT monolayers adsorbed onto the curved surfaces of SWNTs than on the flat surfaces of highly ordered pyrolytic graphite samples. Comparisons between the native polymer deposited on graphite and the composite structure confirmed that the presence of carbon nanotubes in rrP3HT produces a new material with a high degree of order at the molecular level.
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81.05.Qk Reinforced polymers and polymer-based composites
81.05.ub Fullerenes and related materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
68.43.Mn Adsorption kinetics
81.16.Dn Self-assembly

GaN quantum dots doped with Tb

Y. Hori, T. Andreev, D. Jalabert, E. Monroy, Le Si Dang, B. Daudin, M. Tanaka, and O. Oda

Appl. Phys. Lett. 88, 053102 (2006); http://dx.doi.org/10.1063/1.2168504 (3 pages) | Cited 10 times

Online Publication Date: 30 January 2006

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Tb-doped GaN quantum dots grown by molecular beam epitaxy have been studied. These nanostructures present intense photoluminescence from intra-4f transitions of Tb3+ ions. It has been found that Tb atoms enhance the desorption process of Ga adatoms from the growing surface, leading to a reduction of the growth rate and, eventually, to an inhibition of the GaN quantum dot formation for a Tb content of about 2% at the growth temperature of 760 °C. The presence of Tb inside quantum dots is suggested by intense photoluminescence in the green spectral range at room temperature from intra-4f transitions of Tb3+ ions, by contrast to the Tb-doped GaN thick layers.
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78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
68.43.Mn Adsorption kinetics

Pore size dependence of field emission from nanoscale porous carbon

M. Ojima, S. Hiwatashi, H. Araki, A. Fujii, M. Ozaki, and K. Yoshino

Appl. Phys. Lett. 88, 053103 (2006); http://dx.doi.org/10.1063/1.2170436 (3 pages) | Cited 2 times

Online Publication Date: 30 January 2006

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Carbon inverse opals with three-dimensional nanoporous structures are fabricated by a template method using synthetic opals formed by the sedimentation of SiO2 spheres. The pore size of the carbon inverse opals ranges widely from about 74 nm to 550 nm depending on the diameter of the SiO2 spheres. These nanoporous structures of carbon exhibit excellent characteristics as electron emitters. As the pore size of porous carbon decreases, the effective emission area of field emission increases. The main emitter sites of porous carbon are interpreted to be the edges formed in the boundary of the neighboring pores. The emission characteristics have drastically improved upon heat treatment at high temperatures (about 2760 °C).
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79.70.+q Field emission, ionization, evaporation, and desorption
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials

In situ synthesis and nonlinear optical properties of Au:Ag nanocomposite polymer films

B. Karthikeyan, M. Anija, and Reji Philip

Appl. Phys. Lett. 88, 053104 (2006); http://dx.doi.org/10.1063/1.2168667 (3 pages) | Cited 38 times

Online Publication Date: 30 January 2006

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We report a simple in situ synthesis procedure for Au:Ag nanocomposite polymer (NCP) films using polyvinyl alcohol as the reducing agent. Optical measurements show absorption bands of varying strengths around 530 and 410 nm. The presence of nanoparticles is confirmed from Transmission Electron Microscopy (TEM). Nonlinear optical response is studied using 7 ns laser pulses, for near-resonant and off-resonant excitation wavelengths (532 and 1064 nm, respectively). Samples exhibit saturable as well as induced absorption. These materials have the potential to be used as saturable absorbers and optical limiters.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.-w Optical properties of specific thin films
81.16.-c Methods of micro- and nanofabrication and processing
78.40.-q Absorption and reflection spectra: visible and ultraviolet
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Two-dimensional nanotriangle and nanoring arrays on silicon wafer

Dongdong Jia and Anura Goonewardene

Appl. Phys. Lett. 88, 053105 (2006); http://dx.doi.org/10.1063/1.2168938 (3 pages) | Cited 9 times

Online Publication Date: 30 January 2006

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Gold and tungsten were deposited on silicon wafer and/or glass substrates by using random incidence sputtering deposition and thermal vapor deposition techniques. Two-dimensional tungsten nanotriangle and gold nanoring arrays were obtained on the silicon wafer substrate and examined using scanning electron microscope and atomic force microscope analysis. The size of the equal tungsten nanotriangles is within 100 nm per side and 210 nm apart from each other. The size of gold nanorings is 220 nm diameter, 40 nm wide, 10 nm thick, and 560 nm apart from each other. No nanorings were found on the glass substrate. Mechanisms for the formation of nanoring arrays are discussed.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.15.Cd Deposition by sputtering
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Ps Atomic force microscopy (AFM)

Specific contact resistivity of nanowire devices

E. Stern, G. Cheng, M. P. Young, and M. A. Reed

Appl. Phys. Lett. 88, 053106 (2006); http://dx.doi.org/10.1063/1.2163454 (3 pages) | Cited 20 times

Online Publication Date: 30 January 2006

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We present a study of specific contact resistivity from multiterminal Kelvin measurements for GaN nanowire (NW) devices. Nanowire specific contact resistivity is found to be process-independent and in good agreement to that of epitaxially grown GaN. A strong dependence of NW specific contact resistivity on carrier density is observed to be in good agreement with theory.
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85.35.-p Nanoelectronic devices
85.30.-z Semiconductor devices
73.40.Cg Contact resistance, contact potential

Nonlinear characteristics of the Fowler–Nordheim plot for field emission from In2O3 nanowires grown on InAs substrate

S. Q. Li, Y. X. Liang, and T. H. Wang

Appl. Phys. Lett. 88, 053107 (2006); http://dx.doi.org/10.1063/1.2159092 (3 pages) | Cited 21 times

Online Publication Date: 31 January 2006

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Nonlinear characteristics of the Fowler–Nordheim (F–N) plot for field emission from In2O3 nanowires (NWs) is investigated. The field emission from the aligned and nonaligned In2O3 NWs are measured and a stable emission with fluctuations less than 10% was obtained for the aligned In2O3 NWs. It is found that the nonaligned In2O3 NWs with a longer length have higher turn-on and threshold electric fields. Their F–N plots, showing pronounced nonlinear characteristics, are divided into several regions based on physical origins. Field penetration competes with surface states in influencing the field emission of the In2O3 NWs with increasing the electric field, which is responsible for the nonlinear characteristics of the F–N plots.
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81.07.Bc Nanocrystalline materials
73.22.-f Electronic structure of nanoscale materials and related systems
79.70.+q Field emission, ionization, evaporation, and desorption

Membrane folding to achieve three-dimensional nanostructures: Nanopatterned silicon nitride folded with stressed chromium hinges

William J. Arora, Anthony J. Nichol, Henry I. Smith, and George Barbastathis

Appl. Phys. Lett. 88, 053108 (2006); http://dx.doi.org/10.1063/1.2168516 (3 pages) | Cited 27 times

Online Publication Date: 31 January 2006

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Silicon nitride membranes were nanopatterned and then folded into three-dimensional (3D) configurations. The out-of-plane folding was achieved using stressed metal hinges. The concept of folding nanopatterned membranes into 3D shapes is referred to as nanostructured origami because of the similarity to the Japanese paper-art of origami, in which two-dimensional surfaces are folded into volumetric shapes. The stressed metal hinges were modeled analytically and compared to experiment. Experimental results demonstrated controllable folding of nanopatterned silicon nitride membranes.
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81.07.Bc Nanocrystalline materials
81.16.Rf Micro- and nanoscale pattern formation
61.46.-w Structure of nanoscale materials

Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements

Jun-Qiang Lu, H. T. Johnson, V. D. Dasika, and R. S. Goldman

Appl. Phys. Lett. 88, 053109 (2006); http://dx.doi.org/10.1063/1.2171473 (3 pages) | Cited 6 times

Online Publication Date: 31 January 2006

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Local electronic properties of InAs/GaAs nanostructures are studied using a real-space moments method sp3d5s* tight-binding approach. The order (N) method is unique because it allows for accurate and highly resolved determination of local density of states that accounts for local strain, disorder, and defects, without diagonalization of the full tight-binding Hamiltonian. The effects of free surfaces and strain are first investigated by considering pure, cuboidal GaAs nanostructures. The quantum confinement in an embedded InAs quantum dot is then shown directly through the local densities of states projected on different atoms in the structure. The relationship between effective energy band gap and quantum dot size is mapped onto a simple equation. Finally, the real-space study is applied to quantum dot structures observed experimentally using scanning tunneling microscopy. Atomic positions are obtained from the images and used as input into the tight-binding calculations in order to study interfacial effects on the local electronic structure of real embedded quantum dots.
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71.20.Nr Semiconductor compounds
73.21.La Quantum dots
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

Catalyst-free pulsed-laser-deposited ZnO nanorods and their room-temperature photoluminescence properties

Z. W. Liu, C. K. Ong, T. Yu, and Z. X. Shen

Appl. Phys. Lett. 88, 053110 (2006); http://dx.doi.org/10.1063/1.2168675 (3 pages) | Cited 36 times

Online Publication Date: 31 January 2006

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ZnO nanorods with various diameters were synthesized on both sapphire and silicon substrates by a pulsed-laser-deposition technique without a catalyst using relatively high background oxygen pressure (5–20 Torr) and substrate temperature (550 °C-700 °C). The photoluminescence (PL) properties of the nanorods were investigated. The difference in PL emission intensity for the samples produced at various oxygen pressures has been attributed to the size difference and surface status of the nanorods. The increased deep level emission with increasing temperature resulted from the size difference and increasing oxygen evaporating. The effect of substrate nature on the PL property has also been investigated.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
81.16.Mk Laser-assisted deposition
81.15.Fg Pulsed laser ablation deposition
61.46.Hk Nanocrystals
78.55.Et II-VI semiconductors

Ni-dispersed fullerenes: Hydrogen storage and desorption properties

Weon Ho Shin, Seong Ho Yang, William A. Goddard, and Jeung Ku Kang

Appl. Phys. Lett. 88, 053111 (2006); http://dx.doi.org/10.1063/1.2168775 (3 pages) | Cited 21 times

Online Publication Date: 31 January 2006

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Our study shows that the H2 storage media using Ni-dispersed fullerenes could be viable alternatives to reversible hydrogen storage. It is demonstrated that a single Ni coated on the fullerene surface can store up to three H2 molecules. Consequently, at high Ni coverage, Ni-dispersed fullerenes are considered to be the novel hydrogen storage media capable of storing ∼ 6.8 wt % H2, thus exceeding the Department of Energy target (6.5 wt %) for automobile applications. Moreover, the H2 desorption activation barrier of 11.8 kcal/mol H2 is ideal for many practical hydrogen storage applications.
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84.60.-h Direct energy conversion and storage
68.43.Mn Adsorption kinetics
81.65.-b Surface treatments

Photosynthesis and characterization of Prussian blue nanocubes on surfaces of TiO2 colloids

Yan-Yan Song, Ke Zhang, and Xing-Hua Xia

Appl. Phys. Lett. 88, 053112 (2006); http://dx.doi.org/10.1063/1.2169909 (3 pages) | Cited 11 times

Online Publication Date: 31 January 2006

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Prussian blue (PB) nanocubes were synthesized on the surface of titania (TiO2) colloids using two-step process with ultraviolet light illumination. The formation of PB nanocubes starts with its nucleation under strong ultraviolet light illumination and followed by a slow growth of the nuclei under low intensity natural light illumination. This kind of PB nanocube has a very low Curie temperature.
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82.50.Hp Processes caused by visible and UV light
61.46.-w Structure of nanoscale materials
82.70.Dd Colloids
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy

U. Neuhäusler, A. Oelsner, J. Slieh, M. Brzeska, A. Wonisch, T. Westerwalbesloh, H. Brückl, M. Schicketanz, N. Weber, M. Escher, M. Merkel, G. Schönhense, U. Kleineberg, and U. Heinzmann

Appl. Phys. Lett. 88, 053113 (2006); http://dx.doi.org/10.1063/1.2168263 (3 pages) | Cited 3 times

Online Publication Date: 1 February 2006

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We report on the development and first experimental results of a “at wavelength” full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than 5×10−3 defects per cm2 should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
81.70.Fy Nondestructive testing: optical methods

Semiconducting single-walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculation

Ming-Pei Lu, Cheng-Yun Hsiao, Po-Yuan Lo, Jeng-Hua Wei, Yuh-Shyong Yang, and Ming-Jer Chen

Appl. Phys. Lett. 88, 053114 (2006); http://dx.doi.org/10.1063/1.2172014 (3 pages) | Cited 8 times

Online Publication Date: 1 February 2006

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We fabricate and measure a single-walled carbon nanotube transistor having a liquid-gate electrode. The ratio value of Ion/Ioff is as high as 104, indicating the presence of a semiconducting channel. A passivation layer over the source/drain electrode greatly suppresses the liquid-gate leakage by about three orders of magnitude. The channel currents are noticeably distinct between two liquid samples: distilled water and aqueous solution (1×10−4 M NaCl). This biological sensing ability is attributed to the different electrical double-layer capacitances with respect to the bulk part of the channel. The corresponding theoretical calculation is carried out in detail.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

In situ growth of Co nanofibers in In2O3–SnO2 matrix during sputtering deposition

Jun-ichi Echigoya and Junichi Sano

Appl. Phys. Lett. 88, 053115 (2006); http://dx.doi.org/10.1063/1.2171484 (3 pages) | Cited 4 times

Online Publication Date: 1 February 2006

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Co-sputtering onto (001) cubic zirconia from a target of indium tin oxide (ITO) partially covered by cobalt (Co) was carried out at substrate temperatures of 470–770 K in order to investigate the growth of Co nanofibers. During film growth, Co forms fibers in the growth direction in the single-crystalline ITO matrix. The cross section of the Co fibers, the size of which depends on the substrate temperature, was a rectangle with an edge 1–5 nm in length. The edge length of the Co fiber increased with the increase of the substrate temperature. The present method is attractive for application to produce magnetic recording media.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Cd Deposition by sputtering
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Capacitive resonant mass sensor with frequency demodulation detection based on resonant circuit

Sang-Jin Kim, Takahito Ono, and Masayoshi Esashi

Appl. Phys. Lett. 88, 053116 (2006); http://dx.doi.org/10.1063/1.2171650 (3 pages) | Cited 9 times

Online Publication Date: 1 February 2006

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In this letter, capacitive mass sensing with a 250-nm-thick single-crystalline silicon cantilever is investigated. The mass sensor employs the frequency modulation detection method using an electrical LC oscillator, in which the capacitance of the sensor serves as the component of the oscillator. The displacement noise of the demonstrated capacitive detection is 0.05 nm/(Hz)0.5, which is equivalent to the capacitance change of 2.4×10−21 F. It is experimentally shown that the capacitive detection is less affected to temperature fluctuation noise than optical detection. The detectable minimum mass of 1×10−14 g is achieved using capacitive detection in ambient atmosphere.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Direct etch method for microfludic channel and nanoheight post-fabrication by picoliter droplets

Utkan Demirci and Mehmet Toner

Appl. Phys. Lett. 88, 053117 (2006); http://dx.doi.org/10.1063/1.2170143 (3 pages) | Cited 4 times

Online Publication Date: 1 February 2006

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Photolithography is an expensive and significant step in microfabrication. Approaches that could change lithography would create an impact on semiconductor industry and microelectromechanical systems technologies. We demonstrate a direct etching method by ejecting etchant droplets at desired locations by using microdroplet ejector arrays. This method could be used for easy fabrication of poly(dimethylsiloxane) microfluidic channels and nanometer height postlike structures in microfluidic channels.
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87.85.Qr Nanotechnologies-design
87.85.Rs Nanotechnologies-applications
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.65.Cf Surface cleaning, etching, patterning
81.16.-c Methods of micro- and nanofabrication and processing

Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Takayoshi Kanbara, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, and Hiromichi Kataura

Appl. Phys. Lett. 88, 053118 (2006); http://dx.doi.org/10.1063/1.2171481 (3 pages) | Cited 7 times

Online Publication Date: 2 February 2006

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The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.
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73.40.Cg Contact resistance, contact potential
73.63.Fg Nanotubes
85.30.Tv Field effect devices
85.35.Kt Nanotube devices

Exclusive-OR gate with a single carbon nanotube

R. Sordan, K. Balasubramanian, M. Burghard, and K. Kern

Appl. Phys. Lett. 88, 053119 (2006); http://dx.doi.org/10.1063/1.2171474 (3 pages) | Cited 10 times

Online Publication Date: 2 February 2006

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Carbon nanotubes (CNTs) are now well-established as efficient channels for field-effect transistors (FETs). Logic circuitry based on CNTs have until now been demonstrated by replacing the silicon channel of a conventional metal-oxide-semiconducutor FET by a CNT. We propose a circuit design utilizing the ambipolarity of the Schottky-barrier-type CNT-FET to realize an exclusive-OR (XOR) gate using a single CNT. The merits and limitations of such a CNT-XOR gate with respect to conventional XOR gates are discussed.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
85.35.Kt Nanotube devices

Electrical noise in gold nanocluster sensors

W. Kruppa, M. G. Ancona, R. W. Rendell, A. W. Snow, E. E. Foos, and R. Bass

Appl. Phys. Lett. 88, 053120 (2006); http://dx.doi.org/10.1063/1.2168678 (3 pages) | Cited 6 times

Online Publication Date: 2 February 2006

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Motivated by applications to chemiresistive vapor sensing, the electrical noise properties of large-area gold nanocluster films are investigated experimentally. Measurements show thermal noise to dominate at low voltages and high frequencies, with a 1/f noise component becoming more important at a higher voltage and a lower frequency. The latter contribution obeys the Hooge formula in its frequency, voltage, and size dependences, and with a Hooge parameter whose relatively large size is attributed to constraints imposed by Coulomb blockade and disorder. Based on these results, a detection limit for nanocluster-based chemiresistors can be projected to approach one part per billion by volume.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis
72.70.+m Noise processes and phenomena

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, and Stuart B. Martin

Appl. Phys. Lett. 88, 053121 (2006); http://dx.doi.org/10.1063/1.2168496 (3 pages) | Cited 45 times

Online Publication Date: 2 February 2006

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We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary metal-oxide-semiconductor technology.
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85.35.Gv Single electron devices
85.30.Tv Field effect devices

Electromigration in self-organized single-crystalline silver nanowires

B. Stahlmecke, F.-J. Meyer zu Heringdorf, L. I. Chelaru, M. Horn-von Hoegen, G. Dumpich, and K. R. Roos

Appl. Phys. Lett. 88, 053122 (2006); http://dx.doi.org/10.1063/1.2172012 (3 pages) | Cited 15 times

Online Publication Date: 3 February 2006

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We present electromigration experiments on single-crystalline silver nanowires. The wires were grown on 4° vicinal silicon (100) substrates by self-organization and were contacted by electron beam lithography. The electromigration experiments were performed in situ in a scanning electron microscope at room temperature with constant dc conditions. In contrast to other experiments we observe void formation at the anode side of the wires. If the current is reversed, the electromigration behavior is also reversed.
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66.30.Qa Electromigration
73.63.-b Electronic transport in nanoscale materials and structures
81.07.Bc Nanocrystalline materials
81.16.Dn Self-assembly
81.16.Nd Micro- and nanolithography
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Multidimensional manipulation of carbon nanotube bundles with optical tweezers

Jianlong Zhang, Hyun Ik Kim, Cha Hwan Oh, Xiudong Sun, and Haiwon Lee

Appl. Phys. Lett. 88, 053123 (2006); http://dx.doi.org/10.1063/1.2172020 (3 pages) | Cited 10 times

Online Publication Date: 3 February 2006

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Optical manipulation of carbon nanotubes (CNTs) in aqueous solution was performed using a linearly polarized infrared tweezers system. Vertical and horizontal manipulation of single-walled and multiwalled carbon nanotubes (SWNTs, MWNTs) was carried out by changing the size of the CNTs and the trapping position. Rotation of MWNT bundles was confirmed using a circular polarized infrared optical tweezers system. Patterning of dots and letters with CNTs was successfully carried out on glass substrates.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
78.67.Ch Nanotubes
81.07.De Nanotubes
42.86.+b Optical workshop techniques

Carbon nanostructures on silicon substrates suitable for nanolithography

Y. Abdi, S. Mohajerzadeh, H. Hoseinzadegan, and J. Koohsorkhi

Appl. Phys. Lett. 88, 053124 (2006); http://dx.doi.org/10.1063/1.2168039 (3 pages) | Cited 7 times

Online Publication Date: 3 February 2006

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We report the application of vertically grown carbon nanotubes (CNTs) for submicron and nanolithography. The growth of CNTs is performed on silicon substrates using a nickel-seeded plasma-enhanced chemical vapor deposition method at a temperature of 650 °C and with a mixture of C2H2 and H2. The grown CNTs are encapsulated by a titanium-dioxide film and then mechanically polished to expose the buried nanotubes, and a plasma ashing step finalizes the process. The emission of electrons from the encapsulated nanotubes is used to write patterns on a resist-coated substrate placed opposite to the main CNT holding one. Scanning electron microscope has been used to investigate the nanotubes and the formation of nano-metric lines. Also a novel approach is presented to create isolated nanotubes from a previously patterned cluster growth.
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81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
61.46.Fg Nanotubes
81.65.Ps Polishing, grinding, surface finishing
81.16.Nd Micro- and nanolithography
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