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6 Feb 2006

Volume 88, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 88, 063509 (2006); http://dx.doi.org/10.1063/1.2171834 (3 pages)

M. Feng, N. Holonyak, R. Chan, A. James, and G. Walter
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Comment on “Abnormal contact resistance reduction of bonded copper interconnects in three-dimensional integration during current stressing” [ Appl. Phys. Lett. 86, 011903 (2005) ]

R. S. Timsit

Appl. Phys. Lett. 88, 066101 (2006); http://dx.doi.org/10.1063/1.2172402 (2 pages) | Cited 2 times

Online Publication Date: 7 February 2006

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Abstract Unavailable
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85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Cg Contact resistance, contact potential
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