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6 Feb 2006

Volume 88, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 88, 063509 (2006); http://dx.doi.org/10.1063/1.2171834 (3 pages)

M. Feng, N. Holonyak, R. Chan, A. James, and G. Walter
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Piezoelectric and ferroelectric properties of [Bi0.5(Na1−x−yKxLiy)0.5]TiO3 lead-free piezoelectric ceramics

Dunmin Lin, Dingquan Xiao, Jianguo Zhu, and Ping Yu

Appl. Phys. Lett. 88, 062901 (2006); http://dx.doi.org/10.1063/1.2171799 (3 pages) | Cited 96 times

Online Publication Date: 6 February 2006

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The piezoelectric and ferroelectric properties of [Bi0.5(Na1−x−yKxLiy)0.5]TiO3 (BNKLT-x/y) lead-free piezoelectric ceramics were studied. The ceramics show excellent piezoelectric and ferroelectric properties, and the optimum properties measured are as follows: piezoelectric constant d33 = 231 pC/N, planar and thickness electromechanical coupling factors kP = 41.0% and kt = 50.5%, remanent polarization Pr = 40.2 μC/cm2, and coercive field Ec = 2.47 kV/mm, respectively. Polarization versus electric (P-E) hysteresis loops of the ceramics are well rectangle shaped, and the dependence of P-E loops on temperature reveals that the depolarization temperature Td of BNKLT-0.15/0.075 ceramics, which simultaneously have good piezoelectric properties (d33 = 164 pC/N,kp = 36.3%,kt = 48.6%) and strong ferroelectricity (Pr = 38.8 μC/cm2,Ec = 3.73 kV/mm) at room temperature, is about 195 °C.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Improved performance in Ru/Ta2O5/Ru capacitors using forming gas annealing

Jun Lin, Toshiya Suzuki, Daisuke Matsunaga, and Kazuhiro Eguchi

Appl. Phys. Lett. 88, 062902 (2006); http://dx.doi.org/10.1063/1.2172736 (3 pages) | Cited 9 times

Online Publication Date: 6 February 2006

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The effects of forming gas (H2/N2 = 3%/97%) annealing (FGA) on Ru/Ta2O5/Ru capacitors are studied. It is confirmed that the effects of FGA highly depend on its timing in the preparation sequence. Though FGA after the patterning of the Ru top electrode results in the increased leakage current of the capacitor, FGA prior to the patterning of the Ru top electrode substantially reduces the leakage current and prevents subsequent thermal process-induced peeling between Ta2O5 and Ru, yielding the capacitor with the best electrical characteristics. Such improvements most likely originate from the formation of a stable bonded interface intrinsically linked to Ta2O5 and Ru, and the phase change from TaOx to Ta2O5.
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84.32.Tt Capacitors

Ferroelectric domains and twinning in high-quality SrBi2Ta2O9 single crystals

H. Amorín, V. V. Shvartsman, I. K. Bdikin, M. E. V. Costa, A. L. Kholkin, and N. A. Pertsev

Appl. Phys. Lett. 88, 062903 (2006); http://dx.doi.org/10.1063/1.2162704 (3 pages) | Cited 3 times

Online Publication Date: 7 February 2006

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The domain structure of high-quality SrBi2Ta2O9 (SBT) single crystals is investigated by x-ray diffraction and piezoelectric force microscopy. Both ferroelectric 180° domains and ferroelastic 90° domains (twins) are revealed at room temperature. Remarkably, coexisting domains of two types form a well-defined “herringbone” structure with mostly flat 90° walls. Formation of the observed complex domain pattern is attributed to a two-stage process associated with the presence of separate ferroelastic and ferroelectric phase transitions in SBT.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
61.72.Mm Grain and twin boundaries
77.80.B- Phase transitions and Curie point
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Electromechanical properties of poly(vinylidene-fluoride-chlorotrifluoroethylene) copolymer

Zhimin Li, Yuhong Wang, and Z.-Y. Cheng

Appl. Phys. Lett. 88, 062904 (2006); http://dx.doi.org/10.1063/1.2170425 (3 pages) | Cited 19 times

Online Publication Date: 7 February 2006

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The electromechanical response of poly(vinylidene-fluoride-chlorotrifluoroethylene) [P(VDF-CTFE)] copolymers with 9 mol % (CT9) and 12 mol % CTFE (CT12) is reported. The CT12 (at room temperature) exhibits an electrostrictive strain response of more than 5% and a piezoelectric constant d33 of 140 pC/N at a dc bias of 70 MV/m. It is found that about 70% of crystalline regions in P(VDF-CTFE) is at the nonpolar phase and that the CT9 has a crystallinity about 25% higher than the CT12. The difference in electromechanical performance between the CT9 and CT12 cannot be completely explained using the structure/conformation change alone. It is believed that the contribution of the interfacial layers to the polarization and electrostrictive strain response plays an important role.
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77.65.Bn Piezoelectric and electrostrictive constants
77.65.Ly Strain-induced piezoelectric fields
77.84.Jd Polymers; organic compounds
77.22.Ej Polarization and depolarization

Enhanced piezoelectric and pyroelectric effects in single-phase multiferroic Bi1−xNdxFeO3 (x = 0–0.15) ceramics

G. L. Yuan and Siu Wing Or

Appl. Phys. Lett. 88, 062905 (2006); http://dx.doi.org/10.1063/1.2169905 (3 pages) | Cited 85 times

Online Publication Date: 7 February 2006

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Single-phase multiferroic Bi1−xNdxFeO3 (x = 0–0.15) ceramics are polarized and their piezoelectric and pyroelectric effects are reported. The success in polarizing the ceramics originates from low electrical conductivities controlled predominantly by the Poole-Frenkel conduction mechanism. Limited internal traps due to reduced oxygen vacancies in the ceramics result in sufficiently low leakage current densities of <30 mA/m2 even at a high electric field of 145 kV/cm. The piezoelectric d33 coefficients of the ceramics before and after annealing at 550 °C for 4 h are measured to be ∼ 28 and ∼ 24 pC/N, respectively. These values are higher than those of most major lead-free high-temperature piezoelectric ceramics.
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77.65.−j
77.80.−e
75.80.+q Magnetomechanical effects, magnetostriction

Millimeter wave spectroscopy of rocks and fluids

John A. Scales and Michael Batzle

Appl. Phys. Lett. 88, 062906 (2006); http://dx.doi.org/10.1063/1.2172403 (3 pages) | Cited 3 times

Online Publication Date: 8 February 2006

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One region of the electromagnetic spectrum that is relatively unexploited for materials characterization is the millimeter wave band (frequencies roughly between 40 and 300 GHz). Millimeter wave techniques involve free-space (noncontacting) measurements which have a length scale that makes them ideal for characterizing bulk properties of multicomponent composites where the scale of homogeneity is on the order of millimeters. Such composites include granular materials such as rocks, fluid mixtures, suspensions, and emulsions. Here we show measurements on partially saturated rocks and an oil/water mixture, demonstrating that millimeter wave spectroscopy is a sensitive yet rapid measure of changing composition.
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78.70.Gq Microwave and radio-frequency interactions
64.75.-g Phase equilibria
91.60.-x Physical properties of rocks and minerals

Dielectric properties of 〈001〉-oriented Ba0.6Sr0.4TiO3 thin films on polycrystalline metal tapes using biaxially oriented MgO/γ-Al2O3 buffer layers

W. Choi, B. S. Kang, Q. X. Jia, V. Matias, and A. T. Findikoglu

Appl. Phys. Lett. 88, 062907 (2006); http://dx.doi.org/10.1063/1.2173232 (3 pages) | Cited 9 times

Online Publication Date: 9 February 2006

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We report the growth of 〈001〉-oriented Ba0.6Sr0.4TiO3 (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and γ-Al2O3 buffer layers. Dielectric constant values of our BST films were up to ∼ 85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100 Hz to 1 MHz. These results demonstrate the versatility of using IBAD-textured MgO and γ-Al2O3 buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Switching spectroscopy piezoresponse force microscopy of ferroelectric materials

Stephen Jesse, Arthur P. Baddorf, and Sergei V. Kalinin

Appl. Phys. Lett. 88, 062908 (2006); http://dx.doi.org/10.1063/1.2172216 (3 pages) | Cited 68 times

Online Publication Date: 9 February 2006

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The application of ferroelectric materials for electronic devices necessitates the quantitative study of local switching behavior, including imprint, coercive bias, remanent and saturation responses, and work of switching. Here we introduce switching spectroscopy piezoresponse force microscopy as a tool for real-space imaging of switching properties on the nanoscale. The hysteresis curves, acquired at each point in the image, are analyzed in the thermodynamic and kinetic limits. We expect that this approach will further understanding of the relationships between material microstructure and polarization switching phenomena on the nanoscale, and provide a quantitative tool for ferroelectric-based device characterization.
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77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Growth and properties of (104)-oriented ferroelectric Nd-substituted Bi4Ti3O12 films on Si(100) using (111)-oriented SrRuO3/Pt electrodes

Sung Kyun Lee, Dietrich Hesse, and Ulrich Gösele

Appl. Phys. Lett. 88, 062909 (2006); http://dx.doi.org/10.1063/1.2168260 (3 pages) | Cited 8 times

Online Publication Date: 10 February 2006

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(104)-oriented Nd-substituted Bi4Ti3O12 (BNT) ferroelectric thin films were grown on (111)-oriented SrRuO3/Pt electrodes on yttria-stabilized ZrO2 (YSZ)-buffered Si(100) substrates by pulsed laser deposition. X-ray diffraction characterization revealed the epitaxial orienta-tion relationships as follows: BNT(104)‖SrRuO3(111)‖Pt(111)‖YSZ(100)‖Si(100); BNT[010]‖SrRuO3[0math1]‖Pt[0math1]‖YSZ〈001〉‖Si〈001〉. The BNT films exhibited a remanent polarization (2Pr) of 37.8 μC/cm2 and a coercive field (2Ec) of 212 kV/cm, for a maximum applied electric field of 300 kV/cm.
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77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Fg Pulsed laser ablation deposition
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