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13 Feb 2006

Volume 88, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 072905 (2006); http://dx.doi.org/10.1063/1.2172744 (3 pages)

Y. L. Li and L. Q. Chen
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Self-assembled monolayer as an antiadhesion layer on a nickel nanostamper in the nanoreplication process for optoelectronic applications

Namseok Lee, Sungwoo Choi, and Shinill Kang

Appl. Phys. Lett. 88, 073101 (2006); http://dx.doi.org/10.1063/1.2172714 (3 pages) | Cited 10 times

Online Publication Date: 14 February 2006

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In this letter, self-assembled monolayer (SAM) was applied as an antiadhesion layer in the nanoreplication process to reduce the surface energy between the nanostamper and the polymeric nanopatterns. After electrochemical pretreatment process, n-dodecanethiol SAM was deposited on the nickel stamper using the solution deposition method. To examine the feasibility of the SAM as an antiadhesion layer, contact angle and lateral friction force were measured at room temperature. To verify the effectiveness of SAM for nanoreplication process, polymeric patterns were replicated by hot-embossing process using SAM-deposited nickel stamper. To apply our method to replication of sub-100-nm-scale nanopillar arrays, the nanopatterned substrate with nanopillar arrays was replicated using nanoinjection molding process with SAM-deposited nickel stamper.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.Nd Micro- and nanolithography
81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
68.35.Md Surface thermodynamics, surface energies

Current-voltage characteristics and parameter retrieval of semiconducting nanowires

Z. Y. Zhang, C. H. Jin, X. L. Liang, Q. Chen, and L.-M. Peng

Appl. Phys. Lett. 88, 073102 (2006); http://dx.doi.org/10.1063/1.2177362 (3 pages) | Cited 71 times

Online Publication Date: 14 February 2006

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Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias. In contrast to the conventional Schottky diode, the reverse current in the nano-Schottky barrier structure is not negligible and the current is largely tunneling rather than thermionic. Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3 nanowires.
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73.63.-b Electronic transport in nanoscale materials and structures
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling
73.40.Sx Metal-semiconductor-metal structures

Nanoindentation-induced deformation in Al–Pd–Mn single quasicrystals

C. Coupeau, M. Texier, A. Joulain, and J. Bonneville

Appl. Phys. Lett. 88, 073103 (2006); http://dx.doi.org/10.1063/1.2178412 (3 pages) | Cited 2 times

Online Publication Date: 14 February 2006

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Nanoindentation experiments were performed at room temperature on Al–Pd–Mn single quasicrystals to induce plastic deformation in very localized areas and to examine microscopic mechanisms taking place in the bulk. Nanoindentation imprints investigated by transmission electron microscopy revealed the presence of grains and crystalline phases, but did not provide any evidence of dislocation activity. Pop-in events observed on the nanoindentation curves support the idea of grain formation and phase transformation just beneath the indenter, as shown by transmission electron microscopy.
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81.40.Lm Deformation, plasticity, and creep
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
62.20.F- Deformation and plasticity
64.70.K- Solid-solid transitions

Gate capacitance in electrochemical transistor of single-walled carbon nanotube

Hidekazu Shimotani, Takayoshi Kanbara, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, and Hiromichi Kataura

Appl. Phys. Lett. 88, 073104 (2006); http://dx.doi.org/10.1063/1.2173626 (3 pages) | Cited 11 times

Online Publication Date: 14 February 2006

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In the electrochemical transistor of a single-walled carbon nanotube, we introduced the fourth terminal, which works as a reference electrode. This enables accurate control of change in gate voltage, i.e., potential difference between the electrolyte and the source electrode, and quantitative analyses of the gate capacitance. We found that the geometrical capacitance, which was ignored in the conventional model, makes a crucial contribution to the device characteristics, comparable to that from the chemical capacitance.
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85.35.Kt Nanotube devices
82.45.Fk Electrodes
82.45.Gj Electrolytes

Photoluminescent silicon nanocrystals synthesized by reactive laser ablation

Daria Riabinina, Christophe Durand, Mohamed Chaker, and Federico Rosei

Appl. Phys. Lett. 88, 073105 (2006); http://dx.doi.org/10.1063/1.2174096 (3 pages) | Cited 18 times

Online Publication Date: 15 February 2006

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We report the synthesis of Si nanocrystals embedded in a SiO2 matrix using reactive laser ablation in oxygen atmosphere followed by annealing. We observe a strong photoluminescence signal, which is related to the oxygen background pressure used for synthesis. The average nanoparticle size, obtained independently by fitting photoluminescence spectra and from x-ray diffraction patterns, decreases from 16 to 2 nm with increasing oxygen pressure from 0.01 to 1.1 mTorr. The maximum photoluminescence intensity is observed at 0.8 mTorr, which corresponds to a crystal size of 2.2±0.4 nm. We find that the concentration of nonoxidized Si, which is controlled by the oxygen pressure, determines the final nanocrystal size.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
61.72.Cc Kinetics of defect formation and annealing
81.16.Pr Micro- and nano-oxidation
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Simple method for the fabrication of a high dielectric constant metal-oxide-semiconductor capacitor embedded with Pt nanoparticles

Ch. Sargentis, K. Giannakopoulos, A. Travlos, N. Boukos, and D. Tsamakis

Appl. Phys. Lett. 88, 073106 (2006); http://dx.doi.org/10.1063/1.2174099 (3 pages) | Cited 11 times

Online Publication Date: 15 February 2006

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We present a simple method for the fabrication of Pt nanoparticles embedded in a high-k dielectric. The nanoparticles are formed during the first deposition stages of a thin Pt layer on a 30 Å SiO2 tunneling layer, at room temperature, performed with electron-beam (e-beam) evaporation of metallic Pt. Then, the nanoparticles are covered, in situ, by a thicker HfO2 layer, which forms a control oxide. The fabricated nanoparticles have an average diameter of 4.9 nm, sheet density of 3.2×1012 cm−2 and they present high uniformity in their size. High-frequency capacitance-voltage (C-V) measurements demonstrate that this structure operates as a memory device.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Ch Permittivity (dielectric function)
73.40.Gk Tunneling
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Maximum power of quantum dot laser versus internal loss

Levon V. Asryan

Appl. Phys. Lett. 88, 073107 (2006); http://dx.doi.org/10.1063/1.2174103 (3 pages) | Cited 4 times

Online Publication Date: 15 February 2006

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Internal loss, which increases with the carrier density outside the active region, causes a rollover of the light-current curve and strongly limits the output power of a diode laser with a single layer of quantum dots. The maximum power is calculated as a steeply decreasing function of internal loss cross section. The use of multiple layers of quantum dots is shown to significantly improve the laser output characteristics.
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42.55.Px Semiconductor lasers; laser diodes

Reproducible interconnects assembled from gold nanorods

Birol Ozturk, Charles Blackledge, Bret N. Flanders, and Daniel R. Grischkowsky

Appl. Phys. Lett. 88, 073108 (2006); http://dx.doi.org/10.1063/1.2174109 (3 pages) | Cited 19 times

Online Publication Date: 15 February 2006

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By using cleanroom-based lithographic procedures to produce identical electrode arrays, we have fabricated dielectrophoretic nanowires that vary in their conductance by ±10%. Transmission electron microscopy established the presence of interconnect segments composed of densely aggregated nanoparticles and of individual nanorods lying in the current-carrying path. The current-voltage profiles of these interconnects exhibited barriers to charge transport at temperatures less than ∼ 225 K; furthermore, their conductances increased exponentially with temperature with an activation energy comparable to the nanorod charging energy. These results indicate that the Coulomb blockade associated with individual nanorods in the interconnects is the primary conductance-limiting feature.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
82.45.-h Electrochemistry and electrophoresis
68.37.Lp Transmission electron microscopy (TEM)
73.23.Hk Coulomb blockade; single-electron tunneling

Initial growth of nanocrystalline diamond/β-SiC composite films: A competitive deposition process

Vadali. V. S. S. Srikanth, M. H. Tan, and X. Jiang

Appl. Phys. Lett. 88, 073109 (2006); http://dx.doi.org/10.1063/1.2175478 (3 pages) | Cited 11 times

Online Publication Date: 16 February 2006

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Although nanocrystalline diamond/β-SiC composite gradient interlayers have been successfully deposited in dealing with the problem of diamond thin-film adhesion to metallic substrates, initial growth process of the two components has not been described, so far. In this letter, we propose that the deposition of composite interlayer is possible because of a selective growth process of diamond and β-SiC phases. There is a competition between the diamond and the β-SiC crystallites to occupy the spaces available on the substrate. The space competition is during the initial nucleation period of the process and also during film growth, leading to the formation of the nanocrystalline composite. The secondary nucleation of β-SiC on the existing diamond surfaces depends on the flux of incoming β-SiC forming gas species. This provides us with a possibility to control phase structure and composition of the composite film by adjusting the tetramethyl silane flow rate.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.U- Carbon/carbon-based materials
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electron-phonon interaction and its influence on reconstruction of single-walled carbon nanotube radial breathing mode spectra

Zhengtang Luo, Fotios Papadimitrakopoulos, and Stephen K. Doorn

Appl. Phys. Lett. 88, 073110 (2006); http://dx.doi.org/10.1063/1.2173722 (3 pages) | Cited 10 times

Online Publication Date: 16 February 2006

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The relative electron-phonon interaction matrix elements (Mph) for 28 (n,m) semiconducting single walled carbon nanotubes (SWNTs) species were extracted from the resonance Raman cross sections of individually dispersed high-pressure CO SWNTs. The observed Mph pattern was fitted according to nanotube family [i.e., (2n+m) = const] and modality [i.e., mod(n−m,3) = 1, or 2] using an empirical equation based on trigonal warping effects. The predicted Mph trends enabled significant improvement to the reconstruction of the radial breathing mode spectra, so that a better match was obtained to the experimental spectra for both dispersed and aggregated SWNTs. The latter provides an initial indication that the observed Mph trends are preserved during aggregation.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
63.20.K- Phonon interactions
71.38.-k Polarons and electron-phonon interactions
78.67.Ch Nanotubes
78.30.Hv Other nonmetallic inorganics
61.46.Fg Nanotubes

Transparent Ho3+-doped nano-glass-ceramics for efficient infrared emission

K. Driesen, V. K. Tikhomirov, C. Görller-Walrand, V. D. Rodriguez, and A. B. Seddon

Appl. Phys. Lett. 88, 073111 (2006); http://dx.doi.org/10.1063/1.2174839 (3 pages) | Cited 37 times

Online Publication Date: 16 February 2006

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We developed transparent 3.5 mol % Ho3+-doped oxyfluoride nano-glass-ceramics, where the Ho3+-dopants dissolve in the 6 nm diameter β-PbF2 nanocrystals. The cubic site of Ho3+ and a low vibration frequency of its PbF2 environment result in an intense and 50 nm broad emission band math→math of Ho3+ at 1.2 μm with a temperature independent lifetime of 1.6 ms. Another 40 nm broad emission band math→math at 1.47 μm with a lifetime of 24 μs was also excited, the lifetime of this band increased to 60 μs at 77 K. These two bands have potential application for optical amplification in telecommunications.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.55.Qr Amorphous materials; glasses and other disordered solids

Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network

Yasuhiko Ishikawa, Chihiro Yamamoto, and Michiharu Tabe

Appl. Phys. Lett. 88, 073112 (2006); http://dx.doi.org/10.1063/1.2176849 (3 pages) | Cited 2 times

Online Publication Date: 17 February 2006

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A two-dimensional dislocation network artificially embedded in a silicon-on-insulator (SOI) layer was examined as the source of lattice strain to generate a periodic potential. A screw dislocation network with the period of 20 nm was formed in an SOI layer using a twist bonding of two SOI wafers. n-channel metal-oxide-semiconductor field-effect transistors using the dislocation-embedded SOI layer showed an oscillation of drain current with the gate voltage at the temperatures below 40 K. This oscillation is ascribed to the single-electron tunneling through the spatially modulated potential. The results suggest that the dislocation network works as the strain source to form the potential array.
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85.35.Gv Single electron devices
85.30.Tv Field effect devices

Structural changes and catalytic activity of platinum nanoparticles supported on C60 and carbon nanotube films during the operation of direct methanol fuel cells

István Robel, G. Girishkumar, Bruce A. Bunker, Prashant V. Kamat, and K. Vinodgopal

Appl. Phys. Lett. 88, 073113 (2006); http://dx.doi.org/10.1063/1.2177354 (3 pages) | Cited 10 times

Online Publication Date: 17 February 2006

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Comparison of the structure and activity of Pt nanoparticles anchored on two nanostructured carbon supports, C60 and carbon nanotubes (CNTs) provides insight into their electrocatalytic activity in direct methanol fuel cells. The local structure of platinum atoms during the initial stages of the catalytic oxidation of methanol was probed using x-ray absorption spectroscopy. A large fraction of the Pt atoms in the Pt–C60 nanocomposite continuously undergoes structural changes during the initial stages of methanol oxidation. The Pt-CNT system, however, proves to be more robust in maintaining its initial morphology and higher electrocatalytic activity. These observations reflect the importance of the carbon support in controlling the catalyst morphology and activity during methanol oxidation.
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82.45.Jn Surface structure, reactivity and catalysis
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
82.45.Yz Nanostructured materials in electrochemistry
82.47.-a Applied electrochemistry
78.70.Dm X-ray absorption spectra
64.70.K- Solid-solid transitions

Optical characterizations of iodine molecular wires formed inside the one-dimensional channels of an AlPO4-5 single crystal

J. T. Ye, Z. K. Tang, and G. G. Siu

Appl. Phys. Lett. 88, 073114 (2006); http://dx.doi.org/10.1063/1.2177361 (3 pages) | Cited 7 times

Online Publication Date: 17 February 2006

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A uniform array of one-dimensional molecular iodine wires is fabricated by introducing iodine molecules into the channels of AFI zeolite crystals through the vapor phase. The only possible wire structures are formed by linking individual iodine molecules along intramolecular bond axis into a single line. Polarization dependence of Raman intensity at modes of iodine species indicates that the wires are aligned perfectly along the c axis of AFI crystal. Polarized optical absorption as well as resonant Raman scattering reveal two wire species inside the channels of AFI zeolite: In− and (I2)n wires.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.30.Hv Other nonmetallic inorganics

Continuous polymer nanofibers by extrusion into a viscous medium: A modified wet-spinning technique

M. Gorantla, S. E. Boone, M. El-Ashry, and D. Young

Appl. Phys. Lett. 88, 073115 (2006); http://dx.doi.org/10.1063/1.2177546 (3 pages) | Cited 2 times

Online Publication Date: 17 February 2006

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We present a wet-spinning technique capable of producing continuous polymer nanofibers. This method involves injecting a solvated polymer into a highly viscous moving medium through a microaperture. The extruded fiber moves in a predictable spiral path and is collected around a spinning mandrel which also serves to pull the extruded fiber away from the aperture. Semicontinuous, solid nanofibers of polyvinyl butyral were produced with diameters ranging from 10 μm to 400 nm. Electron microscopy indicates that submicron fibers exhibit a ribbonlike morphology. The effect of different processing parameters on the fiber size and shape is discussed.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.10.Fq Growth from melts; zone melting and refining
61.41.+e Polymers, elastomers, and plastics
61.46.-w Structure of nanoscale materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
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