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27 Feb 2006

Volume 88, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 88, 093101 (2006); http://dx.doi.org/10.1063/1.2179133 (3 pages)

C. X. Xu, X. W. Sun, Z. L. Dong, G. P. Zhu, and Y. P. Cui
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Composition-dependent structures and properties of (1-x)BaTiO3-xNaNbO3 thin films

Shan-Tao Zhang, Ming-Hui Lu, Yan-Feng Chen, Zhi-Guo Liu, Nai-Ben Ming, Jia Wang, and Guang-Xu Cheng

Appl. Phys. Lett. 88, 092901 (2006); http://dx.doi.org/10.1063/1.2179616 (3 pages) | Cited 1 time

Online Publication Date: 28 February 2006

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(1-x)BaTiO3-xNaNbO3 (x = 0.025, 0.050, and 0.075) thin films were prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. The structures, ferroelectric and dielectric properties were found to be strongly dependent on the composition wherein the ferroelectric polarization, tunability and temperature coefficient of capacitor (TCC) decrease with increasing x. At an applied field of 390 kV/cm, the room-temperature tunability are 67%, 38%, and 7% for the films with x = 0.025, 0.050, and 0.075, respectively. Especially, the tunability reaches 78% with a field of 610 kV/cm for the films with x = 0.025. The measured negative TCC values of these films are 1.7×10−3/°C, 1.0×10−3/°C, and 8.9×10−4/°C, respectively.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
82.80.-d Chemical analysis and related physical methods of analysis

Improved ferroelectric property of LaNiO3/Pb(Zr0.2Ti0.8)O3/LaNiO3 capacitors prepared by chemical solution deposition on platinized silicon

H. Han, J. Zhong, S. Kotru, P. Padmini, X. Y. Song, and R. K. Pandey

Appl. Phys. Lett. 88, 092902 (2006); http://dx.doi.org/10.1063/1.2180878 (3 pages) | Cited 22 times

Online Publication Date: 28 February 2006

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We report a technique to prepare top and bottom oxide electrodes of LaNiO3 (LNO) for lead zirconate titanate (PZT) films using a chemical solution deposition. LNO/PZT/LNO sandwich structures were prepared on platinized silicon by spin coating combined with rapid thermal annealing. Pt dots were sputtered on top of LaNiO3 film to serve as protective masks during etching of the uncovered LaNiO3 layer using dilute hydrochloric acid. For comparison, Pt/PZT/Pt capacitors were also prepared using the same processing conditions. Electrical measurements were carried out on both Pt/LNO/PZT/LNO/Pt and Pt/PZT/Pt structures. The remnant polarizations and coercive fields for these two capacitors are 17.4 and 21.4 μC/cm2, 71 and 81.5 kV/cm respectively at 5 V. The leakage current density for the Pt/LNO/PZT/LNO/Pt structure is about 1.38×10−6 A/cm2 at 5 V, which is lower than that of PZT deposited on Pt electrode. After 109 bipolar switching cycles, no significant change in remnant polarization was observed in the Pt/LNO/PZT/LNO/Pt capacitor, in comparison to the Pt/PZT/Pt capacitor which lost more than 50% of its original remnant polarization.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films

Yue Zheng, Biao Wang, and C. H. Woo

Appl. Phys. Lett. 88, 092903 (2006); http://dx.doi.org/10.1063/1.2177365 (3 pages) | Cited 17 times

Online Publication Date: 1 March 2006

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Effects of interfacial dislocations on the properties of ferroelectric thin films are investigated, using the dynamic Ginzburg–Landau equation. Our results confirm the existence of a dead layer near the film/substrate interface. Due to the combined effects of the dislocations and the near-surface eigenstrain relaxation, the ferroelectric properties of about one-third of the film volume suffers.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
61.72.Bb Theories and models of crystal defects
61.72.Lk Linear defects: dislocations, disclinations
77.22.Gm Dielectric loss and relaxation

Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

Dipak Barua, Theodosia Gougousi, Erin D. Young, and Gregory N. Parsons

Appl. Phys. Lett. 88, 092904 (2006); http://dx.doi.org/10.1063/1.2181651 (3 pages) | Cited 4 times

Online Publication Date: 3 March 2006

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Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70–120 °C) by a cyclic adsorption/reaction processes using supercritical CO2 solvent. Precursors included Al(hfac)3, Al(acac)3, and Pd(hfac)2, and aqueous H2O2, tert-butyl peracetate, and H2 were used as the oxidants or reductants. For the precursors studied, growth proceeds through a multilayer precursor adsorption in each deposition cycle, and film thickness increased linearly with the number of growth cycles.
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68.55.A- Nucleation and growth
68.43.Mn Adsorption kinetics
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Coexistence of MA and MC phases in Pb(Mg1/3Nb2/3)0.68Ti0.32O3 single crystals

Peng Bao, Feng Yan, Xiaomei Lu, Jinsong Zhu, Huimin Shen, Yening Wang, and Haosu Luo

Appl. Phys. Lett. 88, 092905 (2006); http://dx.doi.org/10.1063/1.2177370 (3 pages) | Cited 14 times

Online Publication Date: 3 March 2006

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The coexistence of MA (space group Cm) and MC (space group Pm) phases in as-grown Pb(Mg1/3Nb2/3)0.68Ti0.32O3 (PMNT32) single crystals is observed at room temperature under polarization microscopy. Laminar MA and MC domains normal to 〈110〉cub direction appear alternately in PMNT32 single crystals. In the heating run, the MA domains show a phase transition sequence of MA-MC-cubic, while the MC domains show only a phase transition of MC to cubic. In the cooling run, the phase transition sequence of cubic-MC-MA can be observed in the whole sample. It is suggested that the internal stress in the as-grown PMNT crystals is the main reason for the coexistence of the MA and MC phases.
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77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
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