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4 Sep 2006

Volume 89, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 103101 (2006); http://dx.doi.org/10.1063/1.2345352 (3 pages)

F. Hao and P. Nordlander
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Single-polarization polarization maintaining optical fiber with large stress birefringence and high homogeneity

M. C. Li, L. H. Liu, T. P. Xiao, J. J. Xue, L. T. Liang, H. L. Wang, and M. Xiong

Appl. Phys. Lett. 89, 101101 (2006); http://dx.doi.org/10.1063/1.2345238 (3 pages) | Cited 2 times

Online Publication Date: 5 September 2006

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A type of high-birefringence polarization maintaining (PM) fiber was designed and fabricated using a modified chemical vapor deposition (MCVD) process. Different from conventional stress-applied PM fibers, the shape of the stress jacket is like a “capsule.” By study of the cross sectional component distribution and a calculation of stress birefringence using the finite element method, the structure and composition of capsule PM fiber were optimized and the hybrid MCVD process was developed. With advantages in homogeneity and temperature performance, capsule fiber has great potential in applications such as fiber gyroscopes, fiber hydrophones, and other optical fiber sensors.
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42.81.Gs Birefringence, polarization
42.81.Bm Fabrication, cladding, and splicing
42.15.Eq Optical system design
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Coupled-cavity two-dimensional photonic crystal waveguide ring laser

A. R. Alija, L. J. Martínez, P. A. Postigo, C. Seassal, and P. Viktorovitch

Appl. Phys. Lett. 89, 101102 (2006); http://dx.doi.org/10.1063/1.2345374 (3 pages) | Cited 16 times

Online Publication Date: 5 September 2006

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Coupled-cavity hexagonal ringlike photonic crystal lasers are fabricated as a class of single mode photonic crystal laser light sources. The structures are formed by placing one missing hole nanocavity (H1 type) between each two segments at 60° that form the hexagonal ringlike photonic crystal laser. The H1 cavities act as a mode filter, clamping the frequency of emission of the laser device. The emission frequency in these rings with cavities varies as the filling factor is changed, allowing the tuning of the laser emission. Stable single mode lasing occurs with side mode suppression greater than 20 dB. This kind of devices may be used as an efficient selective filter of modes and may have important applications in future photonic devices for optical communications and optical sensing.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Effect of a thin optical Kerr medium on a Laguerre-Gaussian beam

Weiya Zhang and Mark G. Kuzyk

Appl. Phys. Lett. 89, 101103 (2006); http://dx.doi.org/10.1063/1.2345588 (3 pages) | Cited 7 times

Online Publication Date: 5 September 2006

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Using a generalized Gaussian beam decomposition method the authors determine the propagation of a Laguerre-Gaussian (LG) beam that has passed through a thin nonlinear optical Kerr medium. The orbital angular momentum per photon of the beam is found to be conserved while the component beams change. As an illustration of applications, the authors propose and demonstrate a Z-scan experiment using a LG01 beam and a dye-doped polymer film.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

High-quality-factor photonic crystal heterostructure laser

M. H. Shih, Wan Kuang, Adam Mock, Mahmood Bagheri, E. H. Hwang, J. D. O’Brien, and P. D. Dapkus

Appl. Phys. Lett. 89, 101104 (2006); http://dx.doi.org/10.1063/1.2345912 (3 pages) | Cited 10 times

Online Publication Date: 5 September 2006

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A high-quality-factor (Q) photonic crystal heterostructure laser was designed and characterized. Good agreement was obtained between the experimental lasing data and three-dimensional finite-difference time-domain numerical predictions.
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42.55.Tv Photonic crystal lasers and coherent effects
42.55.Px Semiconductor lasers; laser diodes
42.70.Qs Photonic bandgap materials
42.60.By Design of specific laser systems

Influence of a controllable scatterer on the lasing properties of an ultralow threshold Raman microlaser

A. Mazzei, H. Krauter, Oliver Benson, and Stephan Götzinger

Appl. Phys. Lett. 89, 101105 (2006); http://dx.doi.org/10.1063/1.2344938 (3 pages) | Cited 1 time

Online Publication Date: 5 September 2006

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The authors investigate Raman lasing in a spherical high-Q glass microresonator with the help of a near-field optical scanning probe. Scattered photons are utilized to perform mode mapping of both pump and lasing modes. Single mode lasing with a record low threshold of 4.3 μW is observed. They investigate the position dependent quenching of the laser emission by the additional loss introduced by the subwavelength scanning probe and derive an estimation of the mechanical force gradient acting on the probe. They generalize a theoretical model of Raman lasing in microresonators to describe these effects.
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42.55.Ye Raman lasers
42.55.Sa Microcavity and microdisk lasers
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
37.10.Vz Mechanical effects of light on atoms, molecules, and ions

Long range surface plasmon fluorescence spectroscopy

Amal Kasry and Wolfgang Knoll

Appl. Phys. Lett. 89, 101106 (2006); http://dx.doi.org/10.1063/1.2345594 (3 pages) | Cited 17 times

Online Publication Date: 6 September 2006

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Surface plasmon modes, resonantly excited at the two sides of an ultrathin (noble) metal layer in contact with two (nearly) identical dielectric media interact via the overlap of their electromagnetic fields resulting in two new coupled modes, i.e., a short range and a long range surface plasmon (LRSP), respectively. The authors demonstrate that both the enhanced optical field of the LRSP wave at the metal/dielectric interface as well as its increased (evanescent) penetration depth reaching farther into the analyte solution can be used for significant enhancements when using LRSP optics in a fluorescence spectroscopic mode of operation. They demonstrate this for the detection of fluorescence intensities from chromophore labeled proteins bound to the sensor surface matrix.
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78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
87.80.-y Biophysical techniques (research methods)
87.64.K- Spectroscopy

Theory of relaxation oscillations in semiconductor quantum dot lasers

Ermin Malić, Kwang J. Ahn, Moritz J. P. Bormann, Philipp Hövel, Eckehard Schöll, Andreas Knorr, Matthias Kuntz, and Dieter Bimberg

Appl. Phys. Lett. 89, 101107 (2006); http://dx.doi.org/10.1063/1.2346224 (3 pages) | Cited 16 times

Online Publication Date: 6 September 2006

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A microscopic approach combining rate equations for photon and electron/hole occupations with kinetic equations for Coulomb scattering rates involving quantum dot and wetting layer states in InAs/GaAs quantum dot lasers is presented. The authors find strong damping of relaxation oscillations on a picosecond to nanosecond time scale depending on the type of the initial perturbation, similar to the damping observed in experiments by various groups. They show that the Coulomb interaction is crucial for an understanding of this characteristic strong damping.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Homogeneous cooperative upconversion in sol-gel fabricated erbium doped channel waveguides

R. R. Thomson, H. T. Bookey, N. Suyal, and A. K. Kar

Appl. Phys. Lett. 89, 101108 (2006); http://dx.doi.org/10.1063/1.2347113 (3 pages)

Online Publication Date: 6 September 2006

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Time resolved fluorescence emission from erbium doped silicate channel waveguides is studied using an established model for homogeneous cooperative upconversion. Each sample was fabricated using only a single sol-gel deposition for each of the core and cladding layers. As a result of the analysis, values of 1.7×10−17 and 1.4×10−17 cm3/s are reported for the homogeneous cooperative upconversion constant that governs the interaction of homogeneously distributed erbium ions in the math state. The values reported here are found to be in agreement with those reported in other predominantly silica based glasses.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.86.+b Optical workshop techniques
42.82.Gw Other integrated-optical elements and systems
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

High Q defect mode and laser action in one-dimensional hybrid photonic crystal containing cholesteric liquid crystal

Yuko Matsuhisa, Ryotaro Ozaki, Katsumi Yoshino, and Masanori Ozaki

Appl. Phys. Lett. 89, 101109 (2006); http://dx.doi.org/10.1063/1.2347114 (3 pages) | Cited 8 times

Online Publication Date: 6 September 2006

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The authors have investigated the optical characteristics of a one-dimensional hybrid photonic crystal (1D HPC) containing cholesteric liquid crystal (CLC) as a defect by theoretical calculation and predicted the appearance of additional modes at the band edges of the CLC defect, whose Q factor was higher than those of the other defect modes. They have confirmed the appearance of the additional mode experimentally. Single-mode laser action with low pumping threshold was observed in a 1D HPC with a dye-doped CLC defect, which is based on the additional defect mode with a high Q factor peculiar to the CLC defect having periodic structure.
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42.70.Qs Photonic bandgap materials
42.55.Tv Photonic crystal lasers and coherent effects
42.60.By Design of specific laser systems
42.70.Hj Laser materials
42.70.Df Liquid crystals

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, and Toshiki Makimoto

Appl. Phys. Lett. 89, 101110 (2006); http://dx.doi.org/10.1063/1.2347115 (3 pages) | Cited 10 times

Online Publication Date: 6 September 2006

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A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.
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73.63.Hs Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
85.60.Jb Light-emitting devices

Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes

M. Bou Sanayeh, A. Jaeger, W. Schmid, S. Tautz, P. Brick, K. Streubel, and G. Bacher

Appl. Phys. Lett. 89, 101111 (2006); http://dx.doi.org/10.1063/1.2345225 (3 pages) | Cited 19 times

Online Publication Date: 6 September 2006

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The authors present a detailed investigation of defects generated during catastrophic optical damage (COD) in high-power 650 nm AlGaInP lasers using microphotoluminescence (μ-PL) mapping, focused ion beam (FIB) microscopy, and deep-etching techniques. High-resolution μ-PL images demonstrated that during COD, nonradiative dark line defects (DLDs) originate from the front mirror of the laser and propagate in several branches into the laser perpendicular to the output facet. Furthermore, FIB microscopy identified the epitaxial layers affected by COD, revealing that DLDs are confined to the active region. In addition, deep etching confirmed that these defects have a noncrystalline nature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.55.Cr III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.65.Cf Surface cleaning, etching, patterning

Magnetoelectric emission in a magnetic ferroelectric Er-doped (Ba,Sr)TiO3

Y. Shimada, M. Matsubara, Y. Kaneko, J. P. He, and Y. Tokura

Appl. Phys. Lett. 89, 101112 (2006); http://dx.doi.org/10.1063/1.2347700 (3 pages) | Cited 8 times

Online Publication Date: 7 September 2006

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As the system where both space-inversion and time-reversal symmetries are broken simultaneously, the authors have investigated an Er3+-doped ferroelectric (Ba,Sr)TiO3 single crystal under magnetic field, in which the luminescent magnetic Er3+ ion occupies a noncentrosymmetric site. The k-directional dichroism, termed the optical magnetoelectric (OME) effect, was verified in the mathmath emission (λ ∼ 1.55 μm) by the reversal of magnetic field and spontaneous polarization. The observed nonreciprocity ΔI/I ∼ 0.5% at 3000 Oe implies the possibility of the application of the OME effect to the function of an optical isolator.
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78.20.Ls Magneto-optical effects
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.80.+q Magnetomechanical effects, magnetostriction
78.20.Fm Birefringence
85.70.Sq Magnetooptical devices

Transmission filtering of a waveguide coupled to a stub microresonator

Y. Pennec, B. Djafari-Rouhani, A. Akjouj, J. O. Vasseur, L. Dobrzynski, J. P. Vilcot, M. Beaugeois, M. Bouazaoui, R. Fikri, and J. P. Vigneron

Appl. Phys. Lett. 89, 101113 (2006); http://dx.doi.org/10.1063/1.2345251 (3 pages) | Cited 7 times

Online Publication Date: 7 September 2006

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Using a finite difference time domain method, the authors study the electromagnetic transmission coefficient of a microwaveguide coupled to a lateral stub. It is shown that if the stub is covered with a thin metallic layer, the transmission spectrum contains several very narrow and deep depressions despite the small size of the resonator. The frequencies of the zeros of transmission are studied as a function of the geometrical parameters of the stub. The quality factor of the dips is increased when the waveguide is separated from the stub by a small air gap.
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42.82.Et Waveguides, couplers, and arrays
42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

Determination of junction temperature in AlGaInP/GaAs light emitting diodes by self-excited photoluminescence signal

N. C. Chen, Y. N. Wang, C. Y. Tseng, and Y. K. Yang

Appl. Phys. Lett. 89, 101114 (2006); http://dx.doi.org/10.1063/1.2345587 (3 pages) | Cited 17 times

Online Publication Date: 7 September 2006

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The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP/GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device.
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85.60.Jb Light-emitting devices

Continuous-wave laser oscillation in subsonic flow on the 1315 nm atomic iodine transition pumped by electric discharge produced O2(amath)

Joseph T. Verdeyen, David L. Carroll, Darren M. King, Julia K. Laystrom, Gabriel F. Benavides, Joseph W. Zimmerman, Brian S. Woodard, and Wayne C. Solomon

Appl. Phys. Lett. 89, 101115 (2006); http://dx.doi.org/10.1063/1.2346134 (3 pages) | Cited 18 times

Online Publication Date: 7 September 2006

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Herein the authors report on the demonstration of a continuous-wave laser in subsonic flow on the 1315 nm transition of atomic iodine using the energy transferred to I(math) from O2(amath) produced by a radio-frequency-excited electric discharge. The electric discharge was sustained in an O2HeNO gas mixture. Downstream of the discharge, cold gas injection was employed to raise the gas density and lower the temperature of the continuous gas flow to shift the equilibrium of atomic iodine in favor of the I(math) state. The laser output power was 540 mW in a stable cavity with two 99.993% reflective mirrors.
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42.55.Ks Chemical lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
47.40.Dc General subsonic flows

ZnSe nanowires grown on the crystal surface by femtosecond laser ablation in air

T. Q. Jia, H. X. Chen, M. Huang, X. J. Wu, F. L. Zhao, M. Baba, M. Suzuki, H. Kuroda, J. R. Qiu, R. X. Li, and Z. Z. Xu

Appl. Phys. Lett. 89, 101116 (2006); http://dx.doi.org/10.1063/1.2339202 (3 pages) | Cited 8 times

Online Publication Date: 7 September 2006

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Uniform ZnSe nanowires are observed on the ablation crater on ZnSe crystal surface irradiated by femtosecond lasers in air, while other parts of the sample surface are not polluted. The nanowire growth rate is about 5 μm/s, it is higher than that fabricated by chemical vapor deposition method by a factor of 104. The nanowire length and diameter can be controlled by varying laser pulse energy and pulse number. The formation mechanism is studied and found to be self-catalyzed vapor-liquid-solid process.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
61.46.Hk Nanocrystals
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.65.-b Surface treatments

Diamond photonic band gap synthesis by umbrella holographic lithography

Ovidiu Toader, Timothy Y. M. Chan, and Sajeev John

Appl. Phys. Lett. 89, 101117 (2006); http://dx.doi.org/10.1063/1.2347112 (3 pages) | Cited 19 times

Online Publication Date: 7 September 2006

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The authors demonstrate that optical interference lithography yields diamond photonic band gap (PBG) architectures with PBGs as large as 25% when the exposed photoresist is replicated with silicon. This process utilizes five linearly polarized beams propagating from the same half-space (umbrella configuration), a setup considerably simpler than the widely studied counterpropagating four-beam setup. Using the umbrella configuration, this diamond structure is also achieved by two or more exposures using fewer interfering laser beams.
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42.40.Kw Holographic interferometry; other holographic techniques
42.70.Qs Photonic bandgap materials

Silica nanomachining using laser plasma soft x rays

Tetsuya Makimura, Satoshi Uchida, Kouichi Murakami, and Hiroyuki Niino

Appl. Phys. Lett. 89, 101118 (2006); http://dx.doi.org/10.1063/1.2347117 (3 pages) | Cited 12 times

Online Publication Date: 7 September 2006

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In order to demonstrate silica nanomachining, the authors fabricated line-and-space contact masks with spaces of 53 and 70 nm on silica glass plates, followed by irradiation with laser plasma softx rays (LPSXs) with wavelengths around 10 nm. Trenches with the narrowest width of 54 nm and an aspect ratio of ∼ 1 were fabricated by the LPSX irradiation through the contact masks. It was also clarified that silica glass can be machined by irradiation with LPSXs in the wavelength range of 6–30 nm in Ar gas which was used as an x-ray bandpass filter.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.40.Hp Lithography, masks and pattern transfer

Control of gray scale inversion in a film-compensated twisted nematic liquid crystal display using beam steering optical film

Chi Hyuk Park, Seung Hee Lee, Jinkwan Jeong, Kyoung Jin Kim, and Hyun Chul Choi

Appl. Phys. Lett. 89, 101119 (2006); http://dx.doi.org/10.1063/1.2345248 (3 pages) | Cited 9 times

Online Publication Date: 8 September 2006

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Commercially available, twisted nematic (TN), liquid crystal cells have intrinsic problems such as light leakage in the dark state, gray scale inversion, and brightness nonuniformity in gray scales when the viewing direction deviates from the normal axis. Film compensation of a TN cell has solved the first problem but the second remains unsolved, which has hindered its applications to large displays. This letter proposes the use of a beam steering film to prepare a TN cell free of gray scale inversion in wide viewing directions.
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42.70.Df Liquid crystals
42.79.Kr Display devices, liquid-crystal devices
61.30.-v Liquid crystals

Subnanosecond diode-pumped passively Q-switched Nd:GdVO4 laser with peak power >1 MW

Antonio Agnesi, Federico Pirzio, Giancarlo Reali, and Giuliano Piccinno

Appl. Phys. Lett. 89, 101120 (2006); http://dx.doi.org/10.1063/1.2348741 (3 pages) | Cited 4 times

Online Publication Date: 8 September 2006

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The authors report on a passively Q-switched diode-pumped Nd:GdVO4 miniature laser generating 0.5 mJ pulses at 1063 nm, with 420 ps time duration and 1.2 MW peak power, at a repetition rate up to 200 Hz and with a nearly diffraction-limited beam quality (M2 ≈ 1.1).
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Xi Diode-pumped lasers
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure

Esther Baumann, Fabrizio R. Giorgetta, Daniel Hofstetter, Sylvain Leconte, Fabien Guillot, Edith Bellet-Amalric, and Eva Monroy

Appl. Phys. Lett. 89, 101121 (2006); http://dx.doi.org/10.1063/1.2348759 (3 pages) | Cited 9 times

Online Publication Date: 8 September 2006

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The authors report on electromodulated intersubband (ISB) absorption experiments on AlN/GaN superlattices (SLs) grown on a transistorlike structure. A sample containing five SL periods shows two distinct absorption peaks related to ISB transitions in the SL and in the two dimensional electron gas located at the interface of the lowest SL barrier and the underlying GaN buffer. The ratio of those two absorption peaks can be adjusted by applying an external field, which influences the overall band structure and, more specifically, the free carrier density in the SL. This is a proof of concept of an on-off electro-optical modulator at 1.5 μm.
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42.79.Hp Optical processors, correlators, and modulators
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Free-space quantum key distribution with entangled photons

Ivan Marcikic, Antía Lamas-Linares, and Christian Kurtsiefer

Appl. Phys. Lett. 89, 101122 (2006); http://dx.doi.org/10.1063/1.2348775 (3 pages) | Cited 21 times

Online Publication Date: 8 September 2006

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The authors report on a complete experimental implementation of a quantum key distribution protocol through a free-space link using polarization-entangled photon pairs from a compact parametric downconversion source. Over 10 h of uninterrupted communication between sites 1.5 km apart, they observe average key generation rates of 630/s after error correction and privacy amplification. Their scheme requires no specific hardware channel for synchronization apart from a classical wireless link, and no explicit random number generator.
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03.67.Dd Quantum cryptography and communication security
03.67.Hk Quantum communication
03.67.Mn Entanglement measures, witnesses, and other characterizations
42.50.Dv Quantum state engineering and measurements
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Integrated optics Bragg filters made by ion exchange and wafer bonding

F. Gardillou, L. Bastard, and J.-E. Broquin

Appl. Phys. Lett. 89, 101123 (2006); http://dx.doi.org/10.1063/1.2348777 (3 pages) | Cited 3 times

Online Publication Date: 8 September 2006

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A polarization-insensitive Bragg filter has been realized on a glass substrate thanks to the epoxy-free wafer bonding technique. This device is based on the combined embedding of a corrugated grating and a surface ion-exchanged waveguide, both realized on a silicate glass. With this configuration, the grating patterns are also protected from external degradation of the environment.
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42.79.Ci Filters, zone plates, and polarizers
42.82.Cr Fabrication techniques; lithography, pattern transfer

Pseudoheterodyne detection for background-free near-field spectroscopy

Nenad Ocelic, Andreas Huber, and Rainer Hillenbrand

Appl. Phys. Lett. 89, 101124 (2006); http://dx.doi.org/10.1063/1.2348781 (3 pages) | Cited 40 times

Online Publication Date: 8 September 2006

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The authors present a detection technique for scattering-type near-field optical microscopy capable of background interference elimination in the entire near-UV to far-IR spectral range. It simultaneously measures near-field optical signal amplitude and phase by interferometric detection of scattered light utilizing a phase-modulated reference wave. They compare its background suppression efficiency to other known methods and experimentally show that it provides a reliable near-field optical material contrast even in the case where both noninterferometric and homodyne interferometric detection methods fail.
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07.79.Fc Near-field scanning optical microscopes
07.60.Pb Conventional optical microscopes
07.60.Rd Visible and ultraviolet spectrometers
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Ly Interferometers
85.60.Gz Photodetectors (including infrared and CCD detectors)

Low-threshold and continuously tunable Yb:Gd2SiO5 laser

Wenxue Li, Qiang Hao, Hui Zhai, Heping Zeng, Wei Lu, Guangjun Zhao, Chengfeng Yan, Liangbi Su, and Jun Xu

Appl. Phys. Lett. 89, 101125 (2006); http://dx.doi.org/10.1063/1.2349281 (3 pages) | Cited 9 times

Online Publication Date: 8 September 2006

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Yb:Gd2SiO5 (Yb:GSO) exhibits a large fundamental manifold splitting. Its long-wavelength emission band around 1088 nm, which has the largest emission cross section, encounters the lowest reabsorption losses caused by thermal population of the terminal laser level. As a result, low-threshold and tunable continuous-wave Yb:GSO lasers were demonstrated. A slope efficiency up to 86% and a pumping threshold as low as 127 mW were achieved for a continuous-wave Yb:GSO laser at 1092.5 nm under the pump of a high-brightness laser diode. A continuous tunability between 1000 and 1120 nm was realized with an SF14 prism as the intracavity tuning element.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Xi Diode-pumped lasers
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Bh Lenses, prisms and mirrors
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