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4 Sep 2006

Volume 89, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 89, 103101 (2006); http://dx.doi.org/10.1063/1.2345352 (3 pages)

F. Hao and P. Nordlander
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Lithium manganese oxide as an effective buffer layer between organic and metal layers in organic light-emitting devices

Tswen-Hsin Liu

Appl. Phys. Lett. 89, 102101 (2006); http://dx.doi.org/10.1063/1.2339028 (3 pages) | Cited 2 times

Online Publication Date: 5 September 2006

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Tris(8-hydroxyquinolinato)aluminum (Alq3)-based organic light-emitting devices using a thermally deposited lithium manganese oxide layer between aluminum (Al) cathode and Alq3 have been fabricated. The highest luminance efficiency obtained with a 1-nm-thick LiMnxOy layer is very similar to that of the device with 1-nm-thick LiF. However, the device with an 18 nm LiMnxOy layer obtained a longer operational stability although the luminance efficiency is lower. The improvements are attributed to lithium extractions of the lithium manganese oxide layer and the interfacial properties between Alq3 and Al are discussed.
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85.60.Jb Light-emitting devices

Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

M. Furis, D. L. Smith, S. A. Crooker, and J. L. Reno

Appl. Phys. Lett. 89, 102102 (2006); http://dx.doi.org/10.1063/1.2345608 (3 pages) | Cited 14 times

Online Publication Date: 5 September 2006

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In bulk n-GaAs epilayers doped near the metal-insulator transition, the authors study the evolution of electron spin lifetime τs as a function of applied lateral electrical bias Ex. τs is measured via the Hanle effect using magneto-optical Kerr rotation. At low temperatures (T<10 K, where electrons are partially localized and τs>100 ns at zero bias), a marked collapse of τs is observed when Ex exceeds the donor impact ionization threshold at ∼ 10 V/cm. A steep increase in the concentration of warm delocalized electrons—subject to Dyakonov-Perel spin relaxation [ Sov. Phys. Solid State 13, 3023 (1972) ]—accounts for the rapid collapse of τs and strongly influences electron spin transport in this regime.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.25.Dc Spin polarized transport in semiconductors
72.80.Ey III-V and II-VI semiconductors
72.20.Ht High-field and nonlinear effects
72.60.+g Mixed conductivity and conductivity transitions
78.20.Ls Magneto-optical effects

Electronic memory effects in diodes from a zinc oxide nanoparticle-polystyrene hybrid material

Frank Verbakel, Stefan C. J. Meskers, and René A. J. Janssen

Appl. Phys. Lett. 89, 102103 (2006); http://dx.doi.org/10.1063/1.2345612 (3 pages) | Cited 52 times

Online Publication Date: 5 September 2006

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Current-voltage characteristics of diode structures with an active layer of a zinc oxide nanoparticle-polystyrene hybrid material (1:2 by weight) deposited by spin coating from solution were investigated. Aluminum and poly(3,4-ethylenedioxythiophene):polystyrene-sulfonate were used as electrodes. After a forming step, the conduction under reversed bias voltage can be raised or lowered in a gradual and reversible manner by applying forward and reverse bias voltages, respectively. Electrically induced switching between states with high and lower conductivities is possible on a time scale of 100 ms and the conduction levels remain stable for over 1 h.
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84.30.Sk Pulse and digital circuits
85.30.-z Semiconductor devices

Formation of p-type MgZnO by nitrogen doping

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang

Appl. Phys. Lett. 89, 102104 (2006); http://dx.doi.org/10.1063/1.2345846 (3 pages) | Cited 29 times

Online Publication Date: 5 September 2006

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A wurtzite N-doped MgZnO film with 20 at. % Mg (MgZnO:N) was grown by plasma-assisted molecular beam epitaxy on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown MgZnO:N film behaves n-type conduction at room temperature, but transforms into p-type conduction after annealed for 1 h at 600 °C in an O2 flow. The p-type MgZnO:N has a hole concentration of 6.1×1017 cm−3 and a mobility of 6.42 cm2/V s. X-ray photoelectron spectroscopy measurement indicates that substitution of N for O site is in forms of N atom (N)O and N molecule (N2)O for the as-grown MgZnO:N, but almost only in a form of (N)O for the annealed MgZnO:N. The mechanism of the conduction-type transition induced by annealing is discussed in the present work.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ga II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.A- Nucleation and growth
72.20.Fr Low-field transport and mobility; piezoresistance
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.Cc Kinetics of defect formation and annealing

Critical nickel thickness to form silicide transrotational structures on [001] silicon

Alessandra Alberti, Corrado Bongiorno, Emanuele Rimini, and Maria Grazia Grimaldi

Appl. Phys. Lett. 89, 102105 (2006); http://dx.doi.org/10.1063/1.2338019 (3 pages) | Cited 10 times

Online Publication Date: 6 September 2006

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The effect of the sputtered Ni layer thickness (7–14 nm) on the silicide phase transition was studied at 260 °C. In 7-nm-thick layers, the complete mixing of Ni and Si occurring during deposition produces stable Ni2Si transrotational structures which further evolve into similar NiSi domains within 50 min of annealing. In 14-nm-thick layers, the residual unmixed Ni atoms diffuse towards the interface and speed up the transition from Ni2Si to NiSi (25 min) by promoting the nucleation of polycrystaline NiSi grains. A competition between NiSi trans- and poly-structures occurs, and the resulting layer morphology depends on the reaction temperature.
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64.70.K- Solid-solid transitions
81.15.Cd Deposition by sputtering
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
64.60.Q- Nucleation
61.46.Hk Nanocrystals

Direct-bonded GaAs/InGaAs tandem solar cell

Katsuaki Tanabe, Anna Fontcuberta i Morral, Harry A. Atwater, Daniel J. Aiken, and Mark W. Wanlass

Appl. Phys. Lett. 89, 102106 (2006); http://dx.doi.org/10.1063/1.2347280 (3 pages) | Cited 15 times

Online Publication Date: 6 September 2006

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A direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-mismatched epitaxial heterostructure growth. The bonded interface is a metal-free n+GaAs/n+InP tunnel junction. The tandem cell open-circuit voltage is approximately the sum of the subcell open-circuit voltages. The internal quantum efficiency is 0.8 for the GaAs subcell compared to 0.9 for an unbonded GaAs subcell near the band gap energy and is 0.7 for both of the InGaAs subcell and an unbonded InGaAs subcell, with bonded and unbonded subcells similar in spectral response.
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84.60.Jt Photoelectric conversion
85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.20.Nr Semiconductor compounds

Structural properties of Ge2Sb2Te5 thin films by metal organic chemical vapor deposition for phase change memory applications

Ran-Young Kim, Ho-Gi Kim, and Soon-Gil Yoon

Appl. Phys. Lett. 89, 102107 (2006); http://dx.doi.org/10.1063/1.2338586 (3 pages) | Cited 18 times

Online Publication Date: 6 September 2006

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Ge2Sb2Te5 (GST) films were deposited on TiN(50 nm)/SiO2/Si substrates and trench structures of TiAlN(100 nm)/Si with various deposition parameters by metal organic chemical vapor deposition (MOCVD). Hexagonal GST films were deposited at temperatures of 330–370 °C, deposition pressure of 40 Torr, bubbling temperatures of Ge(50 °C), Sb(10 °C), and Te(30 °C) precursors. Germanium incorporation into GST films by MOCVD is sensitively influenced by deposition parameters such as deposition pressure, deposition temperature, and bubbling temperatures of precursors. Trench structures with a diameter of 120 nm and a height of 200 nm are completely filled by GST MOCVD.
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68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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