APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Sep 2006

Volume 89, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 103101 (2006); http://dx.doi.org/10.1063/1.2345352 (3 pages)

F. Hao and P. Nordlander
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Role of strain in the blistering of hydrogen-implanted silicon

Jung-Kun Lee, Yuan Lin, Q. X. Jia, Tobias Höchbauer, Hyun Suk Jung, Lin Shao, Amit Misra, and Michael Nastasi

Appl. Phys. Lett. 89, 101901 (2006); http://dx.doi.org/10.1063/1.2345245 (3 pages) | Cited 7 times

Online Publication Date: 5 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors investigated the physical mechanisms underlying blistering in hydrogen-implanted silicon by examining the correlation between implantation induced damage, strain distribution, and vacancy diffusion. Using Rutherford backscattering, scanning electron microscopy, and atomic force microscopy, they found that the depth of blisters coincided with that of maximum implantation damage. A model based on experimental results is presented showing the effect of tensile strain on the local diffusion of vacancies toward the depth of maximum damage, which promotes the nucleation and growth of platelets and ultimately blisters.
Show PACS
61.72.J- Point defects and defect clusters
71.55.Cn Elemental semiconductors
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
66.30.Lw Diffusion of other defects

Photostimulated luminescence from BaCl2:Eu2+ nanocrystals in lithium borate glasses following neutron irradiation

G. A. Appleby, A. Edgar, G. V. M. Williams, and A. J. J. Bos

Appl. Phys. Lett. 89, 101902 (2006); http://dx.doi.org/10.1063/1.2335807 (3 pages) | Cited 3 times

Online Publication Date: 5 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A glass-ceramic thermal neutron imaging plate material is reported. The material consists of a neutron sensitive 2B2O3–Li2O glass matrix containing nanocrystallites of the storage phosphor BaCl2:Eu2+. When doped with 0.5 mol % Eu2+, the neutron induced photostimulated luminescence (PSL) conversion efficiency of the math enriched glass-ceramic is around 60% of that a commercial neutron imaging plate, while the γ sensitivity is an order of magnitude lower than that of the commercial plate. A Eu2+-concentration series shows that the PSL efficiency for x rays is optimized at 0.01 mol % Eu2+. Thermoluminescence measurements indicate trap depths in BaCl2:Eu2+ ranging from 0.55 to 2.7 eV.
Show PACS
78.55.Hx Other solid inorganic materials
78.60.Kn Thermoluminescence
61.80.Hg Neutron radiation effects

Rubberlike entropy elasticity of a glassy alloy

M. Fukuhara, A. Inoue, and N. Nishiyama

Appl. Phys. Lett. 89, 101903 (2006); http://dx.doi.org/10.1063/1.2345260 (3 pages) | Cited 10 times

Online Publication Date: 5 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report observations of thermal-induced entropy elasticity and the Gough-Joule effect for a glassy alloy, Pd40Cu30Ni10P20, in terms of acoustoelasticity. Seven kinds of elastic parameters of the glassy alloy have been simultaneously measured as a function of temperature ranging from 298 to 673 K. The decrease in elastic moduli and Poisson’s ratio and the increase in tension below the second-order-like phase transition temperature suggest rubberlike thermal dynamic micro-Brownian stretching, described as F(Pa) = 0.282T+562, which may be associated with the rotational and vibrational motions of polyhedron clusters.
Show PACS
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
61.43.Fs Glasses
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates

J. W. Shin, J. Y. Lee, Y. S. No, T. W. Kim, and W. K. Choi

Appl. Phys. Lett. 89, 101904 (2006); http://dx.doi.org/10.1063/1.2338792 (3 pages) | Cited 7 times

Online Publication Date: 5 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates was investigated by using high-resolution transmission electron microscopy (HRTEM) measurements. The HRTEM images showed three symmetric grain boundaries and one asymmetric grain boundary around the triple junction in the ZnO film. The correlation between the atomic structures and the misorientation angles of the grain boundaries at triple junctions in ZnO films is described on the basis of the HRTEM results.
Show PACS
68.55.-a Thin film structure and morphology
61.72.Mm Grain and twin boundaries

Structure and optical properties of Lu2SiO5:Ce phosphor thin films

J.-K. Lee, R. E. Muenchausen, Jang-Sik Lee, Q. X. Jia, M. Nastasi, J. A. Valdez, B. L. Bennett, D. W. Cooke, and Sang Yeol Lee

Appl. Phys. Lett. 89, 101905 (2006); http://dx.doi.org/10.1063/1.2345373 (3 pages) | Cited 17 times

Online Publication Date: 5 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Luminescent, cerium doped Lu2SiO5 thin films with C2/c symmetry have been prepared by pulsed laser deposition (PLD) at temperatures much lower than the crystallization temperature (2150 °C) of the corresponding bulk crystals. The PLD grown films show the typical luminescence resulting from the Ce3+ 5d-4f transition. Maximum luminescence efficiency was observed for films prepared at an oxygen partial pressure of 200 mTorr at 600 °C. These conditions reflect a balance between Ce4+/Ce3+ interconversion and the crystalline quality of the films. The results indicate that PLD offers a low temperature deposition technique for complex oxide phosphor materials.
Show PACS
78.55.Hx Other solid inorganic materials
42.70.-a Optical materials
68.55.-a Thin film structure and morphology
78.66.Nk Insulators
81.15.Fg Pulsed laser ablation deposition
64.70.D- Solid-liquid transitions

Current density dependence of electromigration-induced flip-chip Cu pad consumption

C. T. Lin, Y. C. Chuang, S. J. Wang, and C. Y. Liu

Appl. Phys. Lett. 89, 101906 (2006); http://dx.doi.org/10.1063/1.2344857 (3 pages) | Cited 7 times

Online Publication Date: 5 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Current density dependence on the mechanism of the electromigration-induced flip-chip Cu pad consumption was observed. A critical current density was determined, which defines the consumption mechanism of Cu pad. Below this critical current density, a constant interfacial compound layer would be established. The mechanism whereby the Cu pad is consumed is the dissolution of the interfacial Cu–Sn compound. Above the critical current density, the interfacial compound layer continues to grow over time. The consumption of the Cu pad was then primary controlled by the total Cu flux in the interfacial Cu–Sn compound layer.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation

Surface plasmon polariton mediated photoluminescence from excitons in silicon nanocrystals

Eiji Takeda, Toshihiro Nakamura, Minoru Fujii, Satoru Miura, and Shinji Hayashi

Appl. Phys. Lett. 89, 101907 (2006); http://dx.doi.org/10.1063/1.2345261 (3 pages) | Cited 9 times

Online Publication Date: 6 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Surface plasmon polaritons (SPPs) of a metal film can efficiently be excited when a light emitter is placed nearby. The excited SPPs are converted to photons by compensating for the momentum mismatch. The authors study SPP-mediated emission from excitons in Si nanocrystals (Si-nc’s) by placing an organic grating on a thin Au film placed near Si-nc’s. The dispersion relation is obtained from angle-resolved photoluminescence measurements, and all the observed modes are well explained by model calculation. The results indicate that excitons in Si-nc’s can efficiently excite SPPs in thin metal films and directed photoluminescence can be realized.
Show PACS
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
78.68.+m Optical properties of surfaces
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
71.35.Gg Exciton-mediated interactions

Local structure of luminescent InGaN alloys

V. Kachkanov, K. P. O’Donnell, R. W. Martin, J. F. W. Mosselmans, and S. Pereira

Appl. Phys. Lett. 89, 101908 (2006); http://dx.doi.org/10.1063/1.2346172 (3 pages) | Cited 4 times

Online Publication Date: 6 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In–Ga and Ga–In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9<x<0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.
Show PACS
78.55.Cr III-V semiconductors
78.70.Dm X-ray absorption spectra
78.66.Hf II-VI semiconductors

Thermal quenching mechanism of photoluminescence in 1.55 μm GaInNAsSb/Ga(N)As quantum-well structures

H. D. Sun, S. Calvez, M. D. Dawson, J. A. Gupta, G. C. Aers, and G. I. Sproule

Appl. Phys. Lett. 89, 101909 (2006); http://dx.doi.org/10.1063/1.2345240 (3 pages) | Cited 10 times

Online Publication Date: 7 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5–1.55 μm at room temperature and whose design is such that the quantum wells have nominally identical valence band profiles but show different confinement depth in the conduction band. The photoluminescence quenching at high temperature demonstrates a thermal activation energy independent of the conduction band offset and can be most plausibly attributed to the unipolar thermalization of holes from the quantum wells to the barriers. This effect will intrinsically limit the flexibility of heterostructure design using GaInNAs(Sb), as it would for any other material system with small valence band offset.
Show PACS
78.67.De Quantum wells
78.55.Cr III-V semiconductors
73.20.At Surface states, band structure, electron density of states

Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness

L. T. Tan, R. W. Martin, K. P. O’Donnell, and I. M. Watson

Appl. Phys. Lett. 89, 101910 (2006); http://dx.doi.org/10.1063/1.2345246 (3 pages) | Cited 17 times

Online Publication Date: 7 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered.
Show PACS
78.67.De Quantum wells
78.55.Cr III-V semiconductors
63.20.kk Phonon interactions with other quasiparticles
71.35.-y Excitons and related phenomena

Magnetically controlled high damping in ferromagnetic Ni52Mn24Ga24 single crystal

W. H. Wang, G. D. Liu, and G. H. Wu

Appl. Phys. Lett. 89, 101911 (2006); http://dx.doi.org/10.1063/1.2345462 (3 pages) | Cited 2 times

Online Publication Date: 7 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An unusually high damping peak of 20% has been observed in Ni52Mn24Ga24 single crystals accompanying with martensitic transformation. The high damping capacity can be retained in the low-temperature martensite phase when a bias field of 0.4 T was applied along the measurement direction. The magnetically controlled high damping and adjustable martensitic-austenitic transformation temperature indicate a great potential of using Ni–Mn–Ga alloys as high damping or energy absorbing materials in a wide temperature range.
Show PACS
75.50.Cc Other ferromagnetic metals and alloys
81.30.Kf Martensitic transformations
64.70.K- Solid-solid transitions
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Resonant Raman scattering with the E+ band in a dilute GaAs1−xNx alloy (x = 0.1%)

P. H. Tan, Z. Y. Xu, X. D. Luo, W. K. Ge, Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 89, 101912 (2006); http://dx.doi.org/10.1063/1.2345605 (3 pages)

Online Publication Date: 7 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Resonant Raman scattering has been applied to a dilute GaAs1−xNx alloy with 0.1% N. The Raman lines of GaAs and GaN related modes, their combinations, and multiple order replicas of GaAs-like longitudinal-optical modes have been observed with a lower N composition than those studied previously. All these Raman features are found to be strongly enhanced with excitations in resonance with a broad photoluminescence band that is associated with the so-called E+ transition. This study provides additional insights into how the GaAs host conduction band states are perturbed and thus the electron-phonon interaction is affected by the N doping.
Show PACS
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
71.20.Nr Semiconductor compounds
63.20.K- Phonon interactions
61.72.uf Ge and Si

Low-temperature fabrication and characterization of Ge-on-insulator structures

C.-Y. Yu, C.-Y. Lee, C.-H. Lin, and C. W. Liu

Appl. Phys. Lett. 89, 101913 (2006); http://dx.doi.org/10.1063/1.2347116 (3 pages) | Cited 6 times

Online Publication Date: 7 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ge-on-insulator structures have been fabricated by wafer bonding and layer transfer techniques. Ultralow bonding temperatures of 150–300 °C are employed in order to suppress hydrogen outdiffusion and to produce a low defect density, in an attempt to produce high photocurrent and photoresponse. Thus reducing the hydrogen outdiffusion results in decreased surface roughness. A low defect density is suggested by a low inversion-current leakage of the tunnel diodes. The photoresponse of the Ge-on-insulator detector is also found to increase with decreasing bonding temperature, indicating that defects caused by hydrogen implantation are passivated more effectively.
Show PACS
85.30.Tv Field effect devices
85.40.Sz Deposition technology

Structure and negative thermal expansion in the PbTiO3–BiFeO3 system

J. Chen, X. R. Xing, G. R. Liu, J. H. Li, and Y. T. Liu

Appl. Phys. Lett. 89, 101914 (2006); http://dx.doi.org/10.1063/1.2347279 (3 pages) | Cited 27 times

Online Publication Date: 7 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The structures of (1−x)PbTiO3–xBiFeO3 (x = 0.3 and 0.6) were investigated by means of the neutron powder diffraction. A splitting shift between Fe and Ti atoms was found along the c axis in 0.7PbTiO3–0.3BiFeO3; however, this splitting does not appear in 0.4PbTiO3–0.6BiFeO3. The tetragonal phase of PbTiO3–BiFeO3 exhibits a large spontaneous polarization. The negative thermal expansion of PbTiO3 is significantly enhanced in a wide temperature range by the BiFeO3 substitution. The average bulk thermal expansion coefficient of 0.4PbTiO3–0.6BiFeO3 is mathv = −3.92×10−5 °C−1, which is much strong in the known negative thermal expansion oxides.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
65.40.De Thermal expansion; thermomechanical effects
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization

Fe-based bulk glassy alloy composite containing in situ formed α-(Fe,Co) and (Fe,Co)23B6 microcrystalline grains

Baolong Shen, He Men, and Akihisa Inoue

Appl. Phys. Lett. 89, 101915 (2006); http://dx.doi.org/10.1063/1.2348737 (3 pages) | Cited 16 times

Online Publication Date: 8 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on an {[(Fe0.5Co0.5)0.75B0.2Si0.05]96Nb4}99.75Cu0.25 bulk glassy alloy (BGA) composite containing in situ formed α-(Fe,Co) and fcc-(Fe,Co)23B6 microcrystalline grains produced by copper mold casting. By adding 0.25 at. % Cu exhibiting positive mixing enthalpy with Fe, α-(Fe,Co) and fcc-(Fe,Co)23B6 phases with a grain size of 3 μm precipitated from the melt during casting, yielding an in situ Fe-based BGA composite. The resulting Fe-based BGA composite shows not only a superhigh fracture strength of 4050 MPa but also distinguished yielding combined with an enhanced plastic strain of 0.6% to failure in a compression relative to the [(Fe0.5Co0.5)0.75B0.2Si0.05]96Nb4 single-phase BGA.
Show PACS
81.10.Fq Growth from melts; zone melting and refining
61.43.Fs Glasses
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Lm Deformation, plasticity, and creep
62.20.M- Structural failure of materials
62.20.F- Deformation and plasticity

Anisotropy measurements in metal alloys using a laser/electromagnetic acoustic transducer array system

B. Dutton and R. J. Dewhurst

Appl. Phys. Lett. 89, 101916 (2006); http://dx.doi.org/10.1063/1.2348758 (3 pages) | Cited 1 time

Online Publication Date: 8 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Rayleigh waves have been used to measure anisotropy in metal alloys using a transient Rayleigh pulse and an eight-element electromagnetic acoustic transducer array. The array spacing determined sensor separation, so that velocity measurements were made independent of the source-to-detector distance. Elimination of this distance, which would normally lead to systematic errors, has resulted in a measurement system capable of measuring velocities in metal to an uncertainty of 0.1%. As an example, variations in the Rayleigh velocity have characterized the anisotropy in rolled bars of aluminum.
Show PACS
43.58.Dj
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
43.38.Dv
43.38.Hz

Optical transmission larger than 1 (T>1) through ZnS–SiO2/AgOx/ZnS–SiO2 sandwiched thin films

Jingsong Wei and Mufei Xiao

Appl. Phys. Lett. 89, 101917 (2006); http://dx.doi.org/10.1063/1.2348774 (3 pages)

Online Publication Date: 8 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Optical transmission through flat media should be smaller than 1. However, we have observed optical transmission up to T = 1.18. The samples were ZnS–SiO2/AgOx/ZnS–SiO2 sandwiched thin films on glass substrate. The supertransmission could only be observed in the near field. We attribute the supertransmission to the lateral propagation relayed by the laser activated and decomposed Ag nanoparticles.
Show PACS
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.70.-a Optical materials
68.65.Ac Multilayers
81.15.Cd Deposition by sputtering

Uniaxial tensile plastic deformation of a bulk nanocrystalline alloy studied by a high-energy x-ray diffraction technique

G. J. Fan, L. F. Fu, Y. D. Wang, Y. Ren, H. Choo, P. K. Liaw, G. Y. Wang, and N. D. Browning

Appl. Phys. Lett. 89, 101918 (2006); http://dx.doi.org/10.1063/1.2348783 (3 pages) | Cited 13 times

Online Publication Date: 8 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By employing a high-energy x-ray diffraction technique, the authors report that uniaxial tensile plastic deformation induced the grain growth and texture development in a bulk nanocrystalline Ni–Fe alloy. The effects become more pronounced with increasing the plastic strain (closer to the fracture surface). The texture development accompanying the grain rotation indicates that dislocation motion contributed to the observed plasticity in the nanocrystalline Ni–Fe alloy. The quantitative experimental data suggest that the dislocation storage was absent in the uniformly deforming region; whereas the dislocation storage was present in the necking region, where the grain growth was substantial.
Show PACS
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
66.30.Lw Diffusion of other defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Grazing-incidence x-ray diffraction study of pentacene thin films with the bulk phase structure

Hiroyuki Yoshida and Naoki Sato

Appl. Phys. Lett. 89, 101919 (2006); http://dx.doi.org/10.1063/1.2349307 (3 pages) | Cited 20 times

Online Publication Date: 8 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The structure of pentacene thin films in the bulk phase having interplane spacing of d(001) = 1.44 nm grown on SiO2 was investigated using grazing-incidence x-ray diffraction. The films were prepared with two different methods: one treated with an organic solvent after vacuum deposition and the other thermally treated. Both films are similar in structure to the single crystal reported by Campbell et al. [Acta Crystallogr. 15, 289 (1962)] .
Show PACS
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Gh Other heat and thermomechanical treatments

Luminescence efficiency at 1.5 μm of Er-doped thick SiO layers and Er-doped SiO/SiO2 multilayers

G. Wora Adeola, O. Jambois, P. Miska, H. Rinnert, and M. Vergnat

Appl. Phys. Lett. 89, 101920 (2006); http://dx.doi.org/10.1063/1.2349316 (3 pages) | Cited 8 times

Online Publication Date: 8 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The luminescence from Er-doped thin films is studied in two different systems. The first one is a SiO single layer. The second one is a SiO/SiO2 multilayer allowing us to obtain size-controlled silicon nanocrystals. In both systems, the annealing-temperature dependence of the luminescence is investigated. It is shown that the optimal annealing temperatures are equal to 700 and 1050 °C for the single layer and the multilayer, respectively. Moreover the luminescence efficiency at 1.5 μm is one order of magnitude higher in the single Er-doped SiO layer. These results are discussed in relation to the formation of silicon nanoparticles with annealing treatments.
Show PACS
78.55.Hx Other solid inorganic materials
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
81.40.Gh Other heat and thermomechanical treatments
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers

A. Bernardi, M. I. Alonso, A. R. Goñi, J. O. Ossó, and M. Garriga

Appl. Phys. Lett. 89, 101921 (2006); http://dx.doi.org/10.1063/1.2349317 (3 pages) | Cited 12 times

Online Publication Date: 8 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors show that by deposition of 0.1 ML of carbon prior to the self-assembled growth of Ge quantum dots on a strained Si1−xGex buffer layer a striking decrease in dot density by two orders of magnitude from about 1011 to 109 cm−2 occurs when the Ge content of the buffer layer increases from 0% to 64%. Their results give experimental evidence for a kinetically limited growth mechanism in which Ge adatom mobility is determined by chemical interactions among C, Si, and Ge. Thus, by adjusting the Ge content of the SiGe buffer layer onto which a carbon submonolayer is deposited they are able to fine tune the density of the carbon-induced Ge quantum dots.
Show PACS
81.16.Dn Self-assembly
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close