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18 Sep 2006

Volume 89, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 121104 (2006); http://dx.doi.org/10.1063/1.2354411 (3 pages)

M. M. de Lima, M. Beck, R. Hey, and P. V. Santos
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Continuous-wave diode-pumped Yb:glass laser with near 90% slope efficiency

D. Jaque, J. C. Lagomacini, C. Jacinto, and T. Catunda

Appl. Phys. Lett. 89, 121101 (2006); http://dx.doi.org/10.1063/1.2345828 (3 pages) | Cited 13 times

Online Publication Date: 18 September 2006

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Room temperature highly efficient laser action from an ytterbium-doped phosphate glass is demonstrated when end pumped by a 975 nm fiber-coupled laser diode. Laser slope efficiencies as high as 88% have been obtained, leading to pump-to-laser conversion efficiencies greater than 50%. From the analysis of pumping threshold and laser slope efficiencies the authors have determined both the optical losses and emission cross section at laser wavelength (1028 nm).
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.70.Ce Glasses, quartz
42.70.Hj Laser materials

UV photoimprinting of channel waveguides on active SiO2GeO2 sputtered thin films

G. Nunzi Conti, S. Berneschi, M. Brenci, S. Pelli, S. Sebastiani, G. C. Righini, C. Tosello, A. Chiasera, and M. Ferrari

Appl. Phys. Lett. 89, 121102 (2006); http://dx.doi.org/10.1063/1.2355472 (3 pages) | Cited 3 times

Online Publication Date: 18 September 2006

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We report on direct UV photoimprinting of channel waveguides on sputtered 75SiO2–25GeO2 (mol %) thin films doped with erbium and ytterbium. The films, after annealing, constitute good-quality slab waveguides, single mode at 1550 nm. UV exposure through an amplitude mask defines channel waveguides. We show that the index change distribution in the channel can be simply related to the UV induced densification profile. Propagation losses are less than 0.3 dB/cm at 1300 nm for both planar and channel waveguides. The fabrication procedure is simpler and cheaper than conventional technologies, so it represents a convenient way for the fabrication of low loss active optical integrated circuits.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Variable phase-contrast fluorescence spectrometry for fluorescently stained cells

Yusuke Inoue, Ichirou Ishimaru, Toshiki Yasokawa, Katsumi Ishizaki, Makoto Yoshida, Masahiko Kondo, Shigeki Kuriyama, Tsutomu Masaki, Seiji Nakai, Kaoru Takegawa, and Naotaka Tanaka

Appl. Phys. Lett. 89, 121103 (2006); http://dx.doi.org/10.1063/1.2356312 (3 pages) | Cited 5 times

Online Publication Date: 18 September 2006

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This letter describes the spectroscopic measurements of fluorescently stained cells. Variable phase-contrast fluorescence spectrometry was used on fluorescently stained cells to achieve high two-dimensional spatial resolution. Phase shift interferometry by autocorrelation interference made it possible to measure fluorescence spectra in the field of view without the separation of wavelengths, as in the case of a conventional dispersive spectrometer. In this letter, the authors describe the experimental characteristics of fluorescence spectra generated from fluorescently stained cells and verify that the fluorescence spectra of the stained area in the cells can be measured by our method.
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87.63.L- Visual imaging
87.64.K- Spectroscopy
87.17.-d Cell processes
42.87.Bg Phase shifting interferometry

Compact Mach-Zehnder acousto-optic modulator

M. M. de Lima, M. Beck, R. Hey, and P. V. Santos

Appl. Phys. Lett. 89, 121104 (2006); http://dx.doi.org/10.1063/1.2354411 (3 pages) | Cited 11 times

Online Publication Date: 19 September 2006

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The authors demonstrate a compact optical waveguide modulator based on a Mach-Zehnder interferometer driven by surface acoustic waves. The modulator was monolithically fabricated on GaAs with an active region length of approximately 15 μm. It yields peak-to-peak modulation exceeding 90% of the average transmission and operation in the gigahertz frequency range.
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42.79.Jq Acousto-optical devices
42.79.Hp Optical processors, correlators, and modulators
07.60.Ly Interferometers
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

Highly efficient liquid crystal based diffraction grating induced by polarization holograms at the aligning surfaces

C. Provenzano, P. Pagliusi, and G. Cipparrone

Appl. Phys. Lett. 89, 121105 (2006); http://dx.doi.org/10.1063/1.2355456 (3 pages) | Cited 32 times

Online Publication Date: 19 September 2006

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Low-scattering and highly efficient orientational gratings are obtained, exploiting polarization holography to modulate the in-plane anchoring axis at both surfaces of a planar nematic cell. Polarization-sensitive azo-dye-doped polyimide films are used as aligning layers. For proper values of cell thickness and spatial periodicity of the gratings, the director configuration in the nematic bulk is a perfect replica of the polarization gratings recorded on the aligning layers. High first-order diffraction efficiency, up to 98%, is observed in thin grating regime. External ac voltage allows to adjust the efficiency over the whole range for arbitrary cell thickness.
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42.40.Eq Holographic optical elements; holographic gratings
42.70.Df Liquid crystals
61.30.-v Liquid crystals

Transmission characteristics of metallic equilateral triangular nanohole arrays

Je Hong Kim and Patrick J. Moyer

Appl. Phys. Lett. 89, 121106 (2006); http://dx.doi.org/10.1063/1.2355468 (3 pages) | Cited 12 times

Online Publication Date: 19 September 2006

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Transmission spectra through arrays of equilateral triangular nanoapertures show significant transmission increases for most conditions when normalized to the area ratio and compared to those of circular and square apertures. Also, the spectral features of the triangular holes are occasionally shifted when viewed with circular and square arrays of the same periodicity. The authors note that for apertures of the same area, the circumference of a triangular hole is about 75% larger than that of a square hole and about 100% larger than that of a circular hole, indicating that the perimeter region of the apertures may play a larger role in the transmission characteristics of nanoholes than has previously been noted. The authors suggest that the corresponding increase in metal surface area inside the apertures leads to a larger role played by the plasmon which is supported inside the apertures. The authors also suggest that the periodicity of the aperture arrays leads to diffraction effects which also affect the complex spectral characteristics of the transmitted light. Finally, for very small holes (less than 100 nm in diameter), the significance of the triangular shape is diminished.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Polarization-discriminated spectra of a fiber-microsphere system

Hidenori Konishi, Hideki Fujiwara, Shigeki Takeuchi, and Keiji Sasaki

Appl. Phys. Lett. 89, 121107 (2006); http://dx.doi.org/10.1063/1.2355473 (3 pages) | Cited 10 times

Online Publication Date: 19 September 2006

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Polarization-discriminated spectra of a fiber-microsphere system were acquired. The authors have succeeded in developing a single-mode tapered fiber capable of maintaining the polarization of the probe beam. The spectra acquired from this system discriminated between transverse electric and transverse magnetic modes.
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42.81.Gs Birefringence, polarization

Growth and characterization of single crystal ZnO thin films using inductively coupled plasma metal organic chemical vapor deposition

J.-H. Park, S.-J. Jang, S.-S. Kim, and B.-T. Lee

Appl. Phys. Lett. 89, 121108 (2006); http://dx.doi.org/10.1063/1.2356075 (3 pages) | Cited 15 times

Online Publication Date: 19 September 2006

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Zinc oxide thin films were grown on sapphire substrates by metal organic chemical vapor deposition technique. Single crystal films with flat and smooth surfaces were reproducibly obtained, with application of sample bias and O2 inductively coupled plasma (ICP). At the growth condition of 650 °C, 400 W ICP power, −94 V bias voltage and O/Zn ratio of 75, full width at half maximum values of room temperature photoluminescence and high-resolution x-ray diffraction were measured to be 126 meV and 269 arc sec, respectively. It was proposed that application of sample bias provided reactant ions with kinetic energy, which promoted formation of single crystalline films.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Dz II-VI semiconductors
68.55.A- Nucleation and growth
52.77.Dq Plasma-based ion implantation and deposition
78.55.Et II-VI semiconductors

Thermal behavior of random lasing in dye doped nematic liquid crystals

S. Ferjani, V. Barna, A. De Luca, C. Versace, N. Scaramuzza, R. Bartolino, and G. Strangi

Appl. Phys. Lett. 89, 121109 (2006); http://dx.doi.org/10.1063/1.2356087 (3 pages) | Cited 5 times

Online Publication Date: 19 September 2006

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The role of the thermally modulated order parameter in the diffusive laser action observed in dye doped nematic liquid crystals was investigated. Above a given pump energy a randomly distributed series of bright tiny spots appear, giving rise to a strongly fluctuating emission pattern. The spectral analysis reveals discrete sharp peaks (about 0.5 nm) slightly blueshifted with respect to the highest efficiency region of the gain medium. A comparative study was performed in systems having different sizes and confining geometries, corroborating the idea that the random lasing observed in dye doped nematic phase is fluctuation driven through a recurrent multiple scattering process.
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42.55.Mv Dye lasers
42.60.-v Laser optical systems: design and operation
42.70.Hj Laser materials

Terahertz beating of laser emission from an organic microcavity

M. Swoboda, R. Gehlhaar, M. Sudzius, M. Hoffmann, H. Fröb, V. G. Lyssenko, and K. Leo

Appl. Phys. Lett. 89, 121110 (2006); http://dx.doi.org/10.1063/1.2356110 (3 pages) | Cited 2 times

Online Publication Date: 19 September 2006

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The authors present time-resolved studies of laser emission from an organic microcavity filled with a guest-host composite of tris(8-hydroxy quinoline) aluminium and 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran. A line splitting of 0.18 THz between two perpendicularly polarized lines is observed, resulting from an optical anisotropy in the distributed Bragg reflectors. This particular behavior is attributed to oblique columnar structures shaped by off-axial preparatory conditions. By means of an upconversion setup an oscillation at 5.5 ps period time and phase coupling of the modes are observed. A rate-equation-based approach is utilized for modeling the temporal behavior.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Low-threshold blue-emitting monolithic polymer vertical cavity surface-emitting lasers

Luana Persano, Andrea Camposeo, Pompilio Del Carro, Elisa Mele, Roberto Cingolani, and Dario Pisignano

Appl. Phys. Lett. 89, 121111 (2006); http://dx.doi.org/10.1063/1.2353822 (3 pages) | Cited 5 times

Online Publication Date: 20 September 2006

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The authors report on a monolithic vertical microcavity blue laser with a carbazole/fluorenyl derivative copolymer active film. The laser is realized by electron-beam deposition of the two dielectric mirrors on the bottom and on the top of the polymeric active layer. The devices exhibit a threshold fluence as low as 1.2 μJ/cm2, with a divergence of the emission beam of 2.8°. The measured lasing threshold and operational lifetimes (>1.5×104 pulses at an excitation density 500 times larger than threshold) are among the best so far reported for blue-emitting polymer lasers, thus making these devices promising candidates for future electrical excitation.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Jk Polymers and organics
42.70.Hj Laser materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers

Jung-Tang Chu, Tien-Chang Lu, Min You, Bor-Jye Su, Chih-Chiang Kao, Hao-Chung Kuo, and Shing-Chung Wang

Appl. Phys. Lett. 89, 121112 (2006); http://dx.doi.org/10.1063/1.2355476 (3 pages) | Cited 7 times

Online Publication Date: 20 September 2006

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The laser emission characteristics of a GaN-based vertical-cavity surface-emitting laser with two dielectric distributed Bragg reflectors were investigated under optically pumped operation at room temperature. The laser emitted wavelength at 415.9 nm with an emission linewidth of 0.25 nm and threshold pumping energy of 270 nJ. The laser has a high characteristic temperature of about 278 K and high spontaneous emission coupling factor of 10−2. The laser emission showed single and multiple spot emission patterns with spectral and spatial variations under different pumping conditions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Polarization rotation enhancement and scattering mechanisms in waveguide magnetophotonic crystals

Miguel Levy and Rong Li

Appl. Phys. Lett. 89, 121113 (2006); http://dx.doi.org/10.1063/1.2356379 (3 pages) | Cited 23 times

Online Publication Date: 20 September 2006

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Intermodal coupling in photonic band gap optical channels in magnetic garnet films is found to leverage the nonreciprocal polarization rotation. Forward fundamental-mode to high-order mode backscattering yields the largest rotations. The underlying mechanism is traced to the dependence of the grating-coupling constant on the modal refractive index and profile of the propagating beam. Large changes in polarization near the band edges are observed in first and second orders. Extreme sensitivity to linear birefringence exists in second order.
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42.70.Qs Photonic bandgap materials
78.20.Ls Magneto-optical effects
78.20.Ek Optical activity
42.79.Gn Optical waveguides and couplers
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.50.Gg Ferrimagnetics
85.70.Ge Ferrite and garnet devices
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Fm Birefringence

Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes

I. Vurgaftman, E. H. Aifer, C. L. Canedy, J. G. Tischler, J. R. Meyer, J. H. Warner, E. M. Jackson, G. Hildebrandt, and G. J. Sullivan

Appl. Phys. Lett. 89, 121114 (2006); http://dx.doi.org/10.1063/1.2356697 (3 pages) | Cited 47 times

Online Publication Date: 20 September 2006

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A new W-structured type-II superlattice photodiode design, with graded band gap in the depletion region, is shown to strongly suppress dark currents due to tunneling and generation-recombination processes. The long-wave infrared (LWIR) devices display 19%–29% quantum efficiency and substantially reduced dark currents. The median dynamic impedance-area product of 216 Ω cm2 for 33 devices with 10.5 μm cutoff at 78 K is comparable to that for state-of-the-art HgCdTe-based photodiodes. The sidewall resistivity of ≈ 70 kΩ cm for untreated mesas is also considerably higher than previous reports for passivated or unpassivated type-II LWIR photodiodes, apparently indicating self-passivation by the graded band gap.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Kr Display devices, liquid-crystal devices

Enhanced transmission through Penrose subwavelength hole arrays

F. Przybilla, C. Genet, and T. W. Ebbesen

Appl. Phys. Lett. 89, 121115 (2006); http://dx.doi.org/10.1063/1.2355450 (3 pages) | Cited 35 times

Online Publication Date: 20 September 2006

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Transmission through Penrose subwavelength hole arrays is studied in the optical regime. The loss of strict periodicity does not prevent surface plasmon modes from being excited. The authors study the spectral evolutions of these modes by increasing both the spacings between the holes in a commensurate way and the size of the array. When compared to the situation of a periodic array, their measurements show a reduction of the propagation length of the surface modes, most likely related to the influence of multiple scattering, which lowers the contribution of long-range interactions in the transmission spectra.
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78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics

Hua Tan, Kishore K. Kamath, Zetian Mi, Pallab Bhattacharya, and David Klotzkin

Appl. Phys. Lett. 89, 121116 (2006); http://dx.doi.org/10.1063/1.2354415 (3 pages) | Cited 2 times

Online Publication Date: 21 September 2006

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The thermal conductivity of self-organized quantum dot (QD) active regions is estimated by measurements of wavelength chirp with injected current as a function of the current pulse duty cycle both below and above threshold. A simple model which separates out thermal and charge carrier chirps is used to estimate the thermal conductivity of the QD active region. With this model, the thermal conductivity of the InGaAs QD active region is estimated to be ∼ 0.1 W/mK, about two orders of magnitude less than that of the bulk material. This is consistent with theoretical predictions of the reduced thermal conductivity of QD regions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure

Woon-Kyung Choi, Doo-Gun Kim, Yon-Tae Moon, Young-Wan Choi, Yong-Kwan Kim, Kent D. Choquette, Seok Lee, and Deok-Ha Woo

Appl. Phys. Lett. 89, 121117 (2006); http://dx.doi.org/10.1063/1.2355362 (3 pages) | Cited 2 times

Online Publication Date: 21 September 2006

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The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.-q Optoelectronic devices
42.82.Gw Other integrated-optical elements and systems

Balanced homodyne detection of second-harmonic generation from isolated subwavelength emitters

L. Le Xuan, S. Brasselet, F. Treussart, J.-F. Roch, F. Marquier, D. Chauvat, S. Perruchas, C. Tard, and T. Gacoin

Appl. Phys. Lett. 89, 121118 (2006); http://dx.doi.org/10.1063/1.2356375 (3 pages) | Cited 13 times

Online Publication Date: 21 September 2006

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The authors demonstrate the association of two-photon nonlinear microscopy with balanced homodyne detection for investigating second-harmonic radiation properties at nanoscale dimensions. Variation of the relative phase between second-harmonic and fundamental beams is retrieved, as a function of the absolute orientation of the nonlinear emitters. Sensitivity down to a few photons per second in the spatiotemporal mode of the local oscillator is obtained. This value is high enough to efficiently detect the coherent second-harmonic emission from a single KTiOPO4 crystal of subwavelength size.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
07.60.Pb Conventional optical microscopes
42.70.Mp Nonlinear optical crystals

Manufacturing method for n-type porous silicon based on Hall effect without illumination

Jia-Chuan Lin, Po-Wen Lee, and Wei-Chih Tsai

Appl. Phys. Lett. 89, 121119 (2006); http://dx.doi.org/10.1063/1.2354451 (3 pages) | Cited 5 times

Online Publication Date: 22 September 2006

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A method for the fabrication of n-type porous silicon (n‐PS) is developed. The Hall effect is applied in the fabrication process. The majority carriers in n-type Si (electrons) are swept down by the Lorentz force. Enough holes continuously appear on the surface layer to participate in chemical reaction during the etching process. Illumination sources are not necessary in this method. Therefore, no illumination limit has to be concerned in the formation of deep PS layer. The morphology, porosity, and photoluminescence of the n‐PS prepared by the proposed method are investigated. Strong visible photoluminescence emissions are demonstrated on n‐PS at about 650 nm.
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81.05.Cy Elemental semiconductors
81.05.Rm Porous materials; granular materials
78.55.Ap Elemental semiconductors
78.55.Mb Porous materials
72.20.My Galvanomagnetic and other magnetotransport effects
81.65.Cf Surface cleaning, etching, patterning

Surface plasmon mediated emission in resonant-cavity light-emitting diodes

P. A. Porta, M. Harries, and H. D. Summers

Appl. Phys. Lett. 89, 121120 (2006); http://dx.doi.org/10.1063/1.2357034 (3 pages) | Cited 2 times

Online Publication Date: 22 September 2006

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In this letter the authors describe a particular method to outcouple in air, via surface plasmons (SPs), optical radiation trapped in leaky waveguide modes of a resonant-cavity light-emitting diode. The deposition of a thin metal layer on the device surface creates SP modes at both the metal-dielectric interfaces. The successive overcoating of the metal layer with a thin polymer film and the roughening of its surface produce outcoupling of radiation trapped in leaky modes via SP modes. Experimental results for polarization resolved reflectivity and emission spectra are in excellent agreement with theoretical predictions.
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85.60.Jb Light-emitting devices
42.82.Et Waveguides, couplers, and arrays

Design optimization for micromachined low power Mach-Zehnder thermo-optic switch

Ching-Yi Wu, Puru Lin, Ruey-Shing Huang, Wei-Chung Chao, and Mark M. H. Lee

Appl. Phys. Lett. 89, 121121 (2006); http://dx.doi.org/10.1063/1.2354481 (3 pages) | Cited 5 times

Online Publication Date: 22 September 2006

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The main issue of a Mach-Zehnder interferometer based thermo-optic switch is that it needs large heating power to get adequate phase shift for switching. A device structure of etching in a silicon groove underneath the heated arm of waveguide was to suppress the heat loss through the bulk silicon substrate, hence reducing the required heating power. This study shows that the optimum design of the device is obtained when the silicon etched groove is located asymmetrically with respect to the two waveguide branches; power consumption as low as 49 mW and fast response time of a few milliseconds can be achieved.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.15.Eq Optical system design
42.65.Pc Optical bistability, multistability, and switching, including local field effects
07.60.Ly Interferometers
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Enhanced Raman gain coefficients and bandwidths in P2O5 and WO3 added tellurite glasses for Raman gain media

Rajan Jose and Yasutake Ohishi

Appl. Phys. Lett. 89, 121122 (2006); http://dx.doi.org/10.1063/1.2352721 (3 pages) | Cited 8 times

Online Publication Date: 22 September 2006

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The Raman gain coefficient and bandwidth of tellurite glasses have been tailored by systematically adding WO3 and P2O5 in a TeO2BaOSrONb2O5 glass system. The Raman gain coefficients of the resultant glasses were obtained from spontaneous Raman scattering experiments using a 633 nm laser. The glasses developed here showed the widest gain bandwidths so far achieved in tellurite glasses while maintaining higher gain coefficients. The gain bandwidths of these glasses were more than twice that of a conventional tellurite-based glass and 70% larger than that of the silica glass.
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42.70.Ce Glasses, quartz
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Pinning-induced round solitons with symmetric nonlinear response for electroactivated optical circuitry

Angelo Pierangelo, E. DelRe, E. Palange, A. Ciattoni, Y. Garcia, and A. J. Agranat

Appl. Phys. Lett. 89, 121123 (2006); http://dx.doi.org/10.1063/1.2357041 (3 pages)

Online Publication Date: 22 September 2006

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The authors experimentally and theoretically study the formation of transient two-dimensional photorefractive spatial solitons in a striated paraelectric potassium lithium tantalate niobate crystal. The partial pinning to the built-in slablike index structures activates an interplay between the linear and nonlinear responses that leads to round solitons through a highly symmetric anisotropic nonlinearity, the means to self-write compact undistorted optical circuitry.
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42.65.Tg Optical solitons; nonlinear guided waves
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Gi Light-sensitive materials

Generation of narrow-bandwidth picosecond visible pulses from broadband femtosecond pulses for femtosecond stimulated Raman

Sangdeok Shim and Richard A. Mathies

Appl. Phys. Lett. 89, 121124 (2006); http://dx.doi.org/10.1063/1.2356318 (3 pages) | Cited 13 times

Online Publication Date: 22 September 2006

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To perform time-resolved vibrational structural studies with femtosecond stimulated Raman spectroscopy, it is desirable to produce tunable transform-limited picosecond pulses in the visible from a femtosecond laser system. The authors demonstrate here the generation of ∼ 36 cm−1 bandwidth tunable picosecond pulses across the entire visible spectral range using a narrow-bandwidth optical parametric amplifier with chirped pulse pumping. These pulses are characterized and used to obtain broadband stimulated Raman spectra with 38 cm−1 resolution.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.Fc Modulation, tuning, and mode locking
42.65.Yj Optical parametric oscillators and amplifiers

Dichroism of diamond grains by a polarization modulated near field optical setup

Ruggero Micheletto, Yoichi Kawakami, Claudio Manfredotti, Yiuri Garino, and Maria Allegrini

Appl. Phys. Lett. 89, 121125 (2006); http://dx.doi.org/10.1063/1.2338581 (3 pages) | Cited 3 times

Online Publication Date: 22 September 2006

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Diamond grown by chemical vapor deposition (CVD) was investigated using a polarization modulated scanning near field optical microscope. The authors found that the luminescence has spatial inhomogeneities and it is partially polarized. Confined emission shows differences in polarization angle up to 90°. The study reveals a peculiar confined dichroic behavior in CVD materials and suggests that local crystal aggregates play a role in it.
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78.20.Fm Birefringence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Hx Other solid inorganic materials
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