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18 Sep 2006

Volume 89, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 89, 121104 (2006); http://dx.doi.org/10.1063/1.2354411 (3 pages)

M. M. de Lima, M. Beck, R. Hey, and P. V. Santos
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Green top-emitting organic light emitting device with transparent Ba/Ag bilayer cathode

C. J. Lee, R. B. Pode, J. I. Han, and D. G. Moon

Appl. Phys. Lett. 89, 123501 (2006); http://dx.doi.org/10.1063/1.2355464 (3 pages) | Cited 7 times

Online Publication Date: 19 September 2006

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Using a vacuum thermal technique, semitransparent Ba/Ag bilayer cathode has been fabricated for the top-emitting organic light emitting devices. In this work, optical transparency over 60% in the visible region and low sheet resistance of about 15 Ω/sq in the Ba (10 nm)/Ag (8 nm) structure are reported. The surface and compositional morphologies of the cathode play a crucial role in determining the optical properties. Top-emitting organic light emitting device using this cathode has been fabricated and studied.
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85.60.Jb Light-emitting devices

Mechanism and scalability in resistive switching of metal-Pr0.7Ca0.3MnO3 interface

S. Tsui, Y. Q. Wang, Y. Y. Xue, and C. W. Chu

Appl. Phys. Lett. 89, 123502 (2006); http://dx.doi.org/10.1063/1.2349312 (3 pages) | Cited 12 times

Online Publication Date: 20 September 2006

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The polarity-dependent resistive switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size scalability, may be altered through interface treatments.
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73.40.Ns Metal-nonmetal contacts
72.20.Ee Mobility edges; hopping transport
84.30.Sk Pulse and digital circuits

Efficient nondoped white organic light-emitting diodes based on electromers

Xinjun Xu, Gui Yu, Chong’an Di, Yunqi Liu, Kefeng Shao, Lianming Yang, and Ping Lu

Appl. Phys. Lett. 89, 123503 (2006); http://dx.doi.org/10.1063/1.2357008 (3 pages) | Cited 15 times

Online Publication Date: 20 September 2006

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The authors report excellent white organic light-emitting diodes (WOLEDs) made of 9,9bis[4-(di-p-tolyl)aminophenyl]-2,7-bis(diphenylamino)fluorene (TADPF) or 9,9-bis[4-(di-p-tolyl)aminophenyl]-2,7-bis(9-carbazolyl)fluorene (TAKF). The superposition of a yellow emission coming from the TADPF or TAKF electromer and a blue emission originating from bis(2-(2-hydroxyphenyl)benzothiazolate)zinc gives rise to a pure white-light emission. The multilayer device using TADPF shows a maximum luminance of 5123 cd/m2, a current efficiency of 2.8 cd/A, and Commission Internationale d’Eclairage chromaticity coordinates of (0.33, 0.33). This result is the optimal for WOLEDs based on electromers so far reported.
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85.60.Jb Light-emitting devices

Cooperative absorption of terahertz radiation by plasmon modes in an array of field-effect transistors with two-dimensional electron channel

V. V. Popov, G. M. Tsymbalov, D. V. Fateev, and M. S. Shur

Appl. Phys. Lett. 89, 123504 (2006); http://dx.doi.org/10.1063/1.2356378 (3 pages) | Cited 3 times

Online Publication Date: 20 September 2006

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The authors computer simulations show that plasmon modes excited in an array of field-effect transistors with two-dimensional electron channel strongly couple to terahertz radiation due to the synchronization of plasma oscillations in different unit cells of the array. It is shown that in such a device the higher-order plasmon modes are excited much more effectively than in a large area two-dimensional electron channel coupled to terahertz radiation by a slit-grating gate. Effective excitation of the higher-order plasmon modes makes it possible to design terahertz plasmonic devices with operating frequencies up to 15 THz or even higher.
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71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.30.Tv Field effect devices
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)

Hole-transporting interlayers for improving the device lifetime in the polymer light-emitting diodes

Tae-Woo Lee, Mu-Gyeom Kim, Sang Yeol Kim, Sang Hun Park, Ohyun Kwon, Taeyong Noh, and Tae-Sik Oh

Appl. Phys. Lett. 89, 123505 (2006); http://dx.doi.org/10.1063/1.2345239 (3 pages) | Cited 24 times

Online Publication Date: 21 September 2006

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The authors report the effect of thermal treatment of hole-transporting interlayers between a polymeric hole injection layer and an emitting layer (EML) on the luminous efficiency and the lifetime performance in blue polymer light-emitting diodes. As the thermal annealing temperature of the interlayer increased, the hole mobility of the interlayer tended to decrease, which results in reducing the hole current injected into the EML in the devices. Hence, the device luminous efficiency decreased due to lower electron-hole balance. Nevertheless, the device lifetime increased, which can be attributed to the formation of the thicker interlayer and the better defined interlayer/EML interface.
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85.60.Jb Light-emitting devices

Improved electrical stability in asymmetric fingered polysilicon thin film transistors

M. Cuscunà, L. Mariucci, G. Fortunato, A. Bonfiglietti, A. Pecora, and A. Valletta

Appl. Phys. Lett. 89, 123506 (2006); http://dx.doi.org/10.1063/1.2354420 (3 pages) | Cited 1 time

Online Publication Date: 21 September 2006

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The authors studied the electrical stability of the asymmetric fingered polysilicon thin film transistors (AF-TFTs) at different bias-stress conditions by using a new test structure with an additional contact on the n+-floating region. This structure allows to measure the two subchannel TFT (sub-TFT) electrical characteristics before and after bias stressing. The AF-TFTs show a very stable saturation regime, even when bias stressing at very high Vds, where the electrical characteristics of both sub-TFTs are degraded. The authors concluded that stability of the AF-TFTs is related to the specific operation of the device rather than to immunity of this structure to hot carrier effects.
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85.30.Tv Field effect devices

Tristate liquid crystal display with memory and dynamic operating modes

Chul Gyu Jhun, Chao Ping Chen, Uk Joo Lee, Seong Ryong Lee, Tae-Hoon Yoon, and Jae Chang Kim

Appl. Phys. Lett. 89, 123507 (2006); http://dx.doi.org/10.1063/1.2354430 (3 pages) | Cited 24 times

Online Publication Date: 21 September 2006

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So far, monostable and bistable liquid crystal display (LCD) modes have independently been researched and developed. The authors propose a tristate LCD that can be operated in memory mode as well as dynamic mode. The proposed device has a unique texture of splay, π twist, and bend states with applied voltages and is operated in memory mode or dynamic mode by selective switching of two states among them. They demonstrate switching characteristics of the tristate LCD. This tristate LCD has a long term memory time for memory mode as well as a fast response time for dynamic mode.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Organic field-effect transistors with reduced contact resistance

Takahiko Maeda, Hisato Kato, and Haruo Kawakami

Appl. Phys. Lett. 89, 123508 (2006); http://dx.doi.org/10.1063/1.2357009 (3 pages) | Cited 13 times

Online Publication Date: 22 September 2006

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In this letter, the authors report a reduction in the contact resistance between pentacene and Au source/drain electrodes of organic field-effect transistors (OFETs). By immersing the Au electrodes in a sulfuric acid and hydrogen peroxide mixture, the injection barrier between the Au electrodes and pentacene was lowered by approximately 0.2 eV and the contact resistance significantly decreased. The fabricated bottom-contact OFETs revealed a field-effect mobility of more than 0.66 cm2/V s at a channel length ranging from 3 to 30 μm, which is comparable to that of top-contact OFETs with a 50 μm channel length.
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85.30.Tv Field effect devices
73.40.Cg Contact resistance, contact potential

Polarization enhanced “single shot” math nuclear quadrupole resonance detection of trinitrotoluene at room temperature

Janko Lužnik, Janez Pirnat, Vojko Jazbinšek, Tomaž Apih, Alan Gregorovič, Robert Blinc, Janez Seliger, and Zvonko Trontelj

Appl. Phys. Lett. 89, 123509 (2006); http://dx.doi.org/10.1063/1.2357015 (3 pages) | Cited 10 times

Online Publication Date: 22 September 2006

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The authors show that a combination of proton-nitrogen level crossing polarization transfer with a pulsed spin-locking sequence makes math nuclear quadrupole resonance (NQR) fast and sensitive enough to be used in routine explosive detection as well as in the pharmaceutical industry for nondestructive chemical analysis of solid samples and polymorph determination. As an example we present “single shot” measurements of the math NQR spectra of 15 g of trinitrotoluene at room temperature with a total measuring time of 20 s.
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76.60.Gv Quadrupole resonance
82.80.-d Chemical analysis and related physical methods of analysis

Field emission studies on well adhered pulsed laser deposited LaB6 on W tip

Dattatray J. Late, Mahendra A. More, Dilip S. Joag, Pankaj Misra, B. N. Singh, and Lalit M. Kukreja

Appl. Phys. Lett. 89, 123510 (2006); http://dx.doi.org/10.1063/1.2337999 (3 pages) | Cited 14 times

Online Publication Date: 22 September 2006

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Lanthanum hexaboride films have been deposited on a tungsten tip by pulsed laser deposition technique. The field emission studies have been performed in the conventional field emission geometry. The Fowler-Nordheim plot obtained from the current-voltage characteristic is found to be linear in accordance with the quantum mechanical tunneling phenomenon. A current density of 1.2×104 A/cm2 is drawn from the deposited tip. The field enhancement factor is calculated to be 5537 cm−1, indicating that the field emission is from nanoscale protrusions present on emitter surface. The emission current-time plots show the very good stability of the emitter.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Gk Tunneling
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