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Applied Physics Letters / Volume 89 / Issue 13 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 89, 131906 (2006); doi:10.1063/1.2357569 (3 pages)

Stress relaxation during the growth of 3C-SiC/Si thin films

M. Zielinski1, A. Leycuras1, S. Ndiaye1, and T. Chassagne2

1CNRS-CRHEA, rue Bernard Gregory, 06560 Valbonne, France
2NOVASiC, Savoie Technolac, Arche Bt. 4, BP 267, 73375 Le Bourget du Lac Cedex, France

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(Received 28 March 2006; accepted 7 August 2006; published online 25 September 2006)

In this work the authors study the strain of 3C-SiC thin films grown on (001) on-axis silicon substrates. They use ex situ wafer curvature measurements to monitor the residual strain of silicon carbide film. At high temperature creep effects take place and modify the intrinsic strain of silicon carbide film. From the time and temperature dependences of these effects, they determine the creep exponent and the creep activation energy for 3C-SiC. Obtained values of N = 2.6±0.3 and Q = 5.6±1.0 eV are similar to those reported in literature for hexagonal polytypes of silicon carbide.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

stress relaxation, silicon compounds, internal stresses, chemical vapour deposition, epitaxial layers

PACS

  • 81.40.Jj

    Elasticity and anelasticity, stress-strain relations

  • 62.40.+i

    Anelasticity, internal friction, stress relaxation, and mechanical resonances

  • 62.20.-x

    Mechanical properties of solids

  • 68.60.Bs

    Mechanical and acoustical properties

  • 68.55.A-

    Nucleation and growth

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2357569

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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