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Applied Physics Letters / Volume 89 / Issue 13 / DEVICE PHYSICS

Appl. Phys. Lett. 89, 133512 (2006); doi:10.1063/1.2354423 (3 pages)

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

Kyoung H. Kim1, Damon B. Farmer1, Jean-Sebastien M. Lehn2, P. Venkateswara Rao2, and Roy G. Gordon2

1Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
2Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138

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(Received 29 June 2006; accepted 24 July 2006; published online 29 September 2006)

GdScO3 films were deposited on hydrogenated silicon substrates by atomic layer deposition. The films were pure and amorphous, both as-deposited and after a 5 min anneal at 950 °C. Cross-sectional transmission electron microscopy revealed a sharp, smooth interface between GdScO3 and Si. Capacitance and leakage current measurements on metal oxide semiconductor capacitors made from atomic layer deposited WN/GdScO3 stacks showed that the amorphous GdScO3 films have a high dielectric constant ( ∼ 22), low fixed charge density, and low interface trap density. A film with 1 nm equivalent oxide thickness also demonstrated that the leakage current density is less than 2 mA/cm2 at 1 V gate bias.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

gadolinium compounds, high-k dielectric thin films, leakage currents, atomic layer deposition, amorphous state, annealing, transmission electron microscopy, interface states, MOS capacitors

PACS

  • 77.55.-g

    Dielectric thin films

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.A-

    Nucleation and growth

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 61.43.-j

    Disordered solids

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2354423

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V. V. Afanas'ev, A. Stesmans, and D. G. Schlom, Appl. Phys. Lett. 86, 132903 (2005)APPLAB000086000013132903000001.

    M. Wagner, T. Heeg, J. Schubert, S. Lenk, S. Mantl, C. Zhao, M. Caymax, and S. D. Gendt, Appl. Phys. Lett. 88, 172901 (2006)APPLAB000088000017172901000001.

    J. R. Hauser and K. Ahmed, AIP Conf. Proc. 449, 235 (1998)APCPCS000449000001000235000001.


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