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25 Sep 2006

Volume 89, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 89, 131108 (2006); http://dx.doi.org/10.1063/1.2356892 (3 pages)

Paul E. Barclay, Kartik Srinivasan, Oskar Painter, Benjamin Lev, and Hideo Mabuchi
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Comment on “Effects of Cl2/Ar dry etching on p-GaN with Ni/Au metallization characterization” [ Appl. Phys Lett. 87, 252107 (2005) ]

C. Y. Ho

Appl. Phys. Lett. 89, 136101 (2006); http://dx.doi.org/10.1063/1.2357025 (1 page)

Online Publication Date: 26 September 2006

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Abstract Unavailable
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81.65.Cf Surface cleaning, etching, patterning
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.Cc Kinetics of defect formation and annealing
68.35.B- Structure of clean surfaces (and surface reconstruction)
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