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25 Sep 2006

Volume 89, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 89, 131108 (2006); http://dx.doi.org/10.1063/1.2356892 (3 pages)

Paul E. Barclay, Kartik Srinivasan, Oskar Painter, Benjamin Lev, and Hideo Mabuchi
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Transition from multiple to single microcontact conduction during hot switching of microelectromechanical switches with ball-shaped dimples

Linda L. W. Chow, Steven A. Schrader, and Katsuo Kurabayashi

Appl. Phys. Lett. 89, 133501 (2006); http://dx.doi.org/10.1063/1.2352041 (3 pages) | Cited 4 times

Online Publication Date: 25 September 2006

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Previous studies of electron transport within direct contact microelectromechanical switches have found that conduction occurs via nanoscale contact asperities. It has been claimed that reduced contact resistance can be achieved by using multiple contact switches; however, the ability of these switches to enhance power handling or lifetime remains a question. To study the contact mechanism, single-input-multiple-output switches with ball-shaped dimples were specially designed and tested. At all voltage levels of hot-switching operation, uneven current sharing among the outputs was observed. Furthermore, at softening voltage, an irreversible multiple to single conduction transition occurs and is found to alternate among different outputs.
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73.40.Cg Contact resistance, contact potential
73.63.Rt Nanoscale contacts
84.32.Dd Connectors, relays, and switches
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Observation of negative differential resistance and hysteretic effect on buriti oil:polystyrene organic devices

J. A. Durães, M. J. Araújo Sales, R. F. Souto, A. Romariz, J. C. da Costa, A. M. Ceschin, and S. G. C. Moreira

Appl. Phys. Lett. 89, 133502 (2006); http://dx.doi.org/10.1063/1.2356097 (3 pages) | Cited 6 times

Online Publication Date: 25 September 2006

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The authors have observed hysteretic behavior and negative differential resistance in single-layer devices made from buriti oil mixed with polystyrene and sandwiched between poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) and silver (Ag) electrodes. The hysteresis curve shows not only two different values of current but different behaviors as the increasing voltage curve shows negative differential resistance and the decreasing voltage curve does not. The fact that a simple fabrication technique yields reproducible conductance switching and hysteresis is relevant for the development of theories of organic electronic device behavior.
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84.30.Sk Pulse and digital circuits

Low temperature refrigeration by electron emission in a crossed-field gap

L. Wu and L. K. Ang

Appl. Phys. Lett. 89, 133503 (2006); http://dx.doi.org/10.1063/1.2357549 (3 pages) | Cited 5 times

Online Publication Date: 26 September 2006

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A method of refrigeration using thermal-field electron emission from nanoscale emitters of arbitrary work function in a vacuum crossed-field gap is proposed. With an external crossed magnetic field, an additional potential barrier near the anode is created to restrict the tunneling of low-energy electrons (below the Fermi energy) and thus provids a versatile cooling capability from 300 down to 10 K. Optimal conditions are determined numerically and analytically, which give local cooling power densities (per emitter) of about 600 kW/cm2 (at 300 K), 2.7 kW/cm2 (at 50 K), and 20 W/cm2 (at 10 K).
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
79.40.+z Thermionic emission
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling

Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

H. Nakamura, H. Takagi, I. H. Inoue, Y. Takahashi, T. Hasegawa, and Y. Tokura

Appl. Phys. Lett. 89, 133504 (2006); http://dx.doi.org/10.1063/1.2357850 (3 pages) | Cited 23 times

Online Publication Date: 26 September 2006

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Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R◻ ∼ 10 kΩ at low temperatures, with carrier mobility exceeding 1000 cm2/V s. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR/dT>0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control.
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85.30.Tv Field effect devices

High-resolution superconducting single-flux quantum comparator for sub-Kelvin temperatures

A. M. Savin, J. P. Pekola, T. Holmqvist, J. Hassel, L. Grönberg, P. Helistö, and A. Kidiyarova-Shevchenko

Appl. Phys. Lett. 89, 133505 (2006); http://dx.doi.org/10.1063/1.2357858 (3 pages) | Cited 9 times

Online Publication Date: 26 September 2006

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A design of sub-Kelvin single-flux quantum (SFQ) circuits with reduced power dissipation and additional cooling of shunt resistors has been developed and characterized. The authors demonstrate operation of SFQ comparators with current resolution of 40 nA at 2 GHz sampling rate. Due to improved cooling the electron temperature in shunt resistors of a SFQ comparator is below 50 mK when the bath temperature is about 30 mK.
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85.25.Cp Josephson devices

In situ electric field simulation in metal/insulator/metal capacitors

Nicolas Gaillard, Luc Pinzelli, Mickael Gros-Jean, and Ahmad Bsiesy

Appl. Phys. Lett. 89, 133506 (2006); http://dx.doi.org/10.1063/1.2357891 (3 pages) | Cited 19 times

Online Publication Date: 26 September 2006

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The authors report in this letter the effect of interface topography on metal/insulator/metal (MIM) capacitor electrical properties. This analysis was carried out by numerical simulations of the electric field established in a MIM structure with a 45 nm thick Ta2O5 film. The metal/insulator interface profiles have been extracted from transmission electron microscopy micrographs of a fully integrated device. This in situ approach allows direct comparison between electrical properties and numerical simulations performed on the same device. Results show that the bottom electrode’s surface roughness induces a large electric field increase at the interface which could explain MIM capacitor’s asymmetrical electrical behavior.
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85.30.Tv Field effect devices
84.32.Tt Capacitors

Low-voltage-driven top-gate ZnO thin-film transistors with polymer/high-k oxide double-layer dielectric

Kimoon Lee, Jae Hoon Kim, Seongil Im, Chang Su Kim, and Hong Koo Baik

Appl. Phys. Lett. 89, 133507 (2006); http://dx.doi.org/10.1063/1.2357559 (3 pages) | Cited 27 times

Online Publication Date: 27 September 2006

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The authors report on the fabrication of a low-voltage-driven top-gate ZnO thin-film transistor with a polymer/high-k oxide double-layer dielectric. Hybrid double-layer dielectric (k = ∼ 9.8) was formed on patterned ZnO through sequential deposition processes: spin casting of 45-nm-thin poly-4-vinylphenol and e-beam evaporation of 50-nm-thick amorphous high-k oxide (CeO2–SiO2 mixture). Room-temperature-deposited ZnO channel exhibits much rougher surfaces compared to that of 100 °C deposited ZnO, so that enhanced device performances were achieved from a ZnO thin-film transistor (TFT) prepared with 100 °C deposited ZnO: ∼ 0.48 cm2/V s for field-effect mobility and ∼ 5×103 for on/off current ratio. Adopting our top-gate ZnO-TFT, a load-resistance inverter was set up and demonstrated decent static and dynamic operations at 3 V.
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85.30.Tv Field effect devices

Quadratic autocorrelation of free-electron laser radiation and photocurrent saturation in two-photon quantum well infrared photodetectors

H. Schneider, O. Drachenko, S. Winnerl, M. Helm, and M. Walther

Appl. Phys. Lett. 89, 133508 (2006); http://dx.doi.org/10.1063/1.2357936 (3 pages) | Cited 6 times

Online Publication Date: 27 September 2006

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Using the free-electron laser facility FELBE, the authors have studied the influence of the intensity on the quadratic autocorrelation measured with two-photon quantum well infrared photodetectors (QWIPs). At high illumination powers, the shape of the autocorrelation trace is affected by photocurrent saturation of the two-photon QWIP. They describe the saturation mechanism by different analytical models taking account of the photocurrent nonlinearity in analogy to linear QWIPs and give conditions where true quadratic behavior can be observed. While these studies were carried out at 77 K, properties of two-photon QWIPs at room temperature will also be addressed.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
41.60.Cr Free-electron lasers
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Improving the power efficiency of white light-emitting diode by doping electron transport material

Jinsong Huang, Wei-Jen Hou, Juo-Hao Li, Gang Li, and Yang Yang

Appl. Phys. Lett. 89, 133509 (2006); http://dx.doi.org/10.1063/1.2357938 (3 pages) | Cited 44 times

Online Publication Date: 27 September 2006

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Highly efficient white light emission was realized via the partial energy transfer from blue host polyfluorene (PF) to orange light emission dopant rubrene. A more balanced charge transport was achieved by adding an electron transport material, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), into the PF-rubrene system to enhance the electron transportation. Efficiency improvement by as much as a factor of 2 has been observed through the addition of PBD. These devices can easily reach high luminance at low driving voltages, thus achieving high power efficiency at high luminance (14.8, 13.5, and 12.0 lm/W at the luminances of 1000, 2000, and 4000 cd/m2, respectively). Therefore, this performance is an important approach toward solid-state lighting application. The enhancement is mainly attributed to three factors: increased electron transport property of the host material, increased photoluminescence quantum efficiency, and the shifting of emission zone away from cathode contact. The reported efficiency is among the highest values reported in the white emission polymer light-emitting diodes.
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85.60.Jb Light-emitting devices

Admittance spectroscopy of polymer-nanoparticle nonvolatile memory devices

D. T. Simon, M. S. Griffo, R. A. DiPietro, S. A. Swanson, and S. A. Carter

Appl. Phys. Lett. 89, 133510 (2006); http://dx.doi.org/10.1063/1.2357560 (3 pages) | Cited 13 times

Online Publication Date: 28 September 2006

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Nonvolatile resistive memory consisting of gold nanoparticles embedded in the conducting polymer poly(4-n-hexylphenyldiphenylamine) examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity “on” state, as well as evidence for similar transport in the lower-conductivity “off” state. Furthermore, the larger dc capacitance of the on state indicates that a greater amount of filling of the midgap nanoparticle trap levels increases the overall device conductivity, leading to the memory effect.
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84.30.Sk Pulse and digital circuits

Effective organic-based connection unit for stacked organic light-emitting devices

C. W. Law, K. M. Lau, M. K. Fung, M. Y. Chan, F. L. Wong, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 89, 133511 (2006); http://dx.doi.org/10.1063/1.2357846 (3 pages) | Cited 42 times

Online Publication Date: 28 September 2006

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A bilayer connection unit of Mg-doped Alq3 and F4-TCNQ-doped m-MTDATA was investigated for application in stacked organic light-emitting device. This connection unit led to a stacked OLED with a luminous efficiency twice that of a single-unit OLED. Electronic structures, including relevant electron energy levels, of the various interfaces in the stacked OLED were studied by using ultraviolet photoemission spectroscopy and used to discuss the working mechanisms of the stacked OLED. The p-type dopant F4-TCNQ was shown to induce a large band bending of 1.36 eV and facilitates efficient carrier injection from the connection units into the carrier-transporting layers.
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85.60.Jb Light-emitting devices

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

Kyoung H. Kim, Damon B. Farmer, Jean-Sebastien M. Lehn, P. Venkateswara Rao, and Roy G. Gordon

Appl. Phys. Lett. 89, 133512 (2006); http://dx.doi.org/10.1063/1.2354423 (3 pages) | Cited 23 times

Online Publication Date: 29 September 2006

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GdScO3 films were deposited on hydrogenated silicon substrates by atomic layer deposition. The films were pure and amorphous, both as-deposited and after a 5 min anneal at 950 °C. Cross-sectional transmission electron microscopy revealed a sharp, smooth interface between GdScO3 and Si. Capacitance and leakage current measurements on metal oxide semiconductor capacitors made from atomic layer deposited WN/GdScO3 stacks showed that the amorphous GdScO3 films have a high dielectric constant ( ∼ 22), low fixed charge density, and low interface trap density. A film with 1 nm equivalent oxide thickness also demonstrated that the leakage current density is less than 2 mA/cm2 at 1 V gate bias.
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77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
81.40.Gh Other heat and thermomechanical treatments
61.43.-j Disordered solids
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