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25 Sep 2006

Volume 89, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 131108 (2006); http://dx.doi.org/10.1063/1.2356892 (3 pages)

Paul E. Barclay, Kartik Srinivasan, Oskar Painter, Benjamin Lev, and Hideo Mabuchi
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Evolution of wurtzite CdTe through the formation of cluster assembled films

S. Neretina, P. Mascher, R. A. Hughes, N. Braidy, W. H. Gong, J. F. Britten, J. S. Preston, N. V. Sochinskii, and P. Dippo

Appl. Phys. Lett. 89, 133101 (2006); http://dx.doi.org/10.1063/1.2357033 (3 pages) | Cited 5 times

Online Publication Date: 25 September 2006

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An approach has been developed to produce CdTe films with a high proportion of the metastable wurtzite phase. It involves the use of pulsed laser deposition to produce CdTe nanoparticles which are then collected on a substrate. Electron microscopy indicates that the nanoparticles produced have a relatively minor fraction of the wurtzite phase coexisting with the stable zinc blende phase. If these same nanoparticles arrive at a heated substrate they form a relatively dense cluster assembled film with an obvious wurtzite signature. Quite remarkable is that higher temperatures promote the metastable structure at the expense of the stable zinc blende phase.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
81.15.Fg Pulsed laser ablation deposition
81.16.-c Methods of micro- and nanofabrication and processing
68.55.A- Nucleation and growth
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Effect of single-walled carbon nanotube purity on the thermal conductivity of carbon nanotube-based composites

Aiping Yu, Mikhail E. Itkis, Elena Bekyarova, and Robert C. Haddon

Appl. Phys. Lett. 89, 133102 (2006); http://dx.doi.org/10.1063/1.2357580 (3 pages) | Cited 25 times

Online Publication Date: 25 September 2006

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Raw [as-prepared (AP)] and purified single-walled carbon nanotubes (SWNTs) were utilized for the preparation of SWNT-epoxy composites. Purified functionalized SWNTs provide a significantly greater enhancement of the thermal conductivity, whereas AP-SWNTs allow the best electrical properties because of their ability to form efficient percolating network. A series of SWNT samples of varying purity but identical chemical functionality was prepared to delineate the effect of SWNT purity on the thermal conductivity of SWNT-epoxy composites. The authors found that purified SWNTs provide approximately five times greater enhancement of the thermal conductivity than the impure SWNT fraction demonstrating the significance of SWNT quality for thermal management.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.46.Fg Nanotubes

Vapor phase growth of Al whiskers induced by glancing angle deposition at high temperature

Motofumi Suzuki, Koji Nagai, Sadamu Kinoshita, Kaoru Nakajima, Kenji Kimura, Tomoki Okano, and Kaoru Sasakawa

Appl. Phys. Lett. 89, 133103 (2006); http://dx.doi.org/10.1063/1.2357582 (3 pages) | Cited 20 times

Online Publication Date: 25 September 2006

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The authors demonstrate the growth of unusual Al whiskers by glancing angle deposition on a high temperature (HT-GLAD) substrate, while the usual columnar structures completely disappear due to accelerated surface diffusion. HT-GLAD is essential for the nucleation of the whiskers and efficient supply of Al atoms on the side surface of the vertically growing whiskers. HT-GLAD will, for the first time, reveal the mechanisms for the vapor growth of metal whiskers.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
68.35.Fx Diffusion; interface formation
81.10.Bk Growth from vapor

Mitigation of tensile failure in released nanoporous metal microstructures via thermal treatment

Jianzhong Zhu, Erkin Seker, Hilary Bart-Smith, Matthew R. Begley, Robert G. Kelly, Giovanni Zangari, Whye-Kei Lye, and Michael L. Reed

Appl. Phys. Lett. 89, 133104 (2006); http://dx.doi.org/10.1063/1.2357586 (3 pages) | Cited 11 times

Online Publication Date: 25 September 2006

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The authors have developed a method to fabricate released microstructures of nanoporous Au (np-Au) by dealloying a Au–Ag alloy film patterned over a sacrificial Al layer. Doubly clamped bridges fail during dealloying owing to large tensile stresses induced during the dealloying process. Thermal treatments of released microstructures prior to dealloying generate sufficient compressive stress to induce plastic buckling. This buckling compensates the tensile stresses generated during the dealloying process, thus mitigating fracture of the np-Au.
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81.07.Bc Nanocrystalline materials
81.05.Rm Porous materials; granular materials
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials
81.40.Gh Other heat and thermomechanical treatments
81.40.Lm Deformation, plasticity, and creep

Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes

P. W. Li, David M. T. Kuo, and Y. C. Hsu

Appl. Phys. Lett. 89, 133105 (2006); http://dx.doi.org/10.1063/1.2357550 (3 pages)

Online Publication Date: 26 September 2006

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The authors have experimentally investigated photoexcitation effects on carrier transports through a Ge quantum-dot (QD)/SiO2 system via a resonant tunneling diode (RTD). Features of resonant oscillation and negative differential conductance are observed from the tunneling current of Ge-QDs RTDs at room temperature. The tunneling current not only displays additional oscillatory peaks but also exhibits enhanced peak-to-valley current ratio under photoexcitation. This indicates that holes created in the QD by photoexcitation lead to additional channels via the electron-hole interaction for electron tunneling through the QD. The exciton binding energy in the Ge QD could also be extracted from the voltage separation of the tunneling current peaks.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk Junction diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Plasmonic waveguide ring resonator at terahertz frequencies

Bing Wang and Guo Ping Wang

Appl. Phys. Lett. 89, 133106 (2006); http://dx.doi.org/10.1063/1.2357557 (3 pages) | Cited 20 times

Online Publication Date: 26 September 2006

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The authors theoretically demonstrate a plasmonic waveguide ring resonator (WRR) working at terahertz frequencies considering that surface plasmon polaritons (SPPs) can effectively propagate on bended plasmonic waveguides with dielectric claddings possessing high refractive index. A free spectral region of 110 GHz has been achieved by decreasing ring radius of the WRR, which could be much smaller than the operating wavelength. By introducing dielectric and plasmonic waveguides at both sides of the resonant ring, respectively, SPPs can be efficiently excited at the output of the WRR through mode coupling. The plasmonic WRRs may find great applications in the integration of terahertz generation and control platform.
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42.79.Gn Optical waveguides and couplers
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.68.+m Optical properties of surfaces

Superellipsoids: A unified analytical description of the geometry of nanoscale second-phase particles of any shape

Ihor Sobchenko, Josef Pesicka, Dietmar Baither, Rudolf Reichelt, and Eckhard Nembach

Appl. Phys. Lett. 89, 133107 (2006); http://dx.doi.org/10.1063/1.2357583 (2 pages)

Online Publication Date: 26 September 2006

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An equation for the analytical description of the geometry of nanoscale second-phase particles of any shape (spheres, cubes, plates, cylinders, and fibers) is presented: they are elegantly described as superellipsoids. The respective equation involves four parameters, which can be experimentally derived from just one micrograph.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.30.Bx Phase diagrams of metals, alloys, and oxides

Measurements of nanofluid viscosity and its implications for thermal applications

Ravi Prasher, David Song, Jinlin Wang, and Patrick Phelan

Appl. Phys. Lett. 89, 133108 (2006); http://dx.doi.org/10.1063/1.2356113 (3 pages) | Cited 116 times

Online Publication Date: 26 September 2006

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Experimental results on the viscosity of alumina-based nanofluids are reported for various shear rates, temperature, nanoparticle diameter, and nanoparticle volume fraction. From the data it seems that the increase in the nanofluid viscosity is higher than the enhancement in the thermal conductivity as reported in the literature. It is shown, however, that the viscosity has to be increased by more than a factor of 4—relative to the increase in thermal conductivity—to make the nanofluid thermal performance worse than that of the base fluid.
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66.20.-d Viscosity of liquids; diffusive momentum transport
83.60.Fg Shear rate dependent viscosity
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
82.70.Dd Colloids
66.25.+g Thermal conduction in nonmetallic liquids
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Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films

M. N. Chang, C. Y. Chen, M. J. Yang, and C. H. Chien

Appl. Phys. Lett. 89, 133109 (2006); http://dx.doi.org/10.1063/1.2357873 (3 pages) | Cited 2 times

Online Publication Date: 26 September 2006

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The authors have used front-wing conductive probes to investigate the photovoltaic effect on the conductive atomic force microscopic (C-AFM) characterization of thin dielectric films. The surface photovoltage induced by the laser beam of an atomic force microscope can enhance the electrical field across the studied dielectric film, decreasing the onset voltage of the leakage current, resulting in a modified C-AFM image with a larger current distribution. Moreover, the experimental results also revealed that the influence of the photovoltaic effect on C-AFM would be more significant for dielectric films that are grown on a substrate with a higher carrier concentration.
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77.55.-g Dielectric thin films
73.50.Pz Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena
42.62.-b Laser applications

Quantum dots confined in nanoporous alumina membranes

Jun Xu, Jianfeng Xia, Jun Wang, Joseph Shinar, and Zhiqun Lin

Appl. Phys. Lett. 89, 133110 (2006); http://dx.doi.org/10.1063/1.2357877 (3 pages) | Cited 17 times

Online Publication Date: 26 September 2006

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CdSe/ZnS core/shell quantum dots (QDs) were filled into porous alumina membranes (PAMs) by dip coating. The deposition of QDs induced changes in the refractive index of the PAMs. The amount of absorbed QDs was quantified by fitting the reflection and transmission spectra observed experimentally with one side open and freestanding (i.e., with two sides open) PAMs employed, respectively. The fluorescence of the QDs was found to be retained within the cylindrical nanopores of the PAMs.
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78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.16.-c Methods of micro- and nanofabrication and processing

Modulating the thickness of the resist pattern for controlling size and depth of submicron reversed domains in lithium niobate

P. Ferraro and S. Grilli

Appl. Phys. Lett. 89, 133111 (2006); http://dx.doi.org/10.1063/1.2357928 (3 pages) | Cited 7 times

Online Publication Date: 26 September 2006

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In this letter the electric field overpoling is used in combination with two-dimensional resist gratings exhibiting modulated topography and obtained by moiré interference lithography. The technique allows one to fabricate shallow submicron domains with lateral size and depth modulated according to the resist profile. Simulations of the electric field distribution in the crystal, in this specific poling configuration, are performed to interpret the mechanism leading to the formation of those surface domains. The results show that in principle complex domain structures could be designed for applications in the field of photonic crystals.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
81.16.Nd Micro- and nanolithography
77.22.Ej Polarization and depolarization

Conductivity scaling with bundle length and diameter in single walled carbon nanotube networks

David Hecht, Liangbing Hu, and George Grüner

Appl. Phys. Lett. 89, 133112 (2006); http://dx.doi.org/10.1063/1.2356999 (3 pages) | Cited 64 times

Online Publication Date: 27 September 2006

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Transparent single walled carbon nanotube (SWNT) networks were printed on plastic substrates. Nanotubes in the network form small bundles, and the authors evaluated the dc conductivity (σdc) as a function of the average bundle length (Lav) in the network. They find σdc to vary as σdc ∼ Lav1.46 for bundles of the same diameter and give a qualitative argument for why this agrees with a model where the resistance between SWNT bundles dominates the overall network resistance.
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61.46.Fg Nanotubes
73.63.Fg Nanotubes

High-performance ZnO nanowire field effect transistors

Pai-Chun Chang, Zhiyong Fan, Chung-Jen Chien, Daniel Stichtenoth, Carsten Ronning, and Jia Grace Lu

Appl. Phys. Lett. 89, 133113 (2006); http://dx.doi.org/10.1063/1.2357013 (3 pages) | Cited 76 times

Online Publication Date: 27 September 2006

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ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility.
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85.30.Tv Field effect devices
73.63.Nm Quantum wires

ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

E. Janik, J. Sadowski, P. Dłużewski, S. Kret, L. T. Baczewski, A. Petroutchik, E. Łusakowska, J. Wróbel, W. Zaleszczyk, G. Karczewski, T. Wojtowicz, and A. Presz

Appl. Phys. Lett. 89, 133114 (2006); http://dx.doi.org/10.1063/1.2357334 (3 pages) | Cited 26 times

Online Publication Date: 27 September 2006

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ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 μm were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3–20 Å thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55° to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is ⟨111⟩.
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68.65.La Quantum wires (patterned in quantum wells)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Cc Kinetics of defect formation and annealing
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

InSb and InSb:N multiple quantum dots

Fariba Hatami, Seongsin M. Kim, Homan B. Yuen, and James S. Harris

Appl. Phys. Lett. 89, 133115 (2006); http://dx.doi.org/10.1063/1.2357546 (3 pages) | Cited 8 times

Online Publication Date: 27 September 2006

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The authors report the growth and structural properties of InSb and InSb:N quantum dots on InAs and GaAs substrates. Strain induced self-assembled quantum dots are grown using solid-source molecular beam epitaxy. For improved growth control, they developed a growth technique similar to atomic-layer epitaxial methods. InSb and InSb:N multiple quantum dots formed on both InAs and GaAs. They explain the formation of multiple quantum dots by the anisotropic distribution of strain energy within the quantum dot, the long adatom lifetime during atomic-layer epitaxy, and the low bond energy of InSb.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.16.Dn Self-assembly

Two-dimensional tungsten oxide nanowire networks

Y. M. Zhao, Y. H. Li, I. Ahmad, D. G. McCartney, Y. Q. Zhu, and W. B. Hu

Appl. Phys. Lett. 89, 133116 (2006); http://dx.doi.org/10.1063/1.2357609 (3 pages) | Cited 13 times

Online Publication Date: 27 September 2006

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The authors report the synthesis and characterization of two-dimensional (2D) single crystalline nanonetworks consisting of tungsten oxide nanowires with diameters of ca. 20 nm. The 2D networks are believed to result from the nanowire growth along the four crystallographic equivalent directions of ⟨110⟩ in the tetragonal WO2.9 structure. These 2D tungsten oxide networks may be potential precursors for creating 2D networks comprising WS2 nanotubes.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Interpenetrating multiwall carbon nanotube electrodes for organic solar cells

Anthony J. Miller, Ross A. Hatton, and S. Ravi P. Silva

Appl. Phys. Lett. 89, 133117 (2006); http://dx.doi.org/10.1063/1.2357844 (3 pages) | Cited 36 times

Online Publication Date: 27 September 2006

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Low concentrations of multiwall carbon nanotubes (MWCNTs) ( ∼ 1 wt %) uniformly distributed within the donor layer of a heterojunction organic solar cell are shown to be an effective means of greatly reducing cell series resistance without compromising cell shunt resistance, resulting in an increase in cell fill factor of 50–60%. By chemically functionalizing MWCNTs with polar surface moieties, it is also possible to manipulate device open circuit voltage. The results of this study demonstrate that MWCNTs have excellent potential as a versatile interpenetrating electrode material for organic solar cells.
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84.60.Jt Photoelectric conversion

Single-crystal CdSe nanoribbon field-effect transistors and photoelectric applications

J. S. Jie, W. J. Zhang, Y. Jiang, and S. T. Lee

Appl. Phys. Lett. 89, 133118 (2006); http://dx.doi.org/10.1063/1.2345255 (3 pages) | Cited 21 times

Online Publication Date: 28 September 2006

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Field-effect transistors made of individual CdSe nanoribbons were fabricated and characterized. The CdSe nanoribbon showed n-type semiconducting characteristics, while the transistors revealed a threshold voltage of 20.9 V, an on-off ratio >104, and an electron mobility of 9.6 cm2/V s in the dark. CdSe nanoribbons showed high sensitivity to above-band-gap irradiation with four-orders-of-magnitude increase in conductance and millisecond response speed. The increase of electron mobility due to light irradiation was demonstrated to contribute to increased photoconductance.
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85.30.Tv Field effect devices
85.60.-q Optoelectronic devices

Real-time detection of probe loss in atomic force microscopy

Tathagata De, Pranav Agarwal, Deepak R. Sahoo, and Murti V. Salapaka

Appl. Phys. Lett. 89, 133119 (2006); http://dx.doi.org/10.1063/1.2357876 (3 pages) | Cited 3 times

Online Publication Date: 28 September 2006

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In this letter, a real-time methodology is developed to determine regions of dynamic atomic force microscopy based image where the cantilever fails to be an effective probe of the sample. Conventional imaging signals such as the amplitude signal and the vertical piezoactuation signal cannot identify the areas of probe loss. It is experimentally demonstrated that probe-loss affected portion of the image can be unambiguously identified by a real-time signal called reliability index. Reliability index, apart from indicating the probe-loss affected regions, can be used to minimize probe-loss affected regions of the image, thus aiding high speed AFM applications.
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07.79.Lh Atomic force microscopes
42.30.Va Image forming and processing

Field effects on electron conduction through self-assembled monolayers

Gwo-Jen Hwang, Pei-Ren Jeng, Chenhsin Lien, C. S. Chen, Yung-Shiang Tsao, Hung-Shun Hwang, Sheng-Quan Xu, T. M. Hong, and Y. C. Chou

Appl. Phys. Lett. 89, 133120 (2006); http://dx.doi.org/10.1063/1.2357883 (3 pages)

Online Publication Date: 28 September 2006

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The electronic conduction through the self-assembled monolayer (SAM) can be modulated by the electric potential applied to the silicon gate electrode surrounding the SAM. The dependence of the current through SAM on the gate voltage can be explained that the renormalized molecular energy levels are swept through the window between the Fermi levels of the source and drain electrodes. The effects of the lowest unoccupied molecular orbital and a hybrid energy level near the Fermi level in the transmission spectrum can be identified.
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85.65.+h Molecular electronic devices

InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition

S. S. Yi, G. Girolami, J. Amano, M. Saif Islam, S. Sharma, T. I. Kamins, and I. Kimukin

Appl. Phys. Lett. 89, 133121 (2006); http://dx.doi.org/10.1063/1.2357890 (3 pages) | Cited 13 times

Online Publication Date: 28 September 2006

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The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We report epitaxial growth on (111)-oriented Si surfaces of highly aligned, single crystalline InP nanowires by chemical vapor deposition catalyzed by Au. We demonstrate laterally oriented InP nanowires bridging between vertical (111) Si surfaces formed by anisotropically etching a (110)-oriented Si substrate or the top Si layer of a silicon-on-insulator wafer. This method of connecting nanowires offers a facile way of integrating nanoscale III-V optoelectronic and photonic devices with Si.
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81.05.Ea III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.65.Cf Surface cleaning, etching, patterning

Electrical conductivity and dielectric properties of multiwalled carbon nanotube and alumina composites

Kaleem Ahmad, Wei Pan, and Sui-Lin Shi

Appl. Phys. Lett. 89, 133122 (2006); http://dx.doi.org/10.1063/1.2357920 (3 pages) | Cited 53 times

Online Publication Date: 28 September 2006

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Alumina/multiwalled carbon nanotube (MWNT) composites with different MWNT contents ranging from 0.5 to 10 vol % were prepared by spark plasma sintering technique. The dc electrical conductivity and dielectric properties of the composites were investigated and percolation theory was applied to demonstrate the electrical property transition from insulator to conductor. The experimental results have shown that the electrical conductivity increased sharply as the content of MWNTs was close to percolation threshold of 0.79 vol %. In the low frequency range, the dielectric constant reached as high as 5000 when the content of MWNTs was at 1.74 vol % and nearly frequency independent.
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72.60.+g Mixed conductivity and conductivity transitions
77.22.Ch Permittivity (dielectric function)

Current-voltage characteristics of layer-by-layer self-assembled colloidal thin films

S. H. M. Jafri, J. Dutta, D. Sweatman, and A. B. Sharma

Appl. Phys. Lett. 89, 133123 (2006); http://dx.doi.org/10.1063/1.2358089 (3 pages) | Cited 2 times

Online Publication Date: 29 September 2006

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Self-organized construction of advanced materials and devices has been carried out starting with tailor-made colloidal nanoparticles as building blocks. Multilayer thin films of gold nanoparticles stabilized by glutamates and zinc sulfide nanoparticles capped with chitosan were self-organized by a modified polyelectrolyte deposition process. Resistive current-voltage characteristic was observed in devices (less than 50 layers). The conduction onset in thicker devices (>50 layers) was found to be at applied voltages of ∼ 1.6, ∼ 1.94, and ∼ 2.79 V for 75, 100, and 150 layer structures, respectively. Devices exhibit similar behavior in forward and reverse biases and the electrical characteristics were repeatable.
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81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys
81.05.Dz II-VI semiconductors
73.63.Bd Nanocrystalline materials
73.21.Ac Multilayers
73.63.Rt Nanoscale contacts

Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices

Zhixian Zhou, R. Jin, Gyula Eres, Alaska Subedi, and D. Mandrus

Appl. Phys. Lett. 89, 133124 (2006); http://dx.doi.org/10.1063/1.2354450 (3 pages) | Cited 6 times

Online Publication Date: 29 September 2006

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Metallic single wall carbon nanotube devices were characterized using low temperature transport measurements to study how the growth conditions affect defect formation in carbon nanotubes. Suspended carbon nanotube devices were grown in situ by a molecular beam growth method on a pair of catalyst islands located on opposing Au electrodes fabricated by electron beam lithography. The authors present experimental evidence that defect formation in carbon nanotubes, in addition to the well known growth temperature dependence, is also affected by the nature and the composition of the carbon growth gases.
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85.35.Kt Nanotube devices
85.40.Hp Lithography, masks and pattern transfer

Fabrication, assembly, and electrical characterization of CuO nanofibers

Hui Wu, Dandan Lin, and Wei Pan

Appl. Phys. Lett. 89, 133125 (2006); http://dx.doi.org/10.1063/1.2355474 (3 pages) | Cited 40 times

Online Publication Date: 29 September 2006

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The authors report on the assembly and electrical properties of ultralong copper oxide (CuO) nanofibers prepared by electrospinning method. The prepared CuO nanofibers were polycrystalline, with diameter of ∼ 60 nm and length over 100 μm. By a specially designed fiber collector, single CuO nanofiber field-effect transistor (FET) was assembled directly. Electrical transport measurement was conducted on the nanowire FET device, showing that CuO nanofibers are intrinsic p-type semiconductor. Electrospinning is thus proposed as a simple and low-cost method of fabricating one-dimensional semiconductive ceramic FETs.
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68.65.La Quantum wires (patterned in quantum wells)
81.16.-c Methods of micro- and nanofabrication and processing
81.07.Bc Nanocrystalline materials
81.07.Vb Quantum wires
85.30.Tv Field effect devices
73.63.Nm Quantum wires
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