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2 Oct 2006

Volume 89, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 142101 (2006); http://dx.doi.org/10.1063/1.2358202 (3 pages)

H. C. Lin, P. D. Ye, Y. Xuan, G. Lu, A. Facchetti, and T. J. Marks
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Nanosecond laser ablation of gold nanoparticle films

Seung H. Ko, Yeonho Choi, David J. Hwang, Costas P. Grigoropoulos, Jaewon Chung, and Dimos Poulikakos

Appl. Phys. Lett. 89, 141126 (2006); http://dx.doi.org/10.1063/1.2360241 (3 pages) | Cited 27 times

Online Publication Date: 6 October 2006

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Ablation of self-assembled monolayer protected gold nanoparticle films on polyimide was explored using a nanosecond laser. When the nanoparticle film was ablated and subsequently thermally sintered to a continuous film, the elevated rim structure by the expulsion of molten pool could be avoided and the ablation threshold fluence was reduced to a value at least ten times lower than the reported threshold for the gold film. This could be explained by the unusual properties of nanoparticle film such as low melting temperature, weak bonding between nanoparticles, efficient laser energy deposition, and reduced heat loss. Finally, submicron lines were demonstrated.
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81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys
81.16.Mk Laser-assisted deposition
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Optical polarizer/isolator based on a rectangular waveguide with helical grooves

Gennady Shvets

Appl. Phys. Lett. 89, 141127 (2006); http://dx.doi.org/10.1063/1.2355466 (3 pages) | Cited 16 times

Online Publication Date: 6 October 2006

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A chirality-based approach to making a one-way waveguide that can be used as an optical isolator or a polarizer is described. The waveguide is rectangular, and chirality is introduced by making slanted rectangular grooves on the waveguide walls. Chirality of the waveguide manifests as a strong circular dichroism and is responsible for transmitting one circular polarization of light and reflecting the other. Optical isolation of the propagating circular polarization is accomplished when the chiral waveguide is placed in front of a nonchiral optical device. Even the crudest implementations of chirality are shown to exhibit significant circular dichroism.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers
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Microwave plasma-assisted premixed flame combustion

K. W. Hemawan, C. L. Romel, S. Zuo, I. S. Wichman, T. A. Grotjohn, and J. Asmussen

Appl. Phys. Lett. 89, 141501 (2006); http://dx.doi.org/10.1063/1.2358213 (3 pages) | Cited 7 times

Online Publication Date: 4 October 2006

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A compact microwave plasma/combustion torch has been operated at atmospheric pressure in both plasma-only and plasma-assisted premixed combustion modes. The torch burns CH4/O2 mixtures with plasma enhancement that modifies combustion, flame structure, flame size, and flame power density. The microwave energy also extends the fuel-lean burn limits.
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82.33.Vx Reactions in flames, combustion, and explosions
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
52.80.Pi High-frequency and RF discharges

Charge state dependence of cathodic vacuum arc ion energy and velocity distributions

Johanna Rosén, Jochen M. Schneider, and André Anders

Appl. Phys. Lett. 89, 141502 (2006); http://dx.doi.org/10.1063/1.2361197 (3 pages) | Cited 7 times

Online Publication Date: 5 October 2006

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In the literature, conflicting conclusions are reported concerning the charge state dependence of cathodic arc ion energy and velocity distributions. It appears that data from electrostatic energy analyzers indicate charge state dependence of ion energy, whereas time-of-flight methods support charge state independence of ion velocity. Here the authors present charge-state-resolved ion energy distributions and calculate the corresponding ion velocity distributions in aluminum vacuum arc plasma. They show that the conflicting conclusions reported in the literature for the two different characterization techniques may originate from the commonly employed data interpretation of energy and velocity, in which peak values and average values are not carefully distinguished.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.80.Vp Discharge in vacuum
52.50.Dg Plasma sources
52.25.Fi Transport properties
52.70.Ds Electric and magnetic measurements
52.70.Nc Particle measurements

Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

D. S. Choi, A. A. Balandin, M. S. Leung, G. W. Stupian, N. Presser, S. W. Chung, J. R. Heath, A. Khitun, and K. L. Wang

Appl. Phys. Lett. 89, 141503 (2006); http://dx.doi.org/10.1063/1.2357847 (3 pages) | Cited 18 times

Online Publication Date: 6 October 2006

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The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D ( ∼ 50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.
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73.63.Nm Quantum wires
73.21.Hb Quantum wires
72.60.+g Mixed conductivity and conductivity transitions
72.15.Jf Thermoelectric and thermomagnetic effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
81.16.Nd Micro- and nanolithography
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Luminescence properties of ZnO layers grown on Si-on-insulator substrates

Bhupendra Kumar, Hao Gong, S. Vicknesh, S. J. Chua, and S. Tripathy

Appl. Phys. Lett. 89, 141901 (2006); http://dx.doi.org/10.1063/1.2357870 (3 pages) | Cited 23 times

Online Publication Date: 2 October 2006

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The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E2high optical phonon mode near 438 cm−1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05–3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems.
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81.05.Dz II-VI semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
81.15.Cd Deposition by sputtering
78.30.Fs III-V and II-VI semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Effects of deformation on band-edge luminescence of hexagonal boron nitride single crystals

Kenji Watanabe, Takashi Taniguchi, Takashi Kuroda, and Hisao Kanda

Appl. Phys. Lett. 89, 141902 (2006); http://dx.doi.org/10.1063/1.2358314 (3 pages) | Cited 27 times

Online Publication Date: 2 October 2006

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The authors observed a drastic change in exciton-related luminescence in deformed hexagonal boron nitride single crystals. High quality single crystals that showed a free exciton luminescence band at 215 nm were used as a starting material. They were pinched between aluminum plates and pressed with the tips of the first two fingers. The pressed crystals dominantly showed band-edge luminescence at the 227 instead of the 215 nm band. The authors attribute this 227 nm band to bound exciton luminescence caused by the stacking disorder produced by the mechanical deformation.
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78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Pressure-induced structural transition in AlN nanowires

L. H. Shen, X. F. Li, Y. M. Ma, K. F. Yang, W. W. Lei, Q. L. Cui, and G. T. Zou

Appl. Phys. Lett. 89, 141903 (2006); http://dx.doi.org/10.1063/1.2358125 (3 pages) | Cited 24 times

Online Publication Date: 2 October 2006

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The structural transition of AlN nanowires was investigated under pressures up to 51.1 GPa by in situ angle dispersive high-pressure x-ray diffraction using synchrotron radiation source and a diamond anvil cell. A pressure-induced wurtzite to rocksalt phase transition starts at 24.9 GPa and completes at 45.4 GPa. The high-pressure behaviors of AlN nanowires differing from the bulk and nanocrystal AlN might arise from the intrinsic geometry in nanowires.
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62.50.-p High-pressure effects in solids and liquids
68.65.La Quantum wires (patterned in quantum wells)
64.70.K- Solid-solid transitions
61.46.Hk Nanocrystals

Super-resolution imaging of dielectric objects using a slab of left-handed material

Lei Zhao and Tie Jun Cui

Appl. Phys. Lett. 89, 141904 (2006); http://dx.doi.org/10.1063/1.2358297 (3 pages) | Cited 8 times

Online Publication Date: 2 October 2006

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The Born iterative method has been presented to study two-dimensional inverse scattering problems for dielectric objects with the aid of left-handed material (LHM). Super-resolution imaging can be achieved since the LHM slab could amplify evanescent waves emitted from transmitters, which are interacted with the dielectric objects and then captured by receivers. The evanescent waves contain high-frequency spectra of dielectric objects, leading to significant improvement of resolution in imaging. Simulation results are presented to verify the super-resolution imaging.
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42.70.-a Optical materials
42.30.Va Image forming and processing

Metal foil method for noncontact measurement of lateral vibrations of a nonmetallic cylinder by a solenoid

Soon Woo Han, Young Bong Bang, and Yoon Young Kim

Appl. Phys. Lett. 89, 141905 (2006); http://dx.doi.org/10.1063/1.2358208 (3 pages) | Cited 2 times

Online Publication Date: 3 October 2006

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This investigation shows that if a solenoid encircles a metal foil loop wound around a nonmetallic cylinder vibrating laterally, an electromotive force is induced in the solenoid. The induction is possible only when the foil loop is complete and an antisymmetric magnetic field is applied to the foil. In this work, stationary permanent magnets were used. Because the solenoid is the sensing element, no physical contact between the element and a test specimen is required. The effects of the metal foil thickness and width on the measurement sensitivity were studied and vibration modal testing of an acryl cylinder was performed.
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07.10.-h Mechanical instruments and equipment

Second-harmonic generation with magnetic-field controllabilities

C. Z. Fan and J. P. Huang

Appl. Phys. Lett. 89, 141906 (2006); http://dx.doi.org/10.1063/1.2356089 (3 pages) | Cited 11 times

Online Publication Date: 3 October 2006

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The authors theoretically exploit a class of nonlinear optical materials, which are made of single domain ferromagnetic nanoparticles coated by a nonmagnetic nanoshell with an intrinsic second-harmonic generation (SHG) susceptibility in a nonmagnetic host fluid. The SHG of such materials possess magnetic-field controllabilities, i.e., magnetic-field-controllable anisotropy, redshift, and enhancement, which are caused to appear by the shift of a resonant plasmon frequency due to the formation of the chains of the coated nanoparticles.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
75.50.Tt Fine-particle systems; nanocrystalline materials
42.65.An Optical susceptibility, hyperpolarizability
75.30.Gw Magnetic anisotropy
75.60.Ch Domain walls and domain structure

Ablation of molecular solids under nanosecond laser pulses: The role of inertial confinement

Danny Perez, Laurent J. Lewis, Patrick Lorazo, and Michel Meunier

Appl. Phys. Lett. 89, 141907 (2006); http://dx.doi.org/10.1063/1.2358941 (3 pages) | Cited 9 times

Online Publication Date: 3 October 2006

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The thermal routes to ablation in molecular solids having a long (micron scale) optical penetration depth are investigated under nanosecond laser pulses using a two-dimensional molecular-dynamics model. The authors demonstrate that the mechanisms of matter removal are mainly determined by the local degree of inertial confinement; by increasing level of confinement, these are (trivial) fragmentation, phase explosion, and heterogeneous nucleation of vapor bubbles at solid-liquid boundaries. The thermodynamic pathways to ablation are shown to be different from those predicted by the model of Miotello and Kelly [Appl. Phys. Lett. 67, 3535 (1995) ; Appl. Phys. A: Mater. Sci. Process. 69, S67 (1999) ].
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79.20.Ds Laser-beam impact phenomena
65.40.G- Other thermodynamical quantities

Structural and mechanical properties of Sn-based intermetallics from ab initio calculations

N. T. S. Lee, V. B. C. Tan, and K. M. Lim

Appl. Phys. Lett. 89, 141908 (2006); http://dx.doi.org/10.1063/1.2358832 (3 pages) | Cited 7 times

Online Publication Date: 4 October 2006

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Density functional theory calculations on the structural and mechanical properties of two intermetallic compounds, Ni3Sn4 and Ag3Sn, are reported. The first-principles calculations predict the lattice constants and elastic constants of these Sn-based compounds. The results for lattice constants are found to be within 3% error of the experimental values. Bounds on polycrystalline elastic properties were then obtained, and these are close to the range of experimental values reported. The results provide further evidence for the usefulness and applicability of first-principles calculations when experimental data are sparse or unavailable.
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61.66.Dk Alloys
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Compression of stacked niobium bilayers: Void-induced strain localization at interfaces

Y. Liu, D. Brunner, and M. Ruehle

Appl. Phys. Lett. 89, 141909 (2006); http://dx.doi.org/10.1063/1.2358932 (3 pages)

Online Publication Date: 4 October 2006

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An optical full-field strain mapping technique has been used to provide direct evidence for the existence of a highly localized strain at the interface of stacked Nb/Nb bilayers during the compression tests loaded normal to the interface. No such strain localization is found in the bulk Nb away from the interface. The strain localization at the interfaces is due to a high void fraction resulting from the rough surfaces of Nb in contact, which prevents the extension of deformation bands in bulk Nb crossing the interface, while no distinguished feature from the stress-strain curve is detected.
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81.05.Bx Metals, semimetals, and alloys
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
61.72.Qq Microscopic defects (voids, inclusions, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Theoretical hardness of PtN2 with pyrite structure

Huiyang Gou, Li Hou, Jingwu Zhang, Guifang Sun, Lihua Gao, and Faming Gao

Appl. Phys. Lett. 89, 141910 (2006); http://dx.doi.org/10.1063/1.2359434 (3 pages) | Cited 25 times

Online Publication Date: 4 October 2006

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Using first-principles technique, the authors have investigated the structural, mechanical, and electronic properties of the PtN2 with cubic pyrite and orthorhombic FeS2 structure. The calculated results of the pyrite-type PtN2 are in agreement with the available theoretical and experimental values. The pyrite-type PtN2 is more energetically stable under the ambient condition. Results indicate that the two PtN2 phases are semiconducting materials. Based on Mulliken overlap population analysis in first-principles technique, the hardness of both the cubic and orthorhombic PtN2 is predicted. Results show that the PtN2 with pyrite structure possesses excellent mechanical properties.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
68.35.Gy Mechanical properties; surface strains
62.20.Qp Friction, tribology, and hardness

Determination of Fe3+ sites in a NaFeSi2O6 glass by neutron diffraction with isotopic substitution coupled with numerical simulation

Coralie Weigel, Laurent Cormier, Laurence Galoisy, Georges Calas, Daniel Bowron, and Brigitte Beuneu

Appl. Phys. Lett. 89, 141911 (2006); http://dx.doi.org/10.1063/1.2359532 (3 pages) | Cited 1 time

Online Publication Date: 4 October 2006

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Isotopic substitution in neutron diffraction combined with empirical potential structure refinement simulations has been employed to probe the sites occupied by Fe3+ and Fe2+ in a NaFeSi2O6 glass. This study reveals the presence of two populations of Fe3+ sites. 95% of Fe3+ is in tetrahedral sites (dFe3+–O = 1.866±0.001 Å), as the remainder ferric iron and ferrous iron ( ∼ 20% of total Fe) are five coordinated.
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61.43.Fs Glasses

Pulsed molecular beam scattering of a planar-shaped organic molecule on regularly stepped surfaces of hydrogen-terminated Si(111)

Toshihiro Shimada, Hisashi Ichikawa, and Koichiro Saiki

Appl. Phys. Lett. 89, 141912 (2006); http://dx.doi.org/10.1063/1.2358216 (3 pages) | Cited 1 time

Online Publication Date: 5 October 2006

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Strong dependence of surface residence time of a planar organic molecule (hydrogen phthalocyanine) on vicinal surfaces of hydrogen-terminated Si(111) was observed in pulsed molecular beam scattering experiments. These results can be explained by the difference in the microscopic contact area of the molecules on the surface, which determines the binding force between the migrating molecules and the surface. The relationship between the observed behavior and the organic thin film growth is discussed.
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68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Origin of the blue photoluminescence from SiO2(SiC)/SiC on Si substrate

Zheng Chen, Yuxia Wang, Youming Zou, Jianwen Wang, Yun Li, and Hongjuan Zhang

Appl. Phys. Lett. 89, 141913 (2006); http://dx.doi.org/10.1063/1.2360231 (3 pages) | Cited 8 times

Online Publication Date: 5 October 2006

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SiC film is prepared by heating the polystyrene/Si in 1 atm ambient Ar at 1270 °C. The as-grown SiC film is characterized by scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Based on the results, it is suggested that a SiO2(SiC) layer is located on the top of the as-grown SiC film. A blue photoluminescence band is observed from the as-grown sample. The photoluminescence band has the same origin as those from silica nanowires and SiC nanostructures and is associated with the near interface traps at the interface of SiO2/SiC or SiO2/Si.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electromigration induced ductile-to-brittle transition in lead-free solder joints

Fei Ren, Jae-Woong Nah, K. N. Tu, Bingshou Xiong, Luhua Xu, and John H. L. Pang

Appl. Phys. Lett. 89, 141914 (2006); http://dx.doi.org/10.1063/1.2358113 (3 pages) | Cited 25 times

Online Publication Date: 6 October 2006

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The effect of electromigration on ductile-to-brittle transition in flip chip solder joints has been studied using one-dimensional bamboo-type samples of eutectic 95.5Sn–3.8Ag–0.7Cu solder joined by Cu wires at two ends. Both electrical current and tensile stress were applied to the samples either in serial or in parallel. In serial tests, the strain rate was 6×10−3. In parallel test, the creep stress was 7 MPa. The current density applied was (1–5)×103 A/cm2. The working temperature was 100–150 °C. In both tests, the authors observed the ductile-to-brittle transition in which the fracture migrates from the middle to the cathode interface of the joint with increasing current density and time. The transition is explained by the polarity effect of electromigration, especially the accumulation of vacancies at the cathode interface.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
66.30.Qa Electromigration
81.40.Lm Deformation, plasticity, and creep
62.20.Hg Creep
61.72.J- Point defects and defect clusters

Anomalous thermomechanical properties and laser-induced densification of vitreous silica

Liping Huang and John Kieffer

Appl. Phys. Lett. 89, 141915 (2006); http://dx.doi.org/10.1063/1.2357016 (3 pages) | Cited 5 times

Online Publication Date: 6 October 2006

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The authors studied the anomalous behaviors of vitreous silica under the combined influence of high temperature and pressure, by using molecular dynamics simulations based on a charge-transfer three-body potential. Accordingly, anomalous properties, such as the minimum in the bulk modulus at ∼ 2–3 GPa and the negative thermal expansion while under pressure, are inherently connected to the ability of the glass to undergo irreversible densification. Their simulations reveal the structural features responsible for this behavior, as well as the extent to which these properties can be tailored through specific processing routes and hence create glass that is less susceptible to radiation damage.
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65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
61.43.Fs Glasses
61.43.Bn Structural modeling: serial-addition models, computer simulation
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.50.-p High-pressure effects in solids and liquids
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

H. C. Lin, P. D. Ye, Y. Xuan, G. Lu, A. Facchetti, and T. J. Marks

Appl. Phys. Lett. 89, 142101 (2006); http://dx.doi.org/10.1063/1.2358202 (3 pages) | Cited 9 times

Online Publication Date: 2 October 2006

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High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density <10−5 A/cm2 at a gate bias smaller than 3 V, a maximum drain current of 370 mA/mm at a forward gate bias of 2 V, and a maximum intrinsic transconductance of 170 mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.
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85.30.Tv Field effect devices
81.65.Cf Surface cleaning, etching, patterning
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Ballistic admittance: Periodic variation with frequency

A. P. Dmitriev and M. S. Shur

Appl. Phys. Lett. 89, 142102 (2006); http://dx.doi.org/10.1063/1.2357933 (3 pages) | Cited 1 time

Online Publication Date: 2 October 2006

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The authors show that both real and imaginary parts of the admittance of short (ballistic or quasiballistic) semiconductor structures are oscillatory functions of the frequency with the period determined by the inverse electron transit time with the Fermi velocity. This oscillatory dependence is caused by the phase difference between the electrons injected from the opposite contacts.
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73.23.Ad Ballistic transport
72.20.Fr Low-field transport and mobility; piezoresistance
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Optical signatures of asymmetric fractal diffusion of electron-hole plasma in semiconductor quantum wells

J. B. Borges, S. W. da Silva, P. C. Morais, and A. F. G. Monte

Appl. Phys. Lett. 89, 142103 (2006); http://dx.doi.org/10.1063/1.2358842 (3 pages) | Cited 1 time

Online Publication Date: 2 October 2006

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The lateral electron-hole transport in intrinsic In0.53Ga0.47As/InP quantum well, grown on tilted InP substrate, was investigated by scanning the photoluminescence intensity profile on the sample’s surface. Simulations of the asymmetric carrier density profile, using a non-Fickian diffusion equation described by the Lévy statistics [ S. I. Denisov et al., Phys. Rev. E 73, 036120 (2006) ], show that anomalous diffusion observed along the y direction (perpendicular to the terrace edges) is associated with the presence of Auger recombination, more likely induced by the fractal interface morphology.
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78.67.De Quantum wells
73.63.Hs Quantum wells
72.30.+q High-frequency effects; plasma effects
78.55.Cr III-V semiconductors
66.30.-h Diffusion in solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells

W. H. Lau, V. Sih, N. P. Stern, R. C. Myers, D. A. Buell, A. C. Gossard, and D. D. Awschalom

Appl. Phys. Lett. 89, 142104 (2006); http://dx.doi.org/10.1063/1.2358931 (3 pages) | Cited 8 times

Online Publication Date: 3 October 2006

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Time-resolved Kerr rotation spectroscopy is used to monitor the room temperature electron spin dynamics of optical telecommunication wavelength AlInGaAs multiple quantum wells lattice matched to InP. The authors found that electron spin coherence times and effective g factors vary as a function of aluminum concentration. The measured electron spin coherence times of these multiple quantum wells, with wavelengths ranging from 1.26 to 1.53 μm, reach approximately 100 ps at room temperature, and the measured electron effective g factors are in the range from −2.3 to −1.1.
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78.47.-p Spectroscopy of solid state dynamics
78.67.De Quantum wells
78.66.Fd III-V semiconductors
72.25.Dc Spin polarized transport in semiconductors
78.20.Ls Magneto-optical effects
78.20.Ek Optical activity

Electrical transport properties of ferromagnetic GaxCr1−xN thin films

Stephen Y. Wu and N. Newman

Appl. Phys. Lett. 89, 142105 (2006); http://dx.doi.org/10.1063/1.2357603 (3 pages) | Cited 11 times

Online Publication Date: 3 October 2006

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The authors report the transport properties of ferromagnetic Ga0.97Cr0.03N films with a Curie temperature of over 900 K. Samples synthesized under conditions that produce the maximum occupancy of Cr atoms on the Ga site ( ∼ 90%) and the maximum ferromagnetic moment of ∼ 0.6μB/Cr (775 °C growth temperature) exhibit a T−1/4 dependence of resistivity, indicative of Mott [J. Non-Cryst. Solids 1, 1 (1968) ] phonon-assisted variable range hopping between deep level defects. The observation of variable range hopping in ferromagnetic films indicates that ferromagnetism results from a double-exchange-type mechanism. Films grown at higher temperatures (>800 °C) show enhanced Cr segregation, properties associated with percolative transport, and very small, if any, ferromagnetic moments.
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73.61.Ey III-V semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Cr Saturation moments and magnetic susceptibilities
73.50.Dn Low-field transport and mobility; piezoresistance
64.75.-g Phase equilibria
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