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9 Oct 2006

Volume 89, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 89, 151920 (2006); http://dx.doi.org/10.1063/1.2360906 (3 pages)

Aycan Yurtsever, Matthew Weyland, and David A. Muller
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Observation of ferroelectric domain patterns in nanocrystalline BaTiO3 ceramics

Xiangyun Deng, Xiaohui Wang, Liangliang Chen, Hai Wen, and Longtu Li

Appl. Phys. Lett. 89, 152901 (2006); http://dx.doi.org/10.1063/1.2360244 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2006

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Scanning nonlinear dielectric microscopy measurements revealed temperature-dependent variations in contrast, which was attributed to domain rearrangements in 20 nm BaTiO3 ceramics. The experiment result showed the presence of a-c 90° nanoferroelectric domains in 20 nm BaTiO3 ceramics from 25 to 290 °C; furthermore the piezoresponse hysteresis loops showed that the 20 nm BaTiO3 ceramics were switchable and ferroelectricity was retained at the high temperature of 290 °C, demonstrating the existence of nanoferroelectric domains and the ferroelectric phase still retained above Curie temperature in 20 nm BaTiO3 ceramics, which confirmed the diffused phase transition character in nanograin BaTiO3 ceramics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point

Ferroelectric domain inversion: The role of humidity

D. Dahan, M. Molotskii, G. Rosenman, and Y. Rosenwaks

Appl. Phys. Lett. 89, 152902 (2006); http://dx.doi.org/10.1063/1.2358855 (3 pages) | Cited 24 times

Online Publication Date: 11 October 2006

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The authors report on the effect of ambient humidity on domain inversion in ferroelectrics using atomic force microscopy. It is shown that the size of single domains inverted under low humidity in stoichiometric lithium tantalate single crystals is much smaller relative to ambient conditions. These differences are due to the much smaller tip-sample capacitance under low humidity. This phenomenon paves the way for the use of atomic force microscopy to tailor various nanodomain configurations for nonlinear optical applications.
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77.80.Dj Domain structure; hysteresis
61.66.Bi Elemental solids
61.66.Dk Alloys

Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)

P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, and R. M. Wallace

Appl. Phys. Lett. 89, 152903 (2006); http://dx.doi.org/10.1063/1.2361170 (3 pages) | Cited 6 times

Online Publication Date: 11 October 2006

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The thermal stability of sputter deposited LaAlOx and lanthanum aluminum oxynitride (LaAlON) dielectrics on top of Si (100) was evaluated after 1000 °C rapid thermal annealing (RTA). A nitrogen concentration of ∼ 3 at. % in the bulk LaAlON film was found to suppress crystallization as well as metal (lanthanum and aluminum) outdiffusion into the Si (100) substrate after the RTA treatment. These results suggest that film microstructure should be carefully controlled to inhibit impurity diffusion in the conventional gate stack fabrication process.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.Cc Kinetics of defect formation and annealing
64.70.K- Solid-solid transitions
68.55.-a Thin film structure and morphology
66.30.-h Diffusion in solids

First principles calculations of oxygen vacancy passivation by fluorine in hafnium oxide

Wei Chen, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang, and Li-Kang Wang

Appl. Phys. Lett. 89, 152904 (2006); http://dx.doi.org/10.1063/1.2358121 (3 pages) | Cited 10 times

Online Publication Date: 12 October 2006

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The fluorine incorporation into HfO2 with oxygen vacancies has been investigated using first principles calculations. The authors show that atomic fluorine can efficiently passivate the neutral oxygen vacancy with excess energies of 4.98 and 4.39 eV for threefold- and fourfold-coordinated oxygen vacancy sites, respectively. The introduction of fluorine elevates the vacancy induced state into conduction band by transferring the neutral vacancy state to positively charged state, and thus removes the gap state which causes trap-assisted tunneling. The HfO2 band gap is not narrowed after fluorine incorporation.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.65.Rv Passivation
61.72.J- Point defects and defect clusters
71.20.Ps Other inorganic compounds
71.15.-m Methods of electronic structure calculations

Paraelectric ceramics/metal dual composites SrTiO3/Pt system with giant relative permittivity

Won Woo Cho, Isao Kagomiya, Ken-Ichi Kakimoto, and Hitoshi Ohsato

Appl. Phys. Lett. 89, 152905 (2006); http://dx.doi.org/10.1063/1.2361176 (3 pages) | Cited 8 times

Online Publication Date: 12 October 2006

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Dielectric properties of SrTiO3–Pt (platinum) composites prepared using conventional ceramic method were investigated. Dense complex ceramics were obtained without chemical reaction between SrTiO3 and Pt during sintering processes. The relative permittivity (εr) of SrTiO3 was increased by the addition of Pt particles nearly up to the percolation threshold of 27.8 vol % as predicted using normalized percolation theory. The maximum εr of 2150 at 1 MHz was obtained for the composite including 27 vol % Pt due to the increased electric field around Pt particles. Using finite difference time domain method, the increase of electric field in the direction of applied electric field was confirmed visually in the vicinity of the embedded metal particles.
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77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Memory effect of a mechanical anomaly related to ferroelastic domain switching in rhombohedral lead zirconate titanate ceramics

Can Wang, Simon A. T. Redfern, Maren Daraktchiev, and Richard J. Harrison

Appl. Phys. Lett. 89, 152906 (2006); http://dx.doi.org/10.1063/1.2361261 (3 pages) | Cited 13 times

Online Publication Date: 12 October 2006

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An anomaly in the temperature dependent mechanical properties of a lead zirconate titanate ferroelectric ceramic has been observed by dynamic mechanical analysis. The anomaly, seen as a rise in modulus, accompanied by a decrease in internal friction, occurs in the low-temperature phase below TC. The temperature of the anomalies varies systematically with the applied forces and the anomaly does exhibit a memory effect. The corresponding static bending deformation, mainly from remnant strain by ferroelastic domain switching, is analyzed, and a critical remnant strain value for triggering the anomaly is obtained. The anomaly is thought to be induced by pinning and depinning of domain walls. The results confirm that the memory effect and the occurrence of the anomaly are controlled by ferroelastic domain switching.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep

Tunability and permittivity-temperature characteristics of highly (100) oriented compositionally graded (Ba0.7Sr0.3)(SnxTi1−x)O3 thin films grown by pulse-laser deposition

S. G. Lu and Z. K. Xu

Appl. Phys. Lett. 89, 152907 (2006); http://dx.doi.org/10.1063/1.2361262 (3 pages) | Cited 6 times

Online Publication Date: 12 October 2006

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Compositionally graded (Ba0.7Sr0.3)(SnxTi1−x)O3 (BSSnT) (x = 0.1, 0.2, 0.3, and 0.4) thin films were prepared by pulse-laser deposition on (La0.7Sr0.3)CoO3/LaAlO3 substrates. A highly (100) oriented structure was obtained for both the upgraded (x increased from the bottom layer) and downgraded (x decreased from the bottom layer) configurations. The tunabilities are 31% and 35% for up- and downgraded BSSnT thin films at 300 kV/cm, respectively. Both the up- and downgraded BSSnT thin films exhibit near linear permittivity-temperature characteristics in the temperature range of −150 to 150 °C. Fine grain size and graded configuration are believed to be responsible for this dielectric behavior.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth

Piezoelectric transformer based ultrahigh sensitivity magnetic field sensor

Rashed A. Islam, Hyeoungwoo Kim, Shashank Priya, and Harry Stephanou

Appl. Phys. Lett. 89, 152908 (2006); http://dx.doi.org/10.1063/1.2357941 (3 pages) | Cited 10 times

Online Publication Date: 12 October 2006

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Magnetoelectric particulate composites with varying ferrite content (3–20 mol %) were synthesized in the system Pb(Zr0.52Ti0.48)O3 (PZT)–Ni0.8Zn0.2Fe2O4 (NZF) and it was found that 0.8PZT-0.2NZF composite material exhibited high response of the order of 450 mV/cm Oe at the low frequency of 1 kHz with 600 Oe dc bias. This is one of the highest magnitudes reported for the sintered particulate composite materials. This material was used to fabricate a magnetic field sensor which utilizes the piezoelectric transformer structure with ring/dot electrode pattern. The size of the magnetic field sensor was ϕ20×1.5 mm2. The sensor was characterized for the changes in the output voltage and resonance frequency shift under constant current condition. A dramatic change in the magnitude of the output voltage and frequency shift was observed on application of the magnetic field. The sensor design presented in this letter clearly shows the possibility of fabricating an extremely cost-effective magnetometer.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.75.Ss Magnetic field sensors using spin polarized transport

Computational investigation of B-site donor doping effect on fatigue behavior of lead zirconate titanate

Zhen Zhang, Li Lu, Chang Shu, and Ping Wu

Appl. Phys. Lett. 89, 152909 (2006); http://dx.doi.org/10.1063/1.2362993 (3 pages) | Cited 14 times

Online Publication Date: 13 October 2006

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The effect of the B-site donor on the fatigue behavior of lead zirconate titanate (PZT) was studied. Seven elements were considered. The formation energies of oxygen vacancies and band structures of these doped systems were investigated. It was found that the Nb, Ta, and W doped PZT systems have the highest formation energy of oxygen vacancies as well as reduced occupations of Ti 3d states by the electrons released from oxygen vacancies. Therefore, the systems respectively doped with Nb, Ta, and W can effectively improve the fatigue property of PZT.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
62.20.M- Structural failure of materials
61.72.J- Point defects and defect clusters
71.20.Ps Other inorganic compounds

Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment

Hong-Liang Lu, Liang Sun, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang Wang

Appl. Phys. Lett. 89, 152910 (2006); http://dx.doi.org/10.1063/1.2363145 (3 pages) | Cited 37 times

Online Publication Date: 13 October 2006

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Al2O3 thin films were deposited by atomic layer deposition on HF-cleaned and NH3 plasma-treated GaAs surfaces, respectively. The precursors used for Al2O3 films are trimethylaluminum and water. Effects of NH3 plasma pretreatment on the electrical and structural properties of Al2O3/GaAs interface were investigated by C-V measurements, high-resolution transmission electron microscopy, and x-ray photoelectron spectroscopy measurements. The C-V measurements showed that the electrical property is improved after NH3 plasma pretreatment. X-ray photo electron spectroscopy analyses confirmed that GaAs oxides and elemental As are greatly decreased and the GaAs surface can be efficiently protected during NH3 plasma pretreatment and atomic layer deposition of Al2O3.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
52.77.Dq Plasma-based ion implantation and deposition

Magnetoelectric properties of the lead–free cofired BaTiO3–(Ni0.8Zn0.2)Fe2O4 bilayer composite

Rashed A. Islam and Shashank Priya

Appl. Phys. Lett. 89, 152911 (2006); http://dx.doi.org/10.1063/1.2361180 (3 pages) | Cited 12 times

Online Publication Date: 13 October 2006

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In this letter the authors report the ferroelectric and magnetoelectric (ME) properties of the cofired bilayer composite targeting low cost lead-free magnetic field sensor. The ME response was characterized as a function of the magnetic field direction and as a function of the dc bias. It was found that when the ac magnetic field is applied at 90° to the ferroelectric polarization axis of the sample, a ME response of 72 mV/cm Oe was obtained without any dc bias. The magnitude of the ME coefficient reached the saturation at dc bias of 1000 Oe having magnitude of 152 mV/cm Oe. The scanning electron microscopy analysis showed the presence of clear interface boundary between the strained BaTiO3/(Ni0.8Zn0.2)Fe2O4 region.
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77.84.Lf Composite materials
75.80.+q Magnetomechanical effects, magnetostriction
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
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