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9 Oct 2006

Volume 89, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 89, 151920 (2006); http://dx.doi.org/10.1063/1.2360906 (3 pages)

Aycan Yurtsever, Matthew Weyland, and David A. Muller
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Ultraviolet free-exciton light emission in Er-passivated SnO2 nanocrystals in silica

S. Brovelli, N. Chiodini, F. Meinardi, A. Lauria, and A. Paleari

Appl. Phys. Lett. 89, 153126 (2006); http://dx.doi.org/10.1063/1.2362583 (3 pages) | Cited 16 times

Online Publication Date: 13 October 2006

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SnO2 nanocrystals are grown in silica starting from a sol-gel method and using Er doping to passivate the cluster boundaries. As a result, emission at 3.8 eV from the decay of SnO2 free excitons is observed in nanostructured SnO2:SiO2, besides the extrinsic 2 eV luminescence of defects in SnO2 and ascribable to substoichiometric nanocluster boundaries. The analysis of the extrinsic emission competitive with the ultraviolet (UV) luminescence evidences the involvement of a phonon mode at 210 cm−1 from a SnO-like phase. The feasibility of passivated wide-band-gap nanocrystals in silica gives interesting perspectives for UV-emitting optical devices.
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71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
61.72.up Other materials
78.55.Hx Other solid inorganic materials
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
81.65.Rv Passivation

Electronic control and readout of qubits based on single impurity states in semiconductors

A. G. Petukhov, V. V. Osipov, and V. N. Smelyanskiy

Appl. Phys. Lett. 89, 153127 (2006); http://dx.doi.org/10.1063/1.2362584 (3 pages) | Cited 2 times

Online Publication Date: 13 October 2006

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The authors demonstrate that a semiconductor n+/i/n+ junction is the most suitable candidate for electronic control and readout of semiconductor qubits based on shallow impurities. Tuning of the doping levels in n+ regions and self-induced interface barriers ensure that an impurity atom placed in i region is populated with one electron in equilibrium. They analyze Li donors in Si and show that a large signal qubit readout can be realized via polarization selective photoexcitation of resonant cotunneling current through an excited impurity state.
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03.67.Lx Quantum computation architectures and implementations
71.55.Cn Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Quantum asymmetry of switching in laterally coupled quantum wires with tunable coupling strength

A. Ramamoorthy, J. P. Bird, and J. L. Reno

Appl. Phys. Lett. 89, 153128 (2006); http://dx.doi.org/10.1063/1.2362592 (3 pages) | Cited 4 times

Online Publication Date: 13 October 2006

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The authors study switching in laterally coupled quantum wires under conditions where their sidewall confinement strongly influences the transmission properties of their coupling region. Their analysis suggests that the low-temperature behavior of the currents in this regime results from the influence of inevitable structural asymmetry on the quantum-level structure of the quantum wires.
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73.63.Nm Quantum wires
03.67.Lx Quantum computation architectures and implementations

Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

R. Dujardin, V. Poydenot, T. Devillers, V. Favre-Nicolin, P. Gentile, and A. Barski

Appl. Phys. Lett. 89, 153129 (2006); http://dx.doi.org/10.1063/1.2360225 (3 pages) | Cited 5 times

Online Publication Date: 13 October 2006

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Silicon nanowhiskers have been grown by molecular beam epitaxy on Si (111) by vapor-liquid-solid mechanism induced by gold droplets. Very thin Ge containing layers have been incorporated in Si nanowhiskers in order to grow SiGe heterostructures. Si and Ge growth rate in nanowhiskers, shape, and sidewall facets of nanowhiskers have been investigated by scanning electron microscopy and grazing incidence small angle x-ray scattering. Anomalous grazing incidence x-ray diffraction and transmission electron microscopy observations show a strong intermixing of Si with Ge in nanowhiskers and formation of SiGe heterostructures which are highly strained to Si.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.10.Bk Growth from vapor
61.46.-w Structure of nanoscale materials
78.70.Ck X-ray scattering

Single-walled carbon nanotube growth from ion implanted Fe catalyst

Yongho Choi, Jennifer Sippel-Oakley, and Ant Ural

Appl. Phys. Lett. 89, 153130 (2006); http://dx.doi.org/10.1063/1.2360889 (3 pages) | Cited 8 times

Online Publication Date: 13 October 2006

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The authors present experimental evidence that single-walled carbon nanotubes can be grown by chemical vapor deposition from ion implanted iron catalyst. They systematically characterize the effect of ion implantation dose and energy on the catalyst nanoparticles and nanotubes formed at 900 °C. They also fabricate a micromachined silicon grid for direct transmission electron microscopy characterization of the as-grown nanotubes. This work opens up the possibility of controlling the origin of single-walled nanotubes at the nanometer scale and of integrating them into nonplanar three-dimensional device structures with precise dose control.
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81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.80.Jh Ion radiation effects
61.72.up Other materials
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.37.Lp Transmission electron microscopy (TEM)

Photochemical switching behavior of azofunctionalized polymer liquid crystal/SiO2 composite photonic crystal

M. Moritsugu, S. N. Kim, T. Ogata, T. Nonaka, S. Kurihara, S. Kubo, H. Segawa, and O. Sato

Appl. Phys. Lett. 89, 153131 (2006); http://dx.doi.org/10.1063/1.2363928 (3 pages) | Cited 14 times

Online Publication Date: 13 October 2006

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A photochemically tunable photonic crystal was prepared by infiltrating azopolymer liquid crystal in a SiO2 inverse opal structure. The SiO2 inverse opal film obtained reflected a light corresponding to the periodicity as well as the refractive indices of the inverse opal structure. Linearly polarized light irradiation shifted the reflection band to longer wavelength more than 15 nm. This is caused by the formation of anisotropic molecular orientation of the azopolymer. The switched state was stable in the dark, and the reversible switching of the reflection band can be achieved by the linearly and circularly polarized light irradiations.
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42.70.Df Liquid crystals
61.30.Vx Polymer liquid crystals
82.50.Nd Control of photochemical reactions
42.70.Qs Photonic bandgap materials
42.65.Pc Optical bistability, multistability, and switching, including local field effects
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Electrical properties of a single microcoiled carbon fiber

Jiaoyan Shen, Zhaojia Chen, Nanlin Wang, Wenjun Li, and Lijuan Chen

Appl. Phys. Lett. 89, 153132 (2006); http://dx.doi.org/10.1063/1.2360932 (3 pages) | Cited 7 times

Online Publication Date: 13 October 2006

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Regular microcoiled carbon fibers with a double helix structure have been synthesized by the catalytic pyrolysis of acetylene at 750–790 °C using Ni powder as a catalyst and thiophene as a promotor. The measurements by a standard four-probe technique of resistance, I-V curves, and magnetoresistance of a single microcoiled fiber are presented. I-V curves and the temperature dependence of the resistance are in accordance with Mott-David [Electronic Processes in Noncrystalline Materials (Oxford University Press, Oxford, 1979), 2nd ed., p. 32 ] variable range hopping above 13 K and Shklovskii-Efros [Electronic Properites of Doped Semiconductors (Springer, Berlin, 1984), p. 202]; Pollak-Shklovshii [Hopping Transport in Solids, (North-Holland, Amsterdam, 1991), 273 ] variable range hopping below 13 K. In addition, a positive magnetoresistance with H2-dependence behavior is observed at low temperature.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Ee Mobility edges; hopping transport
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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