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Applied Physics Letters / Volume 89 / Issue 16 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 89, 163124 (2006); http://dx.doi.org/10.1063/1.2363958 (3 pages)

Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns

Y. Kawakami1, S. Suzuki1, A. Kaneta1, M. Funato1, A. Kikuchi2, and K. Kishino2

1Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
2Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan

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(Received 19 July 2006; accepted 31 August 2006; published online 20 October 2006)

Optical characterization has been performed on an InGaN/GaN nanocolumn structure grown by nitrogen plasma assisted molecular beam epitaxy not only in macroscopic configuration but also in a microscopic one that can be assessed to a single nanocolumn. The photoluminescence (PL) decay monitored at 500 nm is fitted with a double exponential curve, which has lifetimes of 0.67 and 4.33 ns at 13 K. These values are two orders of magnitude smaller than those taken at the same wavelength in conventional InGaN/GaN quantum wells (QWs) grown toward the C orientation. PL detection of each single nanocolumn was achieved using a mechanical lift-off technique. The results indicate that the very broad, macroscopically observed PL spectrum is due to the sum of the sharp PL spectrum from each nanocolumn, the peak energy of which fluctuates. Moreover, unlike conventional QWs, the blueshift of a single nanocolumn is negligibly small under higher photoexcitation. These findings suggest that carrier localization as well as the piezoelectric polarization field is suppressed in InGaN/GaN nanocolumns.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, photoluminescence, spectral line shift, photoexcitation, localised states, dielectric polarisation, radiative lifetimes, nanostructured materials

PACS

  • 78.67.Bf

    Nanocrystals, nanoparticles, and nanoclusters

  • 78.55.Cr

    III-V semiconductors

  • 77.22.Ej

    Polarization and depolarization

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2363958

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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