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16 Oct 2006

Volume 89, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 89, 164101 (2006); http://dx.doi.org/10.1063/1.2362602 (3 pages)

Yen-Wen Lu and Chang-Jin(CJ) Kim
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Scaling behavior of dynamic hysteresis in soft lead zirconate titanate bulk ceramics

Rattikorn Yimnirun, Yongyut Laosiritaworn, Supattra Wongsaenmai, and Supon Ananta

Appl. Phys. Lett. 89, 162901 (2006); http://dx.doi.org/10.1063/1.2363143 (3 pages) | Cited 37 times

Online Publication Date: 16 October 2006

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The scaling behavior of the dynamic hysteresis of ferroelectric bulk system was investigated. The scaling relation of hysteresis area 〈A〉 against frequency f and field amplitude E0 for the saturated loops of the soft lead zirconate titanate bulk ceramic takes the form of 〈A〉∝f−1/4E0, which differs significantly from that of the theoretical prediction and that of the thin film. This indicates that the scaling relation is dimension dependent and that depolarizing effects in the interior must be taken into account to model bulk materials. Additionally, the scaling relation for the minor loops takes the form of 〈A〉∝f−1/3E03, which is identical to that of the thin film as both cases contain similar 180° domain-reversal mechanism.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization

Phase transition and high dielectric constant of bulk dense nanograin barium titanate ceramics

Xiaohui Wang, Xiangyun Deng, Hai Wen, and Longtu Li

Appl. Phys. Lett. 89, 162902 (2006); http://dx.doi.org/10.1063/1.2363930 (3 pages) | Cited 26 times

Online Publication Date: 16 October 2006

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Barium titanate (BTO) ceramics with an average grain size of 8 nm were fabricated and studied. The temperature dependent Raman spectra revealed successive transitions from rhombohedral to orthorhombic, tetragonal, and cubic as the temperature increased from 87 to 673 K. Local piezoresponse force measurements indicated that the ceramics had switchable polarization at room temperature. Dielectric measurements showed a broad ferroelectric-to-paraelectric phase transition with a maximum permittivity of 1800 at 390 K. All these results suggest that ferroelectricity could remain in BTO ceramics with grain size as small as 8 nm in diameter.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
61.46.-w Structure of nanoscale materials
78.30.Hv Other nonmetallic inorganics

Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling

Chandan B. Samantaray and Zhi Chen

Appl. Phys. Lett. 89, 162903 (2006); http://dx.doi.org/10.1063/1.2363139 (3 pages) | Cited 4 times

Online Publication Date: 17 October 2006

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The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4×10−2 A cm−2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
63.20.K- Phonon interactions

Antiferroelectricity in multiferroic BiCrO3 epitaxial films

Dae Ho Kim, Ho Nyung Lee, Maria Varela, and Hans M. Christen

Appl. Phys. Lett. 89, 162904 (2006); http://dx.doi.org/10.1063/1.2362585 (3 pages) | Cited 26 times

Online Publication Date: 18 October 2006

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Multiferroic BiCrO3 epitaxial films were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. The authors found that the films exhibit antiferroelectricity with a characteristic electric field induced ferroelectric phase, as evidenced by double hysteretic behaviors in the electric field dependence of dielectric constants and polarization. The antiferroelectricity is consistent with theoretical predictions that the Bi lone pair induces polarization in bismuth-based perovskites, such as ferroelectric BiMnO3 and BiFeO3. Magnetic measurements revealed weak parasitic ferromagnetism resulting from antiferromagnetic ordering below 140 K. This magnetic transition coincides with a local maximum in the dielectric constants’ temperature dependence.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
75.80.+q Magnetomechanical effects, magnetostriction
75.70.Ak Magnetic properties of monolayers and thin films
77.55.-g Dielectric thin films
75.50.Ee Antiferromagnetics

Quantum chemical study of the initial surface reactions of HfO2 atomic layer deposition on the hydroxylated GaAs(001)-4×2 surface

Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang, and Li-Kang Wang

Appl. Phys. Lett. 89, 162905 (2006); http://dx.doi.org/10.1063/1.2370425 (3 pages) | Cited 8 times

Online Publication Date: 18 October 2006

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Initial surface reaction mechanism for atomic layer deposition of HfO2 on the hydroxylated GaAs(001)-4×2 surface using HfCl4 and H2O as precursors is investigated using hybrid density functional theory. The reaction between HfCl4 and H2O with the hydroxylated GaAs(001)-4×2 surface consists of two half-reactions: (1) HfCl4 with GaAs–OH sites and (2) H2O with Hf–Cl sites. The two half-reactions proceed through the formation of stable chemisorbed states, resulting in high activation barriers of 17.1 and 17.6 kcal/mol for HCl formation, respectively. Additional energies are also needed to desorb the respective physisorbed states HCl from the substrate surfaces.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Mn-doped 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 pyroelectric crystals for uncooled infrared focal plane arrays applications

Yanxue Tang, Laihui Luo, Yanmin Jia, Haosu Luo, Xiangyong Zhao, Haiqing Xu, Di Lin, Jinglan Sun, Xiangjian Meng, Junhao Zhu, and Mohammed Es-Souni

Appl. Phys. Lett. 89, 162906 (2006); http://dx.doi.org/10.1063/1.2363149 (3 pages) | Cited 12 times

Online Publication Date: 19 October 2006

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3 mol %Mn-doped 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystals were grown by a modified Bridgman technique. The pyroelectric properties and thermal stability of the crystals were investigated. Mn substitution resulted in an enhanced pyroelectric coefficient and a lower dielectric loss, which led to the improvement of the detectivity figure of merit of doped crystals by about a factor of 4 at 50 Hz compared with that of pure crystals. Moreover, the thermal stability was enhanced by Mn substitution. The mechanism of doping effect is explained by the fact that the domain walls are pinned by the dopant dipolar defects, which optimizes the pyroelectric performance of 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 for uncooled infrared focal plane arrays applications.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.70.+a Pyroelectric and electrocaloric effects
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
61.72.up Other materials

Correlation between grain size and domain size distributions in ferroelectric media for probe storage applications

Yunseok Kim, Youngsang Cho, Seungbum Hong, Simon Bühlmann, Hongsik Park, Dong-Ki Min, Seung-Hyun Kim, and Kwangsoo No

Appl. Phys. Lett. 89, 162907 (2006); http://dx.doi.org/10.1063/1.2363942 (3 pages) | Cited 8 times

Online Publication Date: 19 October 2006

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The relationship between grain size and domain size distributions has been studied by piezoelectric force microscopy in ferroelectric films with average grain size of 150 nm. As the ratio of domain size to grain size increases, the domain size deviation decreases in a 1/xn-type function, where n is 1.105. Extrapolation of the model shows that in order to obtain 10% domain size deviation in 1 Tbit/in.2 media, a grain size smaller than 14 nm is required. The obtained results imply that either nanograin or single crystalline/epitaxial films provide reliable domain distributions for probe storage applications.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
77.65.-j Piezoelectricity and electromechanical effects
84.30.Sk Pulse and digital circuits

Surface core-level shifts of strontium observed in photoemission of barium strontium titanate thin films

J. D. Baniecki, M. Ishii, T. Shioga, K. Kurihara, and S. Miyahara

Appl. Phys. Lett. 89, 162908 (2006); http://dx.doi.org/10.1063/1.2357880 (3 pages) | Cited 13 times

Online Publication Date: 19 October 2006

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Angle resolved x-ray photoelectron spectroscopy was used to investigate the surface electronic structure of barium strontium titanate (BST) films. In contrast to previous photoemission studies which identified two chemical states associated with only Ba in the near surface region, the authors have resolved core-level features from surface Sr atoms which provide new insight into the surface electronic structure of BST thin films. The surface Sr 3d features are found to lie approximately 1 eV higher in binding energy than the bulk derived peaks. The effects of aqueous and annealing surface treatments and the origin of the Sr surface core-level shifts are discussed.
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73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
FREE

Ultraviolet driven negative current and rectifier effect in self-assembled green fluorescent protein device

Z. G. Chiragwandi, K. Gillespie, Q. X. Zhao, M. Willander, and I. Panas

Appl. Phys. Lett. 89, 162909 (2006); http://dx.doi.org/10.1063/1.2357893 (3 pages)

Online Publication Date: 19 October 2006

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UV induced negative current produced at low voltages is reported in a photocurrent rectifier device consisting of a sensing region between two nano Al/Al2O3 electrodes placed 30 nm apart, employing a droplet of enhanced green fluorescent protein as molecular electrolyte. The current-voltage characteristics are discussed in terms of the properties of the thin Al2O3 scale, the position of the Fermi level, the position of the highest occupied molecular orbital-lowest unoccupied molecular orbital gap, and dispersion of states induced by varying dielectric constants.
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85.65.+h Molecular electronic devices
87.80.-y Biophysical techniques (research methods)

Experimental technique for characterizing arbitrary aspect ratio piezoelectric resonators

Moojoon Kim, Jungsoon Kim, and Wenwu Cao

Appl. Phys. Lett. 89, 162910 (2006); http://dx.doi.org/10.1063/1.2364465 (3 pages) | Cited 1 time

Online Publication Date: 20 October 2006

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The electromechanical coupling coefficient k is the most important parameter for the characterization of a piezoelectric material and for the design of electromechanical devices. Standard resonance technique for measuring the k value is based on one-dimensional approximation, which needs to use samples having extreme geometries. For small size crystals and/or due to geometrical constraints in many devices, piezoelectric resonators may not be made into such extreme geometries. An averaging scheme has been developed to tackle this challenging experimental task, and the so obtained k values agree well with theoretical predictions of k values for arbitrary aspect ratio resonators.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement

Wei-Hao Wu, Bing-Yue Tsui, Mao-Chieh Chen, Yong-Tian Hou, Yin Jin, Hun-Jan Tao, Shih-Chang Chen, and Mong-Song Liang

Appl. Phys. Lett. 89, 162911 (2006); http://dx.doi.org/10.1063/1.2364064 (3 pages) | Cited 5 times

Online Publication Date: 20 October 2006

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Threshold voltage instability measured by the pulse current-voltage technique has been recognized as the transient charging and discharging of the preexisting bulk traps in Hf-based high-k gate dielectrics, and these high-k traps or called border traps can instantly exchange charge carriers with the underlying Si substrate by tunneling through the thin interfacial oxide. Based on an elastic tunneling model through trapezoidal potential barriers, the spatial and energetic distribution of border traps in the HfO2/SiO2 high-k gate stack can be profiled as a smoothed, three-dimensional mesh by measuring the low-frequency capacitance-voltage characteristics of high-k metal-oxide-semiconductor capacitors with n-type Si substrate.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

Kyung Min Kim, Byung Joon Choi, Doo Seok Jeong, Cheol Seong Hwang, and Seungwu Han

Appl. Phys. Lett. 89, 162912 (2006); http://dx.doi.org/10.1063/1.2361268 (3 pages) | Cited 29 times

Online Publication Date: 20 October 2006

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The influence of electron injection on the electric-pulse-induced resistive switching of Pt/TiO2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (>100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.
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73.61.Le Other inorganic semiconductors
73.40.Ns Metal-nonmetal contacts
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects
61.72.Cc Kinetics of defect formation and annealing
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