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30 Oct 2006

Volume 89, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 89, 181101 (2006); http://dx.doi.org/10.1063/1.2372737 (3 pages)

Z. D. Gao, S. N. Zhu, Shih-Yu Tu, and A. H. Kung
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Monolithic red-green-blue laser light source based on cascaded wavelength conversion in periodically poled stoichiometric lithium tantalate

Z. D. Gao, S. N. Zhu, Shih-Yu Tu, and A. H. Kung

Appl. Phys. Lett. 89, 181101 (2006); http://dx.doi.org/10.1063/1.2372737 (3 pages) | Cited 22 times

Online Publication Date: 30 October 2006

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A compact, pulsed, red, green, and blue laser source based on cascaded quasi-phase-matched wavelength conversion in two periodic superlattices set in tandem in a single stoichiometric LiTaO3 crystal and pumped by a laser source at 532 nm is reported. The white light equivalent flux obtained was 80 lm per 1 W input with a green to white light power conversion efficiency of >30%. Unity power conversion is feasible in this monolithic approach.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Fluorescence tomography in turbid media based on acousto-optic modulation imaging

Masaki Kobayashi, Takashi Mizumoto, Yukihiro Shibuya, Masaru Enomoto, and Motohiro Takeda

Appl. Phys. Lett. 89, 181102 (2006); http://dx.doi.org/10.1063/1.2364600 (3 pages) | Cited 13 times

Online Publication Date: 30 October 2006

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The authors present a tomographic imaging technique of fluorescence in light-scattering media. Ultrasonic modulation of fluorescence based on the interaction between ultrasound and light is applied for imaging of a fluorescent material by scanning a focused sound field in which the light is modulated selectively. The on-axis sound-field characteristics that affect the light by modulating its amplitude (through variation of the refractive index and the scattering coefficient) were determined. That imaging technique is demonstrated using tissue phantoms that contain localized fluorescent regions in a dense scattering medium, suggesting the applicability of this technique for visualization of fluorescent probes in biological tissues.
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87.63.L- Visual imaging
87.63.D- Ultrasonography
43.80.Qf

Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film

Hong Seong Kang, Gun Hee Kim, Dong Lim Kim, Hyun Woo Chang, Byung Du Ahn, and Sang Yeol Lee

Appl. Phys. Lett. 89, 181103 (2006); http://dx.doi.org/10.1063/1.2364865 (3 pages) | Cited 54 times

Online Publication Date: 30 October 2006

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The photoluminescence spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton of 3.3437 eV and a transition between free electrons and acceptor levels of 3.2924 eV. Calculated acceptor binding energy is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by the analysis of x-ray photoelectron spectroscopy. p-type formation mechanism of As doped ZnO thin film is related to the AsZn–2VZn complex model. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
71.55.Gs II-VI semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Generation of multicycle terahertz pulses via optical rectification in periodically inverted GaAs structures

Yun-Shik Lee, W. C. Hurlbut, K. L. Vodopyanov, M. M. Fejer, and V. G. Kozlov

Appl. Phys. Lett. 89, 181104 (2006); http://dx.doi.org/10.1063/1.2367661 (3 pages) | Cited 6 times

Online Publication Date: 30 October 2006

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The authors demonstrate the generation of multicycle narrow-bandwidth terahertz pulses in periodically inverted GaAs structures using optical rectification of 2 μm, 100 fs pump pulses. Three different types of orientation-inverted samples are employed: optically contacted multilayer, orientation-patterned, and diffusion-bonded GaAs. The terahertz pulses are characterized by two-color (pump at 2 μm and probe at 0.8 μm) terahertz time-domain spectroscopy and terahertz Michelson interferometry.
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78.66.Fd III-V semiconductors
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Wc Optical coatings
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
07.60.Ly Interferometers

Laser dynamics in organic distributed feedback lasers

M. Zavelani-Rossi, S. Perissinotto, G. Lanzani, M. Salerno, and G. Gigli

Appl. Phys. Lett. 89, 181105 (2006); http://dx.doi.org/10.1063/1.2372597 (3 pages) | Cited 12 times

Online Publication Date: 30 October 2006

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The authors study laser dynamics in a polymer distributed feedback resonator by performing pump-probe experiments. They measured the population kinetics in the device under lasing operation with subpicosecond time resolution. By modeling the system with a set of coupled rate equations, which account for stimulated emission and nonradiative decays, they extract quantitative information on buildup time, photon lifetime, and pulse duration and give evidence of the feedback and loss mechanisms. They also investigate the influence of the grating length in the feedback and loss processes, and they show that lower pump energy thresholds can be achieved with short devices.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

End-pumped green and blue vertical external cavity surface emitting laser devices

Gi Bum Kim, Jun-Youn Kim, Junho Lee, Jaeryung Yoo, Ki-Sung Kim, Sang-Moon Lee, Soohaeng Cho, Seong-Jin Lim, Taek Kim, and Yongjo Park

Appl. Phys. Lett. 89, 181106 (2006); http://dx.doi.org/10.1063/1.2372689 (3 pages) | Cited 11 times

Online Publication Date: 30 October 2006

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The authors report on the development and demonstration of the high power operation of optically end-pumped vertical external cavity surface emitting laser devices emitting at 532 and 460 nm. 2.7 W green and 1.4 W blue output powers were achieved with a good beam quality by intracavity frequency doubling with second harmonic generation crystal. High efficiency and good beam quality are attributed to the enhanced thermal management by the diamond heat spreader directly bonded to the gain region and effective optical pumping by placing the pump laser diode behind the laser structure.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Quasistationary pulse generation in flash-lamp-pumped Nd3+:Y3Al5O12 laser mode locked through quadratic polarization switching

Jin Yu

Appl. Phys. Lett. 89, 181107 (2006); http://dx.doi.org/10.1063/1.2374677 (3 pages)

Online Publication Date: 31 October 2006

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Extended quasi-steady-state pulse train is developed through the all-solid-state combination of passive negative feedback in a GaAs platelet and positive feedback through cascaded χ(2) polarization switching. With an actively mode-locked flash-lamp-pumped Nd3+:Y3Al5O12 laser, stationary pulse trains lasting for 1 μs with pulses of duration of 11.6 ps and energy of 6.5 μJ are obtained. The total output amounts for 1.73 mJ and the pulse evolution demonstrates that the semiconductor two photon absorption is able to realize a pulse compression from 43.9 to 11.6 ps.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Photonic band tuning in two-dimensional photonic crystal slab waveguides by atomic layer deposition

E. Graugnard, D. P. Gaillot, S. N. Dunham, C. W. Neff, T. Yamashita, and C. J. Summers

Appl. Phys. Lett. 89, 181108 (2006); http://dx.doi.org/10.1063/1.2360236 (3 pages) | Cited 21 times

Online Publication Date: 31 October 2006

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The photonic bands of two-dimensional (2D) triangular lattice photonic crystal Si slab waveguides were statically tuned using low temperature atomic layer deposition (ALD) of TiO2. Angular dependent reflectance measurements of bare and coated devices were well fitted by three-dimensional finite-difference time-domain calculations. The technique not only allows the physics of photonic band effects in 2D photonic crystals to be systematically studied but also demonstrates large static tuning and precise fine-scale control over band frequency and dispersion, with a frequency tuning range of 12% and precision of 0.005% per ALD cycle. Band tuning to achieve zero group velocity is demonstrated.
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42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Behavior of debris from laser-produced plasma for extreme ultraviolet light source measured by laser imaging technique

Hiroki Tanaka, Yuki Hashimoto, Kouji Tamaru, Akihiko Takahashi, and Tatsuo Okada

Appl. Phys. Lett. 89, 181109 (2006); http://dx.doi.org/10.1063/1.2362591 (3 pages) | Cited 12 times

Online Publication Date: 1 November 2006

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The behavior of debris generated from a laser-produced plasma (LPP) for the extreme ultraviolet light source at 13.5 nm has been studied using a laser induced fluorescence (LIF) imaging system. Tin (Sn) LPPs were produced by irradiating a flat Sn plate and Sn thin films perpendicularly with a Nd:YAG laser beam. When a thin Sn film was used as a target material, the depletion of the Sn atoms was clearly observed along the Nd:YAG laser beam. The LIF system was also used for visualizing the sputtering process of a mirror substrate by the fast ions generated from the plasma.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.72.Bj Visible and ultraviolet sources
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.15.Cd Deposition by sputtering

Selection and amplification of modes of an optical frequency comb using a femtosecond laser injection-locking technique

H. S. Moon, E. B. Kim, S. E. Park, and C. Y. Park

Appl. Phys. Lett. 89, 181110 (2006); http://dx.doi.org/10.1063/1.2374680 (3 pages) | Cited 11 times

Online Publication Date: 1 November 2006

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The authors have demonstrated the selection and the amplification of the components of an optical frequency comb using a femtosecond laser injectionlocking technique. The author used a mode-locked femtosecond Ti:sapphire laser as the master laser and a single-mode diode laser as the slave laser. The femtosecond laser injection-locking technique was applied to a filter for mode selection of the optical frequency comb and an amplifier for amplification of the selected mode. The authors could obtain the laser source selected only the desired mode of the optical frequency comb and amplified the power of the selected modes several thousand times.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
06.20.fb Standards and calibration
06.30.Ft Time and frequency

Second-order optical nonlinearity in thermally poled borosilicate glass

Honglin An and Simon Fleming

Appl. Phys. Lett. 89, 181111 (2006); http://dx.doi.org/10.1063/1.2374690 (3 pages) | Cited 4 times

Online Publication Date: 1 November 2006

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Borosilicate glass was thermally poled to induce second-order optical nonlinearity. The obtained second-order nonlinearity was proportional to the applied voltages with a d33 = 0.22 pm/V achieved at 1.8 kV. The nonlinearity was in a narrow layer ∼ 0.8 μm beneath the anode surface. It was found that K+ ions were depleted from the nearest region under the anode and then accumulated in a region ∼ 7.6 μm beneath the anode. The more mobile Na+ ions could cross the glass surface and were reduced at the cathode, resulting in the formation of sodium related crystals on the cathode surface. Intense stress was developed in the poled region due to compositional changes to the poled glass.
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42.70.Ce Glasses, quartz
42.65.-k Nonlinear optics
61.43.Fs Glasses
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Thermal properties and degradation behavior of red-emitting high-power diode lasers

Tran Quoc Tien, Fritz Weik, Jens W. Tomm, Bernd Sumpf, Martin Zorn, Ute Zeimer, and Götz Erbert

Appl. Phys. Lett. 89, 181112 (2006); http://dx.doi.org/10.1063/1.2374693 (3 pages) | Cited 10 times

Online Publication Date: 1 November 2006

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The thermal properties and the degradation behavior of high-power broad-area diode lasers emitting at 650 nm are analyzed. Imaging thermography is applied to assess the bulk temperature while the facet temperature is measured by micro-Raman spectroscopy. Although no visible facet alteration is observed, power degradation is found to be accompanied by increased temperatures at the facets. The immediate vicinity of them also turns out to be the starting point for the creation of defect networks within the quantum well seen in cathodoluminescence images. The observed behavior is compared to that known for near-infrared emitting devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 μm

N. I. Cade, H. Gotoh, H. Kamada, H. Nakano, S. Anantathanasarn, and R. Nötzel

Appl. Phys. Lett. 89, 181113 (2006); http://dx.doi.org/10.1063/1.2378403 (3 pages) | Cited 14 times

Online Publication Date: 1 November 2006

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The authors have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with a characteristic exciton-biexciton behavior and a biexciton antibinding energy of more than 2 meV relative to the exciton. Temperature-dependent measurements reveal negligible optical phonon induced broadening of the exciton line below 50 K, and emission from the exciton state clearly persists above 70 K. These results are encouraging for the development of a controllable photon source for fiber-based quantum information and cryptography systems.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
73.21.La Quantum dots

Coulomb corrections to the slowdown factor in quantum-dot quantum coherence

S. Michael, W. W. Chow, and H. C. Schneider

Appl. Phys. Lett. 89, 181114 (2006); http://dx.doi.org/10.1063/1.2364164 (3 pages) | Cited 6 times

Online Publication Date: 1 November 2006

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Quantum-coherence induced group-velocity slowdown in a semiconductor quantum-dot structure is investigated using a many-body theory. The predictions are found to be noticeably different from those obtained in the independent-particle treatment typically used for describing atomic quantum coherence. In particular, Hartree-Fock renormalizations can lead to over two orders of magnitude reduction in the predicted pump intensity requirement for group-velocity slowdown to occur. Results are presented for the slowdown factor and slowdown-bandwidth product in a pulsed InAs–GaAs quantum-dot Λ scheme.
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78.67.Hc Quantum dots
42.50.Ar Photon statistics and coherence theory

Optical gain of InGaAsN/InP quantum wells for laser applications

H. Carrère, X. Marie, L. Lombez, and T. Amand

Appl. Phys. Lett. 89, 181115 (2006); http://dx.doi.org/10.1063/1.2372769 (3 pages) | Cited 10 times

Online Publication Date: 2 November 2006

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Dilute nitride structures offer the possibility of growing tensile-strained quantum well lasers on InP substrate emitting in the telecommunication L band. The authors have calculated the characteristics of InGaAs(N)/InAsP/InP quantum well structures and compared to the ones of N-free quantum well structures. It appears that the introduction of a fraction of nitrogen as small as 0.3% is enough to pass over the emission wavelength of 1.57 μm and induces an increase of the material gain by a factor 3.
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78.66.Fd III-V semiconductors
78.67.De Quantum wells
42.70.Hj Laser materials
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Performance of an electro-optic waveguide modulator fabricated using a deoxyribonucleic-acid-based biopolymer

Emily M. Heckman, James G. Grote, F. Kenneth Hopkins, and Perry P. Yaney

Appl. Phys. Lett. 89, 181116 (2006); http://dx.doi.org/10.1063/1.2378400 (3 pages) | Cited 17 times

Online Publication Date: 2 November 2006

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An electro-optic (EO) planar waveguide modulator using a deoxyribonucleic acid (DNA)-based biopolymer for both the waveguide core and cladding layers has been fabricated and its performance evaluated. A cross-linked DNA-surfactant biopolymer was used for the top and bottom cladding layers and the core layer was a cross-linked DNA-surfactant biopolymer with 3 wt % Disperse Red 1. The EO coefficient r33 was induced through contact poling. The fabricated device was found to exhibit EO modulating behavior. Using an estimated value of r33 = 0.5 pm/V, a sine-squared fit to the modulating data was obtained with Vπ = 263 V±10%.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer
87.80.-y Biophysical techniques (research methods)
87.14.G- Nucleic acids
87.15.-v Biomolecules: structure and physical properties
36.20.-r Macromolecules and polymer molecules

Improved characteristics of 660 nm AlGaInP red laser diodes by precise control of the V/III ratio in metal-organic vapor phase epitaxy

Tsuyoshi Ohgoh, Atsushi Mukai, Akihiro Mukaiyama, Hideki Asano, and Toshiro Hayakawa

Appl. Phys. Lett. 89, 181117 (2006); http://dx.doi.org/10.1063/1.2382743 (3 pages)

Online Publication Date: 2 November 2006

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The effects of the group V/III ratio during low-pressure metal-organic vapor phase epitaxy on laser performance have been investigated for GaInP/AlGaInP laser diodes. The quality of GaInP is found to be better at a V/III ratio much lower than an optimal V/III ratio for AlGaInP. GaInP/AlGaInP laser diodes with the emission wavelength of 660 nm were grown at a low V/III ratio for GaInP quantum wells and at a high V/III ratio for AlGaInP waveguide and clad layers. As a result, device characteristics, particularly operating lifetime, are much improved as compared with those of devices grown with a constant high V/III ratio.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Electrical spin injection in forward biased Schottky diodes based on InGaAs–GaAs quantum well heterostructures

N. V. Baidus, M. I. Vasilevskiy, M. J. M. Gomes, M. V. Dorokhin, P. B. Demina, E. A. Uskova, B. N. Zvonkov, V. D. Kulakovskii, A. S. Brichkin, A. V. Chernenko, and S. V. Zaitsev

Appl. Phys. Lett. 89, 181118 (2006); http://dx.doi.org/10.1063/1.2372579 (3 pages) | Cited 4 times

Online Publication Date: 3 November 2006

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The authors demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in a forward biased light emitting Schottky diode (LESD) fabricated on a GaAs based heterostructure with a quantum well (QW). The spin polarization of the injected holes was detected by measuring the circular polarization of the electroluminescence (EL) from the near surface InGaAs/GaAs QW. An intermediate gold layer has been used in order to improve the spin injection efficiency. Over 40% degree of circular polarization of the EL has been observed at T = 2 K for the LESD structure with Au–Ni–Au Schottky contact.
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85.60.Jb Light-emitting devices
85.30.Hi Surface barrier, boundary, and point contact devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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High efficacy plasma display panel with vertically raised bus electrodes

Jung-Woo Ok, Hae June Lee, Dong-Hyun Kim, Chung-Hoo Park, Ho-Jun Lee, Jae-Sung Kim, and Kwang-Yeol Choi

Appl. Phys. Lett. 89, 181501 (2006); http://dx.doi.org/10.1063/1.2374802 (3 pages) | Cited 7 times

Online Publication Date: 1 November 2006

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The authors propose a high efficacy alternating current plasma display panel utilizing vertically raised multilayer bus electrodes. The cell structure was designed to provide an opposite discharge mode and low discharge current in a relatively long gap. The test panels having discharge gaps of 330, 350, and 370 μm were fabricated and basic properties of the panel were investigated in terms of current-voltage characteristics, luminance, and luminous efficiency. The cells with proposed structure show higher luminance and lower current simultaneously. The improvement in luminous efficiency is found to be a factor of 2 compared with the conventional coplanar structure having an electrode gap of 60 μm. Emission spectra and spatio-temporal distribution of infrared light in discharge were measured. It is shown that high luminous efficiency of proposed cell originates from high excitation efficiency, low surface loss of charged particles, and enlarged discharge volume.
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52.75.-d Plasma devices
52.80.-s Electric discharges
52.25.Fi Transport properties
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.70.Ds Electric and magnetic measurements
52.40.Hf Plasma-material interactions; boundary layer effects
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Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping

A. Elfving, M. Zhao, G. V. Hansson, and W.-X. Ni

Appl. Phys. Lett. 89, 181901 (2006); http://dx.doi.org/10.1063/1.2364861 (3 pages) | Cited 4 times

Online Publication Date: 30 October 2006

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Strain relaxation of SiGe/Si(110) has been studied by x-ray reciprocal space mapping. To get information about the in-plane lattice mismatch in different directions, two-dimensional maps around, e.g., (260) and (062) reciprocal lattice points have been obtained from Si0.8Ge0.2/Si(110) samples, which were exposed to different annealing conditions. The in-plane lattice mismatch was found to be asymmetric with the major strain relaxation observed in the lateral [001] direction. This was associated with the formation and propagation of dislocations oriented along [math10]. The relaxation of as-grown structures during postannealing is thus different from relaxation during growth, which is mainly along [math10].
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81.05.Cy Elemental semiconductors
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Cc Kinetics of defect formation and annealing
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Determination of the elastic modulus of native collagen fibrils via radial indentation

August J. Heim, William G. Matthews, and Thomas J. Koob

Appl. Phys. Lett. 89, 181902 (2006); http://dx.doi.org/10.1063/1.2367660 (3 pages) | Cited 15 times

Online Publication Date: 30 October 2006

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The authors studied the elastic response of single, native collagen fibrils extracted from tissues of the inner dermis of the sea cucumber, Cucumaria frondosa, via local nanoscale indentation with an atomic force microscope (AFM). AFM imaging of fibrils under ambient conditions are presented, demonstrating a peak-to-peak periodicity, the d band, of dehydrated, unfixed fibrils to be ∼ 64.5 nm. Radial indentation experiments were performed, and the measured value for the reduced modulus is 1–2 GPa.
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87.15.La Mechanical properties
87.14.E- Proteins

Room temperature ferromagnetism in Mn-doped γ-Ga2O3 with spinel structure

Hiroyuki Hayashi, Rong Huang, Hidekazu Ikeno, Fumiyasu Oba, Satoru Yoshioka, Isao Tanaka, and Saki Sonoda

Appl. Phys. Lett. 89, 181903 (2006); http://dx.doi.org/10.1063/1.2369541 (3 pages) | Cited 22 times

Online Publication Date: 30 October 2006

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Mn-doped Ga2O3 (7 cation % of Mn) thin film has been grown on c-cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows γ phase with spinel structure, which is different from undoped film showing β phase. No secondary phase can be detected. Combination of Mn-L2,3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
68.37.Lp Transmission electron microscopy (TEM)

Optical and structural properties of polycrystalline 3C-SiC films

A. Haddad-Adel, T. Inokuma, Y. Kurata, and S. Hasegawa

Appl. Phys. Lett. 89, 181904 (2006); http://dx.doi.org/10.1063/1.2360923 (3 pages) | Cited 2 times

Online Publication Date: 30 October 2006

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In this letter, polycrystalline 3C-SiC (111) films were deposited by plasma enhanced chemical vapor deposition system at a temperature of 670 °C using a gas mixture of SiH4/CH4/H2/(CF4). The optical properties of deposited films with different feed gases and different structures were investigated. In these studies, a broad photoluminescence band was observed for films with lower crystallinity and the radiative transitions between the conduction and valance band tails were suggested as the origin of the observed peak. The band gap of these polycrystalline SiC films was estimated at around 2.10 eV.
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81.05.Hd Other semiconductors
78.66.Li Other semiconductors
68.55.-a Thin film structure and morphology
78.55.Hx Other solid inorganic materials
71.20.Nr Semiconductor compounds
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

First stages of the formation of Ni silicide by atom probe tomography

K. Hoummada, E. Cadel, D. Mangelinck, C. Perrin-Pellegrino, D. Blavette, and B. Deconihout

Appl. Phys. Lett. 89, 181905 (2006); http://dx.doi.org/10.1063/1.2370501 (3 pages) | Cited 19 times

Online Publication Date: 30 October 2006

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Atom probe tomography assisted by femtosecond laser pulses has been performed on a Ni(Pt) film on (100)Si. Two phases with different compositions were found to form during deposition at room temperature: a NiSi layer with a relatively constant thickness of approximately 2 nm and a particle of Ni2Si. The shape of the Ni2Si particle is in accordance with nucleation followed by lateral growth formation. This confirms the growth model deduced from calorimetric measurement of silicides and intermetallics and from atom probe tomography studies of the Al/Co system. A nonuniform redistribution of Pt was also observed.
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68.35.Fx Diffusion; interface formation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Solidlike spreading of a liquid/liquid system

Y. Cheng, X. Ye, and H. R. Ma

Appl. Phys. Lett. 89, 181906 (2006); http://dx.doi.org/10.1063/1.2372598 (3 pages) | Cited 1 time

Online Publication Date: 30 October 2006

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The authors report an investigation of spreading of a polydimethylsiloxane oil drop on the surface of solution with very low Triton X-100 concentration. The spreading rate is found to be extremely lower than expected from the current theory. The spreading consists of two stages: the first stage has a precursor film formed which dissipates the redundant surface free energy and is responsible for the slow down of spreading rate as in the case of spreading on a solid surface, and the second stage is a normal spreading process on the liquid surface.
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68.08.Bc Wetting
68.03.Cd Surface tension and related phenomena
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