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30 Oct 2006

Volume 89, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 89, 181101 (2006); http://dx.doi.org/10.1063/1.2372737 (3 pages)

Z. D. Gao, S. N. Zhu, Shih-Yu Tu, and A. H. Kung
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Ferroelectric properties of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated capacitors etched in noncrystalline phase

Longhai Wang, Jun Yu, Xin’yi Wen, Yunbo Wang, Junxiong Gao, Feng Liu, Chaogang Wei, and Tianling Ren

Appl. Phys. Lett. 89, 182901 (2006); http://dx.doi.org/10.1063/1.2369628 (3 pages) | Cited 3 times

Online Publication Date: 30 October 2006

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Uniformly patterned Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt capacitor arrays were etched in noncrystalline phase. The ferroelectric layer was well crystallized and contains uniform grains. The capacitors exhibit well-saturated hysteresis loop and excellent fatigue properties in terms of larger saturation polarization Pmax of 53.2 μC/cm2 at an applied voltage of 12 V, higher remnant polarization Pr of 30.5 μC/cm2 for a coercive field of 58 kV/cm, remnant polarization of about 81.2% at 1010 switching cycles, and a low leakage current density of 10−8 A/cm2 at an applied voltage of 3 V. The etching effects on the properties of capacitor were reduced to minimal values, confirmed by scanning electron microscope, energy-dispersive x-ray microanalysis, and piezoresponse force microscopy results. The reliable electric properties and fine profile of the patterns indicate that the capacitors are suitable for ferroelectric random access memories and other integrated ferroelectric devices.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.30.Sk Pulse and digital circuits

Significant temperature and pressure sensitivities of electrical properties in chemically modified multiwall carbon nanotube/methylvinyl silicone rubber nanocomposites

Mei-Juan Jiang, Zhi-Min Dang, and Hai-Ping Xu

Appl. Phys. Lett. 89, 182902 (2006); http://dx.doi.org/10.1063/1.2369643 (3 pages) | Cited 17 times

Online Publication Date: 30 October 2006

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The effects of γ-aminopropyltriethoxy silane coupling agent on electrical properties in multiwall carbon nanotube/methylvinyl silicone rubber nanocomposites were studied. The results showed that the modified nanotubes could be dispersed homogeneously and that they had a tight bonding with the rubber matrix. The concentration of coupling agent played a crucial role in deciding the conductivity and the electrical properties of the nanocomposites exhibited strong dependences on temperature and pressure. Dependences of electrical properties on temperature and pressure were also improved by increasing the content of coupling agent.
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72.80.Tm Composite materials
73.63.-b Electronic transport in nanoscale materials and structures
81.16.-c Methods of micro- and nanofabrication and processing

Charge and polarization distributions at the 90° domain wall in barium titanate ferroelectric

Qingsong Zhang and William A. Goddard

Appl. Phys. Lett. 89, 182903 (2006); http://dx.doi.org/10.1063/1.2374676 (3 pages) | Cited 7 times

Online Publication Date: 31 October 2006

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The authors use the PQEq force field based on quantum mechanics studies to provide a first-principles description of the 90° domain wall in barium titanate. Using periodic cells with lengths of up to 74 nm (5120 atoms), the authors find that the domain wall thickness is 21 nm in which the polarization switches over a 5 nm central layer surrounded by two transition layers each 8 nm wide. The central 5 nm layer consists of a 2 nm sublayer with overshooting polarizations and a 3 nm sublayer with reversed polarization. This structure explains the discrepancies in previous analyses, which have suggested domain walls ranging from 100 nm to 1 nm. These results should be of particular importance in developing nanoscale ferroelectric devices.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Relaxor behavior in CaCu3Ti4O12 ceramics

Shanming Ke, Haitao Huang, and Huiqing Fan

Appl. Phys. Lett. 89, 182904 (2006); http://dx.doi.org/10.1063/1.2374682 (3 pages) | Cited 45 times

Online Publication Date: 31 October 2006

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The dielectric properties of CaCu3Ti4O12 (CCTO) ceramics have been investigated in a temperature range of 143–573 K and a frequency range of 1 Hz–10 MHz. A dielectric anomaly has been observed between 350 and 600 K. The broad dielectric peaks in ε′(T) can be well fitted by a modified Curie-Weiss law and a Vogel-Fulcher relationship, which is indicative of a relaxor ferroelectric behavior. A slim I-V loop as well as the P-E hysteresis loop and broad maxima in ε″(f) also suggest the existence of a relaxor ferroelectric behavior in CCTO ceramics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis

BiFeO3 film deposited on Si substrate buffered with La0.7Sr0.3MnO3 electrode

D. H. Wang, L. Yan, C. K. Ong, and Y. W. Du

Appl. Phys. Lett. 89, 182905 (2006); http://dx.doi.org/10.1063/1.2374805 (3 pages) | Cited 19 times

Online Publication Date: 31 October 2006

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A multilayer film of BiFeO3/La0.7Sr0.3MnO3/SrTiO3 was deposited on Si substrate by pulsed laser deposition method, in which La0.7Sr0.3MnO3 was used as a bottom electrode. X-ray diffraction showed that the film was polycrystalline. From the x-ray photoelectron spectroscopy measurement, the valence number of the Fe ion was found to be 3+. The BiFeO3 film showed a low leakage-current density, and a large twice remanent polarization (2Pr) of 110 μC/cm2 was observed at room temperature. Owing to the ferromagnetic and magnetostrictive properties of La0.7Sr0.3MnO3, this multilayer film system is a promising candidate for the study of magnetoelectric coupling.
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81.15.Fg Pulsed laser ablation deposition
75.50.Dd Nonmetallic ferromagnetic materials
75.80.+q Magnetomechanical effects, magnetostriction
77.22.Ej Polarization and depolarization
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
79.60.Jv Interfaces; heterostructures; nanostructures

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN/Al2O3 prepared by pulsed laser deposition

Sang-A Lee, Jae-Yeol Hwang, Jong-Pil Kim, Se-Young Jeong, and Chae-Ryong Cho

Appl. Phys. Lett. 89, 182906 (2006); http://dx.doi.org/10.1063/1.2374806 (3 pages) | Cited 9 times

Online Publication Date: 1 November 2006

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(math01)-oriented β-Ga2O3/GaN thin films were epitaxially grown by pulsed laser deposition. These films have the specific in-plane orientation, which was confirmed by φ scans of Ga2O3 (111) and (math11) reflections. When oxygen flow rate was increased, the surface morphologies and roughness of β-Ga2O3 drastically changed. The β-Ga2O3/GaN structure showed a stable and sharp interface and uniform elemental distribution in depth. The dielectric constant and memory window of β-Ga2O3/GaN were about 13.9 and 0.50 V for oxygen flow rate of 5 SCCM (SCCM denotes cubic centimeter per minute at STP).
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Fg Pulsed laser ablation deposition
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
77.22.Ch Permittivity (dielectric function)

Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

E. A. Fardin, A. S. Holland, K. Ghorbani, E. K. Akdogan, W. K. Simon, A. Safari, and J. Y. Wang

Appl. Phys. Lett. 89, 182907 (2006); http://dx.doi.org/10.1063/1.2374810 (3 pages) | Cited 10 times

Online Publication Date: 1 November 2006

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Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25–400 nm. At a critical thickness of ∼ 200 nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400 nm film. Microwave properties of the films were measured from 1 to 20 GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200 nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.
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68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.40.Lm Deformation, plasticity, and creep

Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma

M.-H. Cho, K. B. Chung, and D.-W. Moon

Appl. Phys. Lett. 89, 182908 (2006); http://dx.doi.org/10.1063/1.2374852 (3 pages) | Cited 14 times

Online Publication Date: 2 November 2006

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The thermal stability and electronic structure of nitrided xHfO2(100−x)SiO2 (HfSiO) (x = 30%, 55%, and 70%), prepared using a direct N plasma treatment, were investigated. N 1s spectra of nitrided Hf silicate films indicate that complex chemical states are generated. In particular, energy states with a high binding energy are stable, even after a postnitridation annealing. The quantity of N incorporated into the film is not dependent on the mole fraction of HfO2 in the film, while the thermal stability of the N in the film is significantly influenced by the fraction of HfO2 present. The thermal stability of the N in the film critically affects the composition and thickness of the film: i.e., after the postnitridation annealing, the thickness of the silicate film and the quantity of Hf and N are decreased, as the result of the dissociation of unstable Hf–N bonds.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.60.Dv Thermal stability; thermal effects
71.20.Ps Other inorganic compounds
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
52.77.-j Plasma applications
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