APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

30 Oct 2006

Volume 89, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 181101 (2006); http://dx.doi.org/10.1063/1.2372737 (3 pages)

Z. D. Gao, S. N. Zhu, Shih-Yu Tu, and A. H. Kung
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Room temperature metal direct bonding

Q.-Y. Tong

Appl. Phys. Lett. 89, 182101 (2006); http://dx.doi.org/10.1063/1.2367663 (3 pages) | Cited 9 times

Online Publication Date: 30 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A highly scalable room temperature direct bonding in air between aligned metal posts on oxide-covered silicon wafers has been developed. With the help of the forces generated by strong room temperature bonding between oxide layers on mating wafers, the compression forces for thermocompression metal bonding is self-satisfied and no external pressure is required. When the height of the metal extended above the oxide surface is reduced, the width of an unbonded ring around the metal posts is reduced. Interdiffusion and/or self-diffusion of metal atoms at the interface of intimately contacted posts are most likely responsible for forming metallic bonds. A 50 Å thick layer of Au may be deposited on top of the posts to promote electrical connections between posts of almost any metal.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Thermal detection mechanism of SiC based hydrogen resistive gas sensors

Timothy J. Fawcett, John T. Wolan, Anita Lloyd Spetz, Meralys Reyes, and Stephen E. Saddow

Appl. Phys. Lett. 89, 182102 (2006); http://dx.doi.org/10.1063/1.2360905 (3 pages) | Cited 8 times

Online Publication Date: 30 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673 K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4 K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism.
Show PACS
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Infrared spectroscopy on the charge accumulation layer in rubrene single crystals

Matthias Fischer, Martin Dressel, Bruno Gompf, Ashutosh K. Tripathi, and Jens Pflaum

Appl. Phys. Lett. 89, 182103 (2006); http://dx.doi.org/10.1063/1.2370743 (3 pages) | Cited 19 times

Online Publication Date: 30 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
To get access to the intrinsic properties of organic semiconductors, investigations on single crystals are essential. The authors report on far- and mid-infrared spectroscopies of the charge accumulation layer in an organic field-effect transistor fabricated on a rubrene single crystal. By charge modulation spectroscopy in the range between 70 and 4750 cm−1, they were able to detect the Drude response of the accumulated charges in the channel. From this they can extract important intrinsic transport parameters such as the mobility, the plasma frequency, the effective mass, and the scattering rate.
Show PACS
78.30.Jw Organic compounds, polymers
72.20.Fr Low-field transport and mobility; piezoresistance
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
85.30.Tv Field effect devices

Room-temperature epitaxial growth of AlN on atomically flat MgAl2O4 substrates

Guoqiang Li, Jitsuo Ohta, Atsushi Kobayashi, and Hiroshi Fujioka

Appl. Phys. Lett. 89, 182104 (2006); http://dx.doi.org/10.1063/1.2372685 (3 pages) | Cited 7 times

Online Publication Date: 30 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have grown AlN films on atomically flat MgAl2O4 (111) substrates at room temperature (RT) by pulsed-laser deposition. The in situ reflection high-energy electron diffraction image exhibits a streaky pattern, and the root-mean-square value of the surface roughness as measured by atomic force microscopy is as low as 0.45 nm, which indicates that single-crystalline AlN grows epitaxially on MgAl2O4 with a smooth surface, even at RT. Electron backscattered diffraction and x-ray diffraction measurements reveal that AlN {11−20} shows a clear sixfold symmetry without 30° rotational domains, and the epitaxial relationship is AlN [11−20]‖MgAl2O4 [0−11]. Grazing incidence angle x-ray reflectivity characterization indicates that the interfacial reaction between AlN and MgAl2O4 is completely suppressed in the case of RT growth and the heterointerface for the RT-AlN/MgAl2O4 structure is abrupt and thermally stable.
Show PACS
81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
68.47.Fg Semiconductor surfaces
68.37.Ps Atomic force microscopy (AFM)

Complementary organic field effect transistors by ultraviolet dielectric interface modification

Niels Benson, Martin Schidleja, Christian Melzer, Roland Schmechel, and Heinz von Seggern

Appl. Phys. Lett. 89, 182105 (2006); http://dx.doi.org/10.1063/1.2372702 (3 pages) | Cited 18 times

Online Publication Date: 30 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The realization of p- and n-type pentacene organic field effect transistors and an organic inverter stage is reported based on selective ultraviolet (UV) modification of the polymer dielectric in air. Apart from the UV radiation treatment, the device structures are identical. The achieved field effect carrier mobilities for both transistor types are ≈ 0.1 cm2/V s. Similar performance data for both transistor types as well as an observed low current hysteresis qualify the UV treatment for organic complementary metal oxide semiconductor (O-CMOS) technology. The realized O-CMOS inverter exhibits stable operation below its supply voltage, as well as a gain of 17.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Accurate modeling of copper precipitation kinetics including Fermi level dependence

Hsiu-Wu Guo and Scott T. Dunham

Appl. Phys. Lett. 89, 182106 (2006); http://dx.doi.org/10.1063/1.2374689 (3 pages) | Cited 1 time

Online Publication Date: 31 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Copper is one of the most important contaminants for silicon electronics, and it has detrimental effects on device performance if present in active regions. In this work, the authors investigate copper precipitation models including Fermi level dependence that provide the foundation for simulating copper diffusion and precipitation processes in silicon. These models are verified by comparison to experimental measurements.
Show PACS
81.30.Mh Solid-phase precipitation
66.30.J- Diffusion of impurities
71.20.Be Transition metals and alloys

Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Börner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag

Appl. Phys. Lett. 89, 182107 (2006); http://dx.doi.org/10.1063/1.2364146 (3 pages) | Cited 41 times

Online Publication Date: 31 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Room-temperature near-band-edge photoluminescence of ZnO is composed of contributions from free-exciton recombination and its longitudinal-optical phonon replica. By tracking the photoluminescence of ZnO nanowires from 4 K up to room temperature, the authors show that the relative contributions of these emission lines show a strong variation for samples grown under different conditions. The varying coupling strengths of the excitons and phonons thus lead to a significant shift of the energy position of the room-temperature photoluminescence. They verify that this is not caused by laser heating or stress/strain but is most probably related to crystalline imperfections in the surface region.
Show PACS
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
63.20.kk Phonon interactions with other quasiparticles
78.55.Et II-VI semiconductors
78.67.Lt Quantum wires
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.63.Nm Quantum wires

Control of p- and n-type carriers by end-group substitution in oligo-p-phenylenevinylene-based organic field-effect transistors

Takeshi Yasuda, Masatoshi Saito, Hiroaki Nakamura, and Tetsuo Tsutsui

Appl. Phys. Lett. 89, 182108 (2006); http://dx.doi.org/10.1063/1.2384796 (3 pages) | Cited 18 times

Online Publication Date: 31 October 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Organic field-effect transistors (OFETs) consisting of vacuum-evaporated oligo-p-phenylenevinylene derivatives were prepared, and the device characteristics were evaluated. The fabricated OFETs showed typical p-type characteristics for methyl-substituted oligo-p-phenylenevinylene (OPV). A field-effect hole mobility of 0.13 cm2 V−1 s−1 emerged with a threshold voltage of −33 V and an on/off ratio of 5.8×105. On the other hand, OFETs showed typical n-type characteristics for trifluoromethyl-substituted OPV. A field-effect electron mobility of 0.013 cm2 V−1 s−1 emerged with a threshold voltage of 45 V and an on/off ratio of 4.2×104. The authors have observed clear changes from p-channel to n-channel conductions in OFETs by chemically modifying oligo-p-phenylenevinylenes.
Show PACS
85.30.Tv Field effect devices

Observation of coherent biexcitons in ZnO/ZnMgO multiple quantum wells at room temperature

Jeffrey A. Davis, Lap Van Dao, Xiaoming Wen, Peter Hannaford, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, and M. Yano

Appl. Phys. Lett. 89, 182109 (2006); http://dx.doi.org/10.1063/1.2372747 (3 pages) | Cited 4 times

Online Publication Date: 1 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied ZnO/ZnMgO multiple quantum wells by spectrally resolved transient four-wave mixing with both one- and two-color excitations. The presence of an extended signal at negative interpulse delays in the two-color experiment is attributed to the two-photon coherence resulting from the generation of biexcitons. This technique provides a means to observe a transient four-wave mixing from biexcitons in the absence of any other signal, and thereby provides the first clear evidence that biexcitons are present in narrow ZnO/ZnMgO quantum wells at room temperature. Dephasing times of the order of 100 fs for the biexcitons are measured.
Show PACS
78.67.De Quantum wells
78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

H. Otake, T. Kuroda, T. Fujita, T. Ushiyama, A. Tackeuchi, T. Chinone, J.-H. Liang, and M. Kajikawa

Appl. Phys. Lett. 89, 182110 (2006); http://dx.doi.org/10.1063/1.2374686 (3 pages) | Cited 8 times

Online Publication Date: 1 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15–50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40–1.14 ps. The spin relaxation time is found to be proportional to T−0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976) ].
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics

Comparative study of the (0001) and (000math) surfaces of ZnO

S. A. Chevtchenko, J. C. Moore, Ü. Özgür, X. Gu, A. A. Baski, H. Morkoç, B. Nemeth, and J. E. Nause

Appl. Phys. Lett. 89, 182111 (2006); http://dx.doi.org/10.1063/1.2378589 (3 pages) | Cited 21 times

Online Publication Date: 1 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors compare the surface and optical properties of the Zn-polar (0001) and O-polar (000math) surfaces of bulk ZnO samples. For optical characterization, steady-state photoluminescence using a He–Cd laser was measured at 15 and 300 K. At room temperature, the (000math) surface demonstrates nearly double the near-band-edge emission intensity seen for the (0001) surface. Using scanning Kelvin probe microscopy, the authors have measured surface contact potentials of 0.39±0.05 and 0.50±0.05 V for the (0001) and (000math) surfaces, respectively. The resulting small difference in band bending for these two surfaces indicates that charge transfer between the surfaces is not a dominant stabilizing mechanism. Conductive atomic force microscopy studies show enhanced reverse-bias conduction in localized regions on the (000math) vs (0001) surface. The differences in surface conduction and band bending between the two polar surfaces can be attributed to their chemical interactions with hydrogen and water in the ambient.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.47.Fg Semiconductor surfaces
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
73.40.Cg Contact resistance, contact potential
68.37.Ps Atomic force microscopy (AFM)
73.20.At Surface states, band structure, electron density of states

Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

Yoshitaka Taniyasu, Makoto Kasu, and Toshiki Makimoto

Appl. Phys. Lett. 89, 182112 (2006); http://dx.doi.org/10.1063/1.2378726 (3 pages) | Cited 15 times

Online Publication Date: 1 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
For n-type Si-doped AlN with a low Si doping concentration of 3×1017 cm−2, a high room-temperature electron mobility of 426 cm2 V−1 s−1 was achieved, and at 220 K the mobility reached 730 cm2 V−1 s−1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm−3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.
Show PACS
73.61.Ey III-V semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals

Electronic density tailing outside π-conjugated polymer surface

X. T. Hao, T. Hosokai, N. Mitsuo, S. Kera, K. Mase, K. K. Okudaira, and N. Ueno

Appl. Phys. Lett. 89, 182113 (2006); http://dx.doi.org/10.1063/1.2374844 (3 pages) | Cited 9 times

Online Publication Date: 2 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Penning ionization electron spectroscopy (PIES) was adopted to examine surface electronic property of conjugated poly(3-hexylthiophene) (P3HT) aiming to detect the electronic density tailing outside a polymer surface. The electronic wave function of the highest occupied molecular orbital (HOMO) state is shielded by side hexyl chain for a P3HT film with edge-on conformation and was not detected by PIES, while it is tailing outside the polymer surface for face-on conformation and was observed clearly by PIES. The presence of HOMO electronic wave function outside the polymer surface makes it possible to form HOMO-HOMO overlapping with overlayer materials, and therefore more efficient charge transfer is expected in a heterojunction structure for device application.
Show PACS
73.20.At Surface states, band structure, electron density of states
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology

Direct detection of 0.1–20 keV electrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays

Shouleh Nikzad, T. J. Cunningham, Michael E. Hoenk, R. P. Ruiz, D. M. Soules, and Stephen E. Holland

Appl. Phys. Lett. 89, 182114 (2006); http://dx.doi.org/10.1063/1.2360904 (3 pages) | Cited 1 time

Online Publication Date: 2 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Direct detection of 0.1–20 keV electrons is demonstrated using a boron delta doped high purity Si p-i-n diode array. Molecular beam epitaxy is used to grow a delta layer on the back surface of these fully depletable p-i-n diode arrays to form an electrode for detecting shallow-penetrating ionizing radiation. Device structure, processing, and characterization methods used for device testing and measurement of its response to electrons are discussed. Use of this detector for measuring the Si quantum yield over this wide energy range is also discussed.
Show PACS
85.30.Kk Junction diodes
29.40.Wk Solid-state detectors

Electrically detected magnetic resonance in ion-implanted Si:P nanostructures

D. R. McCamey, H. Huebl, M. S. Brandt, W. D. Hutchison, J. C. McCallum, R. G. Clark, and A. R. Hamilton

Appl. Phys. Lett. 89, 182115 (2006); http://dx.doi.org/10.1063/1.2358928 (3 pages) | Cited 29 times

Online Publication Date: 2 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017 cm−3. By restricting this secondary implant to a 100×100 nm2 region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.
Show PACS
76.30.-v Electron paramagnetic resonance and relaxation

Spectromicroscopic evidence for epitaxial poly-Si thin film formed on amorphous Si substrate by nickel induced lateral crystallization

Ie-Hong Hong, Ting-Chang Hsu, Shang-Chieh Yen, Fu-Shiang Lin, Mao-Lin Huang, and Chia-Hao Chen

Appl. Phys. Lett. 89, 182116 (2006); http://dx.doi.org/10.1063/1.2370509 (3 pages)

Online Publication Date: 2 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The spatial variations in the chemical composition and electronic structure of nickel metal induced lateral crystallization (Ni-MILC) of amorphous silicon film with in situ vacuum annealing were investigated by scanning photoelectron spectromicroscopy. Lateral chemistry variations of the Ni-MILC of amorphous silicon were directly imaged. Via a system study of the correlation between the core and valence level spectra, the nature of chemical bonding for the different chemical phases was examined. Our results clearly show that the Ni-MILC in UHV leads to the formation of a high-crystallinity poly-Si film, which was laterally grown over ∼ 20 μm at 500 °C for 1 h.
Show PACS
81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.A- Nucleation and growth
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing

Magnetoresistance oscillations in two-dimensional electron systems under monochromatic and bichromatic radiations

X. L. Lei and S. Y. Liu

Appl. Phys. Lett. 89, 182117 (2006); http://dx.doi.org/10.1063/1.2382739 (3 pages) | Cited 10 times

Online Publication Date: 2 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The magnetoresistance oscillations in high-mobility two-dimensional electron systems induced by two radiation fields of frequencies 31 and 47 GHz are analyzed in a wide magnetic-field range down to 100 G, using the balance-equation approach to magnetotransport for high-carrier-density systems. The frequency mixing processes are shown to be important. The predicted peak positions, relative heights, radiation-intensity dependence and their relation with monochromatic resistivities are in good agreement with recent experimental finding [ M. A. Zudov et al., Phys. Rev. Lett. 96, 236804 (2006) ].
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors

K. J. Chang, S. M. Lahn, and J. Y. Chang

Appl. Phys. Lett. 89, 182118 (2006); http://dx.doi.org/10.1063/1.2382742 (3 pages) | Cited 6 times

Online Publication Date: 2 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-phase γ-In2Se3 thin films have been prepared by the metal organic chemical vapor deposition technique using dual-source precursors, trimethylindium, and hydrogen selenide to obtain a different VI/III ratio by independent adjustment of the precursors’ flow rate. 2 in Si(111) and Si(100) wafers are used as substrates. The films have been characterized by x-ray diffraction and scanning electron microscopy. The single-phase γ-In2Se3 films can be grown on both Si(111) and Si(100) substrates. The optical properties of the films have been studied by photoluminescence measurements. Strong exciton emissions were observed at around 2.14 eV at 20 K. The band gap of γ-In2Se3 at room temperature is estimated at approximately 1.93 eV.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
71.20.Ps Other inorganic compounds
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth

Theoretical study of the electronic transport property of the hydrogen-Pt contact system

Yuanhua Qi, Daren Guan, Yuansheng Jiang, Chengbu Liu, and Dongju Zhang

Appl. Phys. Lett. 89, 182119 (2006); http://dx.doi.org/10.1063/1.2382744 (3 pages) | Cited 2 times

Online Publication Date: 2 November 2006

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
Based on the density functional theory and nonequilibrium Green’s functions method, a theoretical study of the electron transport in a hydrogen-Pt contact system is presented. The variation of the differential conductance with the bias voltage is calculated and a good consistence with that of the experiment is obtained. The transmission resonance peaks are related to the local states in the contact region. The effect of the coupling geometry on the transport properties of the system is discussed.
Show PACS
73.40.Ns Metal-nonmetal contacts

Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

Hiroshi Kanno, Kaoru Toko, Taizoh Sadoh, and Masanobu Miyao

Appl. Phys. Lett. 89, 182120 (2006); http://dx.doi.org/10.1063/1.2374849 (3 pages) | Cited 26 times

Online Publication Date: 3 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO2 has been investigated as a function of Ge fraction (0%–100%) and annealing temperature (320–550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 °C). As a result, large poly-SiGe regions (>20 μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%–100%).
Show PACS
81.05.Gc Amorphous semiconductors
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Cc Kinetics of defect formation and annealing

Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer

Jun Shao, Fangyu Yue, Xiang Lü, Wei Lu, Wei Huang, Zhifeng Li, Shaoling Guo, and Junhao Chu

Appl. Phys. Lett. 89, 182121 (2006); http://dx.doi.org/10.1063/1.2378675 (3 pages) | Cited 13 times

Online Publication Date: 3 November 2006

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
A technique is developed for photomodulated spectroscopy in a long-wavelength region, based on a step-scan Fourier transform infrared spectrometer. The experimental setup is discussed, and photoreflectance (PR) spectra of narrow-gap HgCdTe materials are given as examples at the wavelengths of 5 and 9 μm. The photoluminescence spectra suggest that the PR features are related to the material fundamental gap. The signal-to-noise ratio and spectral resolution of the PR spectrum are quite good for line-shape analysis. The results indicate that the PR spectrum can be well fitted by a third-derivative line-shape function. Advantages and extendability are emphasized, and the potential for advancing the study of narrow-gap materials’ band structures is foreseen.
Show PACS
78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.20.-e Optical properties of bulk materials and thin films
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Highly conductive Sb-doped layers in strained Si

N. S. Bennett, N. E. B. Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O’Reilly, P. J. McNally, G. Cooke, and H. Kheyrandish

Appl. Phys. Lett. 89, 182122 (2006); http://dx.doi.org/10.1063/1.2382741 (3 pages) | Cited 11 times

Online Publication Date: 3 November 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ∼ 10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices.
Show PACS
73.61.Cw Elemental semiconductors
61.72.uf Ge and Si
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close