APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

3 Jul 2006

Volume 89, Issue 1, Articles (01xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 011901 (2006); http://dx.doi.org/10.1063/1.2218670 (3 pages)

L. S. Wang, S. Tripathy, B. Z. Wang, J. H. Teng, S. Y. Chow, and S. J. Chua
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Theory for high Q p-n junction avalanche inductors

Chie-In Lee and Dee-Son Pan

Appl. Phys. Lett. 89, 013501 (2006); http://dx.doi.org/10.1063/1.2218773 (3 pages) | Cited 3 times

Online Publication Date: 5 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A simple theory for p-n junction inductors is presented. The theory explains the previously measured inductances of p-n junction inductors very well. It shows that the measured low quality factors of the earlier report are due to the unnecessary space charge resistances of the p-n junctions adopted in the experiment. A simple theoretical design example of high Q p-n junction inductors is shown to be readily available in silicon.
Show PACS
84.32.Hh Inductors and coils; wiring
84.30.Bv Circuit theory

High efficiency red organic light-emitting devices using tetraphenyldibenzoperiflanthene-doped rubrene as an emitting layer

Kenji Okumoto, Hiroshi Kanno, Yuji Hamada, Hisakazu Takahashi, and Kenichi Shibata

Appl. Phys. Lett. 89, 013502 (2006); http://dx.doi.org/10.1063/1.2218833 (3 pages) | Cited 22 times

Online Publication Date: 5 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Red organic light-emitting devices (OLEDs) have been developed employing a novel fluorescent emitting layer, tetraphenyldibenzoperiflanthene-doped rubrene. The devices are characterized by low driving voltage below 4 V at a current density of 20 mA/cm2 and high color purity with Commission Internationale de l’Eclairage coordinates of (0.66, 0.34). The OLED using the novel emitting layer in combination with the electron-transporting layer consisting of 9,10-bis[4-(6-methylbenzothiazol-2-yl)phenyl]anthracene exhibits a high power efficiency of 5.3 lm/W at a current density of 20 mA/cm2. The half-luminance lifetime of the red OLED is 223 h at a current density of 80 mA/cm2 (initial luminance of 3570 cd/m2). Both the driving voltage and current efficiency of the device are significantly improved compared to a device using tris(8-quinolinolato)aluminum as an electron-transporting layer. The studies on charge transport for the host materials indicate that the high efficiency is attributed to the improved charge injection and balance in the device.
Show PACS
85.60.Jb Light-emitting devices

Demonstration of a silicon-based quantum cellular automata cell

M. Mitic, M. C. Cassidy, K. D. Petersson, R. P. Starrett, E. Gauja, R. Brenner, R. G. Clark, A. S. Dzurak, C. Yang, and D. N. Jamieson

Appl. Phys. Lett. 89, 013503 (2006); http://dx.doi.org/10.1063/1.2219128 (3 pages) | Cited 18 times

Online Publication Date: 5 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the demonstration of a silicon-based quantum cellular automata (QCA) unit cell incorporating two pairs of metallically doped (n+) phosphorus-implanted nanoscale dots, separated from source and drain reservoirs by nominally undoped tunnel barriers. Metallic cell control gates, together with Al–AlOx single electron transistors for noninvasive cell-state readout, are located on the device surface and capacitively coupled to the buried QCA cell. Operation at subkelvin temperatures was demonstrated by switching of a single electron between output dots, induced by a driven single electron transfer in the input dots. The stability limits of the QCA cell operation were also determined.
Show PACS
03.67.Lx Quantum computation architectures and implementations
73.21.La Quantum dots
85.35.-p Nanoelectronic devices
61.72.uf Ge and Si
73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Gk Tunneling

Loss of photocurrent efficiency in low mobility semiconductors: Analytic approach to space charge effects

Nir Tessler and Noam Rappaport

Appl. Phys. Lett. 89, 013504 (2006); http://dx.doi.org/10.1063/1.2219132 (3 pages) | Cited 10 times

Online Publication Date: 5 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We derive an analytic expression for the photocurrent efficiency as a function of the optical excitation power within the framework of space charge limit of Mott and Gurney [Electronic Processes in Ionic Crystals (Oxford University Press, London, 1940)] . This complements the approach based on charge recombination and we show that the two give similar expressions. Namely, in low mobility and intrinsic semiconductors (as conjugated polymers) based photocell, where recombination follows Langevin’s expression, the onsets of space charge and of charge recombination coincide. The analysis shows that the onset of space charge or recombination depends only on the slow carrier mobility value and do not require imbalanced mobility values.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
72.80.Le Polymers; organic compounds (including organic semiconductors)
85.60.-q Optoelectronic devices
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Organic thin-film transistors with poly(methyl silsesquioxane) modified dielectric interfaces

Yiliang Wu, Ping Liu, and Beng S. Ong

Appl. Phys. Lett. 89, 013505 (2006); http://dx.doi.org/10.1063/1.2219143 (3 pages) | Cited 20 times

Online Publication Date: 5 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Poly(methyl silsesquioxane) modification of SiO2 gate dielectric surface leads to significantly improved performance of polythiophene-based organic thin-film transistors. The beneficial effects of this surface modification on transistor performance are often significantly greater than those of other silane self-assembled monolayers (SAMs). This polymer modification approach can also be applied to solution-processed dielectric surfaces where the growth of silane SAMs is difficult, thus enabling fabrication of flexible organic thin-film transistor circuits on plastic substrates.
Show PACS
85.30.Tv Field effect devices
81.65.-b Surface treatments

Capacitance-voltage characterization of polyfluorene-based metal-insulator-semiconductor diodes

M. Yun, R. Ravindran, M. Hossain, S. Gangopadhyay, U. Scherf, T. Bünnagel, F. Galbrecht, M. Arif, and S. Guha

Appl. Phys. Lett. 89, 013506 (2006); http://dx.doi.org/10.1063/1.2219147 (3 pages) | Cited 18 times

Online Publication Date: 5 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal-insulator-semiconductor structures with conjugated polymer ethyl-hexyl substituted polyfluorene (PF2̱6) as the active semiconductor layer, Al2O3 as the insulating oxide layer, and p+-Si as the metal layer have been characterized by means of capacitance-voltage (C-V) and conductance-voltage methods. The negative shift of the flat-band voltage with increasing frequency arises from positive interface charges in the PF2̱6/Al2O3 layer. From C-V measurements the unintentional doping density is evaluated as ∼ 5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼ 7.7×1011 eV−1 cm−2 at the flat-band voltage.
Show PACS
85.30.Kk Junction diodes
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Multilevel conductance switching in polymer films

M. Lauters, B. McCarthy, D. Sarid, and G. E. Jabbour

Appl. Phys. Lett. 89, 013507 (2006); http://dx.doi.org/10.1063/1.2219338 (3 pages) | Cited 43 times

Online Publication Date: 5 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Multilevel conductance switching in poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) films is demonstrated. A thin-film structure, ITO-coated glass/MEH-PPV/Al, has shown the ability to store a continuum of conductance states. These states are nonvolatile and can be switched reproducibly by applying appropriate programing biases above a certain threshold voltage. The electrical conductivity of the highest and lowest states can differ by five orders of magnitude. Furthermore, these devices exhibit good cyclic switching characteristics and retention times of several weeks.
Show PACS
73.61.Ph Polymers; organic compounds
73.20.At Surface states, band structure, electron density of states

Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers

H. F. W. Dekkers, L. Carnel, and G. Beaucarne

Appl. Phys. Lett. 89, 013508 (2006); http://dx.doi.org/10.1063/1.2219142 (3 pages) | Cited 20 times

Online Publication Date: 6 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Hydrogenation by high temperature rapid annealing of SiNx:H is found to be very effective on the defects responsible for the carrier trapping effect in multicrystalline silicon. The passivation effect is reversible and is annihilated by a long thermal annealing. As for the passivation of deep, lifetime killing defects, the efficiency of “trap” removal by the short thermal treatment depends on the density of the SiNx:H layer. This effect is, in fact, well correlated with performance improvement observed in solar cells. The parallelism between the trap and recombination center passivation effects suggests that they originate from the same defect.
Show PACS
84.60.Jt Photoelectric conversion
61.72.Cc Kinetics of defect formation and annealing
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Light emission at 5 V from a polymer device with a millimeter-sized interelectrode gap

Joon-Ho Shin, Andrzej Dzwilewski, Agnieszka Iwasiewicz, Steven Xiao, Åke Fransson, Genesis Ngwa Ankah, and Ludvig Edman

Appl. Phys. Lett. 89, 013509 (2006); http://dx.doi.org/10.1063/1.2219122 (3 pages) | Cited 29 times

Online Publication Date: 7 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the onset of electrochemical doping and subsequent visible light emission at 5 V and 360 K from a planar light-emitting electrochemical cell with a 1 mm interelectrode gap containing poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1, 4-phenylenevinylene] (MEH-PPV), poly(ethylene oxide) (PEO), and XCF3SO3 (X = K,Li) as the active material. We rationalize the unprecedented low turn-on voltage of such wide-gap light-emitting electrochemical cells by demonstrating that the active material contains a mixture of crystalline PEO+XCF3SO3 domains and amorphous MEH-PPV domains at room temperature, but that the crystalline domains have melted at 360 K resulting in a significant increase in the ionic conductivity.
Show PACS
85.60.Jb Light-emitting devices
82.47.Jk Photoelectrochemical cells, photoelectrochromic and other hybrid electrochemical energy storage devices

Implantation assisted copper diffusion: A different approach for the preparation of CuInS2/In2S3 p-n junction

K. C. Wilson, Tina Sebastian, Teny Theresa John, C. Sudha Kartha, K. P. Vijayakumar, P. Magudapathi, and K. G. M. Nair

Appl. Phys. Lett. 89, 013510 (2006); http://dx.doi.org/10.1063/1.2219135 (3 pages) | Cited 2 times

Online Publication Date: 7 July 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Copper indium sulfide thin films were prepared using copper diffusion into argon ion implanted In2S3 thin films. A comparative study of copper diffusion in pristine and ion implanted In2S3 samples was also performed. It was found that copper indium sulfide formation was much better in argon implanted samples compared to that in unimplanted samples. Copper diffusion in implanted samples enabled us to prepare an In2S3/CuInS2 solar cell. The fill factor of the cell prepared was 30.2% and the efficiency was 0.34%.
Show PACS
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.up Other materials
68.35.Fx Diffusion; interface formation
84.60.Jt Photoelectric conversion
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close