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3 Jul 2006

Volume 89, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 89, 011901 (2006); http://dx.doi.org/10.1063/1.2218670 (3 pages)

L. S. Wang, S. Tripathy, B. Z. Wang, J. H. Teng, S. Y. Chow, and S. J. Chua
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Piezoelectricity of A3BC3D2O14 structure crystals

Jianjun Chen, Yanqing Zheng, Haikuan Kong, and Erwei Shi

Appl. Phys. Lett. 89, 012901 (2006); http://dx.doi.org/10.1063/1.2219123 (3 pages) | Cited 5 times

Online Publication Date: 5 July 2006

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First-principle calculations are performed to reveal the microscopic origin of piezoelectricity of ordered crystals with A3BC3D2O14 structure. The calculated piezoelectric constant e11 and atomistic piezoelectric contribution from every single atom type in a primitive cell of Sr3NbGa3Si2O14 (SNGS), Sr3TaGa3Si2O14 (STGS), Ca3NbGa3Si2O14 (CNGS), and Ca3TaGa3Si2O14 (CTGS) structures showed that the piezoelectricity comes mostly from one of three atoms in A positions. The percentages of the contributions from the A positions to the total internal piezoelectric constant exceed 69% in CNGS and CTGS and 81% in SNGS and STGS, respectively.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

E. Rauwel, C. Dubourdieu, B. Holländer, N. Rochat, F. Ducroquet, M. D. Rossell, G. Van Tendeloo, and B. Pelissier

Appl. Phys. Lett. 89, 012902 (2006); http://dx.doi.org/10.1063/1.2216102 (3 pages) | Cited 37 times

Online Publication Date: 5 July 2006

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Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0–99.5 at. %). The cubic structure of HfO2 is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5–10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5×10−7 A/cm2 at −1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 °C under NH3.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology

Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure

M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong

Appl. Phys. Lett. 89, 012903 (2006); http://dx.doi.org/10.1063/1.2218826 (3 pages) | Cited 31 times

Online Publication Date: 6 July 2006

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The valence-band offset has been determined to be 3.83±0.05 eV at the atomic-layer-deposition Al2O3/InGaAs interface by x-ray photoelectron spectroscopy. The Au–Al2O3/InGaAs metal-oxide-semiconductor diode exhibits current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, a conduction-band offset of 1.6±0.1 eV at the Al2O3–InGaAs interface and an electron effective mass ∼ 0.28±0.04m0 of the Al2O3 layer have been extracted. Consequently, combining the valence-band offset, the conduction-band offset, and the energy-band gap of the InGaAs, the energy-band gap of the atomic-layer-deposited Al2O3 is 6.65±0.11 eV.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

L. Miotti, C. Driemeier, F. Tatsch, C. Radtke, and I. J. R. Baumvol

Appl. Phys. Lett. 89, 012904 (2006); http://dx.doi.org/10.1063/1.2219150 (3 pages) | Cited 4 times

Online Publication Date: 6 July 2006

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Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C induces decomposition of the aluminate films leading to Hf and Al losses mainly into the gas phase. It was possible to avoid this undesired decomposition effect by performing a postdeposition nitridation in NH3 at 850 °C prior to the rapid thermal annealing step. The role of nitridation is discussed in terms of the profiles of incorporated N, before and after rapid thermal annealing, as determined by narrow resonant nuclear reaction profiling.
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77.55.-g Dielectric thin films
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
73.61.Ng Insulators
61.72.Cc Kinetics of defect formation and annealing
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
64.75.-g Phase equilibria

Thermochemical reaction of ZrOx(Ny) interfaces on Ge and Si substrates

Chao-Ching Cheng, Chao-Hsin Chien, Je-Hung Lin, Chun-Yen Chang, Guang-Li Luo, Chun-Hui Yang, and Shih-Lu Hsu

Appl. Phys. Lett. 89, 012905 (2006); http://dx.doi.org/10.1063/1.2219347 (3 pages) | Cited 2 times

Online Publication Date: 6 July 2006

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We have studied the thermochemical characteristics of ZrOx(Ny)/Ge and Si interfaces by employing postdeposition annealing. We found that Ge oxide species severely desorbed from the inherent interfacial layer, which was speculated to retard the formation of Zr germanate during high-temperature processing. These unique features enable ZrOx(Ny)/Ge gate stack to show a better equivalent-oxide-thickness scalability as compared to ZrOx(Ny)/Si gate stack. However, the volatilization of GeOx-contained interfacial layer also caused the formation of small pits and/or holes in the overlying ZrOx(Ny) gate dielectrics, which was expected to cause deterioration in the electrical properties of fabricated high-k/Ge devices.
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77.55.-g Dielectric thin films
68.35.Fx Diffusion; interface formation
81.40.Gh Other heat and thermomechanical treatments
68.43.Mn Adsorption kinetics

Study on the resistive switching time of TiO2 thin films

Byung Joon Choi, Seol Choi, Kyung Min Kim, Yong Cheol Shin, Cheol Seong Hwang, Sung-Yeon Hwang, Sung-sil Cho, Sanghyun Park, and Suk-Kyoung Hong

Appl. Phys. Lett. 89, 012906 (2006); http://dx.doi.org/10.1063/1.2219726 (3 pages) | Cited 57 times

Online Publication Date: 7 July 2006

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The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼ 0.07 μm2) was studied as a function of pulse voltage. For off→on switching at least 2 V was necessary and the minimum switching times were ∼ 20 ns at 2 V and ∼ 10 ns at 3 V. For on→off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.
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73.61.Ng Insulators
73.40.-c Electronic transport in interface structures

High temperature (NaBi)0.48◻0.04Bi2Nb2O9-based piezoelectric ceramics

Zhi-Gang Gai, Jin-Feng Wang, Ming-Lei Zhao, Chun-Ming Wang, Guo-Zhong Zang, Bao-Quan Ming, Peng Qi, Shujun Zhang, and Thomas R. Shrout

Appl. Phys. Lett. 89, 012907 (2006); http://dx.doi.org/10.1063/1.2216355 (3 pages) | Cited 17 times

Online Publication Date: 7 July 2006

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The effect of (LiCe) substitution for A site on the properties of (NaBi)0.48◻0.04Bi2Nb2O9 (NB◻N)-based ceramics was investigated. The coercive fields (EC) of NB◻N)-based ceramics were significantly decreased from 61.0 to 32.5 kV/cm and the Curie temperature (TC) gradually decreases from 820 to 803 °C with increasing the (LiCe) modification. The piezoelectric coefficient d33, planar coupling factor kp, and mechanical quality factor Q of (NaBi)0.38(LiCe)0.05◻0.14Bi2Nb2O9 ceramic were found to be 27 pC/N, 11.2%, and 2600, respectively, together with the high TC ( ∼ 809 °C) and stable piezoelectric properties, demonstrating that the (LiCe) modified NB◻N-based material a promising candidate for high temperature applications.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.80.-e Ferroelectricity and antiferroelectricity
61.72.J- Point defects and defect clusters
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