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3 Jul 2006

Volume 89, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 89, 011901 (2006); http://dx.doi.org/10.1063/1.2218670 (3 pages)

L. S. Wang, S. Tripathy, B. Z. Wang, J. H. Teng, S. Y. Chow, and S. J. Chua
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Low-resistance p+ layer formation into diamond using heavily B ion implantation

Nobuteru Tsubouchi, Masahiko Ogura, Yuji Horino, and Hideyo Okushi

Appl. Phys. Lett. 89, 012101 (2006); http://dx.doi.org/10.1063/1.2219088 (3 pages) | Cited 7 times

Online Publication Date: 5 July 2006

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We examine the B dosage dependence of the lattice and electronic structures of a heavily B doped layer formed by multiple-energy B-implantation into diamond (up to 1.7×1017 B cm−2) at an elevated temperature. The resultant highly B doped diamond layer exhibits p-type conduction with very low sheet resistance of 90 Ω/◻ (0.25 μm thickness) and low resistivity of 2.3 mΩ cm and has temperature-independent transport properties. This suggests that a high-temperature ion implantation technique allows the formation of diamond as a p-type degenerate semiconductor with metallic conduction and provides a useful tool for selective doping required for practical diamond device processing.
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81.05.Cy Elemental semiconductors
73.61.Cw Elemental semiconductors
61.72.up Other materials
71.20.Mq Elemental semiconductors
68.55.-a Thin film structure and morphology

Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2/Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy

H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda

Appl. Phys. Lett. 89, 012102 (2006); http://dx.doi.org/10.1063/1.2219126 (3 pages) | Cited 6 times

Online Publication Date: 6 July 2006

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We have investigated annealing-time dependence in interfacial reactions between polycrystalline-Si (poly-Si) electrodes and HfO2/Si gate stacks using synchrotron radiation photoemission and x-ray absorption spectroscopy. From photoemission core-level spectra, we found that silicidation started at the upper interface between poly-Si electrodes and HfO2 gate dielectrics under the conditions of 700 °C and 3 min in ultrahigh vacuum. Before silicidation, we observed nonstoichiometric silicon oxide at the upper interface, suggesting the formation of oxygen vacancies which may cause Fermi level pinning. The interface layer between HfO2 gate dielectrics and Si substrates was changed into silicide by further annealing. In addition, from valence-band photoemission and O K-edge absorption spectra, we have found that the crystallization of HfO2 gate dielectrics is independent of silicidation.
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61.72.Cc Kinetics of defect formation and annealing
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
78.70.Dm X-ray absorption spectra
73.20.At Surface states, band structure, electron density of states
64.70.K- Solid-solid transitions

Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n+-GaAs Esaki diode

M. Kohda, T. Kita, Y. Ohno, F. Matsukura, and H. Ohno

Appl. Phys. Lett. 89, 012103 (2006); http://dx.doi.org/10.1063/1.2219141 (3 pages) | Cited 23 times

Online Publication Date: 6 July 2006

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We investigated injection of spin polarized electrons in a (Ga,Mn)As/n+-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Jb Light-emitting devices

Polypyrrole thin-film field-effect transistor

C. C. Bof Bufon and T. Heinzel

Appl. Phys. Lett. 89, 012104 (2006); http://dx.doi.org/10.1063/1.2219375 (3 pages) | Cited 10 times

Online Publication Date: 6 July 2006

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The operation of a polypyrrole thin-film field-effect transistor at room temperature is reported. The polymer film is prepared by a technique based on chemical polymerization, which is capable of forming thin films with low roughness. The technique is compatible with conventional silicon processing and allows a lithographic definition of the polymer film geometry. Transport measurements indicate that the device works as Schottky barrier-type field-effect transistor. We further demonstrate that the polymer film is sensitive to oxygen exposure.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
73.30.+y Surface double layers, Schottky barriers, and work functions

Switching effect in spin field-effect transistors

K. M. Jiang, Z. M. Zheng, Baigeng Wang, and D. Y. Xing

Appl. Phys. Lett. 89, 012105 (2006); http://dx.doi.org/10.1063/1.2219742 (3 pages) | Cited 15 times

Online Publication Date: 7 July 2006

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We study how the conductance of a spin field-effect transistor (SFET) is manipulated by spin-orbit coupling strength, interfacial barrier height, and spin polarization in source and drain. It is shown that the conductance of the SFET exhibits an excellent switching characteristic for high potential barriers. By tuning the split-gate voltage one can vary the Dresselhaus [Phys. Rev. 100, 580 (1955) ] spin-orbit coupling strength so as to switch the SFET on or off. On the other hand, in the SFET with almost Ohmic-contact interfaces there is pronounced conductance modulation mainly due to the Rashba [Sov. Phys. Solid State 2, 1190 (1960) ] and Dresselhaus spin precession.
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85.75.Hh Spin polarized field effect transistors

Electrical characterization of GaAs metal bonded to Si

Justin R. Bickford, D. Qiao, P. K. L. Yu, and S. S. Lau

Appl. Phys. Lett. 89, 012106 (2006); http://dx.doi.org/10.1063/1.2219980 (3 pages) | Cited 1 time

Online Publication Date: 7 July 2006

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Wafer bonding has traditionally focused on producing either insulating or nonlinear heterostructure interfaces; low-resistance Ohmic interfaces would offer the advantage of more efficient current delivery. In this study, doped GaAs was bonded to doped Si using indium and palladium interlayers. During heating above the lower melting point metal indium, a solid alloy is formed bonding the GaAs and Si together, this process is typically referred to as isothermal solidification. This method universally created Ohmic bond interfaces for all doping types. A metric was devised to measure the bond resistivity revealing a resistivity of 1.03×10−5 Ω cm2 for n-GaAs bonded to p-Si.
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73.40.Vz Semiconductor-metal-semiconductor structures
81.40.Gh Other heat and thermomechanical treatments
81.30.Fb Solidification

Origin of the enhanced performance in poly(3-hexylthiophene): [6,6]-phenyl C61-butyric acid methyl ester solar cells upon slow drying of the active layer

Valentin D. Mihailetchi, Hangxing Xie, Bert de Boer, Lacramioara M. Popescu, Jan C. Hummelen, Paul W. M. Blom, and L. Jan Anton Koster

Appl. Phys. Lett. 89, 012107 (2006); http://dx.doi.org/10.1063/1.2212058 (3 pages) | Cited 105 times

Online Publication Date: 7 July 2006

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The origin of the enhanced performance of bulk heterojunction solar cells based on slowly dried films of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester is investigated, combining charge transport measurements with numerical device simulations. Slow drying leads to a 33-fold enhancement of the hole mobility up to 5.0×10−7 m2 V−1 s−1 in the P3HT phase of the blend, thereby balancing the transport of electrons and holes in the blend. The resulting reduction of space-charge accumulation enables the use of thick films ( ∼ 300 nm), absorbing most of the incoming photons, without losses in the fill factor and short-circuit current of the device.
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84.60.Jt Photoelectric conversion
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.05.ub Fullerenes and related materials
73.61.Ph Polymers; organic compounds
73.61.Wp Fullerenes and related materials
85.30.De Semiconductor-device characterization, design, and modeling

Current spin-polarization in an inhomogeneous semiconductor

L. Villegas-Lelovsky

Appl. Phys. Lett. 89, 012108 (2006); http://dx.doi.org/10.1063/1.2219410 (3 pages) | Cited 2 times

Online Publication Date: 7 July 2006

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We investigate the spin-resolved transient dynamics of spin-polarized carriers injected via a ferromagnetic scanning-tunneling-microscope tip into nonuniformly n-doped bulk semiconductor externally driven by a current source. We propagate the injected spin packets by considering a spin hydrodynamic approach based on balance equations directly derived from a spin-dependent Boltzmann equation. We determine the spin polarization profiles for carrier and current densities. While the carrier spin polarization shows a drastic suppression in the interface the current spin polarization exhibits an enhancement.
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72.80.Ey III-V and II-VI semiconductors
72.25.Dc Spin polarized transport in semiconductors
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