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3 Jul 2006

Volume 89, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 89, 011901 (2006); http://dx.doi.org/10.1063/1.2218670 (3 pages)

L. S. Wang, S. Tripathy, B. Z. Wang, J. H. Teng, S. Y. Chow, and S. J. Chua
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70-mm-long periodically poled Mg-doped stoichiometric LiNbO3 devices for nanosecond optical parametric generation

Masayuki Maruyama, Hirochika Nakajima, Sunao Kurimura, Nan Ei Yu, and Kenji Kitamura

Appl. Phys. Lett. 89, 011101 (2006); http://dx.doi.org/10.1063/1.2219084 (3 pages) | Cited 10 times

Online Publication Date: 5 July 2006

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A low-threshold, nanosecond, optical parametric generator (OPG) was produced by using a 70-mm-long, periodically poled, Mg-doped, stoichiometric LiNbO3 (PPMgSLN). The periodically poled structure was obtained by applying an electric field of 1.8 kV/mm, which is lower than the coercive field of 3.9 kV/mm. The PPMgSLN OPG pumped with a 6 ns, 6.8 kHz, Nd:YAG microchip laser had a generation threshold of 12 MW/cm2 and a slope efficiency of 37% of signal at 1.61 μm.
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42.70.Mp Nonlinear optical crystals
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Yj Optical parametric oscillators and amplifiers
61.66.Bi Elemental solids
61.66.Dk Alloys
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.20.Jq Electro-optical effects

Long-wavelength vertical-cavity surface-emitting laser using an electro-optic index modulator with 10 nm tuning range

C. Levallois, B. Caillaud, J.-L. de Bougrenet de la Tocnaye, L. Dupont, A. Le Corre, H. Folliot, O. Dehaese, and S. Loualiche

Appl. Phys. Lett. 89, 011102 (2006); http://dx.doi.org/10.1063/1.2219144 (3 pages) | Cited 1 time

Online Publication Date: 5 July 2006

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We demonstrate an original approach to achieving a tunable 1.55 μm vertical-cavity surface-emitting laser. The tunability is based on an electro-optic index modulator using nanosized droplets of liquid crystal as a phase layer. Such an approach can produce a robust and a low-cost device. A 10 nm tuning range with less than 170 V applied voltage has been demonstrated. The device is formed by a conventional InP-based active region with an epitaxial and a dielectric Bragg mirror. This optically pumped device exhibits an excellent side-mode suppression ratio of higher than 20 dB over the whole spectral range.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Hp Optical processors, correlators, and modulators
42.79.Kr Display devices, liquid-crystal devices
42.79.Bh Lenses, prisms and mirrors
42.70.Df Liquid crystals

High-temperature random lasing in ZnO nanoneedles

H. Y. Yang, S. P. Lau, S. F. Yu, A. P. Abiyasa, M. Tanemura, T. Okita, and H. Hatano

Appl. Phys. Lett. 89, 011103 (2006); http://dx.doi.org/10.1063/1.2219419 (3 pages) | Cited 11 times

Online Publication Date: 5 July 2006

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We report the high-temperature ultraviolet random laser action in ZnO nanoneedles. The characteristic temperature of the ZnO nanoneedle lasers was derived to be 138 K in the temperature range from 300 to 615 K. The cavity length of the random lasers as a function of temperature was determined by Fourier transform spectroscopy. The cavity length decreased with an increase in temperature from ∼ 14 μm at 300 K to  ∼ 2 μm at 550 K. The optical gain of the ZnO nanoneedle lasers at high temperature is attributed to a self-compensation mechanism in the cavity length.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells

Q. Li, S. J. Xu, G. Q. Li, D. C. Dai, and C. M. Che

Appl. Phys. Lett. 89, 011104 (2006); http://dx.doi.org/10.1063/1.2218772 (3 pages) | Cited 6 times

Online Publication Date: 6 July 2006

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We report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-well (MQW) structures using broadband femtosecond near-infrared excitation laser. Near quadratic excitation-intensity dependence and asymmetric collinear interferometric autocorrelation trace of the TPL signal unambiguously verify the nonlinearity of the TPL process. We also measured the excitation spectrum of the TPL signal and found that it can be fitted well with the theoretical two-photon absorption coefficient formula for direct wide gap semiconductors. The decay time of the TPL signal was determined using a time-resolved photoluminescence technique. These results demonstrate the strong nonlinear optical property of InGaN/GaN MQWs.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics

Charge photogeneration effect on the exciplex emission from thin organic films

J. Kalinowski, M. Cocchi, D. Virgili, and C. Sabatini

Appl. Phys. Lett. 89, 011105 (2006); http://dx.doi.org/10.1063/1.2218821 (3 pages) | Cited 8 times

Online Publication Date: 6 July 2006

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The photoexcited singlet and triplet exciplex emission of thin photocondcuctive films containing an amine derivative N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′diamine (TPD) electron donor and the bathophenathroline (BPT) electron acceptor drops largely with electric fields, falling down to about 20% of its zero-field value at high fields. This strong electric-field-induced exciplex emission quenching is interpreted in terms of the charge-imposed decay of singlet molecular excitons of TPD acting as precursors of the exciplexes and charge photogenerated on the TPD:BPT contacting sites. The favorable interrelation between the ionization potential of the donor and electron affinity of the acceptor leads there to an efficient field-enhanced exciton dissociation. The electrons trapped on acceptor molecules act in turn as charged exciton quenching centers.
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78.66.Qn Polymers; organic compounds
72.40.+w Photoconduction and photovoltaic effects
71.35.-y Excitons and related phenomena

First direct observation of self-imaging effect in active multimode-interference semiconductor laser diodes

Syogo Shimizu, Mohd Dannial Bin Razali, Kenichi Kasahara, Kiichi Hamamoto, Masaki Ohya, Koichi Naniwae, Jan De Merlier, Kazuhiro Shiba, Shinya Sudo, and Tatsuya Sasaki

Appl. Phys. Lett. 89, 011106 (2006); http://dx.doi.org/10.1063/1.2219087 (3 pages)

Online Publication Date: 6 July 2006

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We report the first direct observation of the self-imaging effect in active multimode-interference semiconductor laser diodes (MMI-SLDs). Interference patterns inside laser diode waveguides were obtained by using the electroluminescence (EL) method. To the best of our knowledge, this result is the first direct observation of the self-imaging effect in self-photon-emitting active waveguides such as laser diodes. The observed EL pattern confirms the adequateness of the design of the higher light output-aimed MMI-SLDs.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Optical gain in dye-impregnated oxidized porous silicon waveguides

C. J. Oton, D. Navarro-Urrios, N. E. Capuj, M. Ghulinyan, L. Pavesi, S. González-Pérez, F. Lahoz, and I. R. Martín

Appl. Phys. Lett. 89, 011107 (2006); http://dx.doi.org/10.1063/1.2219121 (3 pages) | Cited 8 times

Online Publication Date: 6 July 2006

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Positive optical gain under pulsed excitation in oxidized porous silicon planar waveguides impregnated with Nile blue (LC 6900) is reported. Amplified spontaneous emission measurements show a dramatic line narrowing when the pump energy is increased, together with a strong superlinear behavior. Variable stripe length measurements were performed to characterize quantitatively the amplification, and an unambiguous transition from losses to gain is observed with a threshold of ∼ 3 mJ/cm2 at 700 nm. A maximum gain coefficient of 8.7 cm−1 ( ∼ 40 dB/cm) is reported. Shifting excitation spot measurements confirm the reliability of our results. This system is interesting in view of an optically pumped silicon-based pulsed laser.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.55.Mv Dye lasers
42.70.Hj Laser materials

Hole emitter of photonic quantum ring

O’Dae Kwon, M. J. Kim, S.-J. An, D. K. Kim, S. E. Lee, J. Bae, J. H. Yoon, B. H. Park, J. Y. Kim, and J. Ahn

Appl. Phys. Lett. 89, 011108 (2006); http://dx.doi.org/10.1063/1.2219346 (3 pages) | Cited 5 times

Online Publication Date: 6 July 2006

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We report on the observation of “hole” whispering gallery lasers from semiconductor microcavities with three dimensional optical confinement, with thresholds potentially reducible to micro- to nanoampere regimes according to a quadratic size-dependent reduction, consistent with a photonic quantum corral effect of naturally formed recombinant quantum rings. If the device size grows over a critical diameter, the quantum ring whispering gallery then begins to disappear. However, cooperative small hole laser arrays, exhibiting photonic crystal structure properties, avoid the criticality and open a possibility of constructing practical high-density electropumped emitter arrays.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials

Design of a ZnMnSe/ZnMgSe spin-polarized terahertz quantum cascade laser tunable by magnetic field

Ivana Savić, Zoran Ikonić, Nenad Vukmirović, Dragan Indjin, Paul Harrison, and Vitomir Milanović

Appl. Phys. Lett. 89, 011109 (2006); http://dx.doi.org/10.1063/1.2219423 (3 pages) | Cited 2 times

Online Publication Date: 6 July 2006

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A design of a magnetic field tunable ZnMnSe/ZnMgSe terahertz quantum cascade laser is proposed. It relies on the spin-dependent potential induced by a magnetic field. The electron dynamics are calculated using the Boltzmann equation approach, with electron-longitudinal optical phonon, electron-longitudinal acoustic phonon, and electron-electron scattering included. Tunability of the emission energy between 10 and 26 meV, and 38 and 42 meV, for transitions of spin-down and spin-up electrons, respectively, may be achieved by varying a magnetic field up to 5 T, at a temperature of 1.5 K. Population inversion of up to 42% for spin-down and 27% for spin-up electrons is predicted, which in conjunction with the estimated waveguide losses, yields sufficient gain for laser operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
78.20.Ls Magneto-optical effects
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
72.25.Dc Spin polarized transport in semiconductors

Thermal relaxation time and heat distribution in pulsed InGaAs quantum dot lasers

P. K. L. Chan, K. P. Pipe, Z. Mi, J. Yang, P. Bhattacharya, and D. Lüerßen

Appl. Phys. Lett. 89, 011110 (2006); http://dx.doi.org/10.1063/1.2219721 (3 pages) | Cited 7 times

Online Publication Date: 7 July 2006

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Using a charge coupled device-based thermoreflectance technique, we achieve a high-resolution ( ∼ 700 nm) cross-sectional temperature profile of a semiconductor laser. This two-dimensional profile allows us to identify separate heat sources due to contact heating and nonradiative recombination in the active region. By adapting the technique to pulsed operation and varying the laser’s duty cycle, we measure the thermal relaxation time constant. We also quantitatively determine the heat transfer from device-internal heat sources and demonstrate both the large effect of lateral heat spreading and the distinction between a laser’s top surface temperature and its active region temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Gain narrowing and random lasing from dye-doped polymer-dispersed liquid crystals with nanoscale liquid crystal droplets

Y. J. Liu, X. W. Sun, H. I. Elim, and W. Ji

Appl. Phys. Lett. 89, 011111 (2006); http://dx.doi.org/10.1063/1.2219988 (3 pages) | Cited 18 times

Online Publication Date: 7 July 2006

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Dye-doped polymer-dispersed liquid crystals have been studied for random lasing. The dye-doped polymer-dispersed liquid crystal film was fabricated by photoinitiated polymerization with a collimated 514.5 nm Ar+ laser beam. Scanning electron microscopy analysis showed that most liquid crystal droplets in polymer matrix ranged from 20 to 80 nm. Gain narrowing and random lasing from dye-doped polymer dispersed liquid crystals were observed under the excitation of a frequency-doubled Nd:YAG (yttrium aluminum garnet) laser operating at a wavelength of 532 nm. The possible mechanism was proposed to explain the random lasing. The threshold of the random lasing was about 25 μJ/pulse. The linewidth of the lasing peaks was about 1 nm. With the film thickness of 6.5 μm, the lasing mode was nearly transverse electric polarized.
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42.55.Zz Random lasers
42.70.Df Liquid crystals
42.70.Hj Laser materials

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M. Williams, and K. Evans

Appl. Phys. Lett. 89, 011112 (2006); http://dx.doi.org/10.1063/1.2219390 (3 pages) | Cited 40 times

Online Publication Date: 7 July 2006

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We report the performance of GaN p-i-n ultraviolet avalanche photodiodes grown on bulk GaN substrates by metal-organic chemical vapor deposition. The low dislocation density in the devices enables low reverse-bias dark currents prior to avalanche breakdown for ∼ 30 μm diameter mesa photodetectors. The photoresponse is relatively independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of ∼ 2.8 MV/cm. The magnitude of the reverse-bias breakdown voltage shows a positive temperature coefficient of ∼ 0.05 V/K, confirming that the avalanche breakdown mechanism dominates. With ultraviolet illumination at λ ∼ 360 nm, devices with mesa diameters of ∼ 50 μm achieve stable maximum optical gains greater than 1000. To the best of our knowledge, this is the highest optical gain achieved for GaN-based avalanche photodiodes and the largest area III-N avalance photodetectors yet reported.
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85.60.Dw Photodiodes; phototransistors; photoresistors
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