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3 Jul 2006

Volume 89, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 89, 011901 (2006); http://dx.doi.org/10.1063/1.2218670 (3 pages)

L. S. Wang, S. Tripathy, B. Z. Wang, J. H. Teng, S. Y. Chow, and S. J. Chua
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Band gap engineering and stimulated emission of ZnMgO nanowires

Hsu-Cheng Hsu, Chun-Yi Wu, Hsin-Ming Cheng, and Wen-Feng Hsieh

Appl. Phys. Lett. 89, 013101 (2006); http://dx.doi.org/10.1063/1.2218813 (3 pages) | Cited 31 times

Online Publication Date: 5 July 2006

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We report a simple method for fabricating heterostructured ZnMgO nanowires by annealing the preformed ZnO/MgO core-shell structure. Photoluminescence from the alloy nanowires shows strong near-band-edge (NBE) emission, reflecting good material quality. A blueshift of the NBE emission at room temperature after the annealing treatment is attributed to the diffusion of Mg from the shell into the core ZnO of the nanowires to form a ternary ZnMgO alloy. Band gap engineering and stimulated emissions of ZnMgO nanowires with different Mg doping concentrations are also demonstrated.
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73.21.Hb Quantum wires
78.45.+h Stimulated emission
78.55.Et II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals
78.67.Lt Quantum wires

Nonlinear optical susceptibility of deformed achiral carbon nanotubes studied from first-principles calculations

Jian Zhou, Hongming Weng, Gang Wu, and Jinming Dong

Appl. Phys. Lett. 89, 013102 (2006); http://dx.doi.org/10.1063/1.2218814 (3 pages) | Cited 3 times

Online Publication Date: 5 July 2006

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The second harmonic generation (SHG) coefficients of the deformed single-walled carbon nanotubes (SWNTs) have been calculated from the density functional theory in the local density approximation. The obtained results show that their nonlinear responses are very sensitive to the deformation degree and the helicity of the SWNTs, as well as the type of applied strains. More importantly and interestingly, the SHG can be induced in the armchair or zigzag nanotubes under torsional strain, making them promising nonlinear optical materials controllable by applied strains.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Enhanced electron diffusion length of mesoporous TiO2 film by using Nb2O5 energy barrier for dye-sensitized solar cells

Kwang-Soon Ahn, Moon-Sung Kang, Jae-Kwan Lee, Byong-Cheol Shin, and Ji-Won Lee

Appl. Phys. Lett. 89, 013103 (2006); http://dx.doi.org/10.1063/1.2218831 (3 pages) | Cited 55 times

Online Publication Date: 5 July 2006

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Electron diffusion coefficient (D) and electron lifetime (τ) of mesoporous TiO2 films with Nb2O5 energy barrier were investigated by the stepped light-induced transient measurements of photocurrent and photovoltage, compared with that without the Nb2O5. Both the D and τ values were significantly increased with the Nb2O5 energy barrier, resulting in remarkable enhancements of electron diffusion length and optimum thickness of the TiO2 film. As a result, the Nb2O5 energy barrier could provide much more efficient dye-sensitized solar cells by the additional effect of the improved optimum thickness as well as the existing effect at the same TiO2 film thickness.
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73.61.Jc Amorphous semiconductors; glasses
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology
84.60.Jt Photoelectric conversion

Gas bubble phenomenon in nanoscale liquid film under external electric field

Jianbin Luo, Yu He, Min Zhong, and Zhongmin Jin

Appl. Phys. Lett. 89, 013104 (2006); http://dx.doi.org/10.1063/1.2213979 (3 pages) | Cited 7 times

Online Publication Date: 5 July 2006

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The effects of an external electric field on liquid films confined within a nanogap between a smooth plate and a highly polished steel ball have been investigated. It was found that some gas microbubbles emerged around the edge of the Hertz central region and then moved off the central region. Experimental results indicated that the emergence of the bubbles was largely dependent on the liquid polarity and the external voltage. It is thought that the emergence of the bubbles is due to the liquid surface vibration.
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68.15.+e Liquid thin films
68.03.Kn Dynamics (capillary waves)

SiC nanowires: A photocatalytic nanomaterial

Weimin Zhou, Lijun Yan, Ying Wang, and Yafei Zhang

Appl. Phys. Lett. 89, 013105 (2006); http://dx.doi.org/10.1063/1.2219139 (3 pages) | Cited 29 times

Online Publication Date: 5 July 2006

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Single-crystal β-SiC nanowires coated with amorphous SiO2 were synthesized by a simple thermal evaporation technique. The photocatalytic activity of the SiC nanowires was characterized by measuring the photodegradation rate of acetaldehyde catalyzed by SiC as a function of UV irradiation time. It exhibited excellent photocatalytic activity, leading to the efficient decomposition of acetaldehyde by irradiation with UV light. The progress of the photocatalytic reaction can be monitored by the evolution of one of the products, CO2. It has been observed that the as-synthesized SiC nanowires (with the SiO2 coating) have higher catalytic activity than the HF-etched, oxide-free SiC nanowires.
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82.50.Hp Processes caused by visible and UV light
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

I. E. Tyschenko, K. S. Zhuravlev, A. G. Cherkov, V. P. Popov, A. Misiuk, and R. A. Yankov

Appl. Phys. Lett. 89, 013106 (2006); http://dx.doi.org/10.1063/1.2219146 (3 pages) | Cited 4 times

Online Publication Date: 5 July 2006

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Characteristic features of the visible photoluminescence (PL) spectra were studied in silicon-on-insulator (SOI) wafers following high-dose (3×1017 cm−2) ion implantation of hydrogen and annealing at high hydrostatic pressures. The PL behavior of the SOI material was compared with that of hydrogen-implanted bulk Si. Annealing at a pressure above 6 kbars produced a wavelength-selective increase ( ∼ 37 times) in the intensity of the visible PL from the implanted SOI structures. The results are explained in terms of the effect of an optical resonant cavity formed between the air/SOI and the Si/SiO2 interfaces as a result of the high-pressure annealing.
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78.55.Hx Other solid inorganic materials
61.72.Cc Kinetics of defect formation and annealing
61.72.up Other materials

Single-crystal silicon nanoparticles: An instability to check their synthesis

M. Cavarroc, M. Mikikian, G. Perrier, and L. Boufendi

Appl. Phys. Lett. 89, 013107 (2006); http://dx.doi.org/10.1063/1.2219395 (3 pages) | Cited 24 times

Online Publication Date: 5 July 2006

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An instability occuring in electrical signals of the discharge is used as a mark to detect the end of the single-crystal silicon nanoparticle formation in Ar/SiH4 rf plasmas. Scanning electron microscopy and atomic force microscopy studies of depositions show that the exact beginning of the coalescence phase corresponds to the onset of the instability. At the end of the instability, no single-crystal nanoparticles are remaining in the gas phase. These results based on a nonperturbative method allow to control depositions of single-crystal silicon nanoparticles of a well-defined size distribution with the highest density available during dust particle growth.
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81.07.Bc Nanocrystalline materials
81.05.Cy Elemental semiconductors
52.77.Dq Plasma-based ion implantation and deposition
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
52.70.Ds Electric and magnetic measurements
52.27.Lw Dusty or complex plasmas; plasma crystals

Atomically resolved amplitude modulation dynamic force microscopy with a high-frequency and high-quality factor cantilever

Shigeki Kawai and Hideki Kawakatsu

Appl. Phys. Lett. 89, 013108 (2006); http://dx.doi.org/10.1063/1.2219415 (3 pages) | Cited 4 times

Online Publication Date: 5 July 2006

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We demonstrate atomically resolved amplitude modulation ultrahigh vacuum dynamic force microscopy at room temperature. A feasible time response was obtained with 1.8 MHz second resonance frequency of a commercially available silicon cantilever while keeping a high mechanical quality factor. Enhanced detection sensitivity due to small amplitude, high mechanical quality factor, and high resonance frequency enabled imaging of the Si(111)-7×7 surface at the attractive region. Three kinds of atomic contrast were obtained with same imaging parameters. Towards fast imaging, a constant amplitude shift image of 128×128 pixels with atomic resolution was obtained within 4.75 s.
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68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Thermal resistance of the nanoscale constrictions between carbon nanotubes and solid substrates

Hareem Maune, Hsin-Ying Chiu, and Marc Bockrath

Appl. Phys. Lett. 89, 013109 (2006); http://dx.doi.org/10.1063/1.2219095 (3 pages) | Cited 32 times

Online Publication Date: 6 July 2006

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We have determined the thermal resistance for transferring heat between individual single-walled carbon nanotube devices and solid substrates. Using sapphire and comparing our results to previous results obtained from SiO2, we find that the resistance is dominated by interfacial resistance rather than the spreading resistance of heat for diffusing into the substrate. Our results are in agreement to a recent model for the thermal resistance of nanoscale constrictions. Our results suggest that relatively short contact lengths ( ∼ 10–30 nm) to a typical solid should be sufficient to transfer heat efficiently into carbon nanotubes, underscoring the potential of carbon nanotubes for nanoscale thermal management.
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73.63.Fg Nanotubes
73.40.-c Electronic transport in interface structures
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
66.30.-h Diffusion in solids

Atomic force microscopy based, multiphoton, photoelectron emission imaging

E. Spanakis, A. Chimmalgi, E. Stratakis, C. P. Grigoropoulos, C. Fotakis, and P. Tzanetakis

Appl. Phys. Lett. 89, 013110 (2006); http://dx.doi.org/10.1063/1.2219120 (3 pages) | Cited 5 times

Online Publication Date: 6 July 2006

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Images of photoelectron emission from metallic surfaces were obtained with a modified atomic force microscope operating in air. Illumination of the samples was achieved in the near field of a metal-coated microcantilever tip, placed in the beam of a femtosecond pulsed laser that is incident at a grazing angle with respect to the sample surface. Photoelectron currents were measured through the tip with a prototype amplifier. The power law dependence of average photocurrent on light intensity is compatible with multiphoton photoelectric effect and the work function of the metal covering a particular area on the two-metal patterned samples used.
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68.37.Xy Scanning Auger microscopy, photoelectron microscopy
68.37.Ps Atomic force microscopy (AFM)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
79.60.Bm Clean metal, semiconductor, and insulator surfaces
07.79.Lh Atomic force microscopes
73.30.+y Surface double layers, Schottky barriers, and work functions

Nanofiber spraying method using a supplementary electrode

GeunHyung Kim and WanDoo Kim

Appl. Phys. Lett. 89, 013111 (2006); http://dx.doi.org/10.1063/1.2217924 (3 pages) | Cited 8 times

Online Publication Date: 6 July 2006

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Using a supplementary electrode, electrospun poly(ε-carprolactone) fibers were deposited on various substrates with different electrical properties. The ability to coat the substrates was independent of the surface electric resistance of the substrates. This was due to the charge reduction of the sprayed fibers, which resulted from passing through the supplementary electrode. The sprayed fibers might find applications in smart textiles, advanced coating technology, and as biomedical wound dressings.
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81.16.-c Methods of micro- and nanofabrication and processing
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.07.Bc Nanocrystalline materials
81.15.Rs Spray coating techniques

Band structure modulation by carrier doping in random-network carbon nanotube transistors

Shuichi Nakamura, Megumi Ohishi, Masashi Shiraishi, Taishi Takenobu, Yoshihiro Iwasa, and Hiromichi Kataura

Appl. Phys. Lett. 89, 013112 (2006); http://dx.doi.org/10.1063/1.2219389 (3 pages) | Cited 6 times

Online Publication Date: 6 July 2006

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We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices
73.22.-f Electronic structure of nanoscale materials and related systems
71.20.Tx Fullerenes and related materials; intercalation compounds
73.21.Hb Quantum wires
61.72.up Other materials

Carrier dynamics in submonolayer InGaAs/GaAs quantum dots

Zhangcheng Xu, Yating Zhang, Jørn M. Hvam, Jingjun Xu, Xiaoshuang Chen, and Wei Lu

Appl. Phys. Lett. 89, 013113 (2006); http://dx.doi.org/10.1063/1.2219394 (3 pages) | Cited 3 times

Online Publication Date: 6 July 2006

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Carrier dynamics of submonolayer InGaAs/GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveals shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated two-dimensional InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.
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73.63.Kv Quantum dots
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors
73.21.La Quantum dots
78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

In situ electric-field-induced contrast imaging of electronic transport pathways in nanotube-polymer composites

Stephen Jesse, Michael A. Guillorn, Ilia N. Ivanov, Alexander A. Puretzky, Jane Y. Howe, Phillip F. Britt, and David B. Geohegan

Appl. Phys. Lett. 89, 013114 (2006); http://dx.doi.org/10.1063/1.2220058 (3 pages) | Cited 7 times

Online Publication Date: 7 July 2006

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An electric-field-induced contrast mechanism for scanning electron microscopy is reported which permits the visualization of embedded nanomaterials inside various matrices with high contrast and high definition. The high contrast is proposed to result from localized enhancement of secondary electron emission from the nanomaterials due to electric-field-induced changes in their work functions. By utilizing a stage that allows in situ current-voltage measurements inside a scanning electron microscope, single-walled carbon nanotubes embedded within polymethyl methacrylate films were visualized directly. In addition to the rapid assessment of nanotube dispersion within polymers, electric-field-induced contrast imaging enables the determination of percolation pathways. From the contrast in the images, the relative voltage at all points in the electron micrograph can be determined, providing a new mechanism to understand electronic percolation through nanoscale networks.
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73.30.+y Surface double layers, Schottky barriers, and work functions
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
61.41.+e Polymers, elastomers, and plastics
61.46.Fg Nanotubes

White-light-emitting CdSe quantum dots synthesized at room temperature

Rajan Jose, Zhivko Zhelev, Rumiana Bakalova, Yoshinobu Baba, and Mitsuru Ishikawa

Appl. Phys. Lett. 89, 013115 (2006); http://dx.doi.org/10.1063/1.2219510 (3 pages) | Cited 16 times

Online Publication Date: 7 July 2006

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White-light-emitting CdSe quantum dots (QDs) were synthesized at room temperature (RT, ∼ 23 °C) using an organometallic colloidal growth process. These QDs are characterized by high and reproducible quantum yields (ΦPL ∼ 0.4) as well as by unusual spectral broadening [full width at half maximum (FWHM) ∼ 150 nm) despite of their observed size monodispersity. Surface functionalization of these quantum dots using mercaptosuccinic acid made them soluble in water. A change of color together with an enhancement in ΦPL was observed upon surface functionalization.
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81.07.Ta Quantum dots
81.05.Dz II-VI semiconductors
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)

Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films

Chang-Hee Cho, Baek-Hyun Kim, and Seong-Ju Park

Appl. Phys. Lett. 89, 013116 (2006); http://dx.doi.org/10.1063/1.2219722 (3 pages) | Cited 9 times

Online Publication Date: 7 July 2006

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A room-temperature Coulomb blockade effect was observed in silicon quantum dots (Si QDs) spontaneously grown in a silicon nitride film. The metal-insulator-metal device containing the Si QDs showed a clear Coulomb staircase and differential conductance peaks at room temperature. The size distribution of the Si QDs determined by high-resolution transmission electron microscopy suggests that the measured single electron addition energy of 67 meV can be attributed to the charging energy of 63 meV of the Si QDs with the largest diameter of 4.7 nm among the various-sized Si QDs.
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81.07.Ta Quantum dots
81.05.Cy Elemental semiconductors
73.23.Hk Coulomb blockade; single-electron tunneling
73.63.Kv Quantum dots
73.21.La Quantum dots
73.40.Rw Metal-insulator-metal structures

Possible method to determine the two-dimensional to three-dimensional crossover of gold clusters by examining their vibrational modes

Wei Fa and Jinming Dong

Appl. Phys. Lett. 89, 013117 (2006); http://dx.doi.org/10.1063/1.2219724 (3 pages) | Cited 8 times

Online Publication Date: 7 July 2006

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The structural and vibrational properties of AuN (N ⩽ 16) have been studied by the relativistic all-electron density-functional calculations, in which a particular attention is paid to characterize the two-dimensional (2D) to three-dimensional (3D) crossover by their vibrational modes. There exist distinctly different vibrational spectra for the 2D and 3D AuN, which could be used as a fingerprint signal to identify their structures. More interestingly, it is found that each isomer of AuN has its characteristic radial breathing mode, whose frequency shows a remarkable jump at the 2D-3D transition point, thus offering a realizable and powerful experimental tool to determine the 2D-3D crossover size of AuN.
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61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Er Solid metals and alloys

Switching characteristics of coupled quantum wires with tunable coupling strength

A. Ramamoorthy, J. P. Bird, and J. L. Reno

Appl. Phys. Lett. 89, 013118 (2006); http://dx.doi.org/10.1063/1.2219085 (3 pages) | Cited 9 times

Online Publication Date: 7 July 2006

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We explore the switching characteristics of coupled quantum wires with a controllable interwire coupling. We perform extensive experimental and theoretical characterization of the coupling region between the wires, evaluating the local barrier that is formed in this region. With strong coupling between the wires, a nonmonotonic switching of their currents is obtained in a magnetic field, suggestive of quantum interference of electrons in their coupling region.
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73.63.Nm Quantum wires
03.67.Lx Quantum computation architectures and implementations

Highly tunable, high-throughput nanolithography based on strained regioregular conducting polymer films

Alexandra G. Jones, Claudio Balocco, Rosemary King, and Aimin M. Song

Appl. Phys. Lett. 89, 013119 (2006); http://dx.doi.org/10.1063/1.2219094 (3 pages) | Cited 6 times

Online Publication Date: 7 July 2006

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Atomic force microscope (AFM) is now a standard imaging tool in laboratories but has displayed limited capability of nanolithography. We discover that an internal tensile strain exists in poly(3-hexylthiophene-2,5-diyl) (P3HT) films, and the physical effect is utilized to achieve highly tunable and high-throughput nanolithography. Trenches with widths spanning nearly two orders of magnitude from 40 nm to 2.3 μm are fabricated. We show that P3HT is also excellent for pattern transfer to inorganic materials. Furthermore, a lithography speed of 0.5 mm/s is achieved, which is a few orders of magnitude higher than other known methods of AFM-based nanolithography.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.16.Nd Micro- and nanolithography
68.55.A- Nucleation and growth
68.60.Bs Mechanical and acoustical properties
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Scanning and transmission electron microscope images of a suspended single-walled carbon nanotube

Yu. A. Kasumov, I. I. Khodos, M. Kociak, and A. Yu. Kasumov

Appl. Phys. Lett. 89, 013120 (2006); http://dx.doi.org/10.1063/1.2216034 (3 pages) | Cited 5 times

Online Publication Date: 7 July 2006

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For the first time we perform simultaneous observations of individual single-walled carbon nanotubes using scanning electron microscope (SEM) and transmission electron microscope modes of a transmission electron microscope equipped with a scanning attachment operating at 100 kV. We show that in the SEM mode both individual single-walled carbon nanotubes situated on thin Si3N4 membranes and portions of these tubes projecting far beyond the membranes can be observed. The contrast and width of the nanotube images depend on their diameter and density on a substrate. Possible mechanisms of the observed nanotube contrast are discussed.
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61.46.Fg Nanotubes
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
73.22.Lp Collective excitations

Anodic aluminum oxide membrane bonded on a silicon wafer for carbon nanotube field emitter arrays

Hyun Young Jung, Sung Mi Jung, Geun Hoi Gu, and Jung Sang Suh

Appl. Phys. Lett. 89, 013121 (2006); http://dx.doi.org/10.1063/1.2216357 (3 pages) | Cited 11 times

Online Publication Date: 7 July 2006

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We have developed a method to bond a very thin anodic aluminum oxide membrane (400 nm thick) on a Si wafer. Furthermore, we were able to fabricate well-ordered carbon nanotube (CNT) arrays on the membrane at a very high temperature—above 1000 °C—without deformation. The CNT arrays fabricated at 800 °C exhibited long-term stability and uniform emission. Their current density was higher than 1 mA/cm2; such a density might be required for flat panel displays. When the tip of the CNTs was modified from an open shape to a closed shape by exposure to acetylene gas, the turn-on voltage decreased significantly and the enhancement factor increased significantly.
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85.45.Db Field emitters and arrays, cold electron emitters
85.35.Kt Nanotube devices
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