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Applied Physics Letters / Volume 89 / Issue 2 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 89, 022508 (2006); http://dx.doi.org/10.1063/1.2221881 (3 pages)

Room temperature ferromagnetism in two-step-prepared Co-doped ZnO bulks

T. Zhu1, W. S. Zhan1, W. G. Wang2, and John Q. Xiao2

1State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China
2Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716

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(Received 26 February 2006; accepted 10 June 2006; published online 14 July 2006)

We have prepared Co-doped ZnO bulks with a two-step method. The bulk samples are sintered at the temperature above 1000 °C to get pure single phase and then treated by Zn vapor in a vacuum. Based on such two-step preparation, clear carrier induced ferromagnetism is found in Zn treated Co-doped ZnO bulks, which suggests that the magnetism mechanism can be of codoping effect. The onset of ferromagnetism is associated with the further increase of the hybridization of the impurity band with 3d states near the Fermi level when additional carrier induced to let the Stoner criterion for ferromagnetism to be satisfied.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

cobalt, zinc compounds, ferromagnetic materials, II-VI semiconductors, wide band gap semiconductors, semimagnetic semiconductors, semiconductor doping, sintering, impurity states, Fermi level, band structure

PACS

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 75.50.Pp

    Magnetic semiconductors

  • 61.72.uj

    III-V and II-VI semiconductors

  • 81.20.Ev

    Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

  • 71.55.Gs

    II-VI semiconductors

  • 71.20.Nr

    Semiconductor compounds

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2221881

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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