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Applied Physics Letters / Volume 89 / Issue 20 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 89, 202101 (2006); http://dx.doi.org/10.1063/1.2388049 (3 pages)

InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

J. H. Lee, Zh. M. Wang, N. W. Strom, Yu. I. Mazur, and G. J. Salamo

Physics Department, University of Arkansas, Fayetteville, Arkansas 72701

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(Received 24 July 2006; accepted 29 August 2006; published online 13 November 2006)

Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, self-assembly, molecular beam epitaxial growth, monolayers, surface morphology, photoluminescence, atomic force microscopy

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2388049

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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