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Applied Physics Letters / Volume 89 / Issue 20 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 89, 202102 (2006); http://dx.doi.org/10.1063/1.2388254 (3 pages)

p-type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering

Peng Wang, Nuofu Chen, Zhigang Yin, Ruixuan Dai, and Yiming Bai

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China

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(Received 31 August 2006; accepted 7 October 2006; published online 13 November 2006)

Sb-doped Zn1−xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 ⩽ x ⩽ 0.13) was confirmed by Hall measurements, revealing a hole concentration of 1015–1016 cm−3 and a mobility of 0.6–4.5 cm2/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1−xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

antimony, magnesium compounds, zinc compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor thin films, sputtered coatings, Hall effect, hole density, hole mobility, p-n junctions, energy gap

PACS

  • 81.05.Dz

    II-VI semiconductors

  • 73.61.Ga

    II-VI semiconductors

  • 68.55.A-

    Nucleation and growth

  • 81.15.Cd

    Deposition by sputtering

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2388254

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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