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4 Dec 2006

Volume 89, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 233120 (2006); http://dx.doi.org/10.1063/1.2402115 (3 pages)

S. Yeo, Y. Horibe, S. Mori, C. M. Tseng, C. H. Chen, A. G. Khachaturyan, C. L. Zhang, and S.-W. Cheong
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Efficient blue electroluminescence from neutral alcohol-soluble polyfluorenes with aluminum cathode

Gang Zhou, Yanhou Geng, Yanxiang Cheng, Zhiyuan Xie, Lixiang Wang, Xiabin Jing, and Fosong Wang

Appl. Phys. Lett. 89, 233501 (2006); http://dx.doi.org/10.1063/1.2399443 (3 pages) | Cited 16 times

Online Publication Date: 4 December 2006

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Efficient blue polymer light-emitting diodes (PLEDs) have been fabricated with a neutral alcohol-soluble polyfluorene, i.e., poly(9,9-bis(6′-diethoxylphosphorylhexyl)fluorene) (PF-EP), as the emitting layer, high work-function Al as the cathode, and poly(vinyl carbazole) as the hole-transporting layer. The PLEDs display a maximum luminous efficiency of 4.0 cd/A and the luminous efficiency >2.4 cd/A in a wide range of current densities. It is found that the promising performance of the devices is attributed to the fact that the PF-EP is not only an efficient blue light-emitting polymer, but it also can facilitate efficient electron injection at the Al/PF-EP interface.
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85.60.Jb Light-emitting devices

Enhanced optical field intensity distribution in organic photovoltaic devices using external coatings

Brendan O’Connor, Kwang H. An, Kevin P. Pipe, Yiying Zhao, and Max Shtein

Appl. Phys. Lett. 89, 233502 (2006); http://dx.doi.org/10.1063/1.2399937 (3 pages) | Cited 32 times

Online Publication Date: 4 December 2006

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An external dielectric coating is shown to enhance energy conversion in an organic photovoltaic cell with metal anode and cathode by increasing the optical field intensity in the organic layers. Improved light incoupling in the device is modeled using transfer matrix simulations and is confirmed by in situ measurement of the photocurrent during growth of the coating. The optical field intensity in optimized cell geometries is predicted to exceed that in analogous devices using indium tin oxide, both cell types having equivalent anode sheet resistance, suggesting a broader range of compatible substrates (e.g., metal foils) and device processing techniques.
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85.60.Bt Optoelectronic device characterization, design, and modeling

Improvement of the electrical performance in metal-induced laterally crystallized polycrystalline silicon thin-film transistors by crystal filtering

Min-Sun Kim, Nam-Kyu Song, Shin-Hee Han, Seung-Ki Joo, and Jang-Sik Lee

Appl. Phys. Lett. 89, 233503 (2006); http://dx.doi.org/10.1063/1.2400108 (3 pages) | Cited 5 times

Online Publication Date: 4 December 2006

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The electrical performance of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is greatly affected by the microstructure of the poly-Si. The crystal filtering method is employed to improve the electrical properties of poly-Si TFTs using metal-induced lateral crystallization by the ordering of Si grains. Experimental results indicated that the field-effect mobility of TFTs having crystal filtered poly-Si is more than 2.5 times higher than that of conventional poly-Si TFTs. It is found that the ordered microstructure is one of the key parameters to improve the electrical performance in poly-Si TFTs.
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85.30.Tv Field effect devices

Generalized cascaded model to assess noise transfer in scintillator-based x-ray imaging detectors

Ho Kyung Kim

Appl. Phys. Lett. 89, 233504 (2006); http://dx.doi.org/10.1063/1.2398926 (3 pages) | Cited 9 times

Online Publication Date: 5 December 2006

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For a scintillator-based x-ray imaging detector, the conventional cascaded model is generalized to describe the direct x-ray induced quantum noise. The direct x rays are those that are unattenuated from a scintillator and that directly interact with photosensitive elements. The developed model is applied for an analysis of a photodiode array in conjunction with a phosphor screen and shows a good agreement with the measured noise-power spectrum.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
29.40.Mc Scintillation detectors
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
85.60.Dw Photodiodes; phototransistors; photoresistors

High-spatial-resolution Raman microscopy of stress in shallow-trench-isolated Si structures

Vladimir Poborchii, Tetsuya Tada, and Toshihiko Kanayama

Appl. Phys. Lett. 89, 233505 (2006); http://dx.doi.org/10.1063/1.2400057 (3 pages) | Cited 16 times

Online Publication Date: 5 December 2006

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Stress in single and periodic shallow-trench-isolated Si structures was examined by 364 nm excitation confocal resonance Raman microscopy, laser penetration being restricted to the near-surface region. Using a 1.3 numerical aperture microobjective lens with a theoretical ∼ 140 nm spatial resolution, the authors show that the configuration with both incident and scattered lights polarized parallel to each other and perpendicular to Si stripes is favorable for stress detection in the middle of the stripes, suppressing contributions from their edges. The stresses located in different areas of the structures were identified and analyzed.
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78.30.Am Elemental semiconductors and insulators
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Red to near-infrared electrophosphorescence from a platinum complex coordinated with 8-hydroxyquinoline

Chang-Jian Yang, Chun Yi, Min Xu, Jiang-Huai Wang, Yan-Zhu Liu, Xi-Cun Gao, and Ji-Wu Fu

Appl. Phys. Lett. 89, 233506 (2006); http://dx.doi.org/10.1063/1.2400395 (3 pages) | Cited 12 times

Online Publication Date: 5 December 2006

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A platinum complex coordinated with 2-phenylpyridine and 8-hydroxyquinoline [(phpy)Pt(q)] was synthesized. When (phpy)Pt(q) was used as a guest emitting material in the electrophosphorescent devices, the emission starts at ∼ 600 nm extending to the near-infrared region. The device with 40 nm emitting layer of (phpy)Pt(q) doped into N, N′-dicarbazolyl-4, 4′-biphenyl (CBP) exhibits higher luminance and efficiency compared to the device with a layer of 20 nm (phpy)Pt(q) doped into CBP combined with a layer of 20 nm (phpy)Pt(q) doped into aluminum 8-hydroxyquinoline (Alq3) or a layer of 40 nm (phpy)Pt(q) doped into Alq3.
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78.55.Hx Other solid inorganic materials
85.60.Jb Light-emitting devices

Time-related conversion of the carbon nanotube field effect transistor

Wenjing Zhang, Qifeng Zhang, and Jinlei Wu

Appl. Phys. Lett. 89, 233507 (2006); http://dx.doi.org/10.1063/1.2402218 (3 pages) | Cited 2 times

Online Publication Date: 6 December 2006

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Multiwall carbon nanotube field effect transistors were fabricated by using Al contact electrodes. As time went by, the conversion of the device from n type to p type was observed, and the Schottky barrier for hole transport at the interface of Al/carbon nanotube decreased when the work function of the electrode increased. Experimental results support the opinion that the Fermi level of the metal moves from near the conduction band edge of the nanotube to the valence band edge. The result is attributed to the oxidation of Al electrodes. It is very helpful to understand the role of oxygen to improve the carbon the nanotube field effect transistor characteristics.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices

Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates

V. I. Sankin, P. P. Shkrebiy, and R. Yakimova

Appl. Phys. Lett. 89, 233508 (2006); http://dx.doi.org/10.1063/1.2402207 (3 pages)

Online Publication Date: 7 December 2006

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4H-SiC p+-n−-n+ junctions have been prepared on 8° off oriented plane aiming to investigate conditions of Wannier-Stark localization (WSL), and respectively the occurrence of a negative temperature coefficient of avalanche breakdown voltage (TCABV). A method is proposed that can enable obtaining important results without reaching the regime of destructive avalanche breakdown. By analyzing the photocurrent of light with different wavelengths and at strong electric fields, a negative differential photoconductance has been discovered testifying that the WSL is not suppressed at the field inclination in 8° off axis, and a negative TCABV is expected in commercial p-n junctions.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.63.-b Electronic transport in nanoscale materials and structures
78.20.Jq Electro-optical effects
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
72.40.+w Photoconduction and photovoltaic effects
72.20.Ht High-field and nonlinear effects

Electrical characteristics of flexible organic static induction transistors under bending conditions

Yasuyuki Watanabe, Hiroyuki Iechi, and Kazuhiro Kudo

Appl. Phys. Lett. 89, 233509 (2006); http://dx.doi.org/10.1063/1.2402210 (3 pages) | Cited 7 times

Online Publication Date: 7 December 2006

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Organic static induction transistors (OSITs) with vertical channel structures that operate at low voltages have potential as components of portable or ubiquitous devices. In this study, the static characteristics of pentacene OSITs on flexible substrates were examined under bending conditions. Bending tests of the flexible substrate were carried out under various compressive and tensile strains and at various bending radii. The results demonstrate that OSITs exhibit stable electrical characteristics at compressive and tensile strains up to a bending radius of 5 mm, suggesting a possible application as transistors in the field of flexible electronics.
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85.30.Tv Field effect devices
81.70.Bt Mechanical testing, impact tests, static and dynamic loads

Determination of aggregates as charge trapping and recombination centers in poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] by time-resolved electroluminescence spectroscopy

Hao-En Tseng, Ching-Yang Liu, and Show-An Chen

Appl. Phys. Lett. 89, 233510 (2006); http://dx.doi.org/10.1063/1.2402228 (3 pages) | Cited 3 times

Online Publication Date: 7 December 2006

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A presence of aggregates can give critical influences on photophysical properties of conjugated polymer. For poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene], the authors found that the aggregates can serve as charge traps and recombination centers by using time-resolved electroluminescence spectroscopy, and that the emissions from isolated chains and aggregates show different dynamics. The authors also found that the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of aggregates lie within the band gap of isolated chains. Thus, the aggregates act as shallow traps for both electron and hole so that a reexcitation to HOMO and LUMO of isolated chains is possible.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Rv Polymers and organic compounds
78.47.-p Spectroscopy of solid state dynamics
78.60.Fi Electroluminescence

Broad wavelength modulating and design of organic white diode based on lighting by using exciplex emission from mixed acceptors

D. Wang, W. L. Li, Z. S. Su, T. L. Li, B. Chu, D. F. Bi, L. L. Chen, W. M. Su, and H. He

Appl. Phys. Lett. 89, 233511 (2006); http://dx.doi.org/10.1063/1.2402879 (3 pages) | Cited 11 times

Online Publication Date: 7 December 2006

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Modulating electroluminescent (EL) spectra from interfacial exciplex emissions were observed by varying the ratios of two acceptors of exciplex-type devices in which the emissive wavelengths were tuned from 530 to 656 nm. In the devices 4,4′,4″-tris[3-methyl-pheny(phenyl)amino]triphenylamine and (bathocuproine: scdolinium-(dibenzoyl-methane)3bathophenyl-phenathroline) mixtures were used as donor and acceptor materials, respectively. In terms of the exciplex broad band emission a white organic light emitting diode was demonstrated by skillfully designing the structure when blue subband was subjoined in the white spectrum. The white device behaves the Commission Internationale de l’Eclairage coordinates of (0.32, 0.35) with higher color stability at various biases, a color rendering index of 90.4, and a maximum luminance of 425 cd/m2, respectively, although the EL efficiency needs to be further improved. The emission mechanism of the broad exciplex band formed by two mixed acceptors was also discussed.
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85.60.Jb Light-emitting devices

Pentacene field-effect transistors with a laminated Mylar™ foil as gate dielectric

Karim Diallo, Mohsen Erouel, and Jacques Tardy

Appl. Phys. Lett. 89, 233512 (2006); http://dx.doi.org/10.1063/1.2402901 (3 pages) | Cited 3 times

Online Publication Date: 7 December 2006

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This work reports on pentacene based organic field-effect transistors with a gate dielectric made of a thin foil of Mylar™ transferred by a lamination process at moderate temperature. The process described here enabled the process of both bottom and top gate transistors, thus demonstrating the feasibility of laminating a dielectric film onto an organic semiconductor. Furthermore the authors point out the importance of the organic/insulator interface through the beneficial deposition of polymethyl methacrylate layer on the Mylar before evaporation of the pentacene layer in the case of bottom gate devices. A comparison is given with devices having a spun on organic dielectric.
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85.30.Tv Field effect devices

Self-assembled monolayer-modified Ag anode for top-emitting polymer light-emitting diodes

Lai-Wan Chong, Yuh-Lang Lee, Ten-Chin Wen, and Tzung-Fang Guo

Appl. Phys. Lett. 89, 233513 (2006); http://dx.doi.org/10.1063/1.2404589 (3 pages) | Cited 10 times

Online Publication Date: 7 December 2006

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A self-assembled monolayer (SAM), 4-fluorothiophenol (4-FTP), is employed to modify the Ag anode of a top-emitting polymer light-emitting diode (T-PLED) to enhance the hole injection and the performance of a T-PLED device. The results show that the reflectivity of the Ag anode does not decrease due to the formation of a SAM. A brightness of 68 981 cd/m2 and a luminous efficiency of 10.3 cd/A have been achieved for the 4-FTP-modified device. The improved performance is attributed to the work function increase of the Ag/4-FTP anode due to the presence of fluorine atoms at the outer surface of the modified anode.
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85.60.Jb Light-emitting devices

Metal-insulator-semiconductor structure on low-temperature grown GaAs

A. Chen, M. Young, W. Li, T. P. Ma, and J. M. Woodall

Appl. Phys. Lett. 89, 233514 (2006); http://dx.doi.org/10.1063/1.2404605 (3 pages) | Cited 3 times

Online Publication Date: 7 December 2006

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The metal-insulator-semiconductor (MIS) capacitors on low-temperature grown (LTG) GaAs were made using the jet-vapor-deposition (JVD) silicon nitride as the gate dielectrics. The unpinned JVD-SiN/LTG-GaAs interface was shown by the capacitance-voltage characterization. The observed Fermi level “pinning” in the unannealed samples was caused by the bulk point defects in LTG GaAs. Annealing reduced the bulk defect density in LTG GaAs and revealed the intrinsically unpinned Fermi level at the interface. The result is consistent with the expected unpinning of LTG GaAs surface, and JVD SiN appears to play a critical role to enable this unpinned interface. JVD SiN showed low leakage current ( ∼ 10 nA/cm2 at 2 MV/cm) and high breakdown electric field ( ∼ 9.8 MV/cm), promising for MIS device applications.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing

Dynamical diffraction peak splitting in time-of-flight neutron diffraction

E. Üstündag, R. A. Karnesky, M. R. Daymond, and I. C. Noyan

Appl. Phys. Lett. 89, 233515 (2006); http://dx.doi.org/10.1063/1.2402220 (3 pages)

Online Publication Date: 8 December 2006

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Time-of-flight neutron diffraction data from 20 and 0.7 mm thick perfect Si single crystal samples, which exhibit dynamical diffraction effects associated with finite crystal size, are presented. This effect is caused by constructive interference occurring solely from thin layers bounded by the front (entry) and back (exit) surfaces of the sample with no scattering originating from the layers in between, resulting in two distinct peaks observed for each reflection. If the sample is thin and/or the instrument resolution is insufficient, these two peaks can convolve and cause peak shape aberrations which can lead to significant errors in the strain and peak-broadening parameters obtained from a kinematical diffraction analysis.
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61.05.fm Neutron diffraction

Integrated organic photovoltaic modules with a scalable voltage output

S. Yoo, W. J. Potscavage, B. Domercq, J. Kim, J. Holt, and B. Kippelen

Appl. Phys. Lett. 89, 233516 (2006); http://dx.doi.org/10.1063/1.2402264 (3 pages) | Cited 10 times

Online Publication Date: 8 December 2006

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Efficient organic photovoltaic modules and cells have been fabricated based on a blend of poly(3-hexylthiophene) (P3HT) and a soluble C70 derivative, [6,6]-phenyl C71 butyric acid methyl ester (PCBM-70). Power conversion efficiency of P3HT/PCBM-70 cells is estimated at 4.1% for the AM1.5 G condition from the spectra of external quantum efficiency. Integrated photovoltaic modules, in which N- individual P3HT/PCBM-70 cells (N = 1–4) are connected in series, exhibit a short-circuit current ISC of 1.4±0.1 mA and an open-circuit voltage VOC of N×0.621 V with a maximum VOC of 2.48 V for N = 4 under simulated solar illumination (AM1.5 G, 85 mW/cm2).
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84.60.Jt Photoelectric conversion
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Highly efficient inverted organic photovoltaics using solution based titanium oxide as electron selective contact

C. Waldauf, M. Morana, P. Denk, P. Schilinsky, K. Coakley, S. A. Choulis, and C. J. Brabec

Appl. Phys. Lett. 89, 233517 (2006); http://dx.doi.org/10.1063/1.2402890 (3 pages) | Cited 195 times

Online Publication Date: 8 December 2006

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The challenge to reversing the layer sequence of organic photovoltaics (OPVs) is to prepare a selective contact bottom cathode and to achieve a suitable morphology for carrier collection in the inverted structure. The authors report the creation of an efficient electron selective bottom contact based on a solution-processed titanium oxide interfacial layer on the top of indium tin oxide. The use of o-xylene as a solvent creates an efficient carrier collection network with little vertical phase segregation, providing sufficient performance for both regular and inverted solar cells. The authors demonstrate inverted layer sequence OPVs with AM 1.5 calibrated power conversion efficiencies of over 3%.
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84.60.Jt Photoelectric conversion

Arrays of vacuum microdiodes using uniform diamondlike-carbon tip apexes

J. C. She, H. Hao, N. S. Xu, S. Z. Deng, J. Chen, S. E. Huq, and L. Wang

Appl. Phys. Lett. 89, 233518 (2006); http://dx.doi.org/10.1063/1.2402940 (3 pages) | Cited 3 times

Online Publication Date: 8 December 2006

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The authors report the fabrication and characterization of vacuum microdiode arrays using Si microtip with uniform diamondlike-carbon (DLC) apexes. The technique is based on the mass production procedure of integrated circuit devices. The typical turn-on voltage of the microdiode arrays is 50 V, and it can provide emission current density up to 0.24 A/cm2 at 210 V. The developed diodes with coated apexes considerably surpass the diodes with virgin Si tip (98 V/0.058 A/cm2) in their performance. Thus, the microdiode with DLC coatings on Si tip apexes are attractive for applications in charge neutralizers and microwave amplifiers. The underlying physics responsible for the device operation is discussed.
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85.45.Bz Vacuum microelectronic device characterization, design, and modeling

Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors

D. L. Smith and P. P. Ruden

Appl. Phys. Lett. 89, 233519 (2006); http://dx.doi.org/10.1063/1.2402942 (3 pages) | Cited 10 times

Online Publication Date: 8 December 2006

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Recent experiments have demonstrated ambipolar channel conduction and light emission in conjugated polymer field-effect transistors (FETs). Electrons and holes are injected from metal source and drain contacts with different work functions, propagate through the FET channel, and recombine emitting light. The position of maximum light emission is varied by changing the voltages applied to the transistor terminals. Here, we present an analytic device model for ambipolar organic field-effect transistors, based on the gradual channel approximation. Trapping of the injected carriers is found to be important. The model results are in good agreement with the experimental observations.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
85.60.Jb Light-emitting devices

Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

H. P. Yu, K. L. Pey, W. K. Choi, D. A. Antoniadis, E. A. Fitzgerald, D. Z. Chi, and C. H. Tung

Appl. Phys. Lett. 89, 233520 (2006); http://dx.doi.org/10.1063/1.2402943 (3 pages) | Cited 3 times

Online Publication Date: 8 December 2006

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The authors propose to tune the nickel (Ni) fully silicided (FUSI) metal gate work function via an yttrium/Si/Ni gate stack structure. The work function of such structure indicates that the Y interlayer can effectively tune the Ni FUSI work function from the midgap to the conduction band edge of silicon by controlling the interlayer thickness. The gate stack work function starts to saturate to the pure yttrium value when the yttrium interlayer is >1.6 nm. This indicates that the chemical potential of the material adjacent to gate electrode/gate insulator plays an important role in the determination of the work function.
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85.30.Tv Field effect devices
73.20.At Surface states, band structure, electron density of states
65.40.G- Other thermodynamical quantities
73.30.+y Surface double layers, Schottky barriers, and work functions

Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

Paddy K. L. Chan, Kevin P. Pipe, Guoxuan Qin, and Zhenqiang Ma

Appl. Phys. Lett. 89, 233521 (2006); http://dx.doi.org/10.1063/1.2402947 (3 pages) | Cited 4 times

Online Publication Date: 8 December 2006

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By generating high resolution two dimensional temperature images of electronic devices and linking heat dissipation to electrical current, the authors demonstrate that thermoreflectance measurements employing a charge-coupled device can provide a useful and nondestructive method for profiling current density in electronic devices. Here they apply this method to high power SiGe heterojunction bipolar transistors (HBTs) integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation. They show that current hogging for a HBT with two emitter subcells can lead to one subcell carrying 81% of the total current.
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85.30.Pq Bipolar transistors
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