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4 Dec 2006

Volume 89, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 233120 (2006); http://dx.doi.org/10.1063/1.2402115 (3 pages)

S. Yeo, Y. Horibe, S. Mori, C. M. Tseng, C. H. Chen, A. G. Khachaturyan, C. L. Zhang, and S.-W. Cheong
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Ferromagnetic interlayer exchange coupling in semiconductor SbCrTe/Sb2Te3/SbCrTe trilayer structures

Zhenhua Zhou, Yi-Jiunn Chien, and Ctirad Uher

Appl. Phys. Lett. 89, 232501 (2006); http://dx.doi.org/10.1063/1.2398905 (3 pages) | Cited 2 times

Online Publication Date: 4 December 2006

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Semiconductor trilayer structures with ferromagnetic Sb2−xCrxTe3 layers separated by a nonmagnetic Sb2Te3 layer of different thickness have been fabricated by molecular beam epitaxy. Ferromagnetic out-of-plane exchange coupling between the SbCrTe layers was found and the coupling strength, which can be represented by a saturation field HS, depends on both the Sb2Te3 spacer thickness and temperature.
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75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions

Spin-polarized tunneling in metal-insulator-semiconductor Fe/ZnSe/Ga1−xMnxAs magnetic tunnel diodes

H. Saito, S. Yuasa, K. Ando, Y. Hamada, and Y. Suzuki

Appl. Phys. Lett. 89, 232502 (2006); http://dx.doi.org/10.1063/1.2399364 (3 pages) | Cited 10 times

Online Publication Date: 4 December 2006

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The authors fabricated a metal-insulator-semiconductor (M/I/SC) structure Fe/ZnSe/Ga1−xMnxAs and observed magnetoresistance (MR) ratios up to 40%. The dependence of differential conductivity on bias voltage exhibited pronounced asymmetry characteristic of a M/I/p-SC tunnel diode reflecting the characteristic band structure of Ga1−xMnxAs. The bias voltage (Vhalf), where the MR ratio becomes half the zero-bias value, reached 460 mV, which is the highest value yet reported in M/I/Ga1−xMnxAs magnetic tunnel junctions (Vhalf<100 mV). This large Vhalf and the use of a conventional 3d-ferromagnetic metal is an important first step in giving nonvolatile functionality to the established high-current gain tunnel transistors.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.25.Dc Spin polarized transport in semiconductors
75.50.Pp Magnetic semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
85.30.Kk Junction diodes

Giant moment and magnetic anisotropy in Co-doped ZnO films grown by pulse-injection metal organic chemical vapor deposition

Anna Zukova, Arunas Teiserskis, Sebastiaan van Dijken, Y. K. Gun’ko, and V. Kazlauskiene

Appl. Phys. Lett. 89, 232503 (2006); http://dx.doi.org/10.1063/1.2399939 (3 pages) | Cited 13 times

Online Publication Date: 4 December 2006

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We report on large magnetic moments of up to 18.9μB/Co in Co-doped ZnO films grown by pulse-injection metal organic chemical vapor deposition. The magnetic moment saturates easily in perpendicular magnetic fields and is considerably reduced when the magnetic field is applied parallel to the film plane. The saturation moment is largest for a small Co doping concentration of 1% and persists up to a temperature well above 900 K. These extraordinary magnetic attributes cannot be explained by the spin-only moment of Co2+ ions or Co cluster, but suggest the formation of orbital states in a defect-related impurity band.
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81.05.Dz II-VI semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Gw Magnetic anisotropy
75.50.Pp Magnetic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Preparation, microstructure, and magnetic properties of bulk nanocrystalline Gd metal

M. Yue, J. X. Zhang, H. Zeng, and K. J. Wang

Appl. Phys. Lett. 89, 232504 (2006); http://dx.doi.org/10.1063/1.2400079 (3 pages) | Cited 7 times

Online Publication Date: 5 December 2006

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Bulk nanocrystalline gadolinium metal was prepared using spark plasma sintering (SPS) and subsequent annealing process. The SPS Gd metal had a single phase with a mean grain size of about 10 nm. A pressure-induced C-axis crystal texture was found in the SPS Gd sample. With the decrease of Gd grains from micrometer to nanometer range, the Curie temperature TC decreased by 10.7 K and the magnetic moment per Gd atom at 5 K dropped noticeably from 7.81μB to 6.31μB. These results indicate the remarkable influence of the nanostructure on the magnetism of Gd due to the finite size effect.
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75.50.Tt Fine-particle systems; nanocrystalline materials
81.07.De Nanotubes
61.46.Hk Nanocrystals
52.77.Dq Plasma-based ion implantation and deposition
81.40.Gh Other heat and thermomechanical treatments
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Arrays of high-Tc Josephson junctions in open millimeter wave resonators

A. M. Klushin, M. He, S. L. Yan, and N. Klein

Appl. Phys. Lett. 89, 232505 (2006); http://dx.doi.org/10.1063/1.2400401 (3 pages) | Cited 10 times

Online Publication Date: 5 December 2006

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The authors have explored the coupling mechanism of a millimeter wave radiation to bicrystal Josephson junction arrays embedded in a hemispherical Fabry-Pérot resonator. The authors have found that their high-temperature superconductor array can be modeled as a thin film grid polarizer. In agreement with this model, a strong dependence of the coupling of the Josephson junctions on the polarization of the electric filed in the resonator was observed. The authors achieved a maximum Josephson voltage of 28 mV for an array of 182 bicrystal junctions at a temperature of 75 K and a frequency of 74.4 GHz.
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74.50.+r Tunneling phenomena; Josephson effects
74.81.Fa Josephson junction arrays and wire networks
85.25.Cp Josephson devices

Thickness-dependent magnetic domain change in epitaxial MnAs films on GaAs(001)

Kwang-Su Ryu, JinBae Kim, YoungPak Lee, Hiro Akinaga, Takashi Manago, Ravindranath Viswan, and Sung-Chul Shin

Appl. Phys. Lett. 89, 232506 (2006); http://dx.doi.org/10.1063/1.2402235 (3 pages) | Cited 8 times

Online Publication Date: 6 December 2006

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The authors report the change of the magnetic domain structure, dependent on the film thickness of MnAs films epitaxially grown on GaAs(001), investigated by magnetic force microscopy. Interestingly, as the film thickness decreases, the domain structure within the ferromagnetic α-MnAs stripes changes from a head-on domain structure to a simple 180° one around a thickness of 250 nm. This result is understood by the change in the demagnetizing factor of the ferromagnetic stripes with the film thickness.
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75.70.Ak Magnetic properties of monolayers and thin films
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ch Domain walls and domain structure
75.50.Dd Nonmetallic ferromagnetic materials

Magnetization reversal, asymmetry, and role of uncompensated spins in perpendicular exchange coupled systems

J. Camarero, J. Miguel, J. B. Goedkoop, J. Vogel, F. Romanens, S. Pizzini, F. Garcia, J. Sort, B. Dieny, and N. B. Brookes

Appl. Phys. Lett. 89, 232507 (2006); http://dx.doi.org/10.1063/1.2402882 (3 pages) | Cited 8 times

Online Publication Date: 6 December 2006

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Soft x-ray resonant magnetic scattering has been used to investigate the element-selective microscopic magnetization reversal behavior of room temperature perpendicular exchange coupled ferromagnetic∕antiferromagnetic (F∕AF) systems and to study the role of the interfacial coupling strength on it. Different nucleation processes and domain size distributions along the decreasing and increasing branches of the reversal have been found. The size of the magnetic domains during reversal depends on both the F anisotropy and F∕AF coupling strength, decreasing when one of them increases. Evidence of the exchange bias (coercivity enhancement) being induced by pinned (unpinned) uncompensated AF interfacial spins is also shown.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.75.-c Magnetic properties of nanostructures
75.60.Jk Magnetization reversal mechanisms
75.30.Et Exchange and superexchange interactions
75.60.Ch Domain walls and domain structure
75.30.Gw Magnetic anisotropy

Fabrication and magnetic properties of Fe/Pt multilayered nanowires

Huixin Wang, Yu Cheng Wu, Lide Zhang, and Xiaoye Hu

Appl. Phys. Lett. 89, 232508 (2006); http://dx.doi.org/10.1063/1.2402888 (3 pages) | Cited 8 times

Online Publication Date: 6 December 2006

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Fe/Pt multilayered nanowires with well-defined interfaces and layer thicknesses were fabricated by a pulse-plating technique in nanoporous anodic alumina templates. The structure, surface morphology, and magnetic properties of the multilayered nanowire arrays have been characterized by x-ray diffractometer, field emission scanning electron microscope, transmission electron microscopy, and superconducting quantum interference device magnetometer. It is found that after being annealed at temperatures of 300 °C, FePt ordered phase with high magnetic anisotropy is formed. This can be explained by rapid diffusion at Fe/Pt interface.
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68.65.Ac Multilayers
68.65.La Quantum wires (patterned in quantum wells)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Gw Magnetic anisotropy
81.40.Gh Other heat and thermomechanical treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation

Magnetic and superconducting properties of single crystals of Sr2HoRu1−xCuxO6 grown from high temperature solutions

S. M. Rao, K. J. Wang, N. Y. Yen, Y. Y. Chen, C. B. Tsai, S. Neeleshwar, M. K. Wu, J. K. Srivastava, M. C. Ling, H. L. Liu, and D. C. Ling

Appl. Phys. Lett. 89, 232509 (2006); http://dx.doi.org/10.1063/1.2402902 (3 pages) | Cited 3 times

Online Publication Date: 6 December 2006

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Single crystals of Sr2HoRu1−xCuxO6 (with x = 0–0.2), measuring 2–3 mm across have been grown from PbO–PbF2 based solutions in the temperature range of 1250–1150 °C. The crystals exhibit octahedral morphology and belong to the monoclinic space group P21/n. While Sr2HoRuO6 is found to be antiferromagnetic with weak ferromagnetism below 30 K, the solid solutions containing Cu exhibit a diamagnetic transition at 31 K which increases in magnitude and temperature with increasing Cu. Through a correlation of magnetic and calorimetric properties, these crystals are concluded to be spin-glass superconductors.
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74.25.Ha Magnetic properties including vortex structures and related phenomena
74.72.-h Cuprate superconductors
75.50.Lk Spin glasses and other random magnets
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

J. Hayakawa, S. Ikeda, Y. M. Lee, F. Matsukura, and H. Ohno

Appl. Phys. Lett. 89, 232510 (2006); http://dx.doi.org/10.1063/1.2402904 (3 pages) | Cited 73 times

Online Publication Date: 6 December 2006

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The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin-valve (PSV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450 °C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450 °C. Energy dispersive x-ray analysis shows that annealing at 450 °C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed.
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75.47.De Giant magnetoresistance
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.40.Ns Metal-nonmetal contacts
68.35.Fx Diffusion; interface formation
81.40.Gh Other heat and thermomechanical treatments

Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions

Moo-Seong Kim, Yi-Kai Zhou, Masayuki Funakoshi, Shuichi Emura, Shigehiko Hasegawa, and Hajime Asahi

Appl. Phys. Lett. 89, 232511 (2006); http://dx.doi.org/10.1063/1.2403188 (3 pages) | Cited 4 times

Online Publication Date: 7 December 2006

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GaCrN/AlN/GaCrN trilayer structures with different Cr concentrations were grown by molecular-beam epitaxy. Well-defined hysteresis loop was observed in the magnetization versus magnetic field curves even at room temperature. By the current versus voltage characteristics it is confirmed that the AlN layer behaves as a tunnel barrier with an estimated barrier height of 2.1 eV in the GaCrN/AlN/GaCrN structures. For these trilayer tunnel junction diodes, clear hysteresis characteristics were observed in the resistance versus magnetic field curves at 77 K when the current flow and the applied magnetic field were perpendicular to and parallel to the junction plane, respectively.
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75.50.Pp Magnetic semiconductors
75.47.Pq Other materials
72.20.My Galvanomagnetic and other magnetotransport effects
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
75.50.Dd Nonmetallic ferromagnetic materials
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