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4 Dec 2006

Volume 89, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 233120 (2006); http://dx.doi.org/10.1063/1.2402115 (3 pages)

S. Yeo, Y. Horibe, S. Mori, C. M. Tseng, C. H. Chen, A. G. Khachaturyan, C. L. Zhang, and S.-W. Cheong
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Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering

R. Gago, L. Vázquez, O. Plantevin, T. H. Metzger, J. Muñoz-García, R. Cuerno, and M. Castro

Appl. Phys. Lett. 89, 233101 (2006); http://dx.doi.org/10.1063/1.2398916 (3 pages) | Cited 20 times

Online Publication Date: 4 December 2006

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The temporal evolution of the characteristic wavelength (λ) and ordering range (ξ) of self-organized nanodot patterns induced during Ar+ ion beam sputtering on Si(001) and Si(111) surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of λ (up to 54–60 nm) and increase in ξ (up to 400–500 nm) after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si(111) surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirmed by theoretical simulations.
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81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.47.Fg Semiconductor surfaces
81.16.Rf Micro- and nanoscale pattern formation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)

Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting

S. Kiravittaya, M. Benyoucef, R. Zapf-Gottwick, A. Rastelli, and O. G. Schmidt

Appl. Phys. Lett. 89, 233102 (2006); http://dx.doi.org/10.1063/1.2399354 (3 pages) | Cited 34 times

Online Publication Date: 4 December 2006

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Ordered GaAs/AlGaAs quantum dots (QDs) are fabricated on patterned GaAs(001) substrates and their optical properties are investigated by microphotoluminescence (PL) spectroscopy. QDs exhibit sharp excitonic lines with typical single QD emission features. Photon-correlation spectroscopy shows single photon emission for the neutral exciton transition. Polarization-dependent PL measurements reveal a sharp exciton line and a fine structure exchange splitting of about 70 μeV.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
73.21.La Quantum dots

Laser-activated surface-enhanced Raman scattering substrates capable of single molecule detection

A. Kaan Kalkan and Stephen J. Fonash

Appl. Phys. Lett. 89, 233103 (2006); http://dx.doi.org/10.1063/1.2399369 (3 pages) | Cited 6 times

Online Publication Date: 4 December 2006

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Surface-enhanced Raman scattering (SERS) substrates were obtained through silver reduction on and by nanostructured Si films. The absence of any chemical agents on the Ag nanoparticle surfaces allows analyte adsorption and SERS detection immediately with spotting. These SERS substrates have the further unique and useful attribute of being laser activated; i.e., laser impingement causes Ostwald ripening and formation of aggregates (e.g., dimers and trimers), which are essential for single molecule detection. Single molecule detection of fluorescein characterized with intermittent spectral fluctuations as well as a dramatic decrease in inhomogeneous Raman linewidth was demonstrated.
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78.30.-j Infrared and Raman spectra
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Combinational template-assisted fabrication of hierarchically ordered nanowire arrays on substrates for device applications

Maria A. S. Chong, Yue Bing Zheng, Han Gao, and Lee Kheng Tan

Appl. Phys. Lett. 89, 233104 (2006); http://dx.doi.org/10.1063/1.2399935 (3 pages) | Cited 20 times

Online Publication Date: 4 December 2006

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By combining two self-organized templates, the authors fabricate hierarchically ordered nanowire arrays on substrates. The nanowire arrays consist of periodic voids at the microscale and hexagonally packed nanowires at the nanoscale. The nanowires are created by selective electrodeposition using nanoporous anodic alumina as a template and a porous gold film as a working electrode that is patterned by microsphere monolayers. In addition to in-plane hierarchical structure, they have sequentially varied the vertical structure of the nanowires. This approach is simple, inexpensive, and high throughput to fabricate nanostructures on substrates.
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81.16.Rf Micro- and nanoscale pattern formation
81.16.Dn Self-assembly
81.16.Nd Micro- and nanolithography
81.15.Pq Electrodeposition, electroplating
68.65.Ac Multilayers
61.46.-w Structure of nanoscale materials

Area-selective deposition of self-assembled monolayers on SiO2/Si(100) patterns

Changshun Wang, Xu Pan, Cunying Sun, and Tsuneo Urisu

Appl. Phys. Lett. 89, 233105 (2006); http://dx.doi.org/10.1063/1.2400114 (3 pages) | Cited 2 times

Online Publication Date: 4 December 2006

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Area-selective deposition of self-assembled monolayers (SAMs) has been demonstrated on patterns of SiO2/Si(100). The pattern was fabricated by synchrotron radiation stimulated etching of SiO2 thin films on Si substrate. Several kinds of the patterns were obtained with different types of masks. A dodecene SAM was deposited on Si surface and an octadecyltrichlorosilane SAM was deposited on SiO2 surface. The deposited SAMs were densely packed and well ordered characterized by infrared spectroscopy, ellipsometry, and water contact angle measurements.
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68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
68.03.Cd Surface tension and related phenomena
81.65.Cf Surface cleaning, etching, patterning
78.66.Qn Polymers; organic compounds

Assembly and measurement of a hybrid nanowire-bulk thermoelectric device

Jennifer Keyani, Angelica M. Stacy, and Jeff Sharp

Appl. Phys. Lett. 89, 233106 (2006); http://dx.doi.org/10.1063/1.2400199 (3 pages) | Cited 9 times

Online Publication Date: 4 December 2006

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Bi1−xSbx nanowires are predicted to show an increased thermoelectric efficiency compared to bulk materials. The authors have synthesized dense Bi0.3Sb0.7 nanowire arrays by electrodeposition into porous anodic alumina and fabricated Ni electrical contacts to the wires. The nanowire/alumina composite was assembled into a hybrid nanowire-bulk thermoelectric device, and electrical measurements were used to calculate the device ZT. The nanowire array produced a temperature difference of 7 °C and the hybrid couple had a ZT of 0.12, which is on par with an equivalent bulk couple.
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85.80.Fi Thermoelectric devices
81.15.Pq Electrodeposition, electroplating

Quantum dot manipulation in a single-walled carbon nanotube using a carbon nanotube gate

Dong Su Lee, Seung Joo Park, Sang Deok Park, Yung Woo Park, Marianna Kemell, Mikko Ritala, Johannes Svensson, Mats Jonson, and Eleanor E. B. Campbell

Appl. Phys. Lett. 89, 233107 (2006); http://dx.doi.org/10.1063/1.2402119 (3 pages) | Cited 5 times

Online Publication Date: 5 December 2006

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Cross junctions of carbon nanotubes (CNTs) separated by thin oxide layers have been fabricated, in which the top CNT is used as a local gate to control the electron transport through the lower CNT. Coulomb oscillation was observed in the lower CNTs at low temperatures. The gating field from the upper CNTs is seen to modulate the band structure in the lower CNTs, producing double quantum dot systems. The ability to modulate the electronic structure of CNTs in such a way opens up many possibilities for future electronic and logical nanodevices.
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73.63.Fg Nanotubes
73.22.-f Electronic structure of nanoscale materials and related systems
73.21.La Quantum dots
85.35.Kt Nanotube devices
81.07.Ta Quantum dots
81.07.De Nanotubes

Fabrication of probe-typed carbon nanotube point emitters

Seung Il Jung, Jai Seong Choi, Hyung Cheoul Shim, Soohyun Kim, Sung Ho Jo, and Cheol Jin Lee

Appl. Phys. Lett. 89, 233108 (2006); http://dx.doi.org/10.1063/1.2402222 (3 pages) | Cited 6 times

Online Publication Date: 5 December 2006

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Probe-typed carbon nanotube (CNT) point emitter was fabricated by attaching single-walled CNT (SWCNT) and double-walled CNT (DWCNT) bundles onto the atomic force microscope tip using dielectrophoresis method. The field emission current from SWCNT point emitter was 4.9 μA at 750 V, which is corresponding to the emission current density of at least 1.2×103 A/cm2. The Fowler-Nordheim plots for the SWCNT and DWCNT point emitters revealed that the SWCNT bundle consists of more individual SWCNTs than DWCNT bundle and, as a result, the field emission performance of the SWCNT point emitter is better than the DWCNT point emitter. It is suggested that the probe-typed CNT point emitters can be used for microwave amplifiers and high-resolution electron-beam instruments.
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85.35.Kt Nanotube devices
81.07.De Nanotubes

Rectifying junction in a single ZnO vertical nanowire

Basudev Pradhan, Sudip K. Batabyal, and Amlan J. Pal

Appl. Phys. Lett. 89, 233109 (2006); http://dx.doi.org/10.1063/1.2398899 (3 pages) | Cited 11 times

Online Publication Date: 5 December 2006

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The authors introduce dopants in vertically grown single crystalline ZnO nanowires in a controlled manner. A section of the nanowires is doped with aluminum as donor during crystal nucleation, resulting in n-n+ junction. Current-voltage characteristics of these single nanowire junctions via scanning tunneling microscopy and mercury-probe methods are asymmetric, displaying rectifying behavior. By inversing the junction during the growth or by introducing lithium as acceptor to form a n-p junction, the directionality of current flow in the nanowires becomes reversed. The single nanowire diode junctions are very stable in ambient condition and hence open up a new dimension in nanoelectronics.
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81.07.Bc Nanocrystalline materials
81.05.Dz II-VI semiconductors
61.46.Hk Nanocrystals
73.40.Ei Rectification
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.16.-c Methods of micro- and nanofabrication and processing

Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

A. S. Bracker, M. Scheibner, M. F. Doty, E. A. Stinaff, I. V. Ponomarev, J. C. Kim, L. J. Whitman, T. L. Reinecke, and D. Gammon

Appl. Phys. Lett. 89, 233110 (2006); http://dx.doi.org/10.1063/1.2400397 (3 pages) | Cited 45 times

Online Publication Date: 5 December 2006

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Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. The authors have grown vertically aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. They present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.
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73.63.Kv Quantum dots
73.40.Gk Tunneling

Si nanowire growth and characterization using a microelectronics-compatible catalyst: PtSi

T. Baron, M. Gordon, F. Dhalluin, C. Ternon, P. Ferret, and P. Gentile

Appl. Phys. Lett. 89, 233111 (2006); http://dx.doi.org/10.1063/1.2402118 (3 pages) | Cited 19 times

Online Publication Date: 6 December 2006

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Crystalline Si nanowires have been grown using a microelectronics-friendly solid-phase catalyst (PtSi) by chemical vapor deposition. Tapered growth occurs at high deposition temperatures (>700 °C) due to uncatalyzed Si deposition at wire sidewalls, but this effect can be reduced at lower T (<600 °C), while still maintaining reasonable growth rates (1 μm/h). Electrical testing of individual nanowires using conductive atomic force microscopy on as-grown samples demonstrates that wires are conducting with intrinsic resistivities in the 10–50 Ω cm range.
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81.07.Vb Quantum wires
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Cy Elemental semiconductors
73.63.Nm Quantum wires
85.40.Sz Deposition technology

Toward laser emission of epitaxial nanorod arrays of ZnO grown by electrodeposition

T. Pauporté, D. Lincot, B. Viana, and F. Pellé

Appl. Phys. Lett. 89, 233112 (2006); http://dx.doi.org/10.1063/1.2402223 (3 pages) | Cited 43 times

Online Publication Date: 6 December 2006

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Arrays of epitaxial, vertically oriented nanorods of ZnO are grown at low temperature (80 °C) on the (0002) plane of GaN single crystals by electrodeposition in an aqueous solution. The freestanding nanocolumns are prepared by a template-free method based on simple solution chemistry. At room temperature, the nanorods present an amplified ultraviolet emission centered at 381 nm with an excitation threshold at 4.4 MW cm−2. The amplified emission of the ZnO columns is dominated by the radiative recombination of excitons.
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78.45.+h Stimulated emission
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.70.Hj Laser materials

TiSi2/Si heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory

Yan Zhu, Bei Li, Jianlin Liu, G. F. Liu, and J. A. Yarmoff

Appl. Phys. Lett. 89, 233113 (2006); http://dx.doi.org/10.1063/1.2402232 (3 pages) | Cited 8 times

Online Publication Date: 7 December 2006

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TiSi2/Si heteronanocrystals with a density of 5×1011 cm−2 were formed on a thermally oxidized p-type Si substrate by using self-aligned silicide technique. Metal-oxide-semiconductor-field-effect-transistor (MOSFET) memory devices were fabricated using these heteronanocrystals as floating gates. As compared to Si nanocrystal MOSFET memory, TiSi2/Si heteronanocrystal memories exhibit higher charge storage capacity, longer retention, better writing efficiency, less writing saturation, and faster erasing speed.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

Optical emission from C60-coupled β-FeSi2 nanocomposites

X. L. Wu, F. S. Xue, Z. Y. Zhang, and Paul K. Chu

Appl. Phys. Lett. 89, 233114 (2006); http://dx.doi.org/10.1063/1.2402892 (3 pages) | Cited 1 time

Online Publication Date: 7 December 2006

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C60-coupled β-FeSi2 nanocomposite structures were fabricated and their photoluminescence (PL) properties were investigated. The nanocomposites exhibit a pinned PL peak at 570 nm and a band edge at ∼ 370 nm. Spectral analyses suggest that the pinned PL behavior is closely related to both the β-FeSi2 nanocrystals and the coupled C60. A band-mixing model based on the direct and indirect gaps in a nanoenvironment consisting of mainly β-FeSi2 nanocrystals and C60 is proposed and used to derive the electronic states. Good agreement is achieved between the theoretical calculation and experimental results.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.55.Hx Other solid inorganic materials
73.20.At Surface states, band structure, electron density of states

Fabrication of GaN nanowire arrays by confined epitaxy

Xin Wang, Xinyu Sun, Michael Fairchild, and Stephen D. Hersee

Appl. Phys. Lett. 89, 233115 (2006); http://dx.doi.org/10.1063/1.2402893 (3 pages) | Cited 19 times

Online Publication Date: 7 December 2006

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The authors report the fabrication of GaN nanowire arrays inside a thick SiNx, selective growth mask that was patterned by interferometric lithography and dry etching. The GaN nanowires are molded by the apertures in the selective growth mask and the growth is epitaxial with respect to the underlying GaN layer. The precise location and diameter of each nanowire in the array are controlled by the growth mask patterning, and the resulting array has a long-range order that is compatible with photonic crystal applications. This process uses conventional metal organic precursors and does not require any additional metal catalysts.
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81.05.Hd Other semiconductors
81.07.Vb Quantum wires
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.Nd Micro- and nanolithography
81.65.Cf Surface cleaning, etching, patterning
81.16.Rf Micro- and nanoscale pattern formation

Electronic composite of sulfonated tetrafluorethylene copolymer with potassium ferricyanide exhibiting room-temperature negative differential resistance

Yongki Choi, Gang Wang, Siu-Tung Yau, and Yongki Choi

Appl. Phys. Lett. 89, 233116 (2006); http://dx.doi.org/10.1063/1.2402903 (3 pages)

Online Publication Date: 7 December 2006

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A two-phase composite material was prepared by mixing the polymer Nafion with an electroactive molecule, potassium ferricyanide. The current-voltage characteristic of the material shows a finite conductance about zero bias, indicating a metal-like electrical conduction. The conductance is found to be proportional to the concentration of the potassium ferricyanide molecule and temperature. A conductance peak is present at a low bias voltage, providing a region of negative differential resistance. A peak-to-valley current ratio of 1.8 was obtained with a current density of 30 μA/cm2. A conduction mechanism based electron tunneling between the active sites of the molecule is proposed.
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72.80.Tm Composite materials
73.40.Gk Tunneling

Giant optical birefringence in ensembles of semiconductor nanowires

O. L. Muskens, M. T. Borgström, E. P. A. M. Bakkers, and J. Gómez Rivas

Appl. Phys. Lett. 89, 233117 (2006); http://dx.doi.org/10.1063/1.2402906 (3 pages) | Cited 14 times

Online Publication Date: 7 December 2006

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Giant birefringence is demonstrated in ensembles of randomly grown, vertically aligned semiconductor nanowires. Bottom-up fabrication of epitaxial semiconductor nanowires grown using the vapor-liquid-solid mechanism yields a highly anisotropic photonic metamaterial. The birefringence in the material is shown to depend on the nanowire length. Short nanowires with a volume filling fraction around 50% exhibit the strongest birefringence, in agreement with effective medium theories. A large difference is found between the in-plane and out-of-plane refractive indices of Δn = 0.8, exceeding by a factor of 75 the natural birefringence of quartz and by more than a factor of 2 that of inverted artificial materials.
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78.67.Lt Quantum wires
78.20.Fm Birefringence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.65.La Quantum wires (patterned in quantum wells)

Sub-Kelvin transport spectroscopy of fullerene peapod quantum dots

Pawel Utko, Jesper Nygård, Marc Monthioux, and Laure Noé

Appl. Phys. Lett. 89, 233118 (2006); http://dx.doi.org/10.1063/1.2403909 (3 pages) | Cited 18 times

Online Publication Date: 7 December 2006

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The authors have studied electrical transport properties of individual C60 fullerene peapods, i.e., single-wall carbon nanotubes encapsulating C60 molecules. Their measurements indicated power lawlike temperature dependencies of linear conductance similar to those for empty nanotubes. At temperatures below 30 K, peapod devices behaved as highly regular individual quantum dots showing regular Coulomb blockade oscillations. Signatures of Kondo physics appeared at the lowest measurement temperature of 315 mK.
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73.63.Fg Nanotubes
73.63.Kv Quantum dots
73.23.Hk Coulomb blockade; single-electron tunneling

Near-field optical properties of single plasmonic nanowires

Thierry Laroche and Christian Girard

Appl. Phys. Lett. 89, 233119 (2006); http://dx.doi.org/10.1063/1.2403914 (3 pages) | Cited 40 times

Online Publication Date: 7 December 2006

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The authors apply the finite difference time domain method to study the propagation of a local excitation along metallic nanowires of subwavelength cross section. The metallic nanowires are elongated cylinders deposited on a transparent substrate. A tightly focused Gaussian beam illuminates one end of the nanowires. The localized surface plasmon excitations propagate along the nanowire over distances much larger than the incident wavelength. According to recent experimental studies, they show that such nanostructures behave like a Fabry-Pérot cavity with large value of surface plasmon propagation length.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.67.Lt Quantum wires

Solid state self-assembly of nanocheckerboards

S. Yeo, Y. Horibe, S. Mori, C. M. Tseng, C. H. Chen, A. G. Khachaturyan, C. L. Zhang, and S.-W. Cheong

Appl. Phys. Lett. 89, 233120 (2006); http://dx.doi.org/10.1063/1.2402115 (3 pages) | Cited 23 times

Online Publication Date: 7 December 2006

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The authors introduce an emergent method to fabricate a few-nanometer-size columnar superlattice with a checkerboard pattern in inorganic spinels by harnessing the Jahn-Teller structural distortion. Transmission electron microscope images reveal that the fundamental building blocks are two types of long nanorods with the ∼ 4×4×70 nm3 size, which are alternatively stacked in a way that the cross sectional and side views show checkerboard and herringbone patterns, respectively. The authors discuss that the strain induced by the Jahn-Teller distortion causes this peculiar self-assembled nanostructure in the coherent mixture of two spinel phases. This pure solid state self-assembly can be implemented to fabricate heterogeneous nanostructures with practical functionalities.
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81.16.Dn Self-assembly
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.65.Cd Superlattices
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

III-VI compound semiconductor indium selenide (In2Se3) nanowires: Synthesis and characterization

Xuhui Sun, Bin Yu, Garrick Ng, Thuc Dinh Nguyen, and M. Meyyappan

Appl. Phys. Lett. 89, 233121 (2006); http://dx.doi.org/10.1063/1.2388890 (3 pages) | Cited 28 times

Online Publication Date: 8 December 2006

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The authors report the synthesis of one-dimensional indium selenide nanowire, a III-VI group compound semiconductor nanostructure with potential applications in data storage, solar cells, and optoelectronics. Nanoscale gold particles were used as catalysts and growth was also demonstrated using indium as self-catalyst. The growth mechanism is confirmed to be vapor-liquid-solid process by in situ heating experiments in which In and Se were found to diffuse back into the gold catalyst bead forming a Au–In–Se alloy that was molten at elevated temperatures. The morphology, composition, and crystal structure of the In2Se3 nanowires (NWs) were analyzed by scanning electron microscopy, energy dispersive x-ray spectroscopy, and high-resolution transmission electron microscopy.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.16.Hc Catalytic methods
81.05.Hd Other semiconductors
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
73.63.Nm Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Fragmentation of colloidal nanoparticles by femtosecond laser-induced supercontinuum generation

S. Besner, A. V. Kabashin, and M. Meunier

Appl. Phys. Lett. 89, 233122 (2006); http://dx.doi.org/10.1063/1.2402944 (3 pages) | Cited 27 times

Online Publication Date: 8 December 2006

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A femtosecond laser-based method to control the size characteristics of gold colloidal nanoparticles is reported. The method uses the supercontinuum generation produced through a strong nonlinear-optical interaction of the femtosecond radiation with a liquid to fragment relatively large colloids and reduce their agglomeration. The fragmented species then recoalesce to form smaller, less dispersed, and much more stable nanoparticles in the solution. The size of the nanoparticles after the treatment is independent of the initial characteristics of colloids, but depends strongly on laser parameters and on the presence of chemically active species in the solution.
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78.47.-p Spectroscopy of solid state dynamics
82.70.Dd Colloids
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
42.65.-k Nonlinear optics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Property enhancement of optically transparent bionanofiber composites by acetylation

Masaya Nogi, Kentaro Abe, Keishin Handa, Fumiaki Nakatsubo, Shinsuke Ifuku, and Hiroyuki Yano

Appl. Phys. Lett. 89, 233123 (2006); http://dx.doi.org/10.1063/1.2403901 (3 pages) | Cited 19 times

Online Publication Date: 8 December 2006

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The authors studied acetylation of bacterial cellulose (BC) nanofibers to widen the applications of BC nanocomposites in optoelectronic devices. The slight acetylation of BC nanofibers significantly reduces the hygroscopicity of BC nanocomposites, while maintaining their high optical transparency and thermal stability. Furthermore, the degradation in optical transparency at elevated temperature (200 °C) was significantly reduced by acetylation treatment. Therefore, the acetylation of bionanofibers has an extraordinary potential as treatment for property enhancement of bionanofiber composites.
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81.05.Qk Reinforced polymers and polymer-based composites
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Jk Polymers and organics
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.

Tunneling electron transport of silicon nanochains studied by in situ scanning electron microscopy

Hideo Kohno, Seiji Takeda, and Tomoki Akita

Appl. Phys. Lett. 89, 233124 (2006); http://dx.doi.org/10.1063/1.2403915 (3 pages) | Cited 5 times

Online Publication Date: 8 December 2006

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Electron transport and field emission properties of silicon nanochains are studied by in situ scanning electron microscopy at bias voltages up to 120 V using a micromanipulator system. The current-voltage (I-V) characteristics follow the Fowler-Nordheim law when the anode is in contact with the silicon nanochains as well as when separated by about 1 μm. This result suggests that the field-induced tunneling current is dominant even when the microprobe is in contact with the silicon nanochains.
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73.63.Bd Nanocrystalline materials
73.40.Gk Tunneling
79.70.+q Field emission, ionization, evaporation, and desorption

Haeckelites: A promising anode material for lithium batteries application. An ab initio and molecular dynamics theoretical study

Giannis Mpourmpakis, George E. Froudakis, and Emmanuel Tylianakis

Appl. Phys. Lett. 89, 233125 (2006); http://dx.doi.org/10.1063/1.2403922 (3 pages) | Cited 6 times

Online Publication Date: 8 December 2006

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Using both ab initio and molecular dynamics calculations, the authors have investigated the lithium interaction with carbon nanotubes and the recently reported haeckelite nanotubes. Their results show that lithium metals interact preferably with the pentagonal and heptagonal rings of the haeckelite rather than the hexagonal of the carbon nanotube. The structural and electronic differences between the carbon and haeckelite nanotubes result in different binding energies of lithium metals. Thus, haeckelites are more promising materials for lithium storage applications than carbon nanotubes. They report that this carbon material can store Li metals with a density of LiC1.6.
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61.46.Fg Nanotubes
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
71.20.Tx Fullerenes and related materials; intercalation compounds
82.45.Fk Electrodes
71.15.Nc Total energy and cohesive energy calculations
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
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