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Applied Physics Letters / Volume 89 / Issue 24 / DEVICE PHYSICS

Appl. Phys. Lett. 89, 243516 (2006); doi:10.1063/1.2405863 (3 pages)

Ultrashallow (<10 nm) p+/n junction formed by B18H22 cluster ion implantation and excimer laser annealing

Sungho Heo1, Hyunsang Hwang1, H. T. Cho2, and W. A. Krull2

1Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, No. 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
2SemEquip, Inc., 34 Sullivan Road, Billerica, Massachusetts 01862

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(Received 3 April 2006; accepted 8 November 2006; published online 15 December 2006)

In order to form an ultrashallow p+/n junction, incorporation of a top amorphous-silicon (a-Si) layer is necessary so as to avoid channeling and to fully activate the dopant. Conventional ultrashallow junction processes require two-step implantation such as preamorphization by Si+ or Ge+ implantation and ultralow (<0.5 keV) energy B+ implantation. In this report, the authors investigate B18H22+ implantation. Due to the heavy mass of cluster ions, one-step ion implantation at 5 keV readily forms a 5-nm-thick a-Si layer and an ultrashallow junction without B channeling. By employing excimer laser annealing, the authors have obtained a shallow junction depth ( ∼ 9 nm) and low Rs ( ∼ 830 Ω/◻).

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

boron compounds, silicon, elemental semiconductors, ion implantation, p-n junctions, amorphisation, amorphous semiconductors, laser beam annealing, electrical resistivity

PACS

  • 61.80.Ba

    Ultraviolet, visible, and infrared radiation effects (including laser radiation)

  • 61.82.Fk

    Semiconductors

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2405863

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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