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Applied Physics Letters / Volume 89 / Issue 24 / DEVICE PHYSICS

Appl. Phys. Lett. 89, 243517 (2006); http://dx.doi.org/10.1063/1.2405877 (3 pages)

Influence of residual impurity background on the nonradiative recombination processes in high purity InAs/GaSb superlattice photodiodes

E. C. F. da Silva, D. Hoffman, A. Hood, B. M. Nguyen, P. Y. Delaunay, and M. Razeghi

Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208

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(Received 14 August 2006; accepted 9 November 2006; published online 15 December 2006)

The influence of the impurity background on the recombination processes in type-II InAs/GaSb superlattice photodiodes with a cutoff wavelength of approximately 4.8 μm was investigated by electroluminescence measurements. Using an iterative fitting procedure based on the dependence of the quantum efficiency of the electroluminescence on the injection current, the Auger and Shockley-Read-Hall lifetimes were determined for photodiodes with background concentration below 1015 cm−3. The authors determined in which range of the injection current Shockley-Read-Hall or Auger recombination is predominant. At T = 300 K, the findings indicate that in high quality material with a low background concentration Auger effect becomes the prevalent mechanism even at low applied current.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium compounds, semiconductor superlattices, photodiodes, impurities, electron-hole recombination, electroluminescence, iterative methods, Auger effect

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2405877

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, Appl. Phys. Lett. 71, 3251 (1997)APPLAB000071000022003251000001.

    W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).

    A. Hood, D. Hoffman, Y. Wei, F. Fuchs, and M. Razeghi, Appl. Phys. Lett. 88, 052112 (2006)APPLAB000088000005052112000001.

    J. R. Meyer, C. L. Felix, W. W. Bewley, I. Vurgaftman, E. H. Aifer, L. J. Olafsen, J. R. Lindle, C. A. Hoffman, M.-J. Yang, B. R. Bennett, B. V. Shanabrook, H. Lee, C.-H. Lin, S. S. Pei, and R. H. Miles, Appl. Phys. Lett. 73, 2857 (1998)APPLAB000073000020002857000001.


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