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11 Dec 2006

Volume 89, Issue 24, Articles (24xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 242109 (2006); http://dx.doi.org/10.1063/1.2405843 (3 pages)

Carlo R. da Cunha, Nobuyuki Aoki, Takahiro Morimoto, Yuichi Ochiai, Richard Akis, and David K. Ferry
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Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect

W. D. Hu, X. S. Chen, Z. J. Quan, C. S. Xia, W. Lu, and H. J. Yuan

Appl. Phys. Lett. 89, 243501 (2006); http://dx.doi.org/10.1063/1.2405416 (3 pages) | Cited 2 times

Online Publication Date: 11 December 2006

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Using a two-dimensional simulator, the authors report on demonstration of trapping of hot electrons at gate edge model in GaN-based high-electron-mobility transistors. Dynamic picture of hot electrons under gate pulse voltage is discussed in detail. Trapped charges may accumulate under punch-off gate voltage at gate edge drain side, where the electric field significantly changes and gate-voltage-dependent strain is induced. Significant band barrier is formed at the gate edges causing a notable current collapse. Self-heating effect is one of the reasons for current collapse and gate lag.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

H. B. Peng, M. E. Hughes, and J. A. Golovchenko

Appl. Phys. Lett. 89, 243502 (2006); http://dx.doi.org/10.1063/1.2399942 (3 pages) | Cited 5 times

Online Publication Date: 11 December 2006

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Electrical current fluctuation studies are reported for coaxial p-type and n-type single-wall carbon nanotube field-effect transistors (FETs). Abrupt discrete switching of the source-drain current is observed at room temperature. The authors attribute these random telegraph signals to charge fluctuating electron traps near the FET conduction channels. Evolution of the current-switching behavior associated with the occupancy of individual electron traps is demonstrated and analyzed statistically. The result strongly indicates room temperature single charge sensitivity in carbon nanotube FETs, which may offer potential applications for single molecule sensors based on suitably prepared FET devices.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Effect of gate metal on polymer transistor with glass substrate

Hsin-Fei Meng, Chien-Cheng Liu, Chin-Jung Jiang, Yu-Lin Yeh, Sheng-Fu Horng, and Chain-Shu Hsu

Appl. Phys. Lett. 89, 243503 (2006); http://dx.doi.org/10.1063/1.2403921 (3 pages) | Cited 4 times

Online Publication Date: 11 December 2006

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Poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) are fabricated on glass substrates with SiO2 as a gate dielectric over the gate. Indium tin oxide (ITO), Al, and Cr are employed as gate metals. For spin-coated FET, the mobility increases from 10−4–10−5 cm2/V s for ITO and Al gates to 10−2 cm2/V s for Cr gate. After O2 plasma treatment, the SiO2 roughness can be made as low as 0.7 nm. The mobility is further improved up to 0.3 cm2/V s by dip-coating P3HT. "Crossed rods" such as morphology can be observed in dip-coated FET with high mobility, indicating high degree of self-assembly facilitated by the flat SiO2 surface over Cr gate.
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85.30.Tv Field effect devices

Resistivity and resistive switching properties of Pr0.7Ca0.3MnO3 thin films

Masayuki Fujimoto, Hiroshi Koyama, Shinji Kobayashi, Yukio Tamai, Nobuyoshi Awaya, Yuji Nishi, and Toshimasa Suzuki

Appl. Phys. Lett. 89, 243504 (2006); http://dx.doi.org/10.1063/1.2404592 (3 pages) | Cited 11 times

Online Publication Date: 11 December 2006

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The authors studied the relationship between electrical resistivity and resistive switching properties in various stoichiometric and nonstoichiometric Pr1−xCaxMnO3 (PCMO) (x = 0.3) thin films fabricated by pulsed laser deposition. The resistivity of Pt/PCMO/Pt structured thin films depended mainly on the PCMO deposition temperature, which was related to the crystallinity of the thin films. The highest resistivity was obtained from the lowest deposition temperature (300 °C) specimen, and it was amorphous, while higher temperature deposition specimens (500–800 °C) showed specific crystallographic orientation depending on the deposition temperature but showed quite low resistivity. Amorphous film deposited at 350 °C exhibited monopolar resistive switching when pulses were applied.
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73.61.Jc Amorphous semiconductors; glasses
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition

Surface-acoustic-wave-driven luminescence from a lateral p-n junction

J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D. Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E. Norman, and A. J. Shields

Appl. Phys. Lett. 89, 243505 (2006); http://dx.doi.org/10.1063/1.2405419 (3 pages) | Cited 11 times

Online Publication Date: 12 December 2006

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The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
68.35.Iv Acoustical properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.63.Hs Quantum wells
72.20.Fr Low-field transport and mobility; piezoresistance

Writing and erasing information in multilevel logic systems of a single molecule using scanning tunneling microscope

Anirban Bandyopadhyay, K. Miki, and Y. Wakayama

Appl. Phys. Lett. 89, 243506 (2006); http://dx.doi.org/10.1063/1.2402895 (3 pages) | Cited 11 times

Online Publication Date: 12 December 2006

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Large double negative differential resistance (NDR) has enabled a single quinone derivative to be stable in the neutral (0), singly reduced (1), typical neutral conformation generated by releasing the charge (2), and doubly reduced state (3) at 90 K. The authors wrote and erased information by switching a single molecule among these four conducting states (0,1,2,3) showing random access memory and read only memory applications for terabit memory generation in future. Origin of NDR is investigated in typical functional groups of the molecule, in local environment, and at atomic junction with scanning-tunneling-microscope tip to conclude NDR as a collective phenomenon.
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84.30.Sk Pulse and digital circuits

Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

Toshihiro Kamohara, Morito Akiyama, Naohiro Ueno, Michiru Sakamoto, Kazuhiko Kano, Akihiko Teshigahara, Nobuaki Kawahara, and Noriyuki Kuwano

Appl. Phys. Lett. 89, 243507 (2006); http://dx.doi.org/10.1063/1.2405849 (3 pages) | Cited 14 times

Online Publication Date: 12 December 2006

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The authors have investigated the influence of sputtering pressure on the polarity distribution of aluminum nitride (AlN) films. They have found that sputtering pressure strongly influences the polarity distribution of AlN films prepared on molybdenum electrodes. The polarity distribution of the AlN films was observed by piezoresponse force microscopy. The polarity orientation is decided with respect to each fine grain constituting the AlN films, and polarity conversion from Al polarity to N polarity is observed with increasing sputtering pressure. The piezoelectric response of the films changes from +3.7 to −4.4 pC/N with increasing sputtering pressure from 0.36 to 4.0 Pa.
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
81.05.Ea III-V semiconductors

Adhesion energy in nanogap InP/InGaAs microcantilevers

Jan D. Makowski, Anand S. Gawarikar, and Joseph J. Talghader

Appl. Phys. Lett. 89, 243508 (2006); http://dx.doi.org/10.1063/1.2405854 (3 pages) | Cited 4 times

Online Publication Date: 12 December 2006

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The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 125 nm air gap in an InP/InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72±16 mJ m−2. Since the air gap is much smaller than has been measured previously, the influence of van der Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25 mJ m−2.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Thin-film transistor realized with a combined active layer

Qi Yang, Dejie Li, and Baolun Yao

Appl. Phys. Lett. 89, 243509 (2006); http://dx.doi.org/10.1063/1.2408629 (3 pages) | Cited 3 times

Online Publication Date: 12 December 2006

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A combined active layer thin-film transistor is reported. The effective channel length of this planar thin-film transistor is only 1.2 μm, and no high resolution lithography technology is necessary for the fabrication processes. A discontinuous metal film is deposited on the semiconductor layer to form the combined active layer. The on-state current for a 3 mm channel width is about 31 mA, which is sufficient for most flat panel display devices.
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85.30.Tv Field effect devices

Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire

M. Lorenz, R. Johne, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann, H. P. D. Schenk, S. I. Borenstain, A. Schön, C. Bekeny, T. Voss, and J. Gutowski

Appl. Phys. Lett. 89, 243510 (2006); http://dx.doi.org/10.1063/1.2405392 (3 pages) | Cited 11 times

Online Publication Date: 13 December 2006

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Excitonic luminescence in ZnO exhibits subnanosecond lifetimes combined with high efficiency, which makes epitaxial ZnO a promising ultrafast scintillator material for envisaged imaging applications with high data rate. ZnO thin films on sapphire show external ultraviolet electron-photon conversion efficiencies up to 0.42 photons/(keV e−) at room temperature and only minor lateral microscopic cathodoluminescence intensity variations. Peak shifts and occasionally observed double peaks found in cathodoluminescence spectra of epitaxial ZnO films with dependence on the detection geometry, the excitation depth, and the surface morphology are explained by a model based on photon propagation including self-absorption.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Triphenylamine-functionalized rhenium (I) complex as a highly efficient yellow-green emitter in electrophosphorescent devices

Chunbo Liu, Jiang Li, Bin Li, Ziruo Hong, Feifei Zhao, Shiyong Liu, and Wenlian Li

Appl. Phys. Lett. 89, 243511 (2006); http://dx.doi.org/10.1063/1.2408638 (3 pages) | Cited 14 times

Online Publication Date: 13 December 2006

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A complex (3-ethyl-2-(4′-triphenylamino)imidazo[4,5-f] 1,10-phenanthroline) Re(CO)3Br functionalized by a hole-transport group triphenylamine was used to fabricate organic light-emitting devices (OLEDs). A current efficiency up to 17.6 cd/A corresponding to a power efficiency of 9.2 ml/W and a peak brightness as high as 6500 cd/m2 were obtained. These results represent the best values reported for OLEDs based on rhenium complexes. Enhanced carrier injection capability of Re complex and efficient charge-trapping formation followed by triplet exciton confinement in the emissive layer make for the outstanding electrophosphorescent performances.
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85.60.Jb Light-emitting devices

Magnetoelectric gyration effect in Tb1−xDyxFe2−y/Pb(Zr,Ti)O3 laminated composites at the electromechanical resonance

Shuxiang Dong, Junyi Zhai, J. F. Li, D. Viehland, and M. I. Bichurin

Appl. Phys. Lett. 89, 243512 (2006); http://dx.doi.org/10.1063/1.2404977 (3 pages) | Cited 33 times

Online Publication Date: 14 December 2006

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A giant current-to-voltage (I-V) gyration effect was found in magnetostrictive Tb1−xDyxFe2−y and piezoelectric Pb(Zr,Ti)O3 laminated composites. An equivalent circuit theory was developed for magnetoelectric gyration, which predicted that I-V conversion is reduced by a frequency transfer function ZR(f) and that the maximum occurs at resonance. A giant conversion coefficient up to 2500 V/A was predicted and confirmed.
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75.80.+q Magnetomechanical effects, magnetostriction
77.65.-j Piezoelectricity and electromechanical effects
75.50.Bb Fe and its alloys
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory

Daigil Cha, Jung H. Shin, Sangjin Park, Eunha Lee, Yoondong Park, Youngsoo Park, In-Kyeong Yoo, Kwang Soo Seol, and Suk-Ho Choi

Appl. Phys. Lett. 89, 243513 (2006); http://dx.doi.org/10.1063/1.2404586 (3 pages) | Cited 4 times

Online Publication Date: 14 December 2006

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The memory performance of floating gate nonvolatile memory based on amorphous Si (a-Si) nanoclusters self-assembled during low-temperature oxidation is investigated. A 2 nm thick a-Si layer was grown on a top of a 5.6 nm thick thermal oxide tunneling layer by ultrahigh vacuum ion beam sputter deposition and subsequently oxidized by annealing in flowing N2/O2 (9:1) environment for 0–540 s at 900 °C. After oxidation, a 14 nm thick Al2O3 control oxide layer was grown by atomic layer deposition. The authors find that the a-Si layer breaks up upon oxidation, self-assembling into a dense array of <3 nm sized a-Si nanoclusters separated by thermal oxide after 180 s. This combination of discrete Si nanoclusters separated by thermal oxide and modest thermal budget enabled by the use of amorphous cluster enables achieving a trap density in the excess of 1013 cm−2 and a retention time of >1000 s at at 150 °C.
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84.30.Sk Pulse and digital circuits
81.16.Dn Self-assembly
81.07.-b Nanoscale materials and structures: fabrication and characterization
73.63.-b Electronic transport in nanoscale materials and structures
73.22.-f Electronic structure of nanoscale materials and related systems
81.40.Gh Other heat and thermomechanical treatments

Highly sensitive ethanol sensors based on {100}-bounded In2O3 nanocrystals due to face contact

P. Feng, X. Y. Xue, Y. G. Liu, and T. H. Wang

Appl. Phys. Lett. 89, 243514 (2006); http://dx.doi.org/10.1063/1.2404935 (3 pages) | Cited 24 times

Online Publication Date: 15 December 2006

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The authors report the fabrication and characterization of ethanol sensors with extremely high sensitivity using In2O3 nanocrystals bounded by {100} facets as the sensing materials. The sensitivity of the sensors is about 10 to 1 ppm ethanol, and increases nearly linearly up to about 200 as the ethanol concentration is raised to 100 ppm. In the sensing film, the nanocrystals contact each other mainly through face contacts, most of which contribute to the gas sensing. This is the basis for the highly sensitive ethanol sensing.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Megahertz operation of organic field-effect transistors based on poly(3-hexylthiopene)

Veit Wagner, Paul Wöbkenberg, Arne Hoppe, and Jörg Seekamp

Appl. Phys. Lett. 89, 243515 (2006); http://dx.doi.org/10.1063/1.2405414 (3 pages) | Cited 35 times

Online Publication Date: 15 December 2006

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Switching speed is crucial for many applications in organic electronics. The possibility to achieve higher frequencies will enable new fields of applications. The authors demonstrate high-frequency organic thin film transistors based on poly(3-hexylthiophene). Transistors with submicron channel lengths show unity-gain bandwidth of 2 MHz in air at low supply voltages of 10 V. For channel lengths L below 500 nm deviations from ideal L scaling law are observed experimentally, which are attributed to contact effects. They present a model beyond the ideal scaling law to predict the maximum operational frequency based on transistor parameters, geometry, and contact resistance.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Ultrashallow (<10 nm) p+/n junction formed by B18H22 cluster ion implantation and excimer laser annealing

Sungho Heo, Hyunsang Hwang, H. T. Cho, and W. A. Krull

Appl. Phys. Lett. 89, 243516 (2006); http://dx.doi.org/10.1063/1.2405863 (3 pages) | Cited 9 times

Online Publication Date: 15 December 2006

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In order to form an ultrashallow p+/n junction, incorporation of a top amorphous-silicon (a-Si) layer is necessary so as to avoid channeling and to fully activate the dopant. Conventional ultrashallow junction processes require two-step implantation such as preamorphization by Si+ or Ge+ implantation and ultralow (<0.5 keV) energy B+ implantation. In this report, the authors investigate B18H22+ implantation. Due to the heavy mass of cluster ions, one-step ion implantation at 5 keV readily forms a 5-nm-thick a-Si layer and an ultrashallow junction without B channeling. By employing excimer laser annealing, the authors have obtained a shallow junction depth ( ∼ 9 nm) and low Rs ( ∼ 830 Ω/◻).
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Influence of residual impurity background on the nonradiative recombination processes in high purity InAs/GaSb superlattice photodiodes

E. C. F. da Silva, D. Hoffman, A. Hood, B. M. Nguyen, P. Y. Delaunay, and M. Razeghi

Appl. Phys. Lett. 89, 243517 (2006); http://dx.doi.org/10.1063/1.2405877 (3 pages) | Cited 6 times

Online Publication Date: 15 December 2006

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The influence of the impurity background on the recombination processes in type-II InAs/GaSb superlattice photodiodes with a cutoff wavelength of approximately 4.8 μm was investigated by electroluminescence measurements. Using an iterative fitting procedure based on the dependence of the quantum efficiency of the electroluminescence on the injection current, the Auger and Shockley-Read-Hall lifetimes were determined for photodiodes with background concentration below 1015 cm−3. The authors determined in which range of the injection current Shockley-Read-Hall or Auger recombination is predominant. At T = 300 K, the findings indicate that in high quality material with a low background concentration Auger effect becomes the prevalent mechanism even at low applied current.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Inelastic ball-plane impact: An accurate way to measure the normal restitution coefficient

M. Leconte, Y. Garrabos, F. Palencia, C. Lecoutre, P. Evesque, and D. Beysens

Appl. Phys. Lett. 89, 243518 (2006); http://dx.doi.org/10.1063/1.2400061 (3 pages) | Cited 3 times

Online Publication Date: 15 December 2006

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The authors describe a setup to measure accurately the normal restitution coefficient between a quasiresonant ball and a plane. It uses the fact that the trajectory of a single ball in a cylindrical box with a vibrating wall reduces rapidly to a merely periodic one dimensional dynamics, with little rotation. The ball speed is measured accurately from the time series of impacts. It is also used to study and calibrate a sphere-plane impact sensor. This sensor allows to determine the collision time at a microsecond accuracy and the maximum force applied. The collision is found to obey the Hertz law.
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45.40.-f Dynamics and kinematics of rigid bodies
46.55.+d Tribology and mechanical contacts

Organic memory device based on 3,3′-bis-(3,5-di-tert-butyl-4- methoxyphenyl)-2,2′-bithiophene with high endurance and robustness to ambient air operation

M. Caironi, D. Natali, M. Sampietro, C. Bertarelli, A. Bianco, A. Dundulachi, E. Canesi, and G. Zerbi

Appl. Phys. Lett. 89, 243519 (2006); http://dx.doi.org/10.1063/1.2408656 (3 pages) | Cited 12 times

Online Publication Date: 15 December 2006

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A conductance-switching memory cell based on 3,3′-bis-(3,5-di-tert-butyl-4-methoxyphenyl)-2,2′-bithiophene, showing long time retention, very high endurance to electrical stress, and operation in ambient air condition, is presented and the switching mechanism is investigated by comparing cells with aluminum and mercury top metal contacts. Write and erase cycles in excess of 200 and long term information retention of both states without refresh in excess of 48 h are demonstrated. The memory cell is also operating in air with only a small increase in threshold voltage values.
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84.30.Sk Pulse and digital circuits
85.30.-z Semiconductor devices

Observation of molecular nitrogen in N-doped Ge2Sb2Te5

Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, and Jin-Seo Noh

Appl. Phys. Lett. 89, 243520 (2006); http://dx.doi.org/10.1063/1.2408660 (3 pages) | Cited 23 times

Online Publication Date: 15 December 2006

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Ge2Sb2Te5 (GST) film in the crystalline state was nitrogen doped using the reactive sputtering method in order to increase sheet resistance. High-resolution x-ray absorption spectroscopy revealed that molecular nitrogen (N2) existed in the N-doped GST film. This finding implies that both molecular nitrogen and atomic-state nitrogen should be taken into account in understanding the structures of N-doped GST film. The molecular nitrogen is believed to exist at interstitial and vacancy sites, and more likely at grain boundaries.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.up Other materials
61.72.J- Point defects and defect clusters
61.72.Mm Grain and twin boundaries
73.61.Le Other inorganic semiconductors
78.70.Dm X-ray absorption spectra

Long-lifetime, high-efficiency white organic light-emitting diodes with mixed host composing double emission layers

Yung-Cheng Tsai and Jwo-Huei Jou

Appl. Phys. Lett. 89, 243521 (2006); http://dx.doi.org/10.1063/1.2408663 (3 pages) | Cited 27 times

Online Publication Date: 15 December 2006

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A long-lifetime, high-efficiency white organic light-emitting diode was fabricated with a mixed host in one of double emission layers. The first layer comprised yellow rubrene doped in a mixed host consisting of 50% N,N′diphenyl-N,N′-bis-(1-naphthyl)-1,1′-biphenyl-4-4′-diamine (NPB) and 50% 2-(t-butyl)-9,10-bis(2′-naphthyl)anthracene (TBADN). The second layer comprised blue 4,4′-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl] biphenyl doped in TBADN. This device exhibited the longest lifetime, five times that of its pure NPB counterpart. The resulting efficiency was 6.0 lm/W (10.9 cd/A) at 10 mA/cm2, 33% better than that of the NPB counterpart. These improvements were attributable to the mixed-host structure, which effectively dispersed carriers and gave a good charge balance.
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85.60.Jb Light-emitting devices
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