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11 Dec 2006

Volume 89, Issue 24, Articles (24xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 242109 (2006); http://dx.doi.org/10.1063/1.2405843 (3 pages)

Carlo R. da Cunha, Nobuyuki Aoki, Takahiro Morimoto, Yuichi Ochiai, Richard Akis, and David K. Ferry
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Stress-dependent scaling behavior of dynamic hysteresis in bulk soft ferroelectric ceramic

Rattikorn Yimnirun, Supattra Wongsaenmai, Supon Ananta, and Yongyut Laosiritaworn

Appl. Phys. Lett. 89, 242901 (2006); http://dx.doi.org/10.1063/1.2403182 (3 pages) | Cited 18 times

Online Publication Date: 11 December 2006

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The effects of frequency f, field amplitude E0, and mechanical stress σ on the hysteresis area 〈A〉 and their scaling relations were investigated on soft PZT bulk ceramics. The hysteresis area was found to depend on the frequency and field amplitude with a same set of exponents to the power-law scaling for both with and without stresses, indicating the universality. The inclusion of stresses into the power law was also obtained in the form of 〈A−Aσ = 0〉∝f−0.25E0σ0.44, which indicates the difference of the energy dissipation between the under stress and stress-free conditions and reveals how the hysteresis area decays with increasing stresses.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis

Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics

K. Ramani, C. R. Essary, S. Y. Son, V. Craciun, and R. K. Singh

Appl. Phys. Lett. 89, 242902 (2006); http://dx.doi.org/10.1063/1.2404604 (3 pages) | Cited 7 times

Online Publication Date: 11 December 2006

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A low temperature method ( ∼ 400 °C) for nitrogen incorporation in hafnia based dielectrics has been developed for future gate dielectric applications. Hf metal films were deposited on Si substrates in ammonia ambient and were subsequently oxidized under ultraviolet illumination. Using this method, an interfacial layer comprising Hf–Si–O–N bonding was formed at the hafnia-Si interface, which led to a substantial enhancement in the overall dielectric properties of the film. An equivalent oxide thickness of 11.5 Å and leakage current densities lower than 10−4 A/cm2 at a gate bias of −1 V were achieved by this approach.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Effect of conductive LaNiO3 electrode on the structural and ferroelectric properties of Bi3.25La0.75Ti3O12 films

M. Jain, B. S. Kang, and Q. X. Jia

Appl. Phys. Lett. 89, 242903 (2006); http://dx.doi.org/10.1063/1.2404949 (3 pages) | Cited 6 times

Online Publication Date: 12 December 2006

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Ferroelectric Bi3.25La0.75Ti3O12 (BLT) films were grown on Pt/Ti/SiO2/Si (Pt/Si), LaNiO3/Pt/Si, and LaNiO3/Si substrates using chemical solution deposition technique. X-ray diffraction analysis shows that films grown on conductive LaNiO3 electrodes had higher degree of (117) orientation as compared to that grown directly on Pt/Si substrate. High remanent polarization value (2Pr) ∼ 43.14 μC/cm2 (Ec of 111 kV/cm) under an applied field of 396 kV/cm was obtained for BLT film on LaNiO3/Pt/Si as compared to a value of 26 μC/cm2 obtained for BLT film on Pt/Si directly. There was no degradation in the switchable polarization (Psw−Pns) after 1010 switching cycles.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
68.55.-a Thin film structure and morphology

BaTiO3–SrTiO3 multilayer thin film electro-optic waveguide modulator

Jussi Hiltunen, Dilan Seneviratne, Rong Sun, Michael Stolfi, Harry L. Tuller, Jyrki Lappalainen, and Vilho Lantto

Appl. Phys. Lett. 89, 242904 (2006); http://dx.doi.org/10.1063/1.2404982 (3 pages) | Cited 11 times

Online Publication Date: 12 December 2006

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Mach-Zehnder electro-optic waveguide modulators were fabricated based on BaTiO3 (BTO)-SrTiO3 (STO) multilayer thin film stacks grown on single crystal MgO substrates by pulsed laser deposition. X-ray diffraction measurements confirmed the formation of a BTO-STO superlattice with periodicity of 11 unit cells. Strip-loaded waveguides were formed by patterning a SixNy film deposited onto the BTO-STO stack while Al electrodes of 3 mm length and 13 μm separation were fabricated in the vicinity of the active waveguide arm of the Mach-Zehnder modulator. An effective electro-optic coefficient of 73 pm/V at 1550 nm wavelength was determined for the deposited BTO-STO superlattice by measuring the output intensity as a function of applied electric field.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.79.Wc Optical coatings
07.60.Ly Interferometers
78.20.Jq Electro-optical effects
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Direct determination of the polarization direction of domains in BaTiO3 single crystal

Z. H. Zhang, X. Y. Qi, and X. F. Duan

Appl. Phys. Lett. 89, 242905 (2006); http://dx.doi.org/10.1063/1.2405380 (3 pages) | Cited 7 times

Online Publication Date: 12 December 2006

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The polarization directions of domains in BaTiO3 single crystal are determined by convergent-beam electron diffraction directly. The intensity distributions in the (001) and (00math) diffraction disks are different, which is due to the noncentrosymmetric unit cell of ferroelectrics. The in situ transmission electron microscopy observations on the evolution of domains under external fields indicate that the disk with a little brighter center fringes is the (001) disk and the polarization vector is toward this disk. The method provides a straightforward criterion for polarization direction determination of ferroelectric domains.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

ac conductivity relaxation processes in CaCu3Ti4O12 ceramics: Grain boundary and domain boundary effects

Wei Li and Robert W. Schwartz

Appl. Phys. Lett. 89, 242906 (2006); http://dx.doi.org/10.1063/1.2405382 (3 pages) | Cited 29 times

Online Publication Date: 12 December 2006

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The ac conductivity of CaCu3Ti4O12 ceramics associated with electrical charge carrier motion (ions or vacancies) was investigated as a function of frequency at different temperatures. The long range migration of charge carriers within the ceramic is restricted by two kinds of insulating barriers, namely, grain boundaries and domain boundaries. The potential barriers associated with these boundaries lead to two anomalies in conductivity response and three frequency-dependent contributions to conductivity: long range diffusion of carriers, carrier migration localized within grains, and carrier migration localized within domains.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
72.80.Sk Insulators
61.72.Mm Grain and twin boundaries
61.72.J- Point defects and defect clusters

Thermal stability of lanthanum scandate dielectrics on Si(100)

P. Sivasubramani, T. H. Lee, M. J. Kim, J. Kim, B. E. Gnade, R. M. Wallace, L. F. Edge, D. G. Schlom, F. A. Stevie, R. Garcia, Z. Zhu, and D. P. Griffis

Appl. Phys. Lett. 89, 242907 (2006); http://dx.doi.org/10.1063/1.2405418 (3 pages) | Cited 8 times

Online Publication Date: 12 December 2006

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The authors have examined the thermal stability of amorphous, molecular beam deposited lanthanum scandate dielectric thin films on top of Si (100) after a 1000 °C, 10 s rapid thermal anneal. After the anneal, crystallization of LaScO3 is observed. Excellent suppression of lanthanum and scandium diffusion into the substrate silicon is indicated by the back-side secondary ion mass spectrometry (SIMS) analyses. In contrast, front-side SIMS and high-resolution electron energy loss analyses of the amorphous Si/LaScO3/Si (100) stack indicated the outdiffusion of lanthanum and scandium into the silicon capping layer during the anneal.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
61.43.Er Other amorphous solids
61.72.Cc Kinetics of defect formation and annealing
64.70.K- Solid-solid transitions
66.30.-h Diffusion in solids
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.20.Uv Electron energy loss spectroscopy
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Complete set of elastic, dielectric, and piezoelectric coefficents of 0.93Pb(Zn1/3Nb2/3)O3–0.07PbTiO3 single crystal poled along [011]

Rui Zhang, Bei Jiang, Wenhua Jiang, and Wenwu Cao

Appl. Phys. Lett. 89, 242908 (2006); http://dx.doi.org/10.1063/1.2404613 (3 pages) | Cited 24 times

Online Publication Date: 12 December 2006

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The authors report a complete set of elastic, dielectric, and piezoelectric coefficients of rhomboheral phase 0.93Pb(Zn1/3Nb2/3)O3–0.07PbTiO3 single crystal poled along [011] measured at room temperature. It was found that the electromechanical coupling coefficients k32 and k33 of this domain engineered single crystal can reach 0.86 and 0.87, respectively, and the piezoelectric coefficients d32 and d15 are −1460 and 1823 pC/N, respectively. This complete set of data can meet the urgent need of device designers using these super piezoelectric crystals and also provide important information for fundamental studies on domain engineering.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ej Polarization and depolarization
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics

P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, B. H. Lee, G. Pant, M. J. Kim, R. M. Wallace, and B. E. Gnade

Appl. Phys. Lett. 89, 242909 (2006); http://dx.doi.org/10.1063/1.2392992 (3 pages) | Cited 12 times

Online Publication Date: 13 December 2006

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Mobility and charge trapping results for n-channel transistors gated with HfON and HfSiON are reported as a function of physical thickness (Tphys). HfSiON peak mobility improves with Tphys over the range of 1.8–2.7 nm, achieving 260 cm2/V s at 2.7 nm. However, HfSiON mobility degrades at a critical thickness, Tphys ≥ 3.5 nm. HfON mobility response is different. It is a maximum (230 cm2/V s) at Tphys = 1.2 nm but degrades with increasing thickness, particularly for the critical thickness ≥ 2.5 nm. Mobility loss and trapping occur concurrently for both dielectrics when these critical thicknesses are exceeded. These critical thicknesses are the minimum required to achieve dielectric crystallization. Interfacial defects along crystalline grain boundaries may negatively impact electrical performance of both dielectrics.
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85.30.Tv Field effect devices

Dielectric losses of SrTiO3 thin film capacitors with Pt bottom electrodes at frequencies up to 1 GHz

Nicholas H. Finstrom, John A. Gannon, Nadia K. Pervez, Robert A. York, and Susanne Stemmer

Appl. Phys. Lett. 89, 242910 (2006); http://dx.doi.org/10.1063/1.2405381 (3 pages) | Cited 5 times

Online Publication Date: 13 December 2006

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The letter reports on the dielectric losses of differently textured SrTiO3 films on Pt bottom electrodes at frequencies between 1 MHz and 1 GHz. Device parasitic contributions to the measured device losses were partially removed by measuring shorted devices. Different dielectric loss mechanisms were identified. These included strongly frequency dependent loss peaks and a low temperature loss increase that showed a power-law dependence on the bulk permittivity of the films. Possible origins of the different loss mechanisms are discussed.
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84.32.Tt Capacitors

Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

C.-H. Chang, Y.-K. Chiou, Y.-C. Chang, K.-Y. Lee, T.-D. Lin, T.-B. Wu, M. Hong, and J. Kwo

Appl. Phys. Lett. 89, 242911 (2006); http://dx.doi.org/10.1063/1.2405387 (3 pages) | Cited 48 times

Online Publication Date: 13 December 2006

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An interfacial self-cleaning phenomenon was found in the atomic layer deposition of HfO2 on In0.15Ga0.85As/GaAs substrate using Hf(NCH3C2H5)4, i.e., TEMAH, and H2O as the precursors. The native oxides of InGaAs were all satisfactorily removed from the interface through ligand exchange (substitution) reactions with the TEMAH precursor. It relieves the Fermi-level pinning in the HfO2/InGaAs heterostructure, as verified by the clear transition from accumulation to depletion in high-frequency capacitance-voltage relations and inversion in quasistatic measurement. A very low leakage current was also found from the metal-oxide-semiconductor capacitors of Au/Ti/HfO2/InGaAs.
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81.65.Cf Surface cleaning, etching, patterning
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
77.55.-g Dielectric thin films
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
84.32.Tt Capacitors

Giant electrocaloric effect in the thin film relaxor ferroelectric 0.9 PbMg1/3Nb2/3O3–0.1 PbTiO3 near room temperature

A. S. Mischenko, Q. Zhang, R. W. Whatmore, J. F. Scott, and N. D. Mathur

Appl. Phys. Lett. 89, 242912 (2006); http://dx.doi.org/10.1063/1.2405889 (3 pages) | Cited 87 times

Online Publication Date: 13 December 2006

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The authors have recently observed a giant electrocaloric effect (12 K in 25 V) in 350 nm sol-gel PbZr0.95Ti0.05O3 films near the ferroelectric Curie temperature of 242 °C. Here the authors demonstrate a giant electrocaloric effect (5 K in 25 V) in 260 nm sol-gel films of the relaxor ferroelectric 0.9 PbMg1/3Nb2/3O3–0.1 PbTiO3 near the Curie temperature of 60 °C. This reduction in operating temperature widens the potential for applications in cooling systems.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.70.+a Pyroelectric and electrocaloric effects
77.65.-j Piezoelectricity and electromechanical effects
77.80.B- Phase transitions and Curie point

Sheet geometry enhanced giant piezoelectric coefficients

Wan Y. Shih, Hongyu Luo, Huidong Li, Christian Martorano, and Wei-Heng Shih

Appl. Phys. Lett. 89, 242913 (2006); http://dx.doi.org/10.1063/1.2408633 (3 pages) | Cited 12 times

Online Publication Date: 13 December 2006

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The authors report a giant piezoelectric coefficient, −d31 = 2000 pm/V in substrate-free polycrystalline (Pb(Mg1/3Nb2/3)O3)0.63(PbTiO3)0.37 (PMN-37PT) sheets at E ≥ 7 kV/cm, larger than the −d31 = 930 pm/V exhibited by specially cut commercial PMN-PT single crystals and 300–500 pm/V of polycrystalline bulk PMN-37PT. X-ray diffraction indicated due to the thin sheet geometry the present PMN-37PT sheets contained about 60 vol % of the tetragonal a and rhombohedral domains even after poling. At large fields, these tetragonal a and rhombohedral domains switched to the tetragonal c domains to result in the giant d31 enhancement at high fields.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Effect of Nd dopant on magnetic and electric properties of BiFeO3 thin films prepared by metal organic deposition method

Fengzhen Huang, Xiaomei Lu, Weiwei Lin, Xiumei Wu, Yi Kan, and Jinsong Zhu

Appl. Phys. Lett. 89, 242914 (2006); http://dx.doi.org/10.1063/1.2404942 (3 pages) | Cited 72 times

Online Publication Date: 14 December 2006

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Polycrystalline Bi1−xNdxFeO3 (x = 0–0.15) thin films were prepared on (111) Pt/Ti/SiO2/Si substrates via metal organic deposition method. The effect of Nd dopant on the structural, electric, and magnetic properties was studied. It was found that the ferroelectric polarization and saturation magnetization of the films were enhanced by appropriate Nd doping due to the structural distortion and the suppressed cycloidal spin structure. Meanwhile, Nd-doped BiFeO3 thin films exhibited magnetic anisotropy because of the magnetocrystalline anisotropy.
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75.70.Ak Magnetic properties of monolayers and thin films
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
75.30.Gw Magnetic anisotropy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Optimized dielectric properties of SrTiO3:Nb/SrTiO3 (001) films for high field effect charge densities

Xiuyu Cai, C. Daniel Frisbie, and C. Leighton

Appl. Phys. Lett. 89, 242915 (2006); http://dx.doi.org/10.1063/1.2404610 (3 pages) | Cited 3 times

Online Publication Date: 14 December 2006

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The authors report the growth, structural and electrical characterizations of SrTiO3 films deposited on conductive SrTiO3:Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼ 200 (for a thickness of 1150 Å). The breakdown fields in SrTiO3:Nb/SrTiO3/Ag capacitors are consistent with induced charge densities >1×1014 cm−2 for both holes and electrons, making these films ideal for high charge density field effect devices.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects
73.50.Fq High-field and nonlinear effects
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
81.15.Kk Vapor phase epitaxy; growth from vapor phase
84.32.Tt Capacitors

Defect control for polarization switching in Bi2WO6-based single crystals

Yuji Noguchi, Koichiro Murata, and Masaru Miyayama

Appl. Phys. Lett. 89, 242916 (2006); http://dx.doi.org/10.1063/1.2405408 (3 pages) | Cited 15 times

Online Publication Date: 15 December 2006

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The authors have investigated the leakage current mechanism and polarization properties of Bi2WO6 single crystals along the a axis at 25 °C. High-pressure oxygen annealing led to a decrease in leakage current, showing that electron is a detrimental carrier of the leakage current property. It is demonstrated that 2 mol % Mn substitution at the W site is effective for decreasing the leakage current density to the order of 10−8 A/cm2. Mn-doped crystals show a saturated polarization hysteresis loop with a remanent polarization of 50 μC/cm2. Electron spin resonance analysis suggests that Mn3+ acts as an electron acceptor for reducing the leakage current in the Bi2WO6 system.
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77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
81.40.Gh Other heat and thermomechanical treatments
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