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11 Dec 2006

Volume 89, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 89, 242109 (2006); http://dx.doi.org/10.1063/1.2405843 (3 pages)

Carlo R. da Cunha, Nobuyuki Aoki, Takahiro Morimoto, Yuichi Ochiai, Richard Akis, and David K. Ferry
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Nanostructured magnetic Fe–Ni–Co/Teflon multilayers for high-frequency applications in the gigahertz range

Henry Greve, Christian Pochstein, Haile Takele, Vladimir Zaporojtchenko, Franz Faupel, Andreas Gerber, Michael Frommberger, and Eckhard Quandt

Appl. Phys. Lett. 89, 242501 (2006); http://dx.doi.org/10.1063/1.2402877 (3 pages) | Cited 21 times

Online Publication Date: 11 December 2006

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Thin multilayer films of sputtered polytetrafluoroethylene (Teflon) and Fe54Ni27Co19 with different layer thicknesses were prepared by vapor-phase tandem deposition. The films show ferromagnetic resonance frequencies from 3.0 to 4.7 GHz and a high-frequency permeability in the range from 100 to 175, while having negligible losses up to 700 MHz and a quality factor Q up to 12 at 1 GHz. Thus these films could be promising candidates as high-frequency components used, for example, in mobile communication electronics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Tt Fine-particle systems; nanocrystalline materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
84.40.-x Radiowave and microwave (including millimeter wave) technology

Enhanced low-temperature magnetoresistance in facing-target reactive sputtered Ni–CNx composite films

X. C. Wang, W. B. Mi, E. Y. Jiang, and H. L. Bai

Appl. Phys. Lett. 89, 242502 (2006); http://dx.doi.org/10.1063/1.2408632 (3 pages) | Cited 6 times

Online Publication Date: 11 December 2006

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Ni–CNx films with ∼ 23 at. % Ni, fabricated using facing-target reactive sputtering, are composed of metallic Ni, Ni–N, Ni–C, and CN compounds, showing the morphology of ∼ 1–5 nm Ni-rich particles embedded in amorphous CN matrix. The films exhibit superparamagnetism with an average blocking temperature of ∼ 100 K. Below 20 K the tunneling magnetoresistance MR = [R(H)−R(0)]/R(0) increases rapidly, following log∣MR∣∝−T relation with decreasing temperature. By optimizing the nitrogen partial pressure, the 3 K MR maximum can reach −59% at 90 kOe field, which can be mainly ascribed to the high-order tunneling process.
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75.47.-m Magnetotransport phenomena; materials for magnetotransport
75.70.Ak Magnetic properties of monolayers and thin films
75.20.-g Diamagnetism, paramagnetism, and superparamagnetism
75.50.Tt Fine-particle systems; nanocrystalline materials
68.55.-a Thin film structure and morphology

Superconducting fault current limiter device based on (Hg,Re)-1223 superconductor

C. A. C. Passos, M. T. D. Orlando, J. L. Passamai, E. F. Medeiros, F. D. C. Oliveira, J. F. Fardin, and D. S. L. Simonetti

Appl. Phys. Lett. 89, 242503 (2006); http://dx.doi.org/10.1063/1.2408637 (3 pages) | Cited 1 time

Online Publication Date: 11 December 2006

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A preliminary study of a small superconducting current limiter device based on Hg0.8Re0.2Ba2Ca2Cu3O8+δ, (Hg,Re)-1223 ceramic is described. A fault current test at 60 Hz confirmed a reduction in the density of current value, from 1.55×102 to 0.82×102 Apeak/cm2. The prospective/limited density of current ratio observed was ∼ 1.9 for a 0.24 cm thick sample, without any damage to the (Hg,Re)-1223 superconductor. A recovery test indicated that the polycrystalline sample kept its superconducting properties and had not shown modifications in its stoichiometry. In conclusion, (Hg,Re)-1223 can be used to build superconducting fault current limiter devices.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
84.30.Jc Power electronics; power supply circuits

Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition

X. Y. Qiu, Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu

Appl. Phys. Lett. 89, 242504 (2006); http://dx.doi.org/10.1063/1.2405883 (3 pages) | Cited 5 times

Online Publication Date: 13 December 2006

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The room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition on various substrates in oxygen-defective ambient is demonstrated. The magnetization is independent of film thickness, but depends on substrates and deposition temperatures. A magnetic moment of ∼ 0.26μB per HfAlOx f.u. is recorded for HfAlOx films deposited under optimized conditions [deposited at 600 °C on (001) sapphire in high vacuum]. It is argued that interfacial defects are one of the possible sources of the weak ferromagnetism.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Cr Saturation moments and magnetic susceptibilities

Stress dependence of ferromagnetic resonance and magnetic anisotropy in a thin NiMnSb film on InP(001)

Bernhard Botters, Fabian Giesen, Jan Podbielski, Peter Bach, Georg Schmidt, Laurens W. Molenkamp, and Dirk Grundler

Appl. Phys. Lett. 89, 242505 (2006); http://dx.doi.org/10.1063/1.2405885 (3 pages) | Cited 17 times

Online Publication Date: 13 December 2006

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The authors have investigated the effect of stress on the room-temperature magnetism of a 10 nm thick Heusler-alloy film NiMnSb grown epitaxially on InP. Tensile stress, which the authors applied externally along the easy axis using a piezostack, is shown to reduce the coercivity and the anisotropy coefficient. Using broadband ferromagnetic resonance measurements, the authors find that a relative variation in the lattice constant as small as 0.08% changes the in-plane uniaxial anisotropy by 20%. This explains the significant variation of anisotropy with film thickness, which was recently reported for NiMnSb.
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75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
68.55.A- Nucleation and growth

Electric control of room temperature ferromagnetism in a Pb(Zr0.2Ti0.8)O3/La0.85Ba0.15MnO3 field-effect transistor

Teruo Kanki, Hidekazu Tanaka, and Tomoji Kawai

Appl. Phys. Lett. 89, 242506 (2006); http://dx.doi.org/10.1063/1.2405861 (3 pages) | Cited 20 times

Online Publication Date: 14 December 2006

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Spintronics, which takes advantage of both spin and charge degrees of freedom, is a promising key technique relevant to future applications of information and data storage. Ferromagnetic transition metal oxides, including perovskite manganites, represent the most promising materials for use as devices controlling magnetic states by an electric field at high temperature with high efficiency. This is because these materials possess a strong intrinsic relationship between charge and magnetism, showing ferromagnetism above room temperature by adjustment of carrier filling, in addition, particular magnetoelectric properties such as a colossal magnetoresistance phenomenon. Nevertheless, the device operation such a field control of magnetism has not been verified so far in manganites. It is essential to determine whether the magnetism of manganites can be controlled via carriers modulated by an electric field in these applications. Here the authors report on the direct demonstration of a simultaneous change in the magnetic and electric-transport properties in a ferromagnetic oxide field-effect transistor. A working temperature above 293 K was achieved. This result should facilitate the use of spintronic devices in strongly correlated 3d-electron systems working at practical temperatures.
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85.75.Hh Spin polarized field effect transistors

Fe3−xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor

Junichi Takaobushi, Hidekazu Tanaka, Tomoji Kawai, Shigenori Ueda, Jung-Jin Kim, Masaaki Kobata, Eiji Ikenaga, Makina Yabashi, Keisuke Kobayashi, Yoshinori Nishino, Daigo Miwa, Kenji Tamasaku, and Tetsuya Ishikawa

Appl. Phys. Lett. 89, 242507 (2006); http://dx.doi.org/10.1063/1.2405389 (3 pages) | Cited 22 times

Online Publication Date: 15 December 2006

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Epitaxial ferri(ferro)magnetic Fe3−xZnxO4 thin films (x = 0–0.9) were prepared using a pulsed-laser deposition technique. The electrical conductivity and magnetic properties of Fe3−xZnxO4 thin film were systematically modulated for the entire range of Zn substitution. Anomalous Hall coefficient measurements revealed the presence of spin-polarized carriers at room temperature. Valence band spectra obtained by hard x-ray photoemission spectroscopy revealed that the density of states near the Fermi level was reduced with an increasing Zn concentration of x. These results indicate that this system will serve as a tunable ferromagnetic semiconductor with a strong electron correlation.
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75.50.Pp Magnetic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Gg Ferrimagnetics
73.61.Le Other inorganic semiconductors
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