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25 Dec 2006

Volume 89, Issue 26, Articles (26xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 263110 (2006); http://dx.doi.org/10.1063/1.2424541 (3 pages)

Ch. Deneke, U. Zschieschang, H. Klauk, and O. G. Schmidt
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Impact of disorder on high quality factor III-V nitride microcavities

G. Christmann, D. Simeonov, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean

Appl. Phys. Lett. 89, 261101 (2006); http://dx.doi.org/10.1063/1.2420788 (3 pages) | Cited 28 times

Online Publication Date: 26 December 2006

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The authors report on the micron scale characterization of a monolithic GaN microcavity (MC) with lattice matched AlInN/GaN distributed Bragg reflectors by means of a microtransmission setup. This technique allows extracting very high quality factors (Q up to 2800), in accordance with theoretical predictions, contrary to what was previously reported for nitride based MCs. Furthermore, two-dimensional mappings of the MC transmission spectrum allow probing the disorder in this MC. The direct relationship between an increased disorder and a reduction in the Q factor is clearly observed.
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42.82.Gw Other integrated-optical elements and systems
85.60.-q Optoelectronic devices

Nanowire metamaterials with extreme optical anisotropy

Justin Elser, Robyn Wangberg, Viktor A. Podolskiy, and Evgenii E. Narimanov

Appl. Phys. Lett. 89, 261102 (2006); http://dx.doi.org/10.1063/1.2422893 (3 pages) | Cited 42 times

Online Publication Date: 26 December 2006

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The authors study perspectives of nanowire metamaterials for negative-refraction waveguides, high-performance polarizers, and polarization-sensitive biosensors. They demonstrate that the behavior of these composites is strongly influenced by the concentration, distribution, and geometry of the nanowires, derive an analytical description of electromagnetism in anisotropic nanowire-based metamaterials, and explore the limitations of their approach via three-dimensional numerical simulations. Finally, they illustrate the developed approach on the examples of nanowire-based high-energy-density waveguides and nonmagnetic negative-index imaging systems with far-field resolution of one-sixth of vacuum wavelength.
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61.46.-w Structure of nanoscale materials
42.70.-a Optical materials
42.79.Gn Optical waveguides and couplers
87.80.-y Biophysical techniques (research methods)

Three-dimensional self-organization of crystalline gold nanoparticles in amorphous alumina

Chunming Jin, Honghui Zhou, Wei Wei, and Roger Narayan

Appl. Phys. Lett. 89, 261103 (2006); http://dx.doi.org/10.1063/1.2422910 (3 pages) | Cited 4 times

Online Publication Date: 26 December 2006

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Multilayered heterostructures containing gold nanoparticles embedded in amorphous alumina matrices were deposited on silicon (001) substrates using pulsed laser deposition. The three-dimensional ordering of gold nanoparticles within these multilayered heterostructures was investigated using cross-sectional transmission electron microscopy and image Fourier transformation. Self-organization of gold nanoparticles along the vertical direction was observed in films grown at 20 and at 320 °C. Self-organization occurred by means of two different growth modes; both vertically correlated growth (top-on-top) and anticorrelated growth (top-on-middle) mechanisms were observed. The results of these studies suggest that the driving force for vertical ordering in this material is related to the long-range elastic interactions among the nanoparticles within the growing films.
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81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys
81.16.Dn Self-assembly
81.16.Mk Laser-assisted deposition
81.15.Fg Pulsed laser ablation deposition

Femtosecond laser fabrication of apertures on two-dimensional microlens arrays

G. Langer, D. Brodoceanu, and D. Bäuerle

Appl. Phys. Lett. 89, 261104 (2006); http://dx.doi.org/10.1063/1.2423324 (3 pages) | Cited 10 times

Online Publication Date: 26 December 2006

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Two-dimensional lattices of microspheres formed by self-assembly from colloidal solutions can be employed as microlens arrays. With applications in confocal microscopes, some types of parallel laser-surface processing or devices based on anomalous optical transmission, it is useful to improve the imaging properties of microspheres by generating an aperture on each of these lenses. This has been achieved by means of laser-induced forward transfer using femtosecond Ti:sapphire laser radiation. Some of the peculiarities observed in the experiments can be understood on the basis of field intensity calculations.
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42.62.-b Laser applications
42.86.+b Optical workshop techniques
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Bh Lenses, prisms and mirrors
07.60.Pb Conventional optical microscopes

Mask-shift filtering for forming microstructures with irregular profile

Xiaochun Dong, Chunlei Du, Changtao Wang, Qiling Deng, Yudong Zhang, and Xiangang Luo

Appl. Phys. Lett. 89, 261105 (2006); http://dx.doi.org/10.1063/1.2422881 (3 pages) | Cited 1 time

Online Publication Date: 26 December 2006

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A method of mask-shift filtering is presented for forming microstructures with irregular profile. When a three-dimensional (3D) microstructure is quantized to a number of microslices in one direction with equal interval, their two-dimensional average projections are calculated, respectively. A shift filtering mask is constructed by arranging the submasks converted from the corresponding subprojections. Filtering is carried out during exposure by moving the mask in the quantized direction to form a 3D microprofile on resist. The experimental results for forming irregular continuous relief profile in the larger areas are demonstrated and analyzed in this letter.
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42.86.+b Optical workshop techniques
81.16.Nd Micro- and nanolithography

Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser

Jimyung Kim, Myoung-Taek Choi, and Peter J. Delfyett

Appl. Phys. Lett. 89, 261106 (2006); http://dx.doi.org/10.1063/1.2410217 (3 pages) | Cited 11 times

Online Publication Date: 27 December 2006

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The authors generate and compress short pulses via the ground and excited state transitions from a passively mode-locked grating coupled quantum dot two-section diode laser at a repetition rate of 2.7 GHz. The selection and isolation of either the ground state or excited state transition were performed by an angle tuning of the grating. The externally compressed pulse widths are 970 fs from the ground state and 1.2 ps from the excited state transition. The sign of the chirp is up chirped for both state transitions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Dj Gratings

Demonstrated fossil-fuel-free energy cycle using magnesium and laser

T. Yabe, S. Uchida, K. Ikuta, K. Yoshida, C. Baasandash, M. S. Mohamed, Y. Sakurai, Y. Ogata, M. Tuji, Y. Mori, Y. Satoh, T. Ohkubo, M. Murahara, A. Ikesue, M. Nakatsuka, et al.

Appl. Phys. Lett. 89, 261107 (2006); http://dx.doi.org/10.1063/1.2423320 (3 pages) | Cited 21 times

Online Publication Date: 27 December 2006

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The authors propose an energy cycle based on a renewable fuel. Magnesium is chosen as an energy carrier and is combusted with water to retrieve energy using many power devices. MgO, the combustion residue, is reduced back to Mg by laser radiation generated from solar and other renewable energy sources. They have achieved an energy recovery efficiency of 42.5% for converting MgO to magnesium, using a laser. Combined with a demonstrated 38% efficiency for converting an artificial sunlight source (metal halide lamp) into laser output energy indicates that the proposed energy cycle is already in a feasible range for practical use.
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84.60.Bk Performance characteristics of energy conversion systems; figure of merit
88.40.-j Solar energy

Goos-Hänchen shift surface plasmon resonance sensor

Xiaobo Yin and Lambertus Hesselink

Appl. Phys. Lett. 89, 261108 (2006); http://dx.doi.org/10.1063/1.2424277 (3 pages) | Cited 39 times

Online Publication Date: 27 December 2006

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A high resolution surface plasmon resonance sensor is proposed and demonstrated by measuring the plasmon resonance enhanced Goos-Hänchen effect at attenuated total internal reflection. The giant Goos-Hänchen shift results from the singular phase retardation at the resonance which leads to the superior sensitivity of the sensor.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces

Brownian noise in radiation-pressure-driven micromechanical oscillators

Hossein Rokhsari, Mani Hossein-Zadeh, Ali Hajimiri, and Kerry Vahala

Appl. Phys. Lett. 89, 261109 (2006); http://dx.doi.org/10.1063/1.2424276 (3 pages) | Cited 4 times

Online Publication Date: 27 December 2006

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The authors demonstrate Brownian-noise-limited operation of an optomechanical oscillator, wherein mechanical oscillations of a silica optical microcavity are sustained by means of radiation pressure. Using phase noise measurement above threshold, it has been shown that the short-term linewidth of mechanical oscillations is fundamentally broadened, limited by thermal equipartition of energy.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
05.40.Jc Brownian motion
05.40.Ca Noise

Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1−xNx/GaAs (x<1%) stepped quantum well

A. C. H. Lim, R. Gupta, S. K. Haywood, M. J. Steer, M. Hopkinson, and G. Hill

Appl. Phys. Lett. 89, 261110 (2006); http://dx.doi.org/10.1063/1.2424278 (3 pages) | Cited 2 times

Online Publication Date: 28 December 2006

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The authors present room temperature photoluminescence and photocurrent measurements on a three layer GaAsN/GaAs/Al0.35Ga0.65As (N ⩽ 1%) stepped quantum well. A blueshift in the ground state transition energy is observed with the application of an electric field. A net blueshift of >10 meV was obtained at 40 kV/cm. These results suggest a type II band lineup in the GaAsN/GaAs heterojunction for nitrogen compositions below 1%.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
73.63.Hs Quantum wells
71.35.-y Excitons and related phenomena
72.40.+w Photoconduction and photovoltaic effects
68.65.Fg Quantum wells

Photorefractive effect in relaxor ferroelectric 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 single crystal

Chongjun He, Zhongxiang Zhou, Dajun Liu, Xiangyong Zhao, and Haosu Luo

Appl. Phys. Lett. 89, 261111 (2006); http://dx.doi.org/10.1063/1.2424669 (3 pages) | Cited 3 times

Online Publication Date: 28 December 2006

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The photorefractive properties of 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 single crystals have been investigated by the two-wave mixing experiment. The maximal gain coefficient is 5.4 cm−1, the effective trap density is 1.2×1016 cm−3, and the normalized photorefractive response time under 1 W/cm2 illumination is 1.5 s at a wavelength of 632.8 nm. The dominant charge carrier was identified as holes from the direction of two-wave mixing energy transfer.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.-e Optical properties of bulk materials and thin films
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection

J. Salfi, U. Philipose, C. F. de Sousa, S. Aouba, and H. E. Ruda

Appl. Phys. Lett. 89, 261112 (2006); http://dx.doi.org/10.1063/1.2424653 (3 pages) | Cited 31 times

Online Publication Date: 28 December 2006

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Multilayer Ti/Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80 nm nominal diameter. Four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ti/Au contacts is 0.024 Ω cm2 and intrinsic resistivity of the nanowires is approximately 1 Ω cm. The authors have also measured the spectral photocurrent responsivity of a ZnSe nanowire with 2.0 V bias across Ti/Au electrodes, which exhibits a turnon for wavelengths shorter than 470 nm and reaches 22 A/W for optical excitation at 400 nm.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
73.63.Rt Nanoscale contacts
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.63.Nm Quantum wires
85.30.De Semiconductor-device characterization, design, and modeling

Evanescent wave magnetometer

K. F. Zhao and Z. Wu

Appl. Phys. Lett. 89, 261113 (2006); http://dx.doi.org/10.1063/1.2424657 (3 pages) | Cited 12 times

Online Publication Date: 28 December 2006

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The authors describe an atomic magnetometer, the evanescent wave magnetometer, which uses an evanescent wave to measure the Larmor frequency of Rb atoms near the cell surface. The submicron penetration depth of the probe beam allows the evanescent wave magnetometer to achieve a spatial resolution of several tens of microns or better, and greatly reduces the inhomogeneous broadeningdue to magnetic field inhomogeneities. Its noise density in the present experiment is ∼ 100 pT/mathfor frequencies between 1 and 10 mHz, and decreases to less than 10 pT/math as the frequency increases to 25 Hz.
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07.55.Ge Magnetometers for magnetic field measurements
32.60.+i Zeeman and Stark effects

Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique

Koji Kawasaki, Choshiro Koike, Yoshinobu Aoyagi, and Misaichi Takeuchi

Appl. Phys. Lett. 89, 261114 (2006); http://dx.doi.org/10.1063/1.2424668 (3 pages) | Cited 12 times

Online Publication Date: 28 December 2006

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A vertical AlGaN deep ultraviolet (DUV) light emitting diode (LED) emitting at 322 nm was fabfricated by the laser lift-off technique. The emission area extended to the entire electrode uniformly, and the current crowding was suppressed effectively in the devices. As a result, the differential conductance of the vertical LED was improved by a factor of 5 and the operation voltage was reduced to half, compared to that of the lateral LED. The self-heating effect was effectively suppressed even at high-current-density operation. The vertical structure in the high resistive AlGaN LED has potential application in high-power AlGaN DUV devices.
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85.60.Jb Light-emitting devices
42.72.Bj Visible and ultraviolet sources
42.62.-b Laser applications

Phase locking of a frequency agile laser

Vincent Crozatier, Guillaume Gorju, Fabien Bretenaker, Jean-Louis Le Gouët, Ivan Lorgeré, Claude Gagnol, and Eric Ducloux

Appl. Phys. Lett. 89, 261115 (2006); http://dx.doi.org/10.1063/1.2424659 (3 pages) | Cited 8 times

Online Publication Date: 28 December 2006

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The authors report on the development and phase locking of a frequency agile laser. The use of a simple unbalanced Mach-Zehnder interferometer together with a wideband phase-locked loop permits to control very fast frequency chirps (up to 3 GHz in 5 μs) with an excellent precision (frequency error less than 100 kHz). The servoloop could be applied to many tunable lasers.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Ah General laser theory
07.60.Ly Interferometers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Phase-sensitive detection in Raman tweezers

G. Rusciano, A. C. De Luca, A. Sasso, and G. Pesce

Appl. Phys. Lett. 89, 261116 (2006); http://dx.doi.org/10.1063/1.2424674 (3 pages) | Cited 8 times

Online Publication Date: 28 December 2006

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The authors discuss on a method to acquire the Raman spectrum of a single optically trapped particle. The method makes use of two laser beams: the first laser traps the particle and moves it back and forth in a plane perpendicular to the laser beam propagation; a second laser acts as Raman probe and it is fixed in space. The Raman spectrum is obtained by phase detecting the backscattered Raman photons using a lock-in amplifier. Within this approach, the background due to the scattering of the environment is completely removed. The authors apply this method to 4.25 μm diameter polystyrene beads in aqueous solution.
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07.60.-j Optical instruments and equipment
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

First-principles modeling of nonlinear optical properties of C3N4 polymorphs

Jianming Hu, Wendan Cheng, Shuping Huang, Dongsheng Wu, and Zhi Xie

Appl. Phys. Lett. 89, 261117 (2006); http://dx.doi.org/10.1063/1.2402889 (3 pages) | Cited 4 times

Online Publication Date: 29 December 2006

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Using the first-principles method combined with the anharmonic oscillator model, the electronic, linear, and nonlinear optical properties of four C3N4 polymorphs are investigated. The calculations show that the third-order susceptibilities and nonlinear refractive indices increase with the increase of volume of C3N4 polymorphs below 1.5 eV, whereas the plasmon frequencies and relativistic nonlinear refractive indices decrease. The obtained results indicate that the spinel C3N4 has some potential applications in nonlinear optics.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Efficient solid-state host-guest light-emitting electrochemical cells based on cationic transition metal complexes

Hai-Ching Su, Chung-Chih Wu, Fu-Chuan Fang, and Ken-Tsung Wong

Appl. Phys. Lett. 89, 261118 (2006); http://dx.doi.org/10.1063/1.2425008 (3 pages) | Cited 34 times

Online Publication Date: 29 December 2006

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The authors demonstrate highly efficient solid-state light-emitting electrochemical cells (LECs) consisting of green-emitting [Ir(dFppy)2(SB)]+(PF6) as the host and orange-emitting [Ir(ppy)2(SB)]+(PF6) as the guest [where dFppy is 2-(2,4-difluorophenyl)pyridine, SB is 4,5-diaza-9,9′-spirobifluorene, and ppy is 2-phenylpyridine]. Photophysical studies show that with the optimized host-guest compositions, the emission is mainly from the guest and photoluminescence quantum yields are largely enhanced over those of pure host and guest films due to suppressed intermolecular interactions. Correspondingly, LECs based on such host-guest cationic complex systems show substantially enhanced quantum efficiencies (power efficiencies) of up to 10.4% (36.8 lm/W), representing a 1.5 times enhancement compared to those of pure host and guest devices. Such results indicate that the host-guest system is essential and useful for achieving highly efficient solid-state LECs.
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85.60.Jb Light-emitting devices
82.47.-a Applied electrochemistry

Beam splitting with a modified metallic nano-optic lens

Zhijun Sun

Appl. Phys. Lett. 89, 261119 (2006); http://dx.doi.org/10.1063/1.2425049 (3 pages) | Cited 15 times

Online Publication Date: 29 December 2006

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In this letter, the authors show with finite-difference time-domain simulations the beam splitting of a metallic nano-optic lens structure modified by loading a metal block adjacent to the nanoslits. A model that considers the nearby space between the metal block and metallic lens as an equivalent surface-plasmon-waves-coupled subwavelength cavity is proposed. In the model, bound surface plasmon mode evolves into unbound free space mode with widening of the cavity, and conditional diffraction of optical wave through the lateral openings (size ∼ wavelength) of the cavity leads to shaping of split beams in the intermediate zone.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Bh Lenses, prisms and mirrors
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Scaling laws for dielectric window breakdown in vacuum and collisional regimes

Y. Y. Lau, J. P. Verboncoeur, and H. C. Kim

Appl. Phys. Lett. 89, 261501 (2006); http://dx.doi.org/10.1063/1.2425025 (3 pages) | Cited 17 times

Online Publication Date: 29 December 2006

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The scaling laws for the initiation time of radio frequency (rf) window breakdown are constructed for three gases: Ar, Xe, and Ne. They apply to the vacuum, to the multipactor-triggered regime, and to the collisional rf plasma regime, and they are corroborated by computer simulations of these three gases over a wide range of pressures. This work elucidates the key factors that are needed for the prediction of rf window breakdown in complex gases, such as air, at various pressures.
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52.80.Vp Discharge in vacuum
52.80.Pi High-frequency and RF discharges
52.20.Fs Electron collisions
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions

Frequency coupling in dual frequency capacitively coupled radio-frequency plasmas

T. Gans, J. Schulze, D. O’Connell, U. Czarnetzki, R. Faulkner, A. R. Ellingboe, and M. M. Turner

Appl. Phys. Lett. 89, 261502 (2006); http://dx.doi.org/10.1063/1.2425044 (3 pages) | Cited 57 times

Online Publication Date: 29 December 2006

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An industrial, confined, dual frequency, capacitively coupled, radio-frequency plasma etch reactor (Exelan®, Lam Research) has been modified for spatially resolved optical measurements. Space and phase resolved optical emission spectroscopy yields insight into the dynamics of the discharge. A strong coupling of the two frequencies is observed in the emission profiles. Consequently, the ionization dynamics, probed through excitation, is determined by both frequencies. The control of plasma density by the high frequency is, therefore, also influenced by the low frequency. Hence, separate control of plasma density and ion energy is rather complex.
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52.50.Dg Plasma sources
52.80.Pi High-frequency and RF discharges
52.77.Bn Etching and cleaning
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Jm Ionization of plasmas

Xenon ion beam characterization in a helicon double layer thruster

C. Charles, R. W. Boswell, and M. A. Lieberman

Appl. Phys. Lett. 89, 261503 (2006); http://dx.doi.org/10.1063/1.2426881 (3 pages) | Cited 34 times

Online Publication Date: 29 December 2006

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A current-free electric double layer is created in a helicon double layer thruster operating with xenon and compared to a recently developed theory. The Xe+ ion beam formed by acceleration through the potential drop of the double layer is characterized radially using an electrostatic ion energy analyzer. For operating conditions of 500 W rf power, 0.07 mTorr gas pressure, and a maximum magnetic field of 125 G, the measured beam velocity is about 6 km s−1, the beam area is about 150 cm2, and the measured beam divergence is less than 6°.
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52.75.Di Ion and plasma propulsion
52.40.Kh Plasma sheaths
52.40.Mj Particle beam interactions in plasmas
52.70.Nc Particle measurements
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Compression behavior of nanosized nickel and molybdenum

Selva Vennila. R, Shrinivas R. Kulkarni, Surendra K. Saxena, Hans-Peter Liermann, and Stanislav V. Sinogeikin

Appl. Phys. Lett. 89, 261901 (2006); http://dx.doi.org/10.1063/1.2422886 (3 pages) | Cited 8 times

Online Publication Date: 26 December 2006

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X-ray diffraction studies of nanomolybdenum and nanonickel were conducted using a synchrotron source under nonhydrostatic compression up to pressures of 37 and 56 GPa, respectively. No phase transitions were found up to the maximum pressure studied. Bulk modulus and its pressure derivative were calculated from the pressure-volume data using the third-order Birch-Murnaghan equation of state. A decrease in compressibility in both systems with decrease in particle size has been observed. Compressibility behavior in nanometals studied is similar to the effect explained by Hall [Proc. Phys. Soc. London, Sect. B 64, 747 (1951) ] and Petch [J. Iron Steel Inst., London 174, 25 (1953) ].
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62.25.-g Mechanical properties of nanoscale systems
81.40.Lm Deformation, plasticity, and creep
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
62.20.F- Deformation and plasticity
64.30.-t Equations of state of specific substances

Temperature response of math atoms in amorphized 6HSiC

W. Jiang, Y. Zhang, V. Shutthanandan, S. Thevuthasan, and W. J. Weber

Appl. Phys. Lett. 89, 261902 (2006); http://dx.doi.org/10.1063/1.2422892 (3 pages) | Cited 4 times

Online Publication Date: 26 December 2006

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Implantation of math ions was employed to produce a concentration profile in 6HSiC at 140 K. In situ study of math-implanted species was performed using the resonant reaction of math(p,γ)math at Ep = 1.748 MeV. Significant math diffusion in the amorphized SiC does not occur up to 1130 K. The presence of Au implants (1.9 at. %) does not affect the math behavior. High-energy H+ irradiation also does not promote the math diffusion. The results suggest that C atoms are readily trapped locally in the SiC structure during disordering, which is important in understanding the amorphization and recrystallization processes in SiC.
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61.72.up Other materials
66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Molecular beam epitaxy of phase pure cubic InN

J. Schörmann, D. J. As, K. Lischka, P. Schley, R. Goldhahn, S. F. Li, W. Löffler, M. Hetterich, and H. Kalt

Appl. Phys. Lett. 89, 261903 (2006); http://dx.doi.org/10.1063/1.2422913 (3 pages) | Cited 27 times

Online Publication Date: 26 December 2006

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Cubic InN layers were grown by plasma assisted molecular beam epitaxy on 3C-SiC (001) substrates at growth temperatures from 419 to 490 °C. X-ray diffraction investigations show that the layers have zinc blende structure with only a small fraction of wurtzite phase inclusions on the (111) facets of the cubic layer. The full width at half maximum of the c-InN (002) x-ray rocking curve is less than 50 arc min. The lattice constant is 5.01±0.01 Å. Low temperature photoluminescence measurements yield a c-InN band gap of 0.61 eV. At room temperature the band gap is about 0.56 eV and the free electron concentration is about n ∼ 1.7×1019 cm−3.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
68.55.-a Thin film structure and morphology
71.20.Nr Semiconductor compounds
52.77.Dq Plasma-based ion implantation and deposition
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