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10 Jul 2006

Volume 89, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 023901 (2006); http://dx.doi.org/10.1063/1.2219984 (3 pages)

Nikhil Ganesh, Ian D. Block, and Brian T. Cunningham
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Analysis of the charge transport in π-conjugated materials using generalized Langevin equation

Seong Hyun Kim, Sang Chul Lim, Jung Hun Lee, Chan Hoi Ku, Jae Bon Koo, Yong Suk Yang, and Taehyoung Zyung

Appl. Phys. Lett. 89, 022101 (2006); http://dx.doi.org/10.1063/1.2219993 (3 pages)

Online Publication Date: 10 July 2006

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The complex dielectric constants of several π-conjugated materials are measured, and generalized Langevin equation is used to analyze the dielectric behavior in the frequency domain. From the results of a fitting of the experimental data, all of the dielectric behaviors are well interpreted by the generalized Langevin equation which strongly suggests that the mechanism of the charge carrier transport in π-conjugated organic and polymeric materials is diffusion at dc and low frequencies and an oscillatory motion at (or near) phonon frequencies, and in between, a mixed mode of these two mechanisms.
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73.61.Ph Polymers; organic compounds
77.22.Ch Permittivity (dielectric function)
66.30.-h Diffusion in solids
63.50.-x Vibrational states in disordered systems

Circular dichroism in second harmonic generation from oxidized Si (001)

Xiaoqin Li, J. Willits, S. T. Cundiff, I. M. P. Aarts, A. A E. Stevens, and D. S. Dessau

Appl. Phys. Lett. 89, 022102 (2006); http://dx.doi.org/10.1063/1.2220014 (3 pages) | Cited 4 times

Online Publication Date: 10 July 2006

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Circular dichroism in second harmonic generation (SHG) is often related to molecules and materials with chiral structures. In this letter, we report circular dichroism in SHG from anisotropic achiral oxidized Si (001) at room temperature. The dichroism value depends on the azimuthal angles of the crystal axes. Due to the simple nonlinear susceptibility elements involved, we were able to attribute the dichroism in SHG to interference between particular terms of the bulk electric quadrupole and surface dipole contributions. The presence of a phase shift between the bulk and surface SHG is required to observe circular dichroism.
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78.20.Fm Birefringence
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ek Optical activity
42.65.An Optical susceptibility, hyperpolarizability

Nanoscale carrier transport in Ti/Al/Ni/Au Ohmic contacts on AlGaN epilayers grown on Si(111)

F. Roccaforte, F. Iucolano, F. Giannazzo, A. Alberti, and V. Raineri

Appl. Phys. Lett. 89, 022103 (2006); http://dx.doi.org/10.1063/1.2220486 (3 pages) | Cited 16 times

Online Publication Date: 10 July 2006

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In this letter, a correlation between nanostructure and current flow in Ti/Al/Ni/Au Ohmic contacts on AlGaN films grown on Si(111) is reported. A cross correlation between conductive-atomic force microscopy and structural analyses (x-ray diffraction, transmission electron microscopy) demonstrates that the structure and the electrical properties of the different phases formed inside the reacted layer upon annealing are crucial for the nanoscale current transport. The experimental measurement of the resistivity of the main phases formed upon annealing (AlNi, AlAu4, and Al2Au) indicated that the low resistivity Al2Au phase provides preferential conductive paths for the current flow through the contact.
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73.40.Ns Metal-nonmetal contacts
73.63.-b Electronic transport in nanoscale materials and structures
73.61.Ey III-V semiconductors
61.46.-w Structure of nanoscale materials
61.72.Cc Kinetics of defect formation and annealing
68.37.Ps Atomic force microscopy (AFM)

Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias

Seung-Ik Jun, Philip D. Rack, Timothy E. McKnight, Anatoli V. Melechko, and Michael L. Simpson

Appl. Phys. Lett. 89, 022104 (2006); http://dx.doi.org/10.1063/1.2219136 (3 pages) | Cited 2 times

Online Publication Date: 10 July 2006

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The crystallization properties of amorphous silicon (a-Si) thin film deposited by rf magnetron sputter deposition with substrate bias have been thoroughly characterized. The crystallization kinetics for films deposited with substrate bias is enhanced relative to unbiased a-Si by films. The enhanced crystallization for substrate biased a-Si films are attributed to ion enhanced nucleation of crystallites during sputter deposition which subsequently grow during the postdeposition anneal. Conversely films sputter deposited without substrate bias have more intrinsic defects and residual oxygen which enhance nucleation and retard growth, respectively, and lead to a large number of small crystallites.
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64.70.K- Solid-solid transitions
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
64.60.Q- Nucleation
61.72.Cc Kinetics of defect formation and annealing

Thermal stability and band alignments for Ge3N4 dielectrics on Ge

S. J. Wang, J. W. Chai, J. S. Pan, and A. C. H. Huan

Appl. Phys. Lett. 89, 022105 (2006); http://dx.doi.org/10.1063/1.2220531 (3 pages) | Cited 28 times

Online Publication Date: 10 July 2006

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Ge3N4 dielectrics were prepared on Ge surface by in situ direct atomic source nitridation. The thermal stability and band alignments for Ge3N4/Ge interfaces have been studied by using high-resolution x-ray photoemission spectroscopy. The in situ thermal treatment shows that Ge3N4 film has higher temperature thermal stability up to 550 °C in vacuum. The conduction- and valence-band offsets at Ge3N4/Ge interface are quite asymmetrical with the values of 2.22 and 1.11 eV, respectively.
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77.55.-g Dielectric thin films
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Hysteresis phenomena in reverse biased InAsSbP/InAs heterostructure

Stéphane Rathgeb, Jean-Pierre Moeglin, Alain Boffy, Marcel Pasquinelli, and Olivier Palais

Appl. Phys. Lett. 89, 022106 (2006); http://dx.doi.org/10.1063/1.2220532 (3 pages)

Online Publication Date: 10 July 2006

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We present experimental and theoretical results on InAsSbP/InAs photodetectors for infrared detection. An unexpected hysteresis has been shown during the current-voltage I(V) investigations (300 K). Drastic changes in the hysteresis cycle are observed depending on the temperature of the heterostructure. Additionally, the time step of the measurements has an influence on the hysteresis form. The appearance of such hysteresis can be explained by a tunneling effect and by considering the temperature of the structure. Experimental I(V) characteristics are in good agreement with the tunnel current coupled to a thermal approach.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Origin of the red luminescence in Mg-doped GaN

S. Zeng, G. N. Aliev, D. Wolverson, J. J. Davies, S. J. Bingham, D. A. Abdulmalik, P. G. Coleman, T. Wang, and P. J. Parbrook

Appl. Phys. Lett. 89, 022107 (2006); http://dx.doi.org/10.1063/1.2220552 (3 pages) | Cited 9 times

Online Publication Date: 10 July 2006

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Optically detected magnetic resonance and positron annihilation spectroscopy experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the combined experiments reveal a strong correlation between the vacancy concentrations and the intensity of the red photoluminescence band at 1.8 eV. The analysis provides strong evidence that the emission is due to recombination in which electrons both from effective-mass donors and from deeper donors recombine with deep centers, the deep centers being vacancy-related defects.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals
78.70.Bj Positron annihilation
61.72.J- Point defects and defect clusters

Radiative recombination and ultralong exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation

Yongchun Zhong, Kam Sing Wong, Weili Zhang, and D. C. Look

Appl. Phys. Lett. 89, 022108 (2006); http://dx.doi.org/10.1063/1.2219399 (3 pages) | Cited 15 times

Online Publication Date: 10 July 2006

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We have measured the photoluminescence (PL) lifetime of a freestanding GaN film using one-photon and two-photon excitations to demonstrate the dramatic difference in exciton recombination dynamics at the surface and in the bulk. An ultralong exciton PL lifetime of 17.2 ns at 295 K is observed from a GaN freestanding film using two-photon excitation, whereas less than 100 ps lifetime is observed for one-photon excitation, suggesting that nonradiative processes from surface defects account for the short PL lifetime measured. A monotonic increase in two-photon excited PL lifetime with increasing temperature and the linear dependence of the exciton lifetime with emission wavelength show good agreement with the theoretical predictions, indicating that radiative recombination dominates for bulk excited state relaxation processes.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
42.70.-a Optical materials
71.35.-y Excitons and related phenomena

Efficient 1.54 μm light emitting diode with nanometer thick polycrystalline Si anode and organic sandwich structure

W. Q. Zhao, G. Z. Ran, G. L. Ma, W. J. Xu, L. Dai, W. M. Liu, P. F. Wang, and G. G. Qin

Appl. Phys. Lett. 89, 022109 (2006); http://dx.doi.org/10.1063/1.2220483 (3 pages) | Cited 2 times

Online Publication Date: 11 July 2006

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This letter reports that the 1.54 μm electroluminescence efficiency of the organic light emitting diode (OLED) with a structure of nanometer thick polycrystalline silicon (NTPS)/NPB/ErQ/AlQ/Al is two orders of magnitude higher than that of the OLED with a structure of thick crystalline silicon/NPB/ErQ/Al, which is similar to the OLED reported in literature [ Curry et al., Appl. Phys. Lett. 77, 2271 (2000) ]. Such an improvement is mainly attributed to the fact that hole injection is controlled by NTPS anode and holes are blocked by AlQ to match electron injection, and a higher light out coupling as well.
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85.60.Jb Light-emitting devices

Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

I. Volintiru, M. Creatore, W. H. van Helvoort, J. L. Linden, and M. C. M. van de Sanden

Appl. Phys. Lett. 89, 022110 (2006); http://dx.doi.org/10.1063/1.2221391 (3 pages) | Cited 6 times

Online Publication Date: 11 July 2006

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Nitrogen-containing zinc oxide films were deposited by the metal organic chemical vapor deposition technique from oxygen/diethylzinc mixtures injected in an argon/nitrogen expanding thermal plasma. Infrared spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as –CN and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
78.30.Fs III-V and II-VI semiconductors
64.75.-g Phase equilibria
61.72.Mm Grain and twin boundaries

Investigation of field emission properties of carbon nanotube arrays defined using nanoimprint lithography

Sara M. C. Vieira, Kenneth B. K. Teo, William I. Milne, Oliver Gröning, Laurent Gangloff, Eric Minoux, and Pierre Legagneux

Appl. Phys. Lett. 89, 022111 (2006); http://dx.doi.org/10.1063/1.2219124 (3 pages) | Cited 22 times

Online Publication Date: 12 July 2006

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We demonstrate the use of nanoimprint lithography as an alternative low-cost fabrication route for the production of ordered arrays of individual carbon nanotube field emitters. A high emission site density of 4×105 cm−2 was observed and is well within the specification of the cathode for a field emission display. The measured field enhancement values from the geometry of the nanotubes were in reasonable agreement with the values obtained through electrical measurements. We also show that the distribution of the field enhancement factor is Gaussian, indicative of the presence of well ordered arrays of carbon nanotube field emitters.
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85.35.Kt Nanotube devices
85.45.Db Field emitters and arrays, cold electron emitters
85.45.Fd Field emission displays (FEDs)
85.40.Hp Lithography, masks and pattern transfer

Nonvolatile memory cell effect in multilayered Ni1−xFex self-assembled nanoparticle arrays in polyimide

Jae Hun Jung, Jae Ho Kim, Tae Whan Kim, Chong Seung Yoon, Young-Ho Kim, and Sungho Jin

Appl. Phys. Lett. 89, 022112 (2006); http://dx.doi.org/10.1063/1.2220548 (3 pages) | Cited 21 times

Online Publication Date: 12 July 2006

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Transmission electron microscopy images showed that self-assembled Ni1−xFex nanoparticle arrays were periodically inserted in the polyimide (PI) layers. Capacitance-voltage (C-V) measurements on Al/PI/multiple-stacked Ni1−xFex nanoparticle arrays/PI/p-Si (100) structures at 300 K showed a metal-insulator-semiconductor capacitor behavior with different flatband voltage shifts, which depended on the value of the sweep voltage, due to the variations of the charged electron density in the multiple-stacked Ni1−xFex nanoparticle arrays. Conductance-voltage (G-V) measurements showed that the conductance peak related to the interface trap disappeared, and that the positions of the C-V and the G-V hystereses at the sweep voltage were different.
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73.63.Bd Nanocrystalline materials
84.30.Sk Pulse and digital circuits
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
68.37.Lp Transmission electron microscopy (TEM)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

Semiconducting phase of amorphous carbon-nickel composite films

Somnath Bhattacharyya, S. J. Henley, D. Lock, N. P. Blanchard, and S. R. P. Silva

Appl. Phys. Lett. 89, 022113 (2006); http://dx.doi.org/10.1063/1.2216030 (3 pages) | Cited 8 times

Online Publication Date: 12 July 2006

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Amorphous carbon-nickel composite films, which constitute a homogeneously mixed phase of carbon and 10% nickel, are prepared by UV pulsed laser ablation. From the low temperature conductivity study of these films, a nearly activated conduction followed by conductivity saturation below a temperature of 25 K has been identified. This is very different from undoped diamond-like carbon (DLC) films. The presence of additional density of states at the Fermi level observed in these samples when compared with DLC films, is directly confirmed using valence band spectroscopy.
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73.61.Jc Amorphous semiconductors; glasses
71.23.Cq Amorphous semiconductors, metallic glasses, glasses

Investigation of multilayer electronic vertically coupled InAs/GaAs quantum dot structures using surface photovoltage spectroscopy

C. H. Chan, H. S. Chen, C. W. Kao, H. P. Hsu, Y. S. Huang, and J. S. Wang

Appl. Phys. Lett. 89, 022114 (2006); http://dx.doi.org/10.1063/1.2221402 (3 pages) | Cited 9 times

Online Publication Date: 12 July 2006

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Using room-temperature surface photovoltage spectroscopy, we have characterized several 30-layer stacked self-assembled InAs/GaAs quantum dot (QD) structures with different spacer layer (SL) thicknesses. Signals from every relevant portion of the samples, including QDs, wetting layer, and GaAs barrier have been observed. The strain-induced field for thinner SL is responsible for a significant modification of the band structure, possibly resulting in the appearance of an additional excited state lying higher than the second excited QD state. A peculiar feature below the fundamental transition is tentatively attributed to the optical absorption from uncoupled dots of which the density is significantly lower than that of vertically coupled ones. The spectra show blueshifted features with a decrease of the SL thickness, indicating that the materials intermixing between InAs QDs and GaAs SL are strongly driven by strain.
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81.07.Ta Quantum dots
73.63.Kv Quantum dots
78.67.Hc Quantum dots
73.21.La Quantum dots
73.50.Pz Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena

Electrical transport through individual nanowires with transverse grain boundaries

X. Y. Xue, P. Feng, C. Wang, Y. J. Chen, Y. G. Wang, and T. H. Wang

Appl. Phys. Lett. 89, 022115 (2006); http://dx.doi.org/10.1063/1.2221408 (3 pages) | Cited 3 times

Online Publication Date: 12 July 2006

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V2O4∙0.25H2O nanowires are synthesized via hydrothermal route. The nanowires are of metastable phase, and transverse grain boundaries are observed in their microstructures. Transport through individual V2O4∙0.25H2O nanowires shows nonlinear current-voltage (I-V) characteristics in the bias range of −3 to 3 V. The resistance rapidly decreases from 2.54 to 0.5 MΩ as the bias is raised from 0 to 1 V. Such behaviors can be attributed to the presence of the barrier at the transverse grain boundary. By analyzing the I-V curves at various temperatures, the effective barrier height is estimated to be about 0.13 eV. Our results provide important information about how the microstructure mismatch affects the electrical properties.
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81.07.Vb Quantum wires
81.16.-c Methods of micro- and nanofabrication and processing
73.63.Nm Quantum wires
61.72.Mm Grain and twin boundaries
61.46.-w Structure of nanoscale materials
68.65.La Quantum wires (patterned in quantum wells)

Magnetoresistance in silicon-based semiconductor-metal hybrid structures

A. S. Troup, D. G. Hasko, J. Wunderlich, and D. A. Williams

Appl. Phys. Lett. 89, 022116 (2006); http://dx.doi.org/10.1063/1.2221409 (3 pages) | Cited 2 times

Online Publication Date: 12 July 2006

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Recent experimental and theoretical studies have shown that nonmagnetic semiconductor-metal hybrid (SMH) structures can exhibit a very large geometrical magnetoresistance response. We report the realization of silicon-based SMH structures where the metal is replaced by metallic silicide, and we identify key process and material requirements. The devices exhibit larger magnetoresistance responses than homogeneous silicon systems, and a finite element model correctly predicts these responses. In particular, it is experimentally verified that the response is further increased by alternating the current leads/voltage probes. Such scalable systems may be used to study the geometrical magnetoresistance in generic SMH structures as carrier transport moves from the diffusive to the ballistic regime.
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73.40.Ns Metal-nonmetal contacts
72.20.My Galvanomagnetic and other magnetotransport effects
73.40.Cg Contact resistance, contact potential
73.23.Ad Ballistic transport

Effect of three-dimensional current and temperature distributions on void formation and propagation in flip-chip solder joints during electromigration

S. W. Liang, Y. W. Chang, T. L. Shao, Chih Chen, and K. N. Tu

Appl. Phys. Lett. 89, 022117 (2006); http://dx.doi.org/10.1063/1.2220550 (3 pages) | Cited 14 times

Online Publication Date: 13 July 2006

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Effect of three-dimensional current distribution on void formation in flip-chip solder joints during electromigration was investigated using thermoelectrical coupled modeling, in which the current and temperature redistributions were coupled and simulated at different stages of void growth. Simulation results show that a thin underbump metallization of low resistance in the periphery of the solder joint can serve as a conducting path, leading to void propagation in the periphery of the low current density region. In addition, the temperature of the solder did not rise significantly until 95% of the contact opening was eclipsed by the propagating void.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration

Impedance of nanometer sized silicon structures

G. Conte, M. C. Feliciangeli, and M. C. Rossi

Appl. Phys. Lett. 89, 022118 (2006); http://dx.doi.org/10.1063/1.2221397 (3 pages) | Cited 1 time

Online Publication Date: 13 July 2006

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Laser treatment of amorphous silicon oxide films resulted in the formation of nanocrystalline silicon grains connected along the laser treated trace. The ac response has been analyzed at different temperatures in a wide frequency range. The real admittance probed along the laser trace showed decreasing values after an initial constant conductance when the frequency is increased; this trend is reminiscent of an inductive behavior. Therefore, the whole impedance figure addressed the probed material as a Debye-like single time constant homogeneous system with the full width at half maximum corresponding to the expected 1.14 decades with evidence of resistive losses only.
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73.63.Bd Nanocrystalline materials
81.05.Cy Elemental semiconductors

Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

A. Klaver, V. Nádaždy, M. Zeman, and R. A. C. M. M. van Swaaij

Appl. Phys. Lett. 89, 022119 (2006); http://dx.doi.org/10.1063/1.2221876 (3 pages) | Cited 1 time

Online Publication Date: 14 July 2006

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We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar trend is observed for a-Si:H which has been subjected to light soaking, but in that case the majority of defect states are created around midgap, whereas with electron-beam degradation more defect states are created near the valence-band tail.
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71.55.Cn Elemental semiconductors
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
61.80.Fe Electron and positron radiation effects

Structural, optical, and magnetic properties of As-doped (Zn0.93Mn0.07)O thin films

Sejoon Lee, Deuk Young Kim, Yoon Shon, and Chong S. Yoon

Appl. Phys. Lett. 89, 022120 (2006); http://dx.doi.org/10.1063/1.2221901 (3 pages) | Cited 14 times

Online Publication Date: 14 July 2006

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The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A0,X) having acceptor binding energy of 181 meV. The sample showed high TC ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be 0.13μB/Mn. The improved ferromagnetism is expected to be originated from hole-induced ferromagnetism and enhanced magnetic anisotropy because crystallographically improved sample showed p-type conductivity with hole concentration of 4.8×1018 cm−3 and hole mobility of 11.8 cm2 V−1 s−1. These results suggest that high TC ferromagnetism can be realized by codoping the acceptor dopant and improving the magnetic anisotropy.
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75.50.Pp Magnetic semiconductors
68.55.-a Thin film structure and morphology
78.66.Hf II-VI semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
78.55.Et II-VI semiconductors
73.61.Ga II-VI semiconductors
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